1. Application of contactless electroreflectance to study the epi readiness of m-plane GaN substrates obtained by ammonothermal method.
- Author
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Kudrawiec, R., Kucharski, R., Rudzinski, M., Polish_hook, M., Misiewicz, J., Strupinski, W., Doradzinski, R., and Dwilinski, R.
- Subjects
GALLIUM nitride ,SEMICONDUCTOR wafers ,CRYSTAL growth ,REFLECTANCE spectroscopy ,BAND gaps ,SURFACE analysis ,GRINDING & polishing - Abstract
The authors have applied contactless electroreflectance (CER) spectroscopy to study the epi readiness of m-plane GaN substrates obtained by the ammonothermal method. It has been clearly observed that the CER resonance, which is related to the energy gap transition, appears for samples with a well-polished surface. The sharpness of this resonance is directly related to the surface quality. The broadening of energy gap transition can be used as a parameter to quantify the surface quality. For samples polished with optimal conditions, this broadening (γ
pol ) is close to the broadening observed for the cleaved GaN surface (γclev ) with m-plane orientation (150-190 vs 135 meV). The quality of the polishing process can be evaluated by analyzing the γclev /γpol ratio, where γclev /γpol =1 corresponds to an excellent polishing process. In the authors' case, this ratio has been determined to be close to 1 for well-polished samples. [ABSTRACT FROM AUTHOR]- Published
- 2010
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