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All-inorganic metal halide perovskite is considered as one of the most promising perovskite materials for photodetectors, because of its remarkable optoelectronic characteristics and stability. Whereas, it remains challenge to achieve both excellent photodetection performance and stability due to the multitudes of defects in perovskite films. Herein, an interface engineering based on surface passivation strategy to achieve high-quality CsPbBr 3 perovskite films by introducing thioacetamide (C 2 H 5 NS, abbreviated as TAA) as interface materials is reported. The interaction between TAA and perovskite passivates the uncoordinated Pb2+ on the surface of CsPbBr 3 film, suppress carrier non-recombination and accelerates carriers transfer. The self-powered photodetector based on the passivated CsPbBr 3 film prefers the maximum responsivity of 0.26 A W−1 and detectivity of 8.39 × 1012 Jones under 520 nm irradiation. In addition, the optimized photodetector exhibits excellent stability and maintains more than 98% of its initial photocurrent when operating over 8 h. This work demonstrates an alternative approach for the preparation of improved performance in CsPbBr 3 perovskite photodetectors and associated photoelectric devices. [Display omitted] • Introducing thioacetamide into the perovskite device as interface layer. • The device is self-powered, high-detectivity and rapidly detection to radiation. • The device achieved a champion responsivity of 0.26 A/W with excellent stability. [ABSTRACT FROM AUTHOR]