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Research shows that gate leakage current in a 0.35 micrometer WSi gate i-AlGaAs/n - GaAs doped channel heterostructure insulated-gate field-effect transistor rises in response to a -6V gate-to-drain voltage application. A substrate current and negative temperature coefficient were observed at impact ionization. Researchers have succeeded in developing a degradation model which can improve gate-edge electric field.

Studies of i-Al(0.3)Ga(0.7)As/n-GaAs doped-channel heterostructure insulated gate FET with 0.3 mu m gatelength reveal that the gate forward turn-on voltage temperature coefficient varies with the i-AlGaAs layer thickness. The minimum thickness is -0.8 to -0.9 mV/degree at a thickness of 10nm. At this thickness, the temperature coefficient value becomes 20% smaller than that of GaAs MESFET.