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1. Characterization of boron-coated silicon sensors for thermal neutron detection

Author

Ganesh Jagannath Tambave, Angela Kok, Marco Povoli, Dieter Røhrich, Thomas Kittelmann, Richard Hall-Wilton, Carina Höglund, Tomas Slavicek, Chung-Chuan Lai, Andreas Tefre Samnøy, Thor-Erik Hansen, Kalliopi Kanaki, Stanislav Pospisil, Isabel Llamas-Jansa, Shruti Vineet Mehendale, S. Schmidt, and Saima Sultana Kazi

Subjects
010302 applied physics, Physics, Nuclear and High Energy Physics, Fabrication, Silicon, 010308 nuclear & particles physics, business.industry, Detector, chemistry.chemical_element, Boron carbide, 01 natural sciences, Semiconductor detector, chemistry.chemical_compound, chemistry, 0103 physical sciences, Neutron detection, Optoelectronics, business, Boron, Instrumentation, Diode
Abstract

Silicon neutron detectors can operate at low voltage and come with ease of fabrication and the possibility of integration of readout electronics and thus are attractive from an application point of view. In this paper, we have studied thermal neutron capture by silicon diodes coated with boron carbide (B4C). One of the surfaces of the diodes was covered with either natural B4C ( n a t B4C) or with enriched B4C ( e n B4C). We have investigated: (a) the effect of increase in the sensitive area of the surface of the diode covered with B4C on the neutron detection efficiency and (b) the effect of enrichment of 10B in B4C. The difference in 10B in n a t B4C (16 at. % in the deposited film) and e n B4C ( 79 at. % in the deposited film) leads to about three times increase in detection efficiency of the same detector. For the given experimental conditions, we do not observe a direct relationship between increase in the surface area and the detection efficiency. Energy spectra obtained by Geant4 simulations support the experimental observation of finding no direct relation between increase in the surface area and the detection efficiency.

Published
2020
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2. 3D active edge silicon sensors: Device processing, yield and QA for the ATLAS-IBL production

Author

A. Micelli, Celeste Fleta, Stephen Watts, Angela Kok, Christopher J. Kenney, Claudia Gemme, M. Povoli, Sherwood Parker, Gian-Franco Dalla Betta, Gabriele Giacomini, Cinzia Da Via, David-leon Pohl, Maurizio Boscardil, Alessandro La Rosa, Jasmine Hasi, Philippe Grenier, Giovanni Darbo, Giulio Pellegrini, Nicola Zorzi, Elisa Vianello, Sebastian Grinstein, and Thor-Erik Hansen

Subjects
Physics, Nuclear and High Energy Physics, Pixel, 010308 nuclear & particles physics, business.industry, ATLAS experiment, Process (computing), Substrate (printing), 01 natural sciences, Surface micromachining, Planar, 0103 physical sciences, 010306 general physics, business, Instrumentation, Quality assurance, Radiation hardening, Computer hardware
Abstract

3D silicon sensors, where plasma micromachining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, were successfully manufactured in facilities in Europe and USA. In 2011 the technology underwent a qualification process to establish its maturity for a medium scale production for the construction of a pixel layer for vertex detection, the Insertable B-Layer (IBL) at the CERN-LHC ATLAS experiment. The IBL collaboration, following that recommendation from the review panel, decided to complete the production of planar and 3D sensors and endorsed the proposal to build enough modules for a mixed IBL sensor scenario where 25% of 3D modules populate the forward and backward part of each stave. The production of planar sensors will also allow coverage of 100% of the IBL, in case that option was required. This paper will describe the processing strategy which allowed successful 3D sensor production, some of the Quality Assurance (QA) tests performed during the pre-production phase and the production yield to date.

Published
2013
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3. Beam tests of silicon pixel 3D-sensors developed at SINTEF

Author

Andreas Heggelund, M. Bomben, Thor-Erik Hansen, Heidi Sandaker, Jens Weingarten, Ole Myren Røhne, Bjarne Stugu, Zongchang Yang, Angela Kok, O. Dorholt, N. Pacifico, André Rummler, Laboratoire de Physique Nucléaire et de Hautes Énergies (LPNHE (UMR_7585)), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris Diderot - Paris 7 (UPD7)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Annecy de Physique des Particules (LAPP/Laboratoire d'Annecy-le-Vieux de Physique des Particules), Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3), Laboratoire d'Annecy de Physique des Particules (LAPP), and Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)

Subjects
Physics - Instrumentation and Detectors, Materials science, dimension: 3, Silicon, Physics::Instrumentation and Detectors, FOS: Physical sciences, chemistry.chemical_element, 3D silicon pixel sensors, Radiation, 01 natural sciences, pi: irradiation, semiconductor detector: pixel, Optics, Particle tracking detectors, 0103 physical sciences, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], Detectors and Experimental Techniques, 010306 general physics, physics.ins-det, Instrumentation, Mathematical Physics, radiation: damage, Luminosity (scattering theory), Large Hadron Collider, Pixel, 010308 nuclear & particles physics, business.industry, HL-LHC upgrade, Detector, Instrumentation and Detectors (physics.ins-det), chemistry, efficiency, business, performance, Beam (structure), semiconductor detector: design, Voltage
Abstract

For the purpose of withstanding very high radiation doses, silicon pixel sensors with a `3D' electrode geometry are being developed. Detectors of this kind are highly interesting for harch radiation environments such as expected in the High Luminosity LHC, but also for space physics and medical applications. In this paper, prototype sensors developed at SINTEF are presented and results from tests in a pion beam at CERN are given. These tests show that these 3D sensors perform as expected with full efficiency at bias voltages between 5 and 15V. For the purpose of withstanding very high radiation doses, silicon pixel sensors with a 3D electrode geometry are being developed. Detectors of this kind are highly interesting for harch radiation environments such as expected in the High Luminosity LHC, but also for space physics and medical applications. In this paper, prototype sensors developed at SINTEF are presented and results from tests in a pion beam at CERN are given. These tests shows that these 3D sensors perform as expected with full efficiency at bias voltages between 5 and 15V.

Published
2018
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4. 3D-FBK pixel sensors:Recent beam tests results with irradiated devices

Author

C. Butter, Stephen Watts, Andrea Cristofoli, Jasmine Hasi, Karl Jakobs, Markus Konrad Köhler, Marcella Capua, Juha Kalliopuska, Pierpaolo Palestri, M. L. Kocian, Sebastian Grinstein, P. Hansson, Steinar Stapnes, J. Freestone, A. Micelli, C. J. S. Young, C. H. Lai, Anna Mastroberardino, Hans Krüger, Sherwood Parker, Shaun Roe, MarioPaolo Giordani, Paolo Gabos, E. Bolle, Daniel Dobos, A. Rovani, Fabian Hügging, Thor Erik Hansen, C. Pradilla, Robert Thompson, C.J. Kenney, K. N. Sjoebaek, Thor-Erik Hansen, Giovanni Darbo, Marina Cobal, Luca Selmi, Giulio Pellegrini, H. Davetak, Claudio Piemonte, Maurizio Boscardin, S. Fazio, Joleen Pater, Vadim Kostyukhin, Claudia Gemme, Manuel Lozano, Matteo Cavalli-Sforza, Martin Hoeferkamp, S. D. Kolya, Maurice Garcia-Sciveres, Clara Nellist, C. Da Via, Richard Bates, Ole Røhne, K. Helle, Paul Jackson, Jieh-Wen Tsung, Val O'Shea, P. Grenier, G. Gariano, Norbert Wermes, C. Fleta, M. Borri, Nicola Zorzi, C. Gallrapp, A. La Rosa, Stanislav Pospisil, B. Stugu, Giancarlo Susinno, Sally Seidel, B. DeWilde, Dong Su, H. Gjersdal, David Esseni, Tomas Slavicek, Heidi Sandaker, Marco Barbero, Kevin Einsweiler, D. Silverstein, E. Ruscino, M. Povoli, Sabina Ronchin, G.-F. Dalla Betta, Alvise Bagolini, Aarne Oja, U. Parzefall, B. Di Girolamo, M. Karagounis, Nicolas Lietaer, Angela Kok, Dmitri Tsybychev, Heinz Pernegger, and I. Korokolov

Subjects
Physics, Nuclear and High Energy Physics, Large Hadron Collider, 3D sensors, ATLAS upgrade, HL-LHC, Radiation detectors, Silicon sensors, Pixel, Silicon, business.industry, ATLAS experiment, chemistry.chemical_element, Substrate (electronics), Particle detector, law.invention, chemistry, law, Optoelectronics, Wafer, Detectors and Experimental Techniques, business, Collider, Instrumentation
Abstract

The Pixel Detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider, and plays a key role in the reconstruction of the primary vertices from the collisions and secondary vertices produced by short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology is an innovative combination of very-large-scale integration and Micro-Electro-Mechanical-Systems where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradiated 3D devices produced at FBK (Trento, Italy). The performance of these devices, all bump-bonded with the ATLAS pixel FE-I3 read-out chip, is compared to that observed before irradiation in a previous beam test.

Published
2011
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5. 3D Radiation Detectors: Charge Collection Characterisation and Applicability of Technology for Microdosimetry

Author

Michael L. F Lerch, Thor-Erik Hansen, Anand Summanwar, Angela Kok, Marco Petasecca, Mark I. Reinhard, Cinzia Da Via, Linh T. Tran, Dale A. Prokopovich, and Anatoly B. Rosenfeld

Subjects
Nuclear and High Energy Physics, medicine.medical_specialty, Materials science, Ion beam, Silicon, Physics::Instrumentation and Detectors, business.industry, Detector, chemistry.chemical_element, Silicon on insulator, Radiation, Electrostatic induction, Particle detector, Nuclear Energy and Engineering, chemistry, medicine, Optoelectronics, Medical physics, Neutron, Electrical and Electronic Engineering, business
Abstract

A study of charge collection in SINTEF 3D active edge silicon detectors was carried out at ANSTO using Ion Beam Induced Charge (IBIC) technique. An IBIC study has shown that several different geometries of 3D detectors have full depletion under low applied bias. The effect of fast neutron and gamma radiation on their charge collection efficiency was also investigated. A 3D active edge silicon detector technology has demonstrated extremely promising performance for application of the 3D Sensitive Volumes (SVs) fabrication methods to SOI microdosimetry.

Published
2014

6. Fast Beam Profile Monitors for Microbeam Radiation Therapy

Author

M. Petasecca, Marco Povoli, Heidi Sandaker, Iwan Cornelius, D. Roehrich, John Morse, Anatoly B. Rosenfeld, Pauline Fournier, Elke Bräuer-Krisch, Murielle Salomé, Alberto Bravin, Herwig Requardt, E. Alagoz, Thor-Erik Hansen, N. Pacifico, M.L.F. Lerch, Bjarne Stugu, Edouard Monakhov, and A. Kok

Subjects
Materials science, business.industry, Hematology, 030218 nuclear medicine & medical imaging, 03 medical and health sciences, 0302 clinical medicine, Optics, Oncology, Microbeam radiation therapy, Radiology Nuclear Medicine and imaging, 030220 oncology & carcinogenesis, Radiology, Nuclear Medicine and imaging, business, Beam (structure)
Published
2016
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7. Prototype ATLAS IBL modules using the FE-I4A front-end readout chip

Author

Camille Fausten, Mathieu Benoit, E. Devetak, Alexandre Rozanov, Didier Ferrere, Alessandro La Rosa, Sourabh Dube, Andreas Salzburger, Ilya Tsurin, Karl Walter Glitza, Paolo Morettini, Maurizio Boscardin, G.-F.D. Betta, Stephan von Kleist, Jens Weingarten, Konstantin Toms, D. Su, Tobias Flick, Daniel Muenstermann, Heinz Pernegger, P. K. Teng, A. Micelli, Oswin Ehrmann, Frank Jensen, N. Schroer, Dean Forshaw, Sally Seidel, Maurice Garcia-Sciveres, Ingrid-Maria Gregor, Denis Marchand, Ali Harb, Michal Sloboda, Daniel Dobos, T. Todorov, M. Strang, Manuel Lozano, Yoichi Ikegami, Christopher J. Kenney, Mauro Citterio, T. Fritzsch, U. Mallik, Dario Gnani, Thibaut Rambure, Jiří Popule, Andrej Gorišek, Georg Troska, Hermann Oppermann, Marlon Barbero, S. Mitsui, Martin Hetmánek, Antonio Ereditato, Kerstin Lantzsch, N. Krieger, David Arutinov, Matthew Scott Rudolph, Reiner Klingenberg, Kate Doonan, C. Gallrapp, Els Koffeman, N. Bousson, Abraham Seiden, B. DeWilde, Nicola Zorzi, Jim Bensinger, Henry Lubatti, Chiara Meroni, Giovanni Darbo, Shota Tsiskaridze, Gianluca Alimonti, I. Rubinskiy, Andrey Dushkin, Stephen Watts, Jean-Yves Hostachy, Luc Jansen, V. Gromov, Marko Mikuž, Matteo Cavalli-Sforza, Gianluigi Casse, Edwin Spencer, Igor Mandić, Patrick Baudin, Clara Troncon, Lucian Ancu, Claus Gössling, V. Zivkovic, M. Povoli, David Elldge, O. Dorholt, Rui Wang, Christian Zeitnitz, Sergio Grancagnolo, Heidi Sandaker, Bart Verlaat, Giulio Pellegrini, Antonio Zoccoli, Marco Ciapetti, Malte Backhaus, Ole Røhne, Coralie Husi, Heather Gray, Jean-Francois Arguin, P. P. Allport, D.S. Smith, William Trischuk, Celeste Fleta, H. Gjersdal, Yannick Favre, Angela Kok, Elisa Vianello, Clara Nellist, I. V. Gorelov, Marc Weber, Susumu Terada, Beate Heinemann, Andreas Kugel, Sabine Elles, P. Kind, Alex Sood, Richard Nisius, S. Michal, Mohsine Menouni, Didier Laporte, Silke Altenheiner, O. Crespo-Lopez, Lukasz Zwalinski, Tomasz Hemperek, Ettore Ruscino, Jennifer Jentzsch, Dmitri Tsybychev, P. Weigell, Marteen Weber, MarioPaolo Giordani, Marcello Borri, Martin Kocian, Silvia Miglioranzi, M. Capeans, J. Albert, Manuel Neumann, Ilya Korolkov, Oleksandr Korchak, A. Wiese, Marina Cobal, Xavier Portell Bueso, Gabriele Giacomini, Peter Buchholz, Andreas Eyring, Richard Bates, Neal Hartman, G. Boyd, J. Moore, Markus Elsing, Fridolin Dittus, F. Gensolen, Auke-Pieter Colijn, Fares Djama, Patrick Ghislain, Attilio Andreazza, Philippe Schwemling, Claudia Gemme, G. Barbier, R. D. Kass, Pierre-Yves David, Susanne Kersten, Sebastian Grinstein, Marzio Nessi, Martin Hoeferkamp, Franziska Hegner, Graziano Bruni, Chung-Hang Lai, Daniel Dzahini, William F. Kuykendall, Hans Peter Beck, R. Kluit, Aboud Falou, J. Fleury, Jens Jansen, Nicola Giacinto Piacquadio, Davide Falchieri, Jan Godlewski, Danilo Giugni, Andre Kruth, Attilio Picazio, Vadim Kostyukhin, Gabriel Pelleriti, Harris Kagan, Xiao-Chao Fang, Vladimir Cindro, Markus Nordberg, Giuseppe Iacobucci, Stephen Gibson, Abderrazak Mekkaoui, Petr Sicho, Yoshinobu Unno, David Salek, Jacques Ballansat, Michal Tomášek, Alessandro Gabrielli, Daly Colin, N. Massol, Jean Tassan, Siegfried Wenig, Marco Bruschi, Peyton D. Murray, Matthias George, Vaclav Vrba, Ming-Lee Chu, Markus Alex, Javier Mesa, Simone Coelli, S. Debieux, P. Hansson, Norbert Wermes, A. L. S. Schorlemmer, David Quirion, Allan G Clark, Anna Macchiolo, Hans Krüger, Alessandro Polini, John Stupak, Yosuke Takubo, Riccardo Travaglini, Thor-Erik Hansen, T. Wittig, G. Calderini, Tobias Lapsien, Jan-David Schipper, Pierre Delebecque, Giuseppe Gariano, J. Idarraga, Arnulf Quadt, C. DaVia, Jens Dopke, B. Stugu, Nigel Hessey, Andre Rummler, Jose Antonio Botelho Direito, G. Marchiori, Franck Cadoux, Laura Gonella, Marco Oriunno, Steven David Welch, Leah Caminada, Beniamino Di Girolamo, Eric Vigeolas, Alessandro Rovani, Denis Diyakov, Jorn Grosse-Knetter, Philippe Grenier, Abdenour Lounis, Sherwood Parker, Ludovic Eraud, Basil Schneider, Marco Bomben, John Joseph, Tamer Yildizkaya, Johann Menu, P. Breugnon, K. K. Gan, D. Fougeron, Johann Collot, P. Skubic, Jasmine Hasi, N. Dinu, Craig Buttar, Renaud Gaglione, Zdenko Janoška, Branislav Ristic, Mario Rothermund, M. Karagounis, C. Padilla, Tristan Beau, Thibaut Gastaldi, Jacques Chauveau, Andrea Catinaccio, Michal Ziolkowski, D. Grondin, D. Nelson, Francois-Xavier Nuiry, Laurent Vacavant, Fabian Hügging, Wittgen Matthias, R. Beccherle, David Pohl, Timon Heim, Kirill Egorov, Erik Richards, Michele Battistin, Yunpeng Lu, Yuriy Pylypchenko, P. Mättig, Francesco Ragusa, Mauro Monti, Alvise Bagolini, D. Puldon, Raphael Vuillermet, Publica, Laboratoire de Physique Subatomique et de Cosmologie (LPSC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Centre National de la Recherche Scientifique (CNRS), Laboratoire de l'Accélérateur Linéaire (LAL), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Centre de Physique des Particules de Marseille (CPPM), Aix Marseille Université (AMU)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Annecy de Physique des Particules (LAPP), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), ATLAS, DIPARTIMENTO DI FISICA E ASTRONOMIA 'AUGUSTO RIGHI', Facolta' di INGEGNERIA, Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), and Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)

Subjects
Physics - Instrumentation and Detectors, Physics::Instrumentation and Detectors, ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION, FOS: Physical sciences, 7. Clean energy, 01 natural sciences, High Energy Physics - Experiment, Charge sharing, Nuclear physics, Front and back ends, High Energy Physics - Experiment (hep-ex), Planar, LARGE DETECTOR SYSTEMS FOR PARTICLE AND ASTROPARTICLE PHYSICS, 0103 physical sciences, [PHYS.HEXP]Physics [physics]/High Energy Physics - Experiment [hep-ex], [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], Detectors and Experimental Techniques, 010306 general physics, Nuclear Experiment, Precision Pixel Detectors [9.3], Instrumentation, Image resolution, Mathematical Physics, ComputingMethodologies_COMPUTERGRAPHICS, Advanced infrastructures for detector R&D [9], Physics, Large Hadron Collider, Pixel, 010308 nuclear & particles physics, business.industry, Detector, DESY, Instrumentation and Detectors (physics.ins-det), PARTICLE TRACKING DETECTORS (SOLID-STATE DETECTORS), Physics::Accelerator Physics, High Energy Physics::Experiment, PARTICLE TRACKING DETECTORS, business, Computer hardware
Abstract

The ATLAS Collaboration will upgrade its semiconductor pixel tracking detector with a new Insertable B-layer (IBL) between the existing pixel detector and the vacuum pipe of the Large Hadron Collider. The extreme operating conditions at this location have necessitated the development of new radiation hard pixel sensor technologies and a new front-end readout chip, called the FE-I4. Planar pixel sensors and 3D pixel sensors have been investigated to equip this new pixel layer, and prototype modules using the FE-I4A have been fabricated and characterized using 120 GeV pions at the CERN SPS and 4 GeV positrons at DESY, before and after module irradiation. Beam test results are presented, including charge collection efficiency, tracking efficiency and charge sharing., Comment: 45 pages, 30 figures, submitted to JINST

Published
2012
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8. Electrical Characterization and Preliminary Beam Test Results of 3D Silicon CMS Pixel Detectors

Author

Ian Shipsey, Nicolas Lietaer, A. Krzywda, Angela Kok, E. Alagoz, Gino Bolla, Geir Uri Jensen, Ryan Rivera, Trond Andreas Hansen, C. Da Via, Simon Kwan, O. Koybasi, Kirk Arndt, Thor-Erik Hansen, Lorenzo Uplegger, and Daniela Bortoletto

Subjects
Microelectromechanical systems, Physics, Nuclear and High Energy Physics, Bulk micromachining, Fabrication, business.industry, Detector, Surface micromachining, Nuclear Energy and Engineering, Nuclear electronics, Optoelectronics, Wafer, Electrical and Electronic Engineering, business, Radiation hardening
Abstract

The fabrication of 3D detectors which requires bulk micromachining of columnar electrodes has been realized with advancements in MEMS technology. Since the fabrication of the first 3D prototype in Stanford Nanofabrication Facility in 1997, a significant effort has been put forth to transfer the 3D detector technology to large scale manufacturing for future high luminosity collider experiments, in which the radiation hardness will be the primary concern, and other applications such as medical imaging and X-ray imaging for molecular biology. First, alternative 3D structures, single type column (STC) and double-side double type column (DDTC) 3D detectors, were produced at FBK-irst (Trento, Italy) and CNM-Barcelona (Spain), and assessed thoroughly to improve the production technology towards the standard full-3D detectors. The 3D collaboration has been extended to include SINTEF (Norway), which is committed to small to medium scale production of active edge full-3D silicon sensors. This paper focuses on p-type 3D detectors compatible with the CMS pixel front end electronics from the second run of fabrication at SINTEF clean room facilities. The sensors that passed the wafer level electrical characterization have been bump-bonded at IZM (Germany), assembled into modules and wire-bonded for functional characterization at Purdue University. We report the leakage current characteristics, bump-bond quality, threshold, noise, and gain measurement results of these 3D modules as well as the preliminary beam test data taken at Fermi National Accelerator Laboratory. © 2011 IEEE.

Published
2011

9. Fabrication of 3D Silicon Detectors

Author

Sherwood Parker, Angela Kok, Cinzia Da Via, Jasmine Hasi, Trond Andreas Hansen, Nicolas Lietaer, Christopher J. Kenney, Summanwar Anand, and Thor-Erik Hansen

Subjects
Fabrication, Materials science, Silicon, chemistry, business.industry, Hybrid silicon laser, Detector, Optoelectronics, chemistry.chemical_element, business, Semiconductor detector
Published
2011
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10. The SiRi particle-telescope system

Author

Nicolas Lietaer, Alexander Burger, Thor-Erik Hansen, and Magne Guttormsen

Subjects
Physics, Nuclear reaction, Nuclear and High Energy Physics, Silicon, business.industry, Physics::Instrumentation and Detectors, Strength function, Detector, chemistry.chemical_element, FOS: Physical sciences, Low leakage, law.invention, Telescope, Optics, chemistry, law, Nuclear Experiment (nucl-ex), business, Nuclear Experiment, Instrumentation, Voltage
Abstract

A silicon particle-telescope system for light-ion nuclear reactions is described. In particular, the system is designed to be optimized for level density and gamma-ray strength function measurements with the so-called Oslo method. Eight trapezoidal modules are mounted at 5 cm distance from the target, covering 8 forward angles between theta = 40 and 54 degrees. The thin front dE detectors (130 micrometer) are segmented into eight pads, determining the reaction angle for the outgoing charged ejectile. Guard rings on the thick back E detectors (1550 micrometer) guarantee low leakage current at high depletion voltage., Comment: 6 pages, 8 figures

Published
2011

11. Silicon detectors for the sLHC

Author

S. Charron, Lucian Pintilie, J. Miyamoto, Donato Creanza, Miguel Ullan, Ian Shipsey, Julien Mekki, S. Diez, Esa Tuovinen, V. Khivrich, C. Betancourt, Val O'Shea, V. K. Eremin, N. Samadashvili, M. Zavrtanik, C. Cristobal, P. Kaminski, Ettore Focardi, Michael Solar, Marcela Mikestikova, Yu. V. Tubol’tsev, Andrea Candelori, D. Bassignana, J. Zelazko, E. Cortina Gil, S. Korjenevski, Nicola Pacifico, Simon Kwan, Ralf P. Richter, N. Manna, Kati Lassila-Perini, J. Popule, Konstantin Toms, Maurizio Boscardin, D. Stolze, Suchandra Dutta, Anna Macchiolo, B. Sopko, Jaakko Härkönen, Francesco Fiori, Alexander Grillo, M. Miñano, M. H. Genest, A. Naletko, Teppo Mäenpää, Martin Hoeferkamp, Els Koffeman, A. Kharchuk, Fred Hartjes, M. Beimforde, A. A. Affolder, Leonid Makarenko, A. Zaluzhny, H. G. Moser, I. Wilhelm, Arūnas Kadys, M. Zen, Andrej Yu. Kuznetsov, A. Tsvetkov, A. Bates, C. Dragoi, Gianluigi Casse, Panja-Riina Luukka, Thor-Erik Hansen, M. Mikuž, G. Lefeuvre, M. Breindl, A. Borgia, M. Frey, S. Kühn, Roland Horisberger, Alexander Dierlamm, S. Son, A. Roy, V. Sopko, D. Forshaw, M. Walz, Regina Demina, R. Kozlowski, Monica Scaringella, Vladimir Cindro, Ionel Lazanu, Richard Bates, K. Giolo, Jacopo Bernardini, E. Monokhov, V. Kazukauskas, Eija Tuominen, G. Steinbrueck, Graeme Stewart, P. Buhmann, Th. Pöhlsen, Petr Sicho, P. Gregori, J. Storasta, M. Lozano, Leonard Spiegel, V. Radicci, Valery Zhukov, Vaclav Vrba, M.J. Bosma, S. Rogozhkin, R. Wunstorf, A. Groza, Carlos Lacasta, L. A.M. Wiik, Gregor Kramberger, Krzysztof Piotrzkowski, Tilman Rohe, M. Pawlowski, Adrian Driewer, J.A. Kierstead, Carsten Rott, Richard Nisius, S. Marunko, Roxana Radu, Riccardo Rando, J. Sibille, Sally Seidel, J.M. Raf, T. Barber, S. Cihangir, Laura Borrello, A. Litovchenko, Marco Battaglia, J.P. Balbuena, G. Lindström, Ladislav Andricek, T. J. V. Bowcock, A. K. Srivastava, R. Roeder, C. Parkes, M. Matysek, Z. Kohout, U. Parzefall, E. Grigoriev, I. Eremin, K. Kaska, W. De Boer, Ilya Korolkov, M. van Beuzekom, Daniel Dobos, Daniele Passeri, Gino Bolla, Joachim Erfle, A. Macraighne, Dario Bisello, Heinz Pernegger, E. M. Verbitskaya, J. Bohm, Sorina Lazanu, Sabina Ronchin, A. Barcz, Nicola Zorzi, D. Pantano, A. Karpenko, Ping Tan, M. De Palma, I. Vila Alvarez, A. Houdayer, H. Uebersee, Arie Ruzin, Mara Bruzzi, Tuure Tuuva, Stanislav Pospisil, Eugenijus Gaubas, Sebastian Grinstein, J. Vaitkus, C. Goessling, J. Guskov, N. Spencer, Sergey Kuleshov, Reiner Klingenberg, Alberto Messineo, C. Gallrapp, Doris Eckstein, S. Sakalauskas, Andre Rummler, Daniela Bortoletto, C. Lebel, Vincent Lemaitre, P.G. Litovchenko, Manuel Fahrer, R. Marco, F. Doherty, M. Tomášek, Joost Vossebeld, Michael Moll, Igor Mandić, U. Soldevila-Serrano, I. Dolenc Kittelmann, Claude Leroy, N. Fadeeva, P. Weigell, Frank Hartmann, L. Polivtsev, D. Zontar, B. Surma, Marco Petasecca, Z. Li, G. Grégoire, R. Placekett, A. Aleev, Otilia Militaru, N. Kazuchits, Lars Eklund, Tomas Slavicek, M. Kozubal, P. Masek, Maurice Glaser, Andrew Blue, Bengt Gunnar Svensson, R. Klanner, A. A. Golubev, Z. Luczynski, I. Ilyashenko, G. U. Pignatel, Eckhart Fretwurst, Carmen García, Jessica Metcalfe, C.A. Costinoaia, Keith Mathieson, Hartmut Sadrozinski, F. J. Munoz Sanchez, R. Roger, Craig Buttar, P. Collins, Dzmitry Maneuski, D. Hynds, A. La Rosa, Marina Artuso, D. Chren, J. S. Lange, G. F. Dalla Betta, L. Barabash, M. Tylchin, Claudio Piemonte, G. M. Bilei, C. Fleta, J. Broz, Francesca Campabadal, Abraham Seiden, A. Dolgolenko, Shota Tsiskaridze, J. Visser, M. Köhler, Phillip Allport, A. Brzozowski, Peter Kodys, Jens Preiss, Zdenek Dolezal, Bruce Schumm, Ioana Pintilie, Alexandra Junkes, Daniel Muenstermann, I. V. Gorelov, S. Marti i Garcia, V. Lastovetsky, R. Mori, Giulio Pellegrini, LHC (IHEF, IoP, FNWI), and UCL - SST/IRMP - Institut de recherche en mathématique et physique

Subjects
Nuclear and High Energy Physics, Silicon, Physics::Instrumentation and Detectors, LHC, High luminosity collider, radiation damage, Charge collection efficiency, chemistry.chemical_element, Tracking (particle physics), Nuclear physics, Radiation damage, Silicon particle detectors, Irradiation, Instrumentation, Radiation hardening, Physics, Luminosity (scattering theory), Large Hadron Collider, Detector, Semiconductor device, Engineering physics, chemistry, High Energy Physics::Experiment, Particle physics experiments
Abstract

In current particle physics experiments, silicon strip detectors are widely used as part of the inner tracking layers. A foreseeable large-scale application for such detectors consists of the luminosity upgrade of the Large Hadron Collider (LHC), the super-LHC or sLHC, where silicon detectors with extreme radiation hardness are required. The mission statement of the CERN RD50 Collaboration is the development of radiation-hard semiconductor devices for very high luminosity colliders. As a consequence, the aim of the RandD programme presented in this article is to develop silicon particle detectors able to operate at sLHC conditions. Research has progressed in different areas, such as defect characterisation, defect engineering and full detector systems. Recent results from these areas will be presented. This includes in particular an improved understanding of the macroscopic changes of the effective doping concentration based on identification of the individual microscopic defects, results from irradiation with a mix of different particle types as expected for the sLHC, and the observation of charge multiplication effects in heavily irradiated detectors at very high bias voltages. © 2011 Elsevier B.V.

Published
2011

12. Design, Simulation, Fabrication, and Preliminary Tests of 3D CMS Pixel Detectors for the Super-LHC

Author

Thor-Erik Hansen, Daniela Bortoletto, Geir Uri Jensen, Nicolas Lietaer, Trond Andreas Hansen, Gino Bolla, O. Koybasi, Simon Kwan, Anand Summanwar, and Angela Kok

Subjects
010302 applied physics, Physics, Nuclear and High Energy Physics, Fabrication, Large Hadron Collider, Pixel, Physics::Instrumentation and Detectors, 010308 nuclear & particles physics, business.industry, Detector, 01 natural sciences, Upgrade, Planar, Nuclear Energy and Engineering, 0103 physical sciences, Optoelectronics, Wafer, Electrical and Electronic Engineering, business, Radiation hardening
Abstract

The Super-LHC upgrade puts strong demands on the radiation hardness of the innermost tracking detectors of the CMS, which cannot be fulfilled with any conventional planar detector design. The so-called 3D detector architectures, which feature columnar electrodes passing through the substrate thickness, are under investigation as a potential solution for the closest operation points to the beams, where the radiation fluence is estimated to reach 10(16) n(eq)/Tcm(2). Two different 3D detector designs with CMS pixel readout electronics are being developed and evaluated for their advantages and drawbacks. The fabrication of full-3D active edge CMS pixel devices with p-type substrate has been successfully completed at SINTEF. In this paper, we study the expected post-irradiation behaviors of these devices with simulations and, after a brief description of their fabrication, we report the first leakage current measurement results as performed on wafer.

Published
2010

13. High aspect ratio deep RIE for novel 3D radiation sensors in high energy physics applications

Author

Geir Uri Jensen, Thor-Erik Hansen, Michal Marek Mielnik, Preben Storås, Angela Kok, Trond Andreas Hansen, and Nicolas Lietaer

Subjects
Materials science, Fabrication, Raidation tolerance, Silicon, business.industry, Deep reactive ion etching, chemistry.chemical_element, High aspect ratio, Nanotechnology, Substrate (electronics), 3D detectors, Aspect ratio (image), Particle detector, Semiconductor detector, chemistry, Etching (microfabrication), Hardware_INTEGRATEDCIRCUITS, Deep reactive-ion etching, Optoelectronics, business
Abstract

3D detectors with electrodes penetrating through the entire silicon substrate have many advantages over conventional planar silicon technology, for example, high radiation tolerance. High aspect ratio through-wafer holes are essential in such fabrication, and deep reactive ion etching (DRIE) is used. A series of DRIE processes were tested and optimised to achieve the required aspect ratio, and in 5-μm wide trenches, aspect ratios of 58:1 were achieved © 2009 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works

Published
2009

14. Thin silicon strip detectors for beam monitoring in Micro-beam Radiation Therapy

Author

Pauline Fournier, Anatoly B. Rosenfeld, Michael L. F Lerch, Angela Kok, Elke Bräuer-Krisch, Dieter Røhrich, Iwan Cornelius, Herwig Requardt, Edouard Monakhov, Marco Petasecca, Marco Povoli, A. Bravin, John Morse, Bjarne Stugu, E. Alagoz, Thor-Erik Hansen, Murielle Salomé, Heidi Sandaker, Povoli, M, Alagoz, E, Bravin, A, Cornelius, I, Braeuer-Krisch, E, Fournier, P, Hansen, T, Kok, A, Lerch, M, Monakhov, E, Morse, J, Petasecca, M, Requardt, H, Rosenfeld, A, Rohrich, D, Sandaker, H, Salome, M, and Stugu, B

Subjects
Physics - Instrumentation and Detectors, Materials science, beam monitoring, business.industry, silicon strip detector, Detector, Continuous monitoring, FOS: Physical sciences, FIS/07 - FISICA APPLICATA (A BENI CULTURALI, AMBIENTALI, BIOLOGIA E MEDICINA), Synchrotron radiation, Instrumentation and Detectors (physics.ins-det), Particle detector, Collimated light, 3. Good health, Semiconductor detector, Optics, Micro-beam Radiation Therapy, Shutter, business, Instrumentation, Mathematical Physics, Beam (structure)
Abstract

Microbeam Radiation Therapy (MRT) is an emerging cancer treatment that is currently being developed at the European Synchrotron Radiation Facility (ESRF) in Grenoble, France. This technique uses a highly collimated and fractionated X-ray beam array with extremely high dose rate and very small divergence, to benefit from the dose-volume effect, thus sparing healthy tissue. In case of any beam anomalies and system malfunctions, special safety measures must be installed, such as an emergency safety shutter that requires continuous monitoring of the beam intensity profile. Within the 3DMiMic project, a novel silicon strip detector that can tackle the special features of MRT, such as the extremely high spatial resolution and dose rate, has been developed to be part of the safety shutter system. The first prototypes have been successfully fabricated, and experiments aimed to demonstrate their suitability for this unique application have been performed. Design, fabrication and the experimental results as well as any identified inadequacies for future optimisation are reported and discussed in this paper., 23 pages, 16 figures

Published
2015
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15. First fabrication of full 3D-detectors at SINTEF

Author

Sherwood Parker, Angela Kok, Thor-Erik Hansen, Nicolas Lietaer, Jasmine Hasi, Preben Storås, Trond Andreas Hansen, Michal Marek Mielnik, C. Kenney, and Cinzia Da Via

Subjects
Fabrication, Pixel, business.industry, Computer science, Active edge, Detector, Electrical engineering, Chip, Nanolithography, Wafer, Detectors and Experimental Techniques, business, Instrumentation, Mathematical Physics, Leakage (electronics)
Abstract

3D-detectors, with electrodes penetrating through the entire substrates have drawn great interests for high energy physics and medical imaging applications. Since its introduction by C. Kenney et al in 1995, many laboratories have begun research on different 3D-detector structures to simplify and industrialise the fabrication process. SINTEF MiNaLab joined the 3D collaboration in 2006 and started the first 3D fabrication run in 2007. This is the first step in an effort to fabricate affordable 3D-detectors in small to medium size production volumes. The first run was fully completed in February 2008 and preliminary results are promising. Good p-n junction characteristics have been shown on selected devices at the chip level with a leakage current of less than 0.5 nA per pixel. Thus SINTEF is the second laboratory in the world after the Stanford Nanofabrication Facility that has succeeded in demonstrating full 3D-detectors with active edge. A full 3D-stacked detector system were formed by bump-bonding the detectors to the ATLAS readout electronics, and successful particle hit maps using an Am-241 source were recorded. Most modules, however, showed largely increased leakage currents after assembly, which is due to the active edge and p-spray acting as part of the total chip pn-junction and not as a depletion stop. This paper describes the first fabrication and the encountered processing issues. The preliminary measurements on both the individual detector chips and the integrated 3D-stacked modules are discussed. A new lot has now been started on p-type wafers, which offers a more robust configuration with the active edge acting as depletion stop instead of part of the pn-junction.

Published
2009
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