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Magnons, bosonic quasiparticles carrying angular momentum, can flow through insulators for information transmission with minimal power dissipation. However, it remains challenging to develop a magnon-based logic due to the lack of efficient electrical manipulation of magnon transport. Here we show the electric excitation and control of multiferroic magnon modes in a spin-source/multiferroic/ferromagnet structure. We demonstrate that the ferroelectric polarization can electrically modulate the magnon-mediated spin-orbit torque by controlling the non-collinear antiferromagnetic structure in multiferroic bismuth ferrite thin films with coupled antiferromagnetic and ferroelectric orders. In this multiferroic magnon torque device, magnon information is encoded to ferromagnetic bits by the magnon-mediated spin torque. By manipulating the two coupled non-volatile state variables-ferroelectric polarization and magnetization-we further present reconfigurable logic operations in a single device. Our findings highlight the potential of multiferroics for controlling magnon information transport and offer a pathway towards room-temperature voltage-controlled, low-power, scalable magnonics for in-memory computing., (© 2024. The Author(s).)

This paper investigates the relationship among interlayer exchange coupling (IEC), Dzyaloshinskii-Moriya interaction (DMI), and multilevel magnetization switching within a Co/Pt/Co heterostructure, where varying Pt thicknesses enable control over the coupling strength. Employing Brillouin Light Scattering to quantify the effective DMI, we explore its potential role in magnetization dynamics and multilevel magnetization switching. Experimental findings show four distinct resistance states under an external magnetic field and spin Hall effect related spin current. We explain this phenomenon based on the asymmetry between Pt/Co and Co/Pt interfaces and the interlayer coupling, which, in turn, influences the DMI and subsequently impacts the magnetization dynamics. Numerical simulations, including macrospin, 1D domain wall, and simple spin wave models, further support the experimental observations of multilevel switching and help uncover the underlying mechanisms. Our proposed explanation, supported by magnetic domain observation using polar-magnetooptical Kerr microscopy, offers insights into both the spatial distribution of magnetization and its dynamics for different IECs, thereby shedding light on its interplay with DMI, which may lead to potential applications in storage devices., (© 2024. The Author(s).)

Magnetic tunnel junctions (MTJ) have been successfully applied in various sensing application and digital information storage technologies. Currently, a number of new potential applications of MTJs are being actively studied, including high-frequency electronics, energy harvesting or random number generators. Recently, MTJs have been also proposed in designs of new platforms for unconventional or bio-inspired computing. In the current work, we present a complete hardware implementation design of a neural computing device that incorporates serially connected MTJs forming a multi-state memory cell can be used in a hardware implementation of a neural computing device. The main purpose of the multi-cell is the formation of quantized weights in the network, which can be programmed using the proposed electronic circuit. Multi-cells are connected to a CMOS-based summing amplifier and a sigmoid function generator, forming an artificial neuron. The operation of the designed network is tested using a recognition of hand-written digits in 20 [Formula: see text] 20 pixels matrix and shows detection ratio comparable to the software algorithm, using weights stored in a multi-cell consisting of four MTJs or more. Moreover, the presented solution has better energy efficiency in terms of energy consumed per single image processing, as compared to a similar design., (© 2022. The Author(s).)

We present experimental data and their theoretical description on spin Hall magnetoresistance (SMR) in bilayers consisting of a heavy metal (H) coupled to in-plane magnetized ferromagnetic metal (F), and determine contributions to the magnetoresistance due to SMR and anisotropic magnetoresistance (AMR) in five different bilayer systems: [Formula: see text], [Formula: see text], [Formula: see text], W/Co, and Co/Pt. The devices used for experiments have different interfacial properties due to either amorphous or crystalline structures of constitutent layers. To determine magnetoresistance contributions and to allow for optimization, the AMR is explicitly included in the diffusion transport equations in the ferromagnets. The results allow determination of different contributions to the magnetoresistance, which can play an important role in optimizing prospective magnetic stray field sensors. They also may be useful in the determination of spin transport properties of metallic magnetic heterostructures in other experiments based on magnetoresistance measurements.

Modulation of a microwave signal generated by the spin-torque oscillator (STO) based on a magnetic tunnel junction (MTJ) with perpendicularly magnetized free layer is investigated. Magnetic field inductive loop was created during MTJ fabrication process, which enables microwave field application during STO operation. The frequency modulation by the microwave magnetic field of up to 3 GHz is explored, showing a potential for application in high-data-rate communication technologies. Moreover, an inductive loop is used for self-synchronization of the STO signal, which after field-locking, exhibits significant improvement of the linewidth and oscillation power.

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Perpendicular magnetic tunnel junctions (MTJ) with a bottom pinned reference layer and a composite free layer (FL) are investigated. Different thicknesses of the FL were tested to obtain an optimal balance between tunneling magnetoresistance (TMR) ratio and perpendicular magnetic anisotropy. After annealing at 400 °C, the TMR ratio for 1.5 nm thick CoFeB sublayer reached 180% at room temperature and 280% at 20 K with an MgO tunnel barrier thickness corresponding to the resistance area product RA = 10 Ohmμm 2 . The voltage vs. magnetic field stability diagrams measured in pillar-shaped MTJs with 130 nm diameter indicate the competition between spin transfer torque (STT), voltage controlled magnetic anisotropy (VCMA) and temperature effects in the switching process. An extended stability phase diagram model that takes into account all three effects and the effective damping measured independently using broadband ferromagnetic resonance technique enabled the determination of both STT and VCMA coefficients that are responsible for the FL magnetization switching.

When a current is passed through a non-magnetic metal with strong spin-orbit coupling, an orthogonal spin current is generated. This spin current can be used to switch the magnetization of an adjacent ferromagnetic layer or drive its magnetization into continuous precession. The interface, which is not necessarily sharp, and the crystallographic structure of the nonmagnetic metal can both affect the strength of current-induced spin-orbit torques. Here, we investigate the effects of interface intermixing and film microstructure on spin-orbit torques in perpendicularly magnetized Ta/Co 40 Fe 40 B 20 /MgO trilayers with different Ta layer thickness (5 nm, 10 nm, 15 nm), greater than the spin diffusion length. Effective spin-orbit torques are determined from harmonic Hall voltage measurements performed at temperatures ranging from 20 K to 300 K. We account for the temperature dependence of damping-like and field-like torques by including an additional contribution from the Ta/CoFeB interface in the spin diffusion model. Using this approach, the temperature variations of the spin Hall angle in the Ta underlayer and at the Ta/CoFeB interface are determined separately. Our results indicate an almost temperature-independent spin Hall angle of [Formula: see text] in Ta and a strongly temperature-dependent [Formula: see text] for the intermixed Ta/CoFeB interface.

Goalball is a Paralympic sport exclusively for athletes who are visually impaired and blind. The aims of this study were twofold: to describe game performance of elite male goalball players based upon the degree of visual impairment, and to determine if game performance was related to anthropometric characteristics of elite male goalball players. The study sample consisted of 44 male goalball athletes. A total of 38 games were recorded during the Summer Paralympic Games in London 2012. Observations were reported using the Game Efficiency Sheet for Goalball. Additional anthropometric measurements included body mass (kg), body height (cm), the arm span (cm) and length of the body in the defensive position (cm). The results differentiating both groups showed that the players with total blindness obtained higher means than the players with visual impairment for game indicators such as the sum of defense (p = 0.03) and the sum of good defense (p = 0.04). The players with visual impairment obtained higher results than those with total blindness for attack efficiency (p = 0.04), the sum of penalty defenses (p = 0.01), and fouls (p = 0.01). The study showed that athletes with blindness demonstrated higher game performance in defence. However, athletes with visual impairment presented higher efficiency in offensive actions. The analyses confirmed that body mass, body height, the arm span and length of the body in the defensive position did not differentiate players' performance at the elite level.

Loss of heterozygosity (LOH) co-deletion 1p/19q, MGMT promoter methylation and/or IDH1 mutation generally signify a better prognosis for patients with glioma. However, the influence of 1p/19q co-deletion and the LOH on other chromosomes in primary glioblastoma on survival is still debatable. The aim of our study was to identify LOH on chromosomes 1p, 19q, 9p, 10q, 13q, and 17p, and evaluate their impact either alone or 1p/19q co-deletion or by groups of LOH on the overall survival of 42 primary glioblastoma patients without an oligodendroglial component. These patients were additionally molecularly characterized for EGFR amplification, IDH1 mutations and TP53 mutations. We assessed their influence on the overall survival of glioblastoma patients. LOH in at least one of the loci on all examined chromosomes was detected in 65% of cases and was significantly associated with shorter overall survival (hazard ratio 3.07; 95% CI: 1.29-7.31, p = 0.006). 1p/19q co-deletion was infrequent (7.14%) and had no impact on overall survival. Our results indicate that in primary glioblastoma a specific LOH group analysis may be important for the prognosis. LOH 1p/19q co-deletion is rare in glioblastoma without an oligodendroglial component and has no impact on patient survival.