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International audience; Weaning a patient from mechanical ventilation is a critical task in Intensive Care Units, but it can be made safer by using Lung Ultrasound scoring. This scoring is currently done visually by specialists based on Lung Ultrasound artifacts among which are A-lines. Automating this scoring may help standardizing results and saving time for clinicians. In this paper, we propose a method to automatically detect A-lines from a manual delineation of the pleural line, and by using both the intensity profile of the LUS image and morphological operations. A score is then assigned to significant lines and represents the possibility of them being A-lines. The proposed method shows promising results in differentiating A-lines from other elements with an Area Under the Curve of 0.95; furthermore, using a threshold at 0.5 to detect A-lines leads to very good performances with an accuracy of 95% and a F0.5-score of 0.84.

Discretization translates the continuous functions into discrete version making them more adaptable for numerical computation and application in applied mathematics and computer sciences. In this article, discrete analogues of a generalization method of generating a new family of distributions is provided. Several new discrete distributions are derived using the proposed methodology. A discrete Weibull-Geometric distribution is considered and various of its significant characteristics including moment, survival function, reliability function, quantile function, and order statistics are discussed. The method of maximum likelihood and the method of moments are used to estimate the model parameters. The performance of the proposed model is probed through a real data set. A comparison of our model with some existing models is also given to demonstrate its efficiency.

In general, this research revealed the error of the common assumption that "a state of negativity, dependency and self-reliance has prevailed over the participation of Indian women in public life, and that she was suffering from marginalization and exclusion from participation in political, social and scientific life". In fact, woman played important role in political sphere and some important personalities have been taken into consideration to unveil their efforts in politics. Similarly, the Indian woman gained a great deal of political influence. She took responsibility for governing herself at times in managing governance affairs. This political role was not limited to Muslim women alone, but was also found among Sikh and Hindu women. This article appraises the role of woman in political sphere during Mughal Era and British domain.

In the era of Mughals & Britishers, the women of the sub-continent performed notable services in the field of education. Not only did they gain knowledge of religious affairs but also used to work for promoting education. We can see women discussed alongside men by the poets of sub-continent. In this paper, I will discuss the education related affairs in the sub-continent before and after 1857, the comparison of the standard of education before and after the arrival of Britishers and the role of women under both governments.

We propose an indirect method of ASTM D-1200 for measurement of viscosity from 0.1 to 30 stokes (St) using Ford cup 5 (range 2~ 12 St) by developing a statistical relation. General purpose low styrene content polyester resin (without adding initiator, hardener and accelerator) was used for viscosity measurement. In existing ASTM D 1200 standard, ford cups (1-4) are used to measure the viscosity up to 2 St, while fifth cup is used for measurement from 2 to 12 St. Viscosity above 12 St is not estimated using existing ASTM D- 1200 method. In contrast, our method and statistical relation proposed in this paper estimates viscosity in the flexible range of 0.1 to 30 St by using Ford cup 5 only. The estimated values were confirmed by existing ASTM D-1200 (0.1 to 12 St) and by using Ubbelohde viscometer (12 to 30 St). Values estimated above 12 St are from the proposed model are also in good conformance (percentage error ~ 5% or less) with experimental results. The satisfaction level of the estimated values with the experiments suggests that the model has also the potential for application to paints, polymer and oil industry.

We present the synthesis and characterization of gallium nitride (GaN) pine tree-like nanostructures (PTLNs) grown by low-pressure chemical vapor deposition. A high yield of PTLNs is densely arranged with each PTLN having a typical length of 15.46 ± 3.38 μm. From Raman spectroscopy, we observe anE2Hpeak at 570 ± 6 cm-1which is the primary characteristic of wurtzite. X-ray and ultraviolet photoemission spectroscopy reveal that the electronic structures of GaN PTLNs indicate an n-type character, while the work function and valence band maximum are determined to be 3.30 ± 0.05 and 3.85 ± 0.08 eV, respectively. We confirm the electronic nature of our structure from the current-voltage characteristics exhibiting rectifying behavior. Density functional theory calculations of GaN PTLNs modeled by germanium-doped GaN nanowires are consistent with our experimental findings. To summarize, the energy-band diagram is presented for the future of GaN PTLNs in the optoelectronic and sensing applications. Ministry of Education (MOE) This research is supported by the Ministry of Education, Singapore, under its Academic Research Fund Tier 2, grant no. MOE2016-T2-1-052 and Tier 1, grant no. MOE2019-T1-002063. F.A. and H.H. would like to acknowledge Toray Science and Technology Research Grant 2021.

An unsafe practice of abortion is the most neglected problems in the healthcare department in the underdeveloped countries of the world. Among multiple complications an unsafe abortion rare complication is retained foetal bone. The disease prevalence is about 0.15% in the patients experiencing hysteroscopy diagnostic. Patients presented the non-specific signs and symptoms. The research focuses on the abnormal uterine bleeding, subfertility, abnormal vaginal discharge, lower abdominal pain, dysmenorrhea, dyspareunia and bony fragments spontaneous passage. Fragments of retained foetal bone may also be a reason of a disease of acute pelvic inflammation in some of the patients without any due consideration of time interval after the act of an abortion. This persistent condition may also pose repeated occurrences of vaginitis or antimicrobial endometritis refractory management. Foreign body in the cavity of uterine is also to be considered. There is a need for the primary assessment of such patients through ultrasonography which is of very much clinical importance for various diagnostic assessments on case to case basis. In this research we have presented a case of missed retained foetal bone complication diagnosis having repeated acute disease of pelvic inflammation and vaginal discharge studied at Sir Ganga Ram Hospital from May to September 2017. Keywords: Retained Foetal Bone, pelvic inflammatory disease (PID), Pelvic Pain and Recurrent Vaginal Discharge.

Autoimmune pancreatitis refers to a diffused enlargement of the pancreas which narrows down the duct of the pancreas, fibrosis and lymphoplasmacytic infiltrations. The disease also attributes in the incidence of corticosteroid. In this research, we have studied a male patient of thirty-two years of age diagnosed with pancreatic head mass secondary obstructive jaundice and also secondary to biliary tract stricture along with unilateral exophthalmos. We raised the level of Serum immunoglobulin “G” with G-4 which is a high subclass immunoglobulin. Extraocular muscles unilateral thickness imaging was made possible through ophthalmological imaging. The better response of the patient was reported towards corticosteroid along with biliary strictures resolution, exophthalmos and pancreatic head mass. Keywords: IgG4, Systemic Disease, Autoimmune Pancreatitis (AIP), Head Mass, Bile, Pancreas, Serum, Muscles, Biliary, Pathogenesis and Exophthalmos.

Three different configurations of GaN are analysed to show robust and tunable light emitters from localised point defects induced in GaN crystal by a femtosecond laser (fs-laser). Localised irradiations of GaN are achieved using a fs-laser. The laser-induced damage threshold is found at a fluence of 130 ± 10 mJ/cm2. Raman spectroscopy allows for the characterization of irradiated GaN crystal while quasi-resonant photoluminescence mapping reveals a defect-related visible emission corresponding to the fs-laser irradiated area. From three different configurations of GaN, emission peaks vary from 620 to 680 nm-wavelengths for thin film, MBE intrinsically doped and Mg-doped NWs of GaN, respectively. The red emission in GaN is localized thanks to the new laser-induced fabrication and the engineering of the defect emission paves the way to further lighting applications.

Semiconductor structures offer unique properties at the nanoscale. Mastering the growth of semiconductor crystals and fabrication processes is crucial towards developing better opto-electronic devices. Morphological variations at nanoscale have a direct effect on available electronics states, impacting fundamental electronic properties and photonics capabilities of the material. This thesis focuses on one-dimensional Gallium Nitride (GaN) nanowires, Graphene Quantum Dots (GQDs) and two-dimensional hexagonal-Boron Nitride (hBN). First, synthesis of semiconductor nanostructures with a focus on nanoparticle mediated growth of one-dimensional Gallium Nitride crystal is developed. Catalyst-assisted growth of GaN nanowires using a Low Pressure Chemical Vapour Deposition (LPCVD) system is shown. The choice of growth catalyst influences directly the GaN crystal and the morphology of nanowires along with growth parameters such as temperature, vacuum pressure, precursor gases or time. An uncommon nanostructure of GaN in the shape of pine trees is introduced. Next, promising emission from GaN nanowires and hBN monolayers in the visible range is reported. Defects in LPCVD-grown GaN nanowires show yellow and green luminescences. Besides, femto-second pulsed laser is used, on defect-free nanowires grown by molecular beam epitaxy, to intentionally induce optically-active defects. Above a laser threshold power the irradiated GaN nanowires melt, higher power sublimates the crystal. Irradiated GaN is characterised as Wurtzite crystal and show emission in the visible range, additionally to the band-to-band UV luminescence. Similar experiment on hBN monolayers show defect-related visible emission near the irradiated areas. Contrary to GaN nanowires, where a wide emission is observed, hBN defects show strong and sharp emission. Point defects created in hBN - monolayers and flakes - are shown to be single photons emitters. Finally, fabrication of efficient micro- and nano-scale emitters is of crucial importance for optical nano-devices. In conventional semiconductors, such as Si or GaAs, fabrication processes can involve expensive and time consuming electron beam lithography and etching. Using femto-second pulsed laser, efficient and cost-effective GaN and hBN-based localised micro and nanometer-size light emitters can be fabricated using optically active defect states. Coupling these nano-emitters with surface plasmons of another nanostructure can improve the emission rate as shown by coupling GQDs to single Bi2Te3 nanoplates. From synthesis by chemical vapour deposition methods to structural and optical characterisation, this thesis will show how emission wavelength can be modulated and localised micro-/nano-emitters be fabricated before coupling them with surface plasmons to improve the emission rate for more efficient and bright emitters. Doctor of Philosophy

The low pressure chemical vapor deposition (LPCVD) method is used to synthesize GaN nanowires. It is an alternative technique to the more conventional molecular beam epitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE). Nanowires grown by LPCVD are shown to have a single-crystal Wurtzite structure and present a strong luminescence at a near-band-gap energy. A sub-band-gap defect-related luminescence is also observed in the visible range. Identified as yellow (YL) and green (GL) luminescences, these emissions are very similar to the one reported from bulk and thin 2D GaN film samples and may be attributed to comparable defects. In this work, using photoluminescence (PL) spectroscopy with an above-band-gap excitation and a time-resolved PL with a below-band-gap excitation, we investigate whether these luminescences originate from bulk and/or surface defects. We demonstrate that the YL defect-related band can be significantly suppressed by 88% after passivating the surface of nanowires with aluminum oxide. This suppression is in favor of the localized surface defects responsible for the yellow luminescence, while the green luminescence band originates from deeper bulk defects.