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• MAPbCl 3 and amorphous Ga 2 O 3 formed a hybrid structure for the first time. • The responsivity enhanced nearly 70 times by inserting the amorphous Ga 2 O 3 layer. • The MAPbCl 3 /amorphous Ga 2 O 3 photodetector is sensitive with high-detectivity. • The performance of polycrystalline detector is comparable to single crystal device. • The detector is self-powered and realizes accurate detection of UVA radiation. [Display omitted] UVA radiation can survive from the absorption of atmospheric layer and reaches the terrestrial surface, which is harmful to human eyes, blood vessels, and elastic fibers. It is meaningful to detect the UVA radiation precisely. A sensitive, high-detectivity and self-powered UVA detector based on polycrystalline CH 3 NH 3 PbCl 3 /amorphous Ga 2 O 3 hybrid structure is presented in this work. Under zero bias, the rise/decay time of the photodetector are 56/67 ms, and the detectivity reaches up to 5.4 × 1010 Jones. The performance is even superior to most of the reported devices based on CH 3 NH 3 PbCl 3 single crystal. The heterojunction between amorphous Ga 2 O 3 and CH 3 NH 3 PbCl 3 accelerates the separation of photon-generated carrier and effectively reduces the recombination. In addition, the high resistivity and low surface roughness of the amorphous Ga 2 O 3 layer also contribute to the improvement of device parameters. This study offers new insights to improve the polycrystalline MAPbCl 3 devices by ultra-wide bandgap amorphous semiconductors. [ABSTRACT FROM AUTHOR]