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Gallium-nitride-field-effect transistors (GaN-FETs) are promising switching devices with fast switching capability. However, they commonly have low gate threshold voltage, suffering from susceptibility to the false triggering. Particularly, the oscillatory false triggering, i.e., a self-sustaining repetitive false triggering, can occur after a fast switching, which is a severe obstacle for industrial applications. The purpose of this paper is to elucidate the design instruction for preventing this phenomenon. The oscillatory false triggering is known to be caused by the parasitic oscillator circuit formed of a GaN-FET, its parasitic capacitance and the parasitic inductance of the wiring. This paper analyzed the nonoscillatory condition of this oscillator. The result revealed an appropriate ratio between the gate-drain capacitance and the common-source inductance is a key to prevent the oscillatory false triggering. Experiment successfully verified this analysis result, supporting the effectiveness of the appropriate design of this ratio for preventing the oscillatory false triggering. [ABSTRACT FROM AUTHOR]

Recent progress of widebandgap semiconductor switching devices enabled extremely high-frequency operation of power converters owing to their ultrafast switching capability. Fast switching may cause large switching noise at the common source inductance, which may increase the switching loss and lead to false triggering. Therefore, measurement of the common source inductance is often intensely required in practical design of fast switching power converters. However, measurement of the common source inductance is difficult, because 1) the wiring path hidden beneath the molded package significantly contributes to this inductance, 2) the mutual inductance between the gating circuit and the power circuit also contributes to this inductance, and 3) this inductance cannot be defined as the stray inductance of a loop wiring path. These difficulties are addressed in this paper by proposing a novel measurement method of the common source inductance. The proposed method is applicable to already-mounted power circuits. In addition, the proposed method offers a straightforward measurement procedure with common instruments, such as a signal generator, an oscilloscope, and voltage and current probes. Along with the measurement principle, this paper also presents an experiment to evaluate the proposed method. [ABSTRACT FROM PUBLISHER]

It is quite often to utilize the transformer leakage inductance in the resonant tank of the LLC resonant converter to allow for a drastic reduction in the converter cost, weight, size, and volume. The effects of the secondary leakage inductance on the operation of the LLC resonant converter are not well discussed in the relevant literature, and it is the purpose of this paper to give an insight into these effects. The contribution of this paper lies in the following: first, highlighting that it is not always an accurate assumption to consider that the values of the primary and secondary leakage inductance are identical, specifically in asymmetric magnetic core structures. Second, it has been disclosed that the well-known coupling factor (k12) cannot properly express the unequalized leakage inductance distribution in the proposed asymmetric transformer. Therefore, the authors bring the primary coupling factor (k1) and secondary coupling factor (k2) into practice to appropriately express the unequalized leakage distribution on the primary and secondary windings, which can be controlled by the allocation of the relevant winding with respect to the air gap, utilizing the noise absorber, and changing the distance between the winding. Several transformer prototypes had been built and experimentally tested to validate these hypotheses. Third, it has been observed that the transformer voltage gain and efficiency can be improved when the transformer leakage inductance is concentrated on the secondary side to avoid the voltage drop inflicted by the relatively large value of the magnetizing current $(i_{m})$ , especially at the light load condition. Fourth, it has been reported that in a transformer structure with a concentrated value of leakage on the secondary side would decrease the resonant tank input impedance, vertically widen the voltage–gain curve of the converter, and eventually increase the frequency control bandwidth with respect to the load variation. Transformer prototypes had been constructed and tested in a 390 V/12 V–220 W LLC resonant converter to evaluate the proposed analysis. [ABSTRACT FROM AUTHOR]