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This study aimed to evaluate the effect of the number of lactations and litter size on the chemical composition, immunoglobulins, and cytokines of goat colostrum. The experiment was conducted at the Animal Research Base, Mianyang Academy of Agricultural Sciences, from February to March 2021. After delivery, 48 colostrum samples were obtained every 24 h by manual milking from both udders. The contents of colostrum proteins, IgA, and IgM increased markedly up to 48 h postpartum, reaching 250 and 1250 ��g/mL, respectively (p p p p

The efficiency of AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) is limited by the high absorption issue of the p-GaN contact layer or poor contact properties of the transparent p-AlGaN contact layer. Enhancement of the light output efficiency and thermal stability of DUV LEDs with an emission wavelength of 272 nm was investigated in this work. Ag nanodots on an 8-nm p-GaN cap layer were used to form ohmic contact, and Al and Mg reflective mirrors were employed to enhance the light output power (LOP) of DUV LEDs. However, serious deterioration of LOP occurred after the high-temperature process for the LEDs with Al and Mg reflective mirrors, which can be attributed to the damage to the ohmic contact properties. A Ti barrier layer was inserted between the Ag/p-GaN and Al layers to prevent the degeneration of ohmic contact. The wall-plug efficiency (WPE) of DUV LEDs fabricated by the Ag-nanodot/Ti/Al electrode is 1.38 times that of LEDs fabricated by adopting a thick Ag layer/Ti/Al at 10 mA after a high-temperature process. The Ag-nanodot/Ti/Al electrode on thin p-GaN is a reliable technology to improve the WPE of DUV LEDs. The experimental and simulated results show that the ohmic contact is important for the hole-injection efficiency of the DUV LEDs when p-GaN is thin, and a slight increase in the contact barrier height will decrease the WPE drastically. The results highlighted the importance of thermally stable ohmic contacts to achieve high-efficiency DUV LEDs and demonstrated a feasible route for improving the LOP of DUV LEDs with a thin p-GaN cap layer and stable reflective electrodes.

Semi-polar micro-LEDs have gain increasing interests due to the advantages of polarization control and quantum efficiency improvement. In this work, a novel semi-polar (20–21)-plane micro-LEDs array has been designed and manufactured. In comparison with c-plane micro-LEDs, semi-polar micro-LEDs indicate better electrical and optical performance. The relative EQE of semi-polar micro-LEDs remains at 62% under the injected current density of 775.6 A/cm2, which indicates a reduced efficiency droop due to less polarization in MQWs. It has been further proved by a significant reduction of 55% in emission peak blue-shift under the injected current density from 11.1 A/cm2 to 775.6 A/cm2. In addition, the carrier recombination dynamics and spatial light distribution of semi-polar micro-LEDs with different pixel sizes have been studied. Fast recombination lifetime in smaller size semi-polar micro-LEDs indicates a promising way to be used as a high modulation bandwidth light source. Stable and uniform light distribution in a wider range of spatial azimuths further supports for the semi-polar micro-LEDs as a strong candidate for the applications of high-resolution display and high-speed visible light communication.

The electrical and optical properties of Ag/p–GaN contacts have been investigated as a function of the annealing temperature, oxygen concentration, and annealing time. Specific contact resistance (ρc) values as low as 1.2 × 10–4 Ω·cm2 were obtained from the Ag/p–GaN contact annealed at 400 °C for 60 s in ambient O2/N2 (1:10). We found that the participation of oxygen improves the formation of ohmic contacts. Oxygen might remove the H in Mg–H complexes to activate the Mg acceptors and enhance Ga out-diffusion to form an Ag–Ga solid solution. We also found that the reflectivity of the Ag layer decreases with increasing annealing temperature in the O2-containing ambient environment. Thus, an optimal annealing condition of Ag/p–GaN for blue and green LEDs is suggested based on these results. We also used the suggested annealing conditions to form ohmic contacts on DUV LEDs and achieved good electrical performance. The forward voltages of UVC LEDs fabricated with annealed Ag contacts were 6.60 V (7.66 V) at a 40 mA (100 mA) injection current.

Hybrid white light emitting diodes (LEDs) have been developed utilizing micro-LEDs radiatively pumping down-conversion phosphor materials. The cyan InGaN/GaN multiple quantum wells LEDs with 95 μm in square are fabricated into 4 × 4 pixels as one unit in 4 in wafer by photolithography and inductively coupled plasma etching techniques. The relatively low turn on voltage and low leakage of cyan micro-LEDs indicate good electrical performance. A significant reduction in the efficiency droop characteristics of cyan micro-LED has been observed in comparison with that of standard green LED. Finally, based on a systemic optimization for white emission indexes, high-quality hybrid white light emission has been demonstrated by the combination of blue and cyan micro-LEDs with two types of phosphors, which have a high color rendering index up to 87 at the correlated color temperatures of 6500 K. It also demonstrates a way to adjust the color component by modifying the output power of cyan micro-LED in hybrid LED, showing a promising candidate in a large range of applications including micro-displays, bioinstrumentation, photolithography, and lab-on-chip systems in the future.

Junction temperature (Tj) and current have important effects on light-emitting diode (LED) properties. Therefore, the electroluminescence (EL) spectra of blue and green LEDs were investigated in a Tj range of 120&ndash, 373 K and in a current range of 80&ndash, 240 mA based on accurate real-time measurements of Tj using an LED with a built-in sensor unit. Two maxima of the emission peak energy with changing Tj were observed for the green LED, while the blue LED showed one maximum. This was explained by the transition between the donor-bound excitons (DX) and free excitons A (FXA) in the green LED. At low temperatures, the emission peak energy, full width at half maximum (FWHM), and radiation power of the green LED increase rapidly with increasing current, while those of the blue LED increase slightly. This is because when the strong spatial potential fluctuation and low exciton mobility in the green LED is exhibited, with the current increasing, more bonded excitons are found in different potential valleys. With a shallower potential valley and higher exciton mobility, excitons are mostly bound around the potential minima. The higher threshold voltage of the LEDs at low temperatures may be due to the combined effects of the band gap, dynamic resistance, piezoelectric polarization, and electron-blocking layer (EBL).

We investigate the electrical and optical properties of graphene–Ag nanodot compounds as transparent conductive layers (TCLs) for gallium nitride (GaN)-based ultraviolet light-emitting diodes (UV-LEDs) with different Ag thicknesses. As the thickness of Ag increases from 2 to 5 nm on the 365-nm UV-LEDs, the transmittance decreases from 82.5% to 65.2% and ohmic contact resistance decreases from 0.2 to ${1.3}{\times} {10}^{-5} \Omega \text {cm}^{2}$ . At a wavelength of about 320 nm, the TCLs exhibit high transparency, which is also confirmed by the simulation data of the finite-difference time-domain solution. The simulation and experimental results suggest that Ag with a thickness of 5 nm can potentially obtain both low ohmic contact resistance and high transmittance at the wavelength of about 320 nm, which is important for medical applications. We also study the nanodot migration and coalescence mechanism of 2- and 5-nm Ag samples by scanning electron microscopy, as well as the influence of the existence of graphene. The 5-nm Ag sample has smaller and denser Ag nanodots and thus exhibits better electrical properties. In addition, the Ag nanodots after the second annealing procedure with graphene covering are larger than those without graphene covering.

Recently, the emerging inorganic perovskites CsPbX 3 (X = Br, I) have received great attention in the photovoltaic community due to their excellent photoelectric property and good thermal stability. However, most of the reported CsPbX 3 films are fabricated by the uncontrolled solution method, and it is challenging to generate pinhole-free Br-rich films due to the over-rapid liquid-phase reaction feature and the solubility limitation of bromide. Herein, we develop a sequential chemical vapor deposition (CVD) method to fabricate colorful, band-gap tunable, and stable CsPb(I x Br 1-x ) 3 films. First, air-stable CsPbBr 3 precursor films are fabricated via a Br 2 -assisted CVD process. Second, a series of CsPb(I x Br 1-x ) 3 (x = 0, 0.2, 0.33, 0.5, 0.67, 0.8, 1) high-quality films with consistent compositions are then obtained by another MAI/MABr-assisted CVD process. Experimental results show that all of the CsPb(I x Br 1-x ) 3 films have the same cubic structure and (100) preferred orientation. With the increase of MAI component, the colors of films darken gradually, the main diffraction peaks at (100) and (200) planes shift to small angle, their optical bandgaps monotonously decrease from 2.34 eV to 1.67 eV, the grains of films grow up, and the porous films become more compact. Strikingly, it is found that CsPb(I x Br 1-x ) 3 films become very stable in air ambient when x is less or equal to 0.5. Therefore, we first employ a cost-effective CVD technology to modulate the anion compositions of CsPbX 3 inorganic perovskite films, which shows a high potential for the photovoltaic applications such as highly efficient tandem perovskite solar cells (PSCs) and colorful smart photovoltaic windows.

Nowadays, inorganic perovskites such as CsPbI3 and CsPbBr3 with excellent photoelectric property and superior thermal stability have triggered strong interest in the photovoltaic community. However, all of the inorganic perovskite absorbers reported in literatures are fabricated by the complicated solution process. Meanwhile, CsPbI3 exists serious structural phase-transition; while stable CsPbBr3 suffers solubility limitation of bromide in conventional solution route. Herein, we develop a smart Br2-vapor-assisted chemical vapor deposition (CVD) method to realize the fast anion-exchange from CsPbI3 to CsPbBr3. With the substitution of small Br− anions, the undesirable phase-transition of CsPbI3 is heavily restrained and its structural stability is tremendously enhanced; and thus here we open a new avenue to solve the solubility issue of bromide. Consequently, CsPbBr3 all-inorganic perovskite solar cells (PSCs) with Carbon top electrode are first achieved by cost-effective CVD technology, showing a relatively high power conversion efficiency (PCE) of 5.38%. The charge transport mechanism of CsPbBr3 PSCs is correspondingly elucidated in-depth. We find that the interface of TiO2 and CsPbBr3 might be the root cause of hysteresis phenomenon, while another interface between Carbon and CsPbBr3 is not a rectifying contact but only increases the ohmic resistance of electrode. Moreover, our PSCs demonstrate a good long-term stability and give ∼90% of initial efficiencies after exposure to air for 21 days.

This paper presents a novel nonlinear control approach for medium-density fiberboard continuous hot pressing electro-hydraulic servo system (EHSS). The EHSS is subject to input saturation and unknown external disturbance. The approach is developed in the framework of the prescribed performance control design. The transient and steady behaviors are both considered by virtue of an appropriate performance function. A new robust adaptive neural control algorithm is then developed by introducing a dynamic surface control scheme. Moreover, the compensation control is designed for the nonlinear term arising from the input saturation. It is shown with the Lyapunov stability analysis that all the signals in the closed-loop system are semi-globally uniformly ultimately bounded. In addition, the system tracking performance regarding transient and steady-state behaviors is guaranteed effectively with input saturation via the designed control approach. Finally, numerical simulation results are presented to authenticate and validate the effectiveness of the proposed control scheme.

We numerically investigated the optical/electrical characteristics of blue light-emitting-diodes (LEDs) and developed some optimization strategies. Our aim is to increase the optical performance of LEDs at low current density (0.02–2 A cm−2) for micro-LEDs used in display applications. First, we investigated the effects of quantum well (QW) number in blue In0.225Ga0.775N/In0.10Ga0.90N LEDs. We found that at low current density LEDs with lower QW number have much higher internal quantum efficiency (IQE) than those with higher QW number. Second, we also numerically investigated the effects of the electron blocking layer, n-side quantum barrier (QB) doping concentration, QB material and QW width with single quantum well (SQW) structure. For SQW LEDs at low current density, the electron injection efficiency was nearly one. In terms of the QB doping concentration, we found that an appropriate n-side QB doping can ensure Shockley-Read-Hall recombination appropriately equal Auger recombination, which ultimately results in high IQE. For QB material, we choose In0.05Ga0.95N as QB material to achieve both high IQE and low forward voltage. Regarding the QW width, we found that although LEDs with wide QW had high IQE, there were also two peaks in the electroluminescence (EL) spectrum, thus 3 nm was used as an optimal QW width. The original 5-QW structure showed a lower IQE range from 50 to 80% at the current density range from 0.01 to 2 A cm−2 and a forward voltage of 3.06 V at 1 A cm−2. In contrast, our optimized LED structure achieved an IQE of 92.3% at the current density range from 0.01 to 2 A cm−2 and a forward voltage of 2.72 V at 1 A/cm2.

We study the design of index assignment based multiple description quantizers for multiple-antenna systems with slow Rayleigh fading. A time-interleaver is employed at the transmitter to provide independent channel instances for the multiple descriptions, and a maximum a posteriori (MAP) detector is employed at the receiver to jointly decode the multiple descriptions. The concatenation of index assignment, binary phase-shift keying modulators, space-time orthogonal block coder, multiple-antenna channel, and MAP detector is modeled as a discrete memoryless channel. We optimize multiple description vector quantizers using an upper bound of the channel transition probability achieved by the MAP detector. The proposed scheme of combining multiple description coding and space-time orthogonal block coding is shown to be superior to each individual coding scheme.

This paper presents a method with an accurate control of threshold voltages (Vth) of AlGaN/GaN high-electron mobility transistors (HEMTs) using a fluoride-based plasma treatment. Using this method, the Vth of AlGaN/GaN HEMTs can be continuously shifted from -4 V in a conventional depletion-mode (D-mode) AlGaN/GaN HEMT to 0.9 V in an enhancement-mode AlGaN/GaN HEMT. It was found that the plasma-induced damages result in a mobility degradation of two-dimensional electron gas. The damages can be repaired and the mobility can be recovered by a post-gate annealing step at 400 degC. At the same time, the shift in Vth shows a good thermal stability and is not affected by the post-gate annealing. The enhancement-mode HEMTs show a performance (transconductance, cutoff frequencies) comparable to the D-mode HEMTs. Experimental results confirm that the threshold-voltage shift originates from the incorporation of F ions in the AlGaN barrier. In addition, the fluoride-based plasma treatment was also found to be effective in lowering the gate-leakage current, in both forward and reverse bias regions. A physical model of the threshold voltage is proposed to explain the effects of the fluoride-based plasma treatment on AlGaN/GaN HEMTs

We present the design, fabrication, and characterization of AlGaN-GaN double-channel HEMTs. Two carrier channels are formed in an AlGaN-GaN-AlGaN-GaN multilayer structure grown on a sapphire substrate. Polarization field in the lower AlGaN layer fosters formation of a second carrier channel at the lower AlGaN-GaN interface, without creating any parasitic conduction path in the AlGaN barrier layer. Unambiguous double-channel behaviors are observed at both dc and RF. Bias dependent RF small-signal characterization and parameter extraction were performed. Gain compression at a high current level was attributed to electron velocity degradation induced by interface scattering. Dynamic IV measurement was carried out to analyze large-signal behaviors of the double-channel high-electron mobility transistors. It was found that current collapse mainly occurs in the channel closer to device surface, while the lower channel suffers minimal current collapse, suggesting that trapping/detrapping of surface states is mainly responsible for current collapse. This argument is supported by RF large-signal measurement results.

The correlation between the resistivity of an undoped GaN/Al2O3 interfacial layer and in-situ reflectance spectrum in metalorganic chemical vapor deposition and the mechanism of this correlation were investigated. The first minimum reflectance during the initial high-temperature GaN growth was found to be a good indicator of the resistivity of the GaN buffer. The background electron concentration and mobility were both higher in the samples with higher indicative reflectance at that point. The resistivity of the GaN buffer layer was predominantly determined by an ∼0.25-µm-thick layer near the GaN/Al2O3 interface. Atomic force microscope (AFM) and high-resolution x-ray diffraction (HRXRD) results showed that the samples with higher indicative reflectance had smaller sized but higher density nuclei before the high-temperature GaN growth and lower screw threading dislocation (TD) density in the initially grown GaN. The difference in the background electron concentration and mobility of the interfacial layer was related to the relatively higher concentration of the O and Al diffused from Al2O3, which is also dependent on the size and density of the nuclei. These differences were found not to affect the structural and electrical properties or the surface morphology of AlGaN/GaN high electron-mobility transistors (HEMTs, except for the buffer conduction) when the GaN buffer is thick enough (e.g., ∼2.5 µm).

Structural properties of epitaxially laterally overgrown (ELO) GaN on patterned GaN ‘substrates’ by hydride vapor phase epitaxy (HVPE) have been investigated. The epitaxially lateral overgrowth of GaN on SiO2 areas is realized and a planar ELO GaN film is obtained. Scanning electron microscope, transmission electron microscope (TEM) and atomic force microscope (AFM) are used to study the structure and surface morphology of the ELO GaN materials. AFM images indicate that no observable step termination is detected over a 4 μm2 area in the ELO region. TEM observations indicate that the dislocation density is very low in the ELO region. No void at the coalescence interface is observed. Lattice bending as high as 3.3° is observed and attributed to pileup of threading dislocations coming from the underlying GaN “seeding layer” and tilting horizontally and quenching at the coalescence interface.

We consider multiple description communication over Rayleigh fading channels with binary phase-shift keying (BPSK) modulators at the transmitter and soft-decision detectors at the receiver. The multiple-channel optimized quantizer design (MCOQD) method, introduced in Y. Zhou et al., (2004) for multiple discrete memoryless channels, is extended to multiple Rayleigh fading channels. The decision thresholds of the soft-decision detectors are optimized to achieve minimum end-to-end distortion. Simulation results show that MCOQD provides more robust quantizers than multiple description scalar quantizers V. Vaishampayan (1993) over Rayleigh fading channels, when both the encoder and decoder are matched to channel statistics and when only the decoder is matched to channel statistics.

Transmission electron microscopy (TEM), x-ray diffraction (XRD), photoluminescence (PL) and Raman scattering measurements were applied to study the correlation between the microstructure and physical properties of the GaN films grown by light radiation heating metalorganic chemical vapor deposition (LRH-MOCVD), using GaN buffer layer on sapphire substrates. When the density of the threading dislocation (TD) increases about one order of magnitude, the yellow luminescence (YL) intensity is strengthened from negligible to two orders of magnitude higher than the band edge emission intensity. The full width of half maximum (FWHM) of the GaN (0002) peak of the XRD rocking curve was widened from 11 min to 15 min, and in Raman spectra, the width of E2 mode is broadened from 5 cm-1 to 7 cm-1. A “zippers” structure at the interface of GaN/sapphire was observed by high-resolution electron microscope (HREM). Furthermore the origins of TD and relationship between physical properties and microstructures combining the growth conditions are discussed.

InGaN based light-emitting diodes (LEDs) with undoped GaN interlayer of variant thicknesses grown by metal-organic chemical vapor deposition technique have been investigated. It was found that the thickness of undoped GaN interlayers affected LEDs' performance greatly. The LED with 50 nm undoped GaN interlayer showed higher light output power and lower reverse-leakage current compared with the others at 20 mA. Based on electrical and optical characteristics analysis and numerical simulation, these improvements are mainly attributed to the improvement of the quality of depletion region by inserting an undoped GaN layer, as well as reduction of the Shockley-Read-Hall recombination in InGaN/GaN MQWs.