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The filled function method is a deterministic algorithm for finding a global minimizer of global optimization problems, and its effectiveness is closely related to the form of the constructed filled function. Currently, the filled functions mainly have three drawbacks in form, namely, parameter adjustment and control (if any), inclusion of exponential or logarithmic functions, and properties that are discontinuous and non-differentiable. In order to overcome these limitations, this paper proposed a parameter-free filled function that does not include exponential or logarithmic functions and is continuous and differentiable. Based on the new filled function, a filled function method for solving unconstrained global optimization problems was designed. The algorithm selected points in the feasible domain that were far from the global minimum point as initial points, and improved the setting of the step size in the stage of minimizing the filled function to enhance the algorithm's global optimization capability. In addition, tests were conducted on 14 benchmark functions and compared with existing filled function algorithms. The numerical experimental results showed that the new algorithm proposed in this paper was feasible and effective.

In this work, the phase transition process of β-Ga2O3 thin films under heating and (or) electron irradiation condition was investigated by in-situ transmission electron microscopy. It is found that only under the high temperature, β-Ga2O3 did not undergo phase transition even when the temperature was up to 1000 °C. When under electron irradiation condition, the unconventional phase transition from β-Ga2O3 to δ-Ga2O3 occurred with a slow rate. When electron irradiation was coupled with a thermal field, the initial temperature of phase transition decreased, and the speed of phase transition also greatly accelerated. The new phase maintains crystallography relationship with the β-Ga2O3 parent phase as following: [010]β//[011‾]δ, (200)β//(2‾11)δ, and (402‾)β//(411)δ. The results reveal that electron irradiation can trigger the phase transition process from β-Ga2O3 to δ-Ga2O3, and the high temperature obviously accelerates the rate of phase transition process.

Abstract Epigenetic mechanisms such as DNA methylation and hydroxymethylation play a significant role in depression. This research has shown that Ten‐eleven translocation 2 (Tet2) deficiency prompts depression‐like behaviors, but Tet2's transcriptional regulation remains unclear. In the study, bioinformatics is used to identify nuclear receptor subfamily 2 group E member 3 (Nr2e3) as a potential Tet2 regulator. Nr2e3 is found to enhance Tet2's transcriptional activity by binding to its promoter region. Nr2e3 knockdown in mouse hippocampus leads to reduced Tet2 expression, depression‐like behaviors, decreased hydroxymethylation of synaptic genes, and downregulation of synaptic proteins like postsynaptic density 95 KDa (PSD95) and N‐methy‐d‐aspartate receptor 1 (NMDAR1). Fewer dendritic spines are also observed. Nr2e3 thus appears to play an antidepressant role under stress. In search of potential treatments, small molecule compounds to increase Nr2e3 expression are screened. Azacyclonal (AZA) is found to enhance the Nr2e3/Tet2 pathway and exhibited antidepressant effects in stressed mice, increasing PSD95 and NMDAR1 expression and dendritic spine density. This study illuminates Tet2's upstream regulatory mechanism, providing a new target for identifying early depression biomarkers and developing treatments.

Maedi-visna virus (MVV) and caprine arthritis encephalitis virus (CAEV) are members of a group of genetically highly homologous lentiviruses collectively referred to as small ruminant lentiviruses (SRLVs). SRLVs can infect sheep, goats and other small ruminants, causing multisystemic disease with progressive and persistent inflammatory changes, severely reducing animal productivity and impeding animal trade. The capsid protein of SRLVs, p28, is highly conserved among strains and is a commonly used marker for the detection of SRLVs. In this study, two monoclonal antibodies (mAbs), designated G8F7 and A10C12, against p28 were generated using a recombinant p28 protein expressed in Escherichia coli as an immunogen. Functional analysis showed that these two monoclonal antibodies could be used in iELISA, immunofluorescence assays (IFA) and western blot assays to detect p28 or Gag precursor proteins of SRLVs. Two linear epitopes, 61GNRAQKELIQGKLNEEA77 (E61-77) and 187CQKQMDRVLGTRVQQATVEEKMQACR212 (E187-212), which are recognized by G8F7 and A10C12, respectively, were identified through truncation of the GST-fused p28. Amino acid sequence alignment showed that the epitope E61-77 is conserved among SRLVs, with a dominant mutation site (K72R) that does not disrupt recognition by G8F7. E187-212 was found to exhibit variability among SRLVs, but the majority of mutant epitopes are recognized by A10C12, with the exception of a mutant epitope from an isolate with undefined subtypes from Ovis aries, which was not recognized. These findings may facilitate future study of SRLVs and promote the development of methods for the detection of these viruses.

Clematis is the queen of the vines, being an ornamental plant with high economic value. Waterlogging stress reduces the ornamental value of the plant and limits its application. Melatonin plays an important role in plant resistance to abiotic stresses. In this study, the physiological responses and gene expression levels of two wild species, namely, Clematis tientaiensis and Clematis lanuginosa, and two horticultural varieties, namely, ‘Sen-No-Kaze’ and ‘Viva Polonia,’ under waterlogging stress were analyzed to determine the effect of melatonin on waterlogging tolerance. The results showed that the waterlogging tolerances of C. lanuginosa and ‘Sen-No-Kaze’ were relatively poor, but were significantly improved by concentrations of 100 μmol·L-1 and 50 μmol·L-1 melatonin. C. tientaiensis and ‘Viva Polonia’ had relatively strong tolerance to waterlogging, and this was significantly improved by 200 μmol·L-1 melatonin. Under waterlogging stress, the relative conductivity and H2O2 content of Clematis increased significantly; the photosynthetic parameters and chlorophyll contents were significantly decreased; photosynthesis was inhibited; the contents of soluble protein and soluble sugars were decreased. Effective improvement of waterlogging tolerance after exogenous melatonin spraying, the relative conductivity was decreased by 4.05%-27.44%; the H2O2 content was decreased by 3.84%-23.28%; the chlorophyll content was increased by 35.59%-103.36%; the photosynthetic efficiency was increased by 25.42%-45.86%; the antioxidant enzyme activities of APX, POD, SOD, and CAT were increased by 28.03%-158.61%; the contents of proline, soluble protein, and soluble sugars were enhanced, and cell homeostasis was improved. Transcription sequencing was performed on wild Clematis with differences in waterlogging tolerance, and nine transcription factors were selected that were highly correlated with melatonin and that had the potential to improve waterlogging tolerance, among which LBD4, and MYB4 were significantly positively correlated with the antioxidant enzyme system, and bHLH36, DOF36, and WRKY4 were significantly negatively correlated. Photosynthetic capacity was positively correlated with DOF36 and WRKY4 while being significantly negatively correlated with MYB4, MOF1, DOF47, REV1 and ABR1. Melatonin could enhance the flooding tolerance of Clematis by improving photosynthetic efficiency and antioxidant enzyme activity. This study provides an important basis and reference for the application of melatonin in waterlogging-resistant breeding of Clematis.

In this paper, an integrated device which realized the dual-mode integration of power amplifier (PA) and radio frequency (RF) switch based on GaN dual-gate (DG) structure is designed and fabricated. The integrated device provides two working modes and meets the performance requirements of PA and RF switch. In the transmit (Tx) mode, the integrated device is used as PA. At the frequency of 3.6 GHz, compared with the conventional GaN HEMT (high electron mobility transistor) as PA, due to the field modulation effect of the dual-gate structure, the current collapse is effectively suppressed, and the output power density $(P_{out})$ of the integrated device is increased from 6.90 W/mm to 7.85 W/mm, and the power added efficiency (PAE) is increased from 44.3% to 51.1%. In the receive (Rx) mode, the integrated device is used as RF switch. Compared with conventional RF switch, the isolation of integrated devices is significantly improved. At the frequency of 3.6GHz, the isolation is improved from 19.4 dB to 41.0 dB; At the frequency of 40 GHz, the isolation is improved from 3.0 dB to 29.7 dB. The integrated device provides a novel function integration scheme for RF frontends, with great potential for improving the integration and dimension of future communication systems.

In order to improve the off-state and breakdown characteristics of double-channel GaN HEMTs, an ultra-thin barrier layer was chosen as the second barrier layer. The strongly polarized and ultra-thin AlN sub-barrier and the InAlN sub-barrier are great candidates. In this article, the two epitaxial structures, AlGaN/GaN/AlN/GaN (sub-AlN) HEMTs and AlGaN/GaN/InAlN/GaN (sub-InAlN) HEMTs, were compared to select a more suitable sub-barrier layer. Through TEM images of the InAlN barrier layer, the segregation of In components can be seen, which decreases the mobility of the second channel. Thus, the sub-AlN HEMTs have a higher output current density and transconductance than those of the sub-InAlN HEMTs. Because the high-quality AlN barrier layer shields the gate leakage current, a 294 V breakdown voltage was achieved by the sub-AlN HEMTs, which is higher than the 121 V of the sub-InAlN HEMTs. The current gain cut-off frequency (fT) and maximum oscillation frequency (fmax) of the sub-AlN HEMTs are higher than that of the sub-InAlN HEMTs from low to high bias voltage. The power-added efficiency (PAE) and output power density (Pout) of the sub-AlN HEMTs are 57% and 11.3 W/mm at 3.6 GHz and 50 V of drain voltage (Vd), respectively. For the sub-InAlN HEMTs, the PAE and Pout are 41.4% and 8.69 W/mm, because of the worse drain lag ratio. Thus, the Pout of the sub-AlN HEMTs is higher than that of the sub-InAlN HEMTs.

Immunoassays have been widely used for the determination of various analytes in the fields of disease diagnosis, food safety, and environmental monitoring. Dual-signal immunoassays are now advanced and integrated detection technologies with excellent self-correction and self-validation capabilities. In this work, we summarize the recent advances in the development of optical and electrochemical dual-signal immunoassays, including colorimetric, fluorescence, surface-enhanced Raman spectroscopy (SERS), electrochemical, electrochemiluminescence, and photoelectrochemical methods. This review particularly emphasizes the working principle of diverse dual-signal immunoassays and the utilization of dual-functional molecules and nanomaterials. It also outlines the challenges and prospects of future research on dual-signal immunoassays.

Cisplatin-based chemotherapy is the current standard care for lung cancer patients; however, drug resistance frequently develops during treatment, thereby limiting therapeutic efficacy.The molecular mechanisms underlying cisplatin resistance remain elusive. In this study, we conducted an analysis of microarray data from the Gene Expression Omnibus (GEO) database under the accession numbers GSE21656, which encompassed expression profiling of cisplatin-resistant H460 (DDP-H460)and the parental cells (H460). Subsequently, we calculated the differentially expressed genes (DEGs) between DDP-H460 and H460. Gene Ontology (GO) enrichment analysis and Kyoto Encyclopedia of Genes and Genomes (KEGG) pathway analysis of DEGs demonstrated significant impact on the Rap1, PI3K/AKT and MAPK signaling pathways. Moreover, protein and protein interaction (PPI) network analysis identified PRKCA, DET1, and UBE2N as hub genes that potentially contribute predominantly to cisplatin resistance. Ultimately, PRKCA was selected for validation due to its significant prognostic effect, which predicts unfavorable overall survival and disease-free survival in patients with lung cancer. Network analysis conducted on The Cancer Genome Atlas (TCGA) database revealed a strong gene-level correlation between PRKCA and TP53, CDKN2A, BYR2, TTN, KRAS, and PIK3CA; whereas at the protein level, it exhibited a high correlation with EGFR, Lck, Bcl2, and Syk. The in vitro experiments revealed that PRKCA was upregulated in the cisplatin-resistant A549 cells (DDP-A549), while knockdown of PRKCA increased DDP-A549 apoptosis upon cisplatin treatment. Moreover, we observed that PRKCA knockdown attenuated DDP-A549 proliferation, migration and invasion ability. Western blot analysis demonstrated that PRKCA knockdown downregulated phosphorylation of PI3K expression while upregulated the genes involved in ferroptosis signaling. In summary, our results elucidate the role of PRKCA in acquiring resistance to cisplatin and underscore its potential as a therapeutic target for cisplatin-resistant lung cancer.

This study analyzed the fate and transfer of PAHs through multiple media in Dianchi Lake and the sediment records of polycyclic aromatic hydrocarbons (PAHs) in sediments. The model simulation results showed the simulated concentrations to be in good agreement with the measured values. The concentration and total amount of PAHs were the highest in the sediment, which is an important sink for PAHs in lake systems. The main transport direction of the PAHs in the three phases was from the atmosphere to the water to the sediment. Advection and emission inputs were the primary input pathways for PAHs in the atmosphere, and advection output was the main removal path. The main input sources pathways for PAHs in sediments was the sedimentation of particulate matter in water, with diffusion and degradation being the primary methods of removal. Advection and atmospheric dry and wet deposition were the main sources of PAHs in water, with particulate deposition being the primary removal process. The range of PAHs was 336–3520 ng/g in sediments in Dianchi Lake, with an average of 1569 ng/g, peaking in 2012. Among the predicted future PAH concentrations in the sediments under the five shared socioeconomic pathways (SSPs), the lowest PAH concentration was found under SSP3 from 2025 to 2035, whereas the lowest PAH concentration was found under SSP4 from 2035 to 2050. In the sustainable path of SSP1, although the concentration of PAH pollutants showed an increasing trend in the short term, the increase in PAHs concentration in sediments slowed in the long run.

GaN HEMT devices are sensitive to the single event effect (SEE) caused by heavy ions, and their reliability affects the safe use of space equipment. In this work, a Ge ion (LET = 37 MeV·cm2/mg) and Bi ion (LET = 98 MeV·cm2/mg) were used to irradiate Cascode GaN power devices by heavy ion accelerator experimental device. The differences of SEE under three conditions: pre-applied electrical stress, different LET values, and gate voltages are studied, and the related damage mechanism is discussed. The experimental results show that the pre-application of electrical stress before radiation leads to an electron de-trapping effect, generating defects within the GaN device. These defects will assist in charge collection so that the drain leakage current of the device will be enhanced. The higher the LET value, the more electron–hole pairs are ionized. Therefore, the charge collected by the drain increases, and the burn-out voltage advances. In the off state, the more negative the gate voltage, the higher the drain voltage of the GaN HEMT device, and the more serious the back-channel effect. This study provides an important theoretical basis for the reliability of GaN power devices in radiation environments.

Polymers of intrinsic microporosity (PIMs) stand out as promising membrane materials with exceptional separation performance. In this study, we crafted a highly efficient gas separation membrane using an emerging material, called cyclohexyl-fused spirobiindane-based PIM (CCS-PIM). The CCS-PIM features a robust and rigid microporous structure with a high specific surface area (SBET ​= ​704.6 ​m2/g), exhibiting excellent CO2-selective adsorption capacity. The CO2 adsorption uptake is 0.78 ​mmol/g at 273 ​K and 0.15 ​bar, leading to IAST selectivity of 25.2 for CO2/N2 (15/85 v/v) and 16.7 for CO2/CH4 (50/50 v/v) at 298 ​K. The precisely tuned pore size of the CCS-PIM membrane leads to an enhanced molecular sieving effect, showcasing superior selectivity across various gas pair separations. It demonstrates an O2/N2 selectivity of 6.03 and a CO2/CH4 selectivity of 26.1, surpassing the 2008 Robeson upper bounds. This study suggests a strategic method to improve gas separation efficiency by customizing a locked PIM structure with precise molecular sieving through the insertion of variously sized rings.

Paper-based devices have attracted extensive attention due to the growing demand for disposable flexible electronics. Herein, we integrate semiconducting devices on cellulose paper substrate through a simple abrasion technique that yields high-performance photodetectors. A solvent-free WS2 film deposited on paper favors an effective electron-hole separation and hampers recombination. The as-prepared paper-based WS2 photodetectors exhibit a sensitive photoresponse over a wide spectral range spanning from ultraviolet (365 nm) to near-infrared (940 nm). Their responsivity value reaches up to ~270 mA W−1 at 35 V under a power density of 35 mW cm−2. A high performance photodetector was achieved by controlling the environmental exposure as the ambient oxygen molecules were found to decrease the photoresponse and stability of the WS2 photodetector. Furthermore, we have built a spectrometer using such a paper-based WS2 device as the photodetecting component to illustrate its potential application. The present work could promote the development of cost-effective disposable photodetection devices.

Floral scent is a crucial characteristic that greatly affects the reproductive process and also the market value of numerous ornamental crops. As the pivotal species in basal dicotyledonous, Clematis is widely favored as an ornamental vine plant due to its varied colors and shapes of flowers. However, the diversity and complexity of the floral fragrance in Clematis is largely unexplored. Thus, on the basis of the initial sensory survey, four fragrant wild Clematis species and five cultivars were selected to investigate the variation of the floral volatile profiling between the wild Clematis species and their cultivars. Our results demonstrated that a total of 162 volatile compositions, including terpenoids, benzenoids, fatty acid derivatives, and N-containing compounds, were successively detected by the combination of dynamic headspace collection and GC-MS analysis. The qualitative and quantitative comparison combined with clustering and PCA analysis indicated the interspecific discrepancy in floral volatiles between the wild Clematis species and cultivars. C. finetiana exhibited a higher emission with the characteristic releasing pattern being distinct from other species. In conclusion, the exploitation of the emission patterns, biosynthesis, and potential biological functions of floral scent, especially for terpenoids and methyl esters, provides a comprehensive understanding of volatile metabolism in fragrant Clematis species and their cultivars. These findings can be useful for aromatic resources screening and breeding strategies developing to create new aromatic cultivars of Clematis.

In this work, high performance InAlN/GaN HEMT based on the n+GaN regrown ohmic contact with n+GaN contact ledge structure is proposed. The regrown ohmic contact of InAlN/GaN HEMT is formed by MBE n+GaN regrowth and self-stopping etching, which makes the total ohmic contact resistance between the 2DEG channel and the ohmic metal decrease to $0.12 \Omega \cdot $ mm and forms n+GaN contact ledge structure. Owing to the n+GaN contact ledge on the InAlN barrier, with the increasing of drain-source voltage (VDS), an additional current path comes into being between the n+GaN contact ledge on the InAlN barrier and the 2DEG channel, which can “shorten” the device effective drain-source distance, thus further reducing the parasitic resistance. Compared with regrown InAlN/GaN HEMT without n+GaN contact ledge structure, the peak transconductance (Gm.max) of regrown InAlN/GaN HEMT with n+GaN contact ledge structure increases from 747 mS/mm to 874 mS/mm, and the saturation current density (ID.max) increases from 2.6 A/mm to 2.9 A/mm. Besides, the self-stopping etching on the access region does not induce extra defects, and negligible current collapse is obtained. As the results of low parasitic resistance, high output current density, low knee voltage and negligible current collapse, power-added-efficiency (PAE) of 44% together with output power density (Pout) of 2.5 W/mm is achieved at 30 GHz and $V_{\mathrm{ DS}}$ of 10 V, which indicates regrown InAlN/GaN HEMT with n+GaN contact ledge structure has great potential for millimeter-wave low voltage applications. Additionally, the transfer and schottky gate characteristics show negligible degradation after OFF/ON-state electrical stress tests.

Abstract Sphaeropteris lepifera is a tree fern in the Cyatheaceae, a family that has played an important role in the evolution of plant systems. This study aimed to analyze the complete chloroplast genome of S. lepifera and compared it with previously published chloroplast genomes Cyatheaceae family. The chloroplast genome of S. lepifera comprised 162,114 bp, consisting of a large single copy (LSC) region of 86,327 bp, a small single copy (SSC) region of 27,731 bp and a pair of inverted repeats (IRa and IRb) of 24,028 bp each. The chloroplast genome encoded 129 genes, comprising 32 transfer RNAs, 8 ribosomal RNAs, and 89 protein-coding genes. Comparison of the genomes of 7 Cyatheaceae plants showed that the chloroplast genome of S. lepifera was missing the gene trnV-UAC. Expansion of the SSC region led to the difference in the chloroplast genome size of S. lepifera. Eight genes, atpI, ccsA, petA, psaB, rpl16, rpoA, rpoC1, and ycf2 have high nucleic acid diversity and can be regarded as potential molecular markers. The genes trnG-trnR and atpB were suitable for DNA barcodes between different communities of S. lepifera. The S. lepifera groups in Zhejiang Province probably diffused from Pingtan and Ningde, Fujian. The results will provide a basis for species identification, biological studies, and endangerment mechanism of S. lepifera.

Depression is one of the common psychiatric diseases worldwide. Previous studies showed that chronic stress could increase defecation and inhibit weight gain; however, the effects of chronic stress on gastrointestinal peristalsis had not been clarified. To study the mechanisms of depression, chronic restraint stress (CRS) is widely used as a traditional depressive animal model. In this study, we investigate the effects of CRS on gastric emptying and intestinal propulsion in mice. Our results showed that the mice exhibited obvious depression-like behaviors 4 weeks after CRS. Compared with the control group, gastric emptying and intestinal propulsion were significantly decreased in the CRS group. Further, we examined the expression of ArhGEF18, a Rho-specific guanine nucleotide exchanging factor, which was significantly reduced in the gut in the CRS group. Therefore, CRS caused depressive behaviors and abnormal gastrointestinal function. The ArhGEF18-RhoA/Rho signaling pathway may be a potential mediator in the brain–gut axis under stress.

Abstract With the rapid development of emerging artificial intelligence technology, brain–computer interfaces are gradually moving from science fiction to reality, which has broad application prospects in the field of intelligent robots. Looking for devices that can connect and communicate with living biological tissues is expected to realize brain–computer interfaces and biological integration interfaces. Brain‐like neuromorphic devices based on memristors may have profound implications for bridging electronic neuromorphic and biological nervous systems. Ultra‐low working voltage is required if memristors are to be connected directly to biological nerve signals. Therefore, inspired by the high‐efficient computing and low power consumption of biological brain, memristors directly driven by the electrical signaling requirements of biological systems (bio‐voltage) are not only meaningful for low power neuromorphic computing but also very suitable to facilitate the integrated interactions with living biological cells. Herein, attention is focused on a detailed analysis of a rich variety of physical mechanisms underlying the various switching behaviors of bio‐voltage memristors. Next, the development of bio‐voltage memristors, from simulating artificial synaptic and neuronal functions to broad application prospects based on neuromorphic computing and bio‐electronic interfaces, is further reviewed. Furthermore, the challenges and the outlook of bio‐voltage memristors over the research field are discussed.

It is daunting to determine the etiology of rapidly progressive dementia (RPD), which includes metabolic, neoplastic, infectious, autoimmune, neurodegenerative and other conditions. Herein, we illustrate an unusual case of a patient primarily exhibiting RPD, overlapping sleep dysfunction, psychosis and abnormal movement, which was finally defined as anti-IgLON5 disease, a novel and rare autoimmune encephalopathy. Furthermore, we longitudinally described his cognitive and psychological performance in detail, and determined that early initiation of immunotherapy in this patient did not result in a good outcome. These data highlight anti-IgLON5 disease as a possible differential diagnosis in patients with RPD.

It is anticipated that the rapid development of the Internet of Things (IoT) will improve the quality of human life. Nonetheless, large amounts of data need to be replicated, stored, processed, and shared, posing formidable challenges to communication bandwidth and information security. Herein, it is reported that polyimide (PI) threshold‐switching memristors exhibit Gaussian conductance and randomly set voltage distribution with nonideal properties to create a compression and encryption engine with a single chip. The Gaussian conductance distribution is used to achieve compressed sensing (CS) to integrate encryption into compression, and the spontaneous formation of the one‐time‐sampling measurement matrix satisfies absolute security. Moreover, the bitstreams generated by randomly distributed set voltages are used to diffuse the ciphertext from CS to improve security. The engine is shown to be secure even if the eavesdropper knows both the plaintext and the corresponding ciphertext. It has compression performance advantages that take both efficiency and security into account. In addition, due to the superior high temperature and mechanical properties of PI, the engine can continue to function normally in harsh environments. Herein, an excellent solution is offered for ensuring the efficiency and security of IoT.

Abstract Background Clematis species are attractive ornamental plants with a variety of flower colors and patterns. Heat stress is one of the main factors restricting the growth, development, and ornamental value of Clematis. Clematis lanuginosa and Clematis crassifolia are large-flowered and evergreen Clematis species, respectively, that show different tolerance to heat stress. We compared and analyzed the transcriptome of C. lanuginose and C. crassifolia under heat stress to determine the regulatory mechanism(s) of resistance. Results A total of 1720 and 6178 differentially expressed genes were identified from C. lanuginose and C. crassifolia, respectively. The photosynthesis and oxidation–reduction processes of C. crassifolia were more sensitive than C. lanuginose under heat stress. Glycine/serine/threonine metabolism, glyoxylic metabolism, and thiamine metabolism were important pathways in response to heat stress in C. lanuginose, and flavonoid biosynthesis, phenylalanine metabolism, and arginine/proline metabolism were the key pathways in C. crassifolia. Six sHSPs (c176964_g1, c200771_g1, c204924_g1, c199407_g2, c201522_g2, c192936_g1), POD1 (c200317_g1), POD3 (c210145_g2), DREB2 (c182557_g1), and HSFA2 (c206233_g2) may be key genes in the response to heat stress in C. lanuginose and C. crassifolia. Conclusions We compared important metabolic pathways and differentially expressed genes in response to heat stress between C. lanuginose and C. crassifolia. The results increase our understanding of the response mechanism and candidate genes of Clematis under heat stress. These data may contribute to the development of new Clematis varieties with greater heat tolerance.

Passivation is commonly used to suppress current collapse in AlGaN/GaN HEMTs. However, the conventional PECV-fabricated SiNx passivation layer is incompatible with the latest process, like the “passivation-prior-to-ohmic” method. Research attention has therefore turned to high-temperature passivation schemes. In this paper, we systematically investigated the differences between the SiNx/GaN interface of two high-temperature passivation schemes, MOCVD-SiNx and LPCVD-SiNx, and investigated their effects on the ohmic contact mechanism. By characterizing the device interface using TEM, we reveal that during the process of MOCVD-SiNx, etching damage and Si diffuses into the semiconductor to form a leakage path and reduce the breakdown voltage of the AlGaN/GaN HEMTs. Moreover, N enrichment at the edge of the ohmic region of the LPCVD-SiNx device indicates that the device is more favorable for TiN formation, thus reducing the ohmic contact resistance, which is beneficial to improving the PAE of the device. Through the CW load-pull test with drain voltage VDS = 20V, LPCVD-SiNx devices obtain a high PAE of 66.35%, which is about 6% higher than MOCVD-SiNx devices. This excellent result indicates that the prospect of LPCVD-SiNx passivation devices used in 5G small terminals will be attractive.

A GaN high-electron-mobility transistor (HEMT) was simulated using the semiconductor simulation software Silvaco TCAD in this paper. By constructing a two-dimensional structure of GaN HEMT, combined with key models such as carrier mobility, the effects of a different state, different incidence position, different drain voltage, different LET values, and a different incidence angle on the single-event transient effect of GaN HEMT are simulated. LET stands for the linear energy transfer capacity of a particle, which refers to the amount of energy transferred by the particle to the irradiated substance on the unit path. The simulation results show that for GaN HEMTs, the single-event transient effect is more obvious when the device is in off-state than in on-state. The most sensitive location of GaN HEMTs to the single-event effect is in the region near the drain. The peak transient current increases with the increase in the drain bias and incident ion LET values. The drain charge collection time increases with the angle of incidence of heavy ion.

In this paper, the impact of ohmic structure on channel-to-channel (C2C) coupling effect in InAlN/GaN double channel (DC) HEMTs is systematically analyzed and studied. For the un-recessed ohmic structure, the electrons in the upper channel can easily inject into the bottom channel due to the ultra-thin InAlN back barrier layer. Therefore, the maximum drain current and transconductance peak of the bottom channel significantly increase. For recessed ohmic structure, the reduced vertical electric field strength of the upper channel can effectively weaken the coupling effect between the two GaN channels. Benefiting from the suppressed vertical transport of electrons in the upper channel, higher drain current and transconductance of the upper channel are obtained in the recessed ohmic structure. In addition, the transmission electron microscope (TEM) microstructural analysis of the DC HEMTs with recessed ohmic structure was also performed. This work shows that the recessed ohmic structure can modulate the electron transport mode in the InAlN/GaN DC HEMTs. The coupling effect of the two channels will play a major role in influencing the characteristics of current gain cutoff frequency ( $\,f_{\mathrm{ T}}$ ) / maximum power gain cutoff frequency ( $\,f_{\mathrm{ max}}$ ) versus $V_{\mathrm{ GS}}$ and have a significant effect on large-signal characteristics, which is quite attractive for the fabrication of power microwave GaN-based HEMTs with wide gate swing.

Graphene oxide nanofiltration membranes with tunable interlayer spacing tend to be either unstable in water or have low water permeation rates. Here the authors report a general synthetic method to achieve ultrafine metal oxide - reduced graphene oxide nanocomposites for dye filtration, achieving high water permeability and selectivity.

It is of great importance to have sensitive and accurate detection of cis-diol-containing biologically related substances because of their important functions in the research fields of metabolomics, glycomics, and proteomics. Boronic acids can specifically and reversibly interact with 1,2- or 1,3-diols to form five or six cyclic esters. Based on this unique property, boronic acid-based materials have been used as synthetic receptors for the specific recognition and detection of cis-diol-containing species. This review critically summarizes the recent advances with boronic acid-based materials as recognition elements and signal labels for the detection of cis-diol-containing biological species, including ribonucleic acids, glycans, glycoproteins, bacteria, exosomes, and tumor cells. We also address the challenges and future perspectives for developing versatile boronic acid-based materials with various promising applications.

In this study, AlGaN/GaN nanochannel high-electron-mobility transistors (HEMTs) with tri-gate (TGN-devices) and dual-gate (DGN-devices) structures were fabricated and investigated. It was found that the peak value of the transconductance (Gm), current gain cut-off frequency (fT) and power gain cut-off frequency (fmax) of the TGN-devices were larger than that of the DGN-devices because of the enhanced gate control from the top gate. Although the TGN-devices and DGN-devices demonstrated flattened transconductance, fT and fmax profiles, the first and second transconductance derivatives of the DGN-devices were lower than those of the TGN-devices, implying an improvement in linearity. With the nanochannel width decreased, the peak value of the transconductance and the first and second transconductance derivatives increased, implying the predominant influence of sidewall gate capacitance on the transconductance and linearity. The comparison of gate capacitance for the TGN-devices and DGN-devices revealed that the gate capacitance of the tri-gate structure was not simply a linear superposition of the top planar gate capacitance and sidewall gate capacitance of the dual-gate structure, which could be attributed to the difference in the depletion region shape for tri-gate and dual-gate structures.

In this paper, a P-type GaN buried layer is introduced into the buffer layer of AlGaN/GaN HEMTs, and the effect of the P-type GaN buried layer on the device’s temperature characteristics is studied using Silvaco TCAD software. The results show that, compared to the conventional device structure, the introduction of a P-type GaN buried layer greatly weakens the peak of the channel electric field between the gate and drain of the device. This leads to a more uniform electric field distribution, a substantial reduction in the lattice temperature of the device, and a more uniform temperature distribution. Therefore, the phenomenon of negative resistance caused by self-heating effect is significantly mitigated, while the breakdown performance of the device is also notably enhanced.

Using MICAPS data, ERA-Interim 0.25°×0.25° global high resolution reanalysis data, hourly surface observation data, FY-2G satellite cloud picture and CR/CB radar data from Yulin, a comprehensive analysis was conducted for an extreme heavy storm rain event occurred in northern Shaanxi province from 20:00 BT 25 July to 08:00 BT 26 July 2017. The results are as follows. (1) The heavy precipitation event exhibited a clear east-west zonal distribution, with slow moving high rainfall during a long time period in a small area, and mainly concentrating at night. Typical beta mesoscale characteristics showed in areas of heavy rainfall. (2) The westerly trough moved rapidly eastward and pressed down to the south. The stable maintenance of western Pacific subtropical high pressure favored the strengthening of the positive vorticity advection in front of the trough and the development of a low-value system in the surface layer. The nascent Hetao vortex at 850 hPa and southeast low-level jet are the direct impact systems to this heavy precipitation event. (3) Hetao vortex is a shallow thermal low pressure system with three development stages. In the initial stage, a low vortex formed in weak zone with warm center of asymmetry structure. In the mature and vigorous phases, the vortex changed into symmetric warm center structure, and heavy rainfall starts in the mature stage and reaches peak in the vigorous stage. (4) Hetao vortex directly affects and controls the occurrence and development of mesoscale low pressure at the ground. Mesoscale low pressure is stable in the west of Yulin. Cold and warm convergence are formed in the west and east of the mesoscale low, respectively, which continuously trigger the generation of convective monomers.

Phosphatidylserine (PS) is an anionic phospholipid in the eukaryotic membrane and is abundant in the brain. Accumulated studies have revealed that PS is involved in the multiple functions of the brain, such as activation of membrane signaling pathways, neuroinflammation, neurotransmission, and synaptic refinement. Those functions of PS are related to central nervous system (CNS) diseases. In this review, we discuss the metabolism of PS, the anti-inflammation function of PS in the brain; the alterations of PS in different CNS diseases, and the possibility of PS to serve as a therapeutic agent for diseases. Clinical studies have showed that PS has no side effects and is well tolerated. Therefore, PS and PS liposome could be a promising supplementation for these neurodegenerative and neurodevelopmental diseases.

Biosensors show promising prospects in the assays of various targets due to their advantages of high sensitivity, good selectivity and rapid response. Molecular recognition is a key event of biosensors, which usually involves the interaction of antigen–antibody, aptamer–target, lectin–sugar, boronic acid–diol, metal chelation and DNA hybridization. Metal ions or complexes can specifically recognize phosphate groups in peptides or proteins, obviating the use of biorecognition elements. In this review, we summarized the design and applications of biosensors with metal ion–phosphate chelation interaction for molecular recognition. The sensing techniques include electrochemistry, fluorescence, colorimetry and so on.

Heterogeneous protease biosensors show high sensitivity and selectivity but usually require the immobilization of peptide substrates on a solid interface. Such methods exhibit the disadvantages of complex immobilization steps and low enzymatic efficiency induced by steric hindrance. In this work, we proposed an immobilization-free strategy for protease detection with high simplicity, sensitivity and selectivity. Specifically, a single-labeled peptide with oligohistidine-tag (His-tag) was designed as the protease substrate, which can be captured by a nickel ion-nitrilotriacetic acid (Ni-NTA)-conjugated magnetic nanoparticle (MNP) through the coordination interaction between His-tag and Ni-NTA. When the peptide was digested by protease in a homogeneous solution, the signal-labeled segment was released from the substrate. The unreacted peptide substrates could be removed by Ni-NTA-MNP, and the released segments remained in solution to emit strong fluorescence. The method was used to determine protease of caspase-3 with a low detection limit (4 pg/mL). By changing the peptide sequence and signal reporters, the proposal could be used to develop novel homogeneous biosensors for the detection of other proteases.

With the rapid progress of artificial intelligence, various perception networks were constructed to enable Internet of Things (IoT) applications, thereby imposing formidable challenges to communication bandwidth and information security. Memristors, which exhibit powerful analog computing capabilities, emerged as a promising solution expected to address these challenges by enabling the development of the next-generation high-speed digital compressed sensing (CS) technologies for edge computing. However, the mechanisms and fundamental properties of memristors for achieving CS remain unclear, and the underlying principles for selecting different implementation methods based on various application scenarios have yet to be elucidated. A comprehensive overview of memristor-based CS techniques is currently lacking. In this article, we systematically presented CS requirements on device performance and hardware implementation. The relevant models were analyzed and discussed from the mechanism level to elaborate the memristor CS system scientifically. In addition, the method of deploying CS hardware using the powerful signal processing capabilities and unique performance of memristors was further reviewed. Subsequently, the potential of memristors in all-in-one compression and encryption was anticipated. Finally, existing challenges and future outlooks for memristor-based CS systems were discussed.

In this work, low voltage RF power capability on AlGaN/GaN and InAlN/GaN HEMTs is analyzed from the perspective of DC and pulse characteristics, for terminal applications whose operating voltage is usually in the range of 3 to 15 V. Device fabrication is performed on mature AlGaN/GaN heterojunction as well as strongly polarized InAlN/GaN heterojunction, to make a comparison of low voltage RF power capability between two devices. Although it suffers from relatively severe RF dispersion, InAlN/GaN HEMT delivers higher output power density (Pout) than its opponent, benefiting from the lower parasitic resistance and knee voltage as well as higher output current density. At 8 GHz, Pout of 1.62 W/mm and 1.10 W/mm are achieved for InAlN/GaN and AlGaN/GaN HEMT, respectively, both of which are biased at class AB operation and Vds of 9 V. However, the tremendous degradation of power added efficiency (PAE) occurs as the higher drain voltage is applied on InAlN/GaN HEMT, as the result of the severe gate leakage. What is more, a higher PAE is more necessary than Pout for terminal applications. Either InAlN/GaN HEMT or AlGaN/GaN HEMT has its own specific voltage range to deliver higher PAE. Concretely, InAlN/GaN HEMT is more suitable to applications with operating voltage not exceeding 6 V, and AlGaN/GaN HEMT is preferred for ones with relatively higher voltage, accompanied by the decent PAE as high as 62% to 66% and moderate Pout to meet the demand of various low voltage terminal applications.

Abstract Memristors based neuromorphic devices can efficiently process complex information and fundamentally overcome the bottleneck of traditional computing based on von Neumann architecture. Meanwhile, natural biomaterials have attracted significant attention for biologically integrated electronic devices due to their excellent biocompatibility, mechanical flexibility, and controllable biodegradability. Thus, biomaterial‐based memristors may have a transformative impact on bridging electronic neuromorphic systems and biological systems. However, the working voltage in biological system is low, but the operation voltages of conventional memristors are high, violating the energy‐efficient biological system. Here, high‐performance silk fibroin‐based threshold switching (TS) memristors are demonstrated, which reveal an on‐current of 1 mA, a low threshold voltage (Vth) of 0.17 V, a high selectivity of 3 × 106, and a steep turn‐on slope of

Abstract Self-supporting nanoporous InP membranes are prepared by electrochemical etching, and are then first transferred to highly reflective (> 96%) mesoporous GaN (MP-GaN) distributed Bragg reflector (DBR) or quartz substrate. By the modulation of bandgap, the nanoporous InP samples show a strong photoluminescence (PL) peak at 541.2 nm due to the quantum size effect of the nanoporous InP structure. Compared to the nanoporous InP membrane with quartz substrate, the nanoporous membrane transferred to DBR shows a twofold enhancement in PL intensity owing to the high light reflection effect of bottom DBR.

The inverse piezoelectric effect and trap effect in GaN HEMTs under the high electric field by reverse-bias step stress at cryogenic temperature (CT, 77K) have been investigated. It is found that the inverse piezoelectric effect is suppressed while the trap effect is enhanced at CT. Due to the lower tensile stress in the as-grown AlGaN barrier at CT, the amplitude of the critical voltage related to inverse piezoelectric effect increases from 75V at 300K to 100V at CT, mitigating the irreversible degradation of the devices. The inverse piezoelectric effect dominates the degradation of reverse gate leakage, which is weakened at CT. However, the devices suffer from more degradation of Id (decreases by 94.38%) and Gm,max (decreases by 95.15%) at CT in the dark, induced by the serious trap effect due to the longer emission time. UV-light-assisted stress measurements have been utilized to identify the contribution of the two mechanisms to the degradation of device characteristics at CT. The degradation of Id(Gm, max) is only 0.82% (3.31%) for the piezoelectric effect and 93.56% (91.84%) for trap effect at CT, respectively.

Clematis is a perennial ornamental vine known as the “Vine Queen” for its gorgeous floral color and rich flower shape. Clematis tientaiensis, an endangered plant, is a key protected wild plant and a rare breeding parent of Clematis because of its extremely high ornamental value. Light environment is one of the important environmental factors affecting the space distribution and the size of C. tientaiensis population. One-year-old homogenous and healthy potted C. tientaiensis plants were grown under four different light intensities (T1: 1800 ± 30/0 µmol m−2 s−1; T2: 1500 ± 30/0 µmol m−2 s−1; T3: 1200 ± 30/0 µmol m−2 s−1; T4: 900 ± 30/0 µmol m−2 s−1). This study analyzed the potential adaptive mechanism of C. tientaiensis in response to irradiance by investigating the photosynthesis, rapid light curve, chloroplast ultrastructure, Rubisco activase enzyme (RAC), Rubisco enzyme, amino acids, and gene expression under four irradiance treatments. High light caused the leaves chlorosis and yellowing, reduced the net photosynthetic rate (Pn), stomatal conductance (Gs), RAC and Rubisco enzyme activity; the quantum yield of unregulated energy dissipation [Y(NO)], and increased the content of eight amino acids content. The expression of psbA, psbB, psbC, and Psb(OEC) were down-regulated with decreasing irradiance. The results showed that C. tientaiensis plants grown under T1 (1800 ± 30 µmol m−2 s−1) irradiance were in danger of absorbing more light energy than they could use for photosynthesis, while they exhibited good adaptability to the T3 (1200 ± 30 µmol m−2 s−1) irradiance, and the PSII reaction center and Rubisco and RCA enzymes could be the key points in response to high light stress, which also emphasized the importance of appropriate light management practices for promoting the growth and population expansion of C. tientaiensis.

In this paper, Silvaco TCAD software is used to simulate the buffer traps in AlGaN/GaN high electron mobility transistors (HEMTs), and its effects on the breakdown performance and key parameters of the devices are investigated by changing the position and concentration of the acceptor traps in the buffer layer. The results show that with the increase of trap concentration, the traps capture electrons and reduce the off-state leakage current, which can improve breakdown voltage of the devices. At the same time, as the trap concentration increases, the ionized traps make a high additional electric field near the drain edge, leading to the decrease of breakdown voltage. With the combined two effects above, the breakdown voltage almost ultimately saturates. When the source-to-gate (Access-S) region in the GaN buffer layer is doped alone, the minimum and most linear leakage current for the same trap concentrations are obtained, and the additional electric field has a relatively small effect on the electric field peak near the drain as the ionized traps are furthest from drain. All these factors make the breakdown voltage increase more controllably with the Access-S region doping, and it is a more potential way to improve the breakdown performance.

Clematis tientaiensis is an ornamental plant with beautiful flowers that belongs to the Ranunculaceae family. C. tientaiensis is endemic to Zhejiang Province in China. Five different colours of the C. tientaiensis flower have been observed, and to explore the reason for this flower colour variation, transcriptome and metabolome sequencing analyses were conducted in this study. The results indicate that 32 metabolites participate in anthocyanin biosynthesis, and that 24 metabolites were differentially accumulated among the five different flower colours. The transcriptome sequencing results enabled the identification of 13,559 differentially expressed genes. Further analysis indicated that cyanidin-3-O-galactosidea and cyanidin-3-O-sophoroside promote anthocyanin accumulation in the flowers of C. tientaiensis, whereas the pelargonidin-3-O-galactoside plays a negative role in anthocyanin synthesis. In addition, a combined transcriptome and metabolome analysis showed that the WDR2 gene plays an important regulatory role in anthocyanin biosynthesis. The results of this study provide a basis for further research into the biosynthesis and regulation of anthocyanins in C. tientaiensis flowers.

This work presents the temperature-dependent characteristics of the thin-barrier Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT), p-type CuO gate HEMT, and high-k HfO2 metal–insulator–semiconductor HEMT (MIS-HEMT). As the temperature rises from 20 to 300 °C, the maximum trans-conductance of the HfO2 MIS-HEMT and CuO gate HEMT reduces by 56.9% and 43.2%, respectively. The sub-threshold swing of the CuO gate HEMT is smaller than that of the HfO2 device when the temperature reaches 300 °C. According to the C–V test results from 20 to 300 °C, the relative dielectric constant of CuO increases from 18.1 to 47.4, whereas HfO2 has a relatively stable dielectric constant. The calculation models are presented to investigate the effect of the dielectric constant on the drain current and the trans-conductance. The calculated results show that the maximum transconductance of the HfO2 MIS-HEMT and CuO gate HEMT decreases by 52.3% and 38.9%, respectively, which is in good agreement with the experimental results.

The combined effect of total ionizing dose (TID) and electrical stress is investigated on NMOSFETs. For devices bearing both radiation and electrical stress, the threshold voltage shift is smaller than those only bearing electrical stress, indicating that the combined effect alleviates the degradation of the devices. The H bond is broken during the radiation process, which reduces the participation of H atoms in the later stage of electrical stress, thereby reducing the degradation caused by electrical stress. The positive charges of the oxide layer generated by radiation neutralize part of the tunneling electrons caused by electrical stress, and consume some of the electrons that react with the H bond, resulting in weaker degradation. In addition, the positive charges in shallow trench isolation (STI) generated by radiation create parasitic leakage paths at the interfaces of STI/Si, which increase the leakage current and reduce the positive shift of the threshold voltage. The parasitic effect generated by the positive charges of STI makes the threshold voltage of the narrow-channel device degrade more, and due to the gate edge effect, the threshold voltage of short-channel devices degrades more.

Introduction: COVID-19 has overloaded worldwide medical facilities, leaving some potentially high-risk patients trapped in outpatient clinics without sufficient treatment. However, there is still a lack of a simple and effective tool to identify these patients early.Methods: A retrospective cohort study was conducted to develop an early warning model for predicting the death risk of COVID-19. Seventy-five percent of the cases were used to construct the prediction model, and the remaining 25% were used to verify the prediction model based on data immediately available on admission.Results: From March 1, 2020, to April 16, 2020, a total of 4,711 COVID-19 patients were included in our study. The average age was 63.37 ± 16.70 years, of which 1,148 (24.37%) died. Finally, age, SpO2, body temperature (T), and mean arterial pressure (MAP) were selected for constructing the model by univariate analysis, multivariate analysis, and a review of the literature. We used five common methods for constructing the model and finally found that the full model had the best specificity and higher accuracy. The area under the ROC curve (AUC), specificity, sensitivity, and accuracy of full model in train cohort were, respectively, 0.798 (0.779, 0.816), 0.804, 0.656, and 0.768, and in the validation cohort were, respectively, 0.783 (0.751, 0.815), 0.800, 0.616, and 0.755. Visualization tools of the prediction model included a nomogram and an online dynamic nomogram (https://wanghai.shinyapps.io/dynnomapp/).Conclusion: We developed a prediction model that might aid in the early identification of COVID-19 patients with a high probability of mortality on admission. However, further research is required to determine whether this tool can be applied for outpatient or home-based COVID-19 patients.

Dissolved organic matter (DOM) in sediment pore water plays a key role in lake water quality, complexation of the contaminants, biogeochemical cycles, and even climate. To better understand the vertical dynamics and characteristics of DOM among pore water profiles, we investigated concentrations, chemical structures, and benthic fluxes of DOM in plateau lake sediments via stoichiometric analysis, ultraviolet–visible (UV–vis) absorption, three-dimensional fluorescence matrix spectroscopy (EEMs), and parallel factor model (PARAFAC). The results revealed that dissolved organic carbon (DOC), concurrent with chromophoric DOM (CDOM) and fluorescent DOM (FDOM), tended to accumulate in the anaerobic deeper layers. These trends also demonstrated a good agreement with the ammonium nitrogen (NH4+-N) concentration, implying that the pathway of DOM dynamics was closely related to the redox state. The EEMs-PARAFAC model revealed that DOM in pore water mostly consisted of two terrestrial humic-like components (average contribution:> 60%) followed by microbial and tryptophan-like components, respectively. Terrestrial humic-like components were relatively stable, and their abundance was positively correlated with the FDOM level (p

Clematis is a superior perennial ornamental vine known for varied colors and shapes of its flowers. Clematis crassifolia is sensitive to high temperature, whereas Clematis cadmia has a certain temperature adaptability. Here we analyzed the potential regulatory mechanisms of C. crassifolia and C. cadmia in response to heat stress by studying the photosynthesis, antioxidant parameters, amino acids, and gene expression patterns under three temperature treatments. Heat stress caused the fading of leaves; decreased net photosynthetic rate, stomatal conductance, superoxide dismutase, and catalase activity; increased 13 kinds of amino acids content; and up-regulated the expression of seven genes, including C194329_G3, C194434_G1, and C188817_g1, etc., in C. crassifolia plants. Under the treatments of heat stress, the leaf tips of C. cadmia were wilted, and the net photosynthetic rate and soluble protein content decreased, with the increase of 12 amino acids content and the expression of c194329_g3, c194434_g1, and c195983_g1. Our results showed that C. crassifolia and C. cadmia had different physiological and molecular response mechanisms to heat stress during the ecological adaptation.

The in situ detection of the product of the oxygen evolution reaction (OER) catalyzed by cobalt phosphate (CoPi) was achieved with interdigitated array (IDA) electrodes. For this purpose, CoPi and Pt were electrodeposited on the two working electrodes of an IDA, the generator and the collector. The CoPi-catalyzed OER could then be analyzed on the IDA generator and the reaction product, O2, could be detected immediately by the closely arrayed Pt IDA collector electrode. The CoPi-Pt IDA reveals a clear O2 evolution process corresponding to the different oxidation states of the catalyst for the OER and provides information regarding the existence of higher cobalt oxidation states. The turnover frequencies are also calculated using the IDA results. In addition, continuous O2 production and detection was achieved by holding the CoPi generator at a constant higher potential with the Pt collector at a reducing potential measuring O2 from the generator. The collection efficiency is above 90%, meaning that 90% of the O2 product is measured in situ by the IDA collector. Other electrocatalytic reactions of interest could be similarly investigated both qualitatively and quantitatively using IDA electrodes operating in the generator–collector mode.

An amendment to this paper has been published and can be accessed via the original article.

Objective To investigate the prevalence, risk factors and mortality rate for acute respiratory distress syndrome (ARDS) in Chinese patients with sepsis. Methods This prospective study was based on data from consecutive patients with sepsis who attended Cangzhou Central Hospital between January 2017 and May 2019 and who developed ARDS. Multivariate logistic regression was used to identify risk factors associated independently with ARDS development. Results Of the 150 sepsis patients, 41 (27%) developed ARDS. Smoking history, presence of chronic obstructive pulmonary disease (COPD), the C-reactive protein (CRP) levels and the Acute Physiology and Chronic Health Evaluation II (APACHE II) scores were associated with developing ARDS. Moreover, combination of the four factors had an even better predictive value for risk of ARDS than each factor alone. 28-day mortality was higher in sepsis patients with ARDS compared with those without ARDS. Conclusions In Chinese patients with sepsis, ARDS is relatively common and is associated with increased mortality. Smoking, COPD, CRP levels and APACHE II scores may be useful in predicting sepsis patients who may be at risk of developing ARDS.

SFTSV is a novel phlebovirus associated with high fatality, but understanding of pathogenesis is lacking. Here the authors show defective cellular immunity, deficient antibody production and defunct humoral immunity is associated with fatal infection in human cases of infection.