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We perform Raman spectroscopy studies on $\alpha$-RuCl$_3$ at room temperature to explore its phase transitions of magnetism and chemical bonding under pressures. The Raman measurements resolve two critical pressures, about $p_1=1.1$~GPa and $p_2=1.7$~GPa, involving very different intertwining behaviors between the structural and magnetic excitations. With increasing pressures, a stacking order phase transition of $\alpha$-RuCl$_3$ layers develops at $p_1=1.1$~GPa, indicated by the new Raman phonon modes and the modest Raman magnetic susceptibility adjustment. The abnormal softening and splitting of the Ru in-plane Raman mode provide direct evidence of the in-plane dimerization of the Ru-Ru bonds at $p_2=1.7$~GPa. The Raman susceptibility is greatly enhanced with pressure increasing and sharply suppressed after the dimerization. We propose that the system undergoes Mott collapse at $p_2=1.7$~GPa and turns into a dimerized correlated band insulator. Our studies demonstrate competitions between Kitaev physics, magnetism, and chemical bondings in Kitaev compounds., Comment: 7 pages, 4 figures

Motivated by the triumph and limitation of graphene for electronic applications, atomically thin layers of group VI transition metal dichalcogenides are attracting extensive interest as a class of graphene-like semiconductors with a desired band-gap in the visible frequency range. The monolayers feature a valence band spin splitting with opposite sign in the two valleys located at corners of 1st Brillouin zone. This spin-valley coupling, particularly pronounced in tungsten dichalcogenides, can benefit potential spintronics and valleytronics with the important consequences of spin-valley interplay and the suppression of spin and valley relaxations. Here we report the first optical studies of WS2 and WSe2 monolayers and multilayers. The efficiency of second harmonic generation shows a dramatic even-odd oscillation with the number of layers, consistent with the presence (absence) of inversion symmetry in even-layer (odd-layer). Photoluminescence (PL) measurements show the crossover from an indirect band gap semiconductor at mutilayers to a direct-gap one at monolayers. The PL spectra and first-principle calculations consistently reveal a spin-valley coupling of 0.4 eV which suppresses interlayer hopping and manifests as a thickness independent splitting pattern at valence band edge near K points. This giant spin-valley coupling, together with the valley dependent physical properties, may lead to rich possibilities for manipulating spin and valley degrees of freedom in these atomically thin 2D materials.

The knowledge of electron g factor is essential for spin manipulation in the field of spintronics and quantum computing. While there exist technical difficulties in determining the sign of g factor in semiconductors by the established magneto-optical spectroscopic methods. We develop a time resolved Kerr rotation technique to precisely measure the sign and the amplitude of electron g factor in semiconductors.

We report a measurement on quantum capacitance of individual semiconducting and small band gap SWNTs. The observed quantum capacitance is remarkably smaller than that originating from density of states and it implies a strong electron correlation in SWNTs.