Search

The development trend of modern electronics and optoelectronics is constantly moving towards highly integrated, comprehensive, and miniaturized devices. Vertical configuration provides an easy means to achieve higher integration density than traditional planar configuration, and possess higher carrier generation capabilities and transfer speed, which can further enhance the performance of optoelectronic devices. This technology holds tremendous potential for designing the next generation of electronic/optoelectronic devices. In this work, we developed a vertical heterojunction photodetector, which combines narrow-bandgap 2D topological insulator Bi 2 Se 3 , ultra-wide-bandgap amorphous Ga 2 O 3 , and high-performance p-Si substrate, achieving broad-spectrum detection from 254 to 1000 nm and significantly shortened response time due to the advantage of carrier vertical transmission. The response time of the device is less than 50 ms under illumination with different wavelengths. Moreover, the device exhibits self-powered characteristics, with maximum responsivity and detectivity of 0.175 mA/W and 1.58 × 1010 Jones, respectively, under 365 nm light irradiation at zero bias. A switch ratio as high as 10 3 is demonstrated under 365 and 470 nm illumination, highlighting the high performance of device. Additionally, the device displays excellent stability and imaging capability. Our research provides a promising and instructive prospect for the practical application of vertical broadband self-powered heterojunction PDs in a wider range of fields. • A vertical self-powered Bi 2 Se 3 /a-Ga 2 O 3 /p-Si heterojunction PD was achieved. • The device showed broadband response (254–1000 nm) and imaging ability. • Switch ratio as high as 103 under 365 and 470 nm illumination was presented. [ABSTRACT FROM AUTHOR]