1. High-temperature atomic layer deposition of silicon oxide films using Tris(dimethylamino)silane and ozone.
- Author
-
Kim, Okhyeon, Choi, Yoonho, Kim, Changgyu, Kim, Hye-Lee, and Lee, Won-Jun
- Subjects
- *
SECONDARY ion mass spectrometry , *ATOMIC layer deposition , *SILICON oxide films , *SILICON oxide , *STRAY currents - Abstract
Atomic layer deposition (ALD) benefits from high process temperatures when the substrate is not temperature-sensitive because the films deposited at higher temperatures exhibit better electrical properties. In this study, we investigated the ALD process of silicon oxide films by alternating injections of tris(dimethylamino)silane (tris-DMAS) and O 3 /O 2 at temperatures ranging from 400 to 700 °C. The saturation dose of tris-DMAS was 1.5 × 106 L at 400 °C. Self-limiting growth with a growth rate of approximately 0.9 Å/cycle was observed up to 600 °C, allowing excellent step coverage. However, at 700 °C, the growth rate increased significantly to 4.6 Å/cycle, carbon and nitrogen impurities were detected by secondary ion mass spectrometry, and step coverage was poor, supporting the thermal decomposition of tris-DMAS at this temperature. Therefore, the optimum temperature for ALD SiO 2 using tris-DMAS is 600 °C for application as an insulating film on high aspect ratio patterns. At this temperature, the leakage current density was 0.58 nA/cm2, and the oxide-trapped charge density was 4.0 × 1010 cm−2. [ABSTRACT FROM AUTHOR]
- Published
- 2024
- Full Text
- View/download PDF