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Conjugated polymers (CPs) offer the potential for sustainable semiconductor devices due to their low cost and inherent molecular self-assembly. Enhanced crystallinity and molecular orientation in thin films of solution-processable CPs have significantly improved organic electronic device performance. In this work, three methods, namely spin coating, dip coating, and unidirectional floating-film transfer method (UFTM), were utilized with their parametric optimization for fabricating RR-P3HT films. These films were then utilized for their characterization via optical and microstructural analysis to elucidate dominant roles of molecular orientation and crystallinity in controlling charge transport in organic field-effect transistors (OFETs). OFETs fabricated by RR-P3HT thin films using spin coating and dip coating displayed field-effect mobility (μ) of 8.0 × 10−4 cm2V−1s−1 and 1.3 × 10−3 cm2V−1s−1, respectively. This two-time enhancement in µ for dip-coated films was attributed to its enhanced crystallinity. Interestingly, UFTM film-based OFETs demonstrated μ of 7.0 × 10−2 cm2V−1s−1, >100 times increment as compared to its spin-coated counterpart. This superior device performance is attributed to the synergistic influence of higher crystallinity and molecular orientation. Since the crystallinity of dip-coated and UFTM-thin films are similar, ~50 times improved µ of UFTM thin films, this suggests a dominant role of molecular orientation as compared to crystallinity in controlling the charge transport.

BN50/NiO50 and Au-loaded BN50/NiO50 nanocomposite films were separately fabricated on the glass substrates for carrier transport and photoconductivity properties. X-ray diffraction pattern of the films show the hexagonal structure of BN and presence of defect states by Nelson Riley factor analysis. Morphological images show spherical shaped particles with highly porous structure. The incorporation of NiO may hindered growth of BN layers and resulted in spherical particles. Temperature-dependent conductivity describes semiconductor transport behaviour for deposited nanocomposite films. Thermal activation conduction with low activation energy (∼0.308 eV) may be responsible for the resulting conductivity. Further, the light intensity dependent photoelectrical properties of BN50/NiO50 and Au-loaded BN50/NiO50 nanocomposites have been explored. The effect of Au nanoparticles loading on enhanced photo-conductivities (∼22% increase) than bare nanocomposite film has been elaborated by proposed mechanism. This study provided the insightful information for carrier transport and photoconductivity of BN-based nanocomposites.

The sol-gel spin coating method was used for the preparation of the Zinc Oxide which was coated over polymer, transparent, and glass translucent substrates and characterized with the help of a UV-Vis Spectroscope. The wavelength bandgap of those samples was found to be 296nm, 310.5nm, and 330nm respectively. The actual band gap of ZnO is 388nm. Similarly, their optical bandgap energy calculated by the Tauc Plot method were 3.641eV, 3.385eV, and 3.495 eV respectively. The transparent polymer slide has the lowest wavelength bandgap and the translucent glass slide has the highest. Further, the bandgap’s value differs from its actual value to the difference in the absorption process due to the presence of the substrate. These results suggest that the choice of substrate can significantly impact the optical properties and performance of the zinc oxide thin film. This result can be applied in developing and optimizing zinc oxide thin films for various purposes, such as in solar cells, sensors, and optoelectronics. By carefully selecting the substrate, it may be possible to tailor the bandgap energy and other optical properties of the thin film to better suit the specific application.

Realizing stress-free inorganic epitaxial films on weakly bonding substrates is of importance for applications that require film transfer onto surfaces that do not seed epitaxy. Film-substrate bonding is usually weakened by harnessing natural van der Waals layers (e.g., graphene) on substrate surfaces, but this is difficult to achieve in non-layered materials. Here, we demonstrate van der Waals epitaxy of stress-free films of a non-layered material VO2 on mica. The films exhibit out-of-plane 010 texture with three in-plane orientations inherited from the crystallographic domains of the substrate. The lattice parameters are invariant with film thickness, indicating weak film-substrate bonding and complete interfacial stress relaxation. The out-of-plane domain size scales monotonically with film thickness, but the in-plane domain size exhibits a minimum, indicating that the nucleation of large in-plane domains supports subsequent island growth. Complementary ab initio investigations suggest that VO2 nucleation and van der Waals epitaxy involves subtle polarization effects around, and the active participation of, surface potassium atoms on the mica surface. The VO2 films show a narrow domain-size-sensitive electrical-conductivity-temperature hysteresis. These results offer promise for tuning the properties of stress-free van der Waals epitaxial films of non-layered materials such as VO2 through microstructure control.

Abstract The increasing demand for high‐performance piezoelectric materials and toxicity and thermal stability issues of the widely used lead zirconate titanates (PZT) have spurred a search for better alternatives in electronic devices. In comparison to PZT, group III nitrides such as aluminum nitride (AlN), are only weakly piezoelectric, but doping AlN with scandium (Sc) improves the piezoelectric response by nearly 500%. Relative to PZT, doped‐AlN piezoelectric materials are advantageous because they are far more compatible with complementary metal–oxide–semiconductor (CMOS) materials, and they maintain both piezoelectric and thermodynamic stability up to very high temperatures. Unfortunately, rare‐earth metals are notoriously expensive, and fabricating stable films with rare‐earth dopants is also challenging, limiting their use in industrial applications. In this work, ab initio calculations are combined with targeted fabrication and experimentation to identify alternative earth‐abundant dopants for AlN from the periodic table d‐block. Amongst the 23 elements screened, it is found that group IVB metals, titanium, zirconium, and hafnium induce large piezoelectric enhancements comparable to Sc. This improvement is traced to shifts in the atomic sublattice structure and changes in the local charge states. In demonstrating a highly accessible and affordable path for technological adaptation of AlN‐based piezoelectrics, this work provides the foundation for sustainable, next‐generation electronics.

Abstract Actinide materials have various applications that range from nuclear energy to quantum computing. Most current efforts have focused on bulk actinide materials. Tuning functional properties by using strain engineering in epitaxial thin films is largely lacking. Using uranium dioxide (UO2) as a model system, in this work, the authors explore strain engineering in actinide epitaxial thin films and investigate the origin of induced ferromagnetism in an antiferromagnet UO2. It is found that UO2+x thin films are hypostoichiometric (x0) with in‐plane compressive strain. Different from strain engineering in non‐actinide oxide thin films, the epitaxial strain in UO2 is accommodated by point defects such as vacancies and interstitials due to the low formation energy. Both epitaxial strain and strain relaxation induced point defects such as oxygen/uranium vacancies and oxygen/uranium interstitials can distort magnetic structure and result in magnetic moments. This work reveals the correlation among strain, point defects and ferromagnetism in strain engineered UO2+x thin films and the results offer new opportunities to understand the influence of coupled order parameters on the emergent properties of many other actinide thin films.

Abstract A variety of mechanisms are reported to play critical roles in contributing to the high carrier/electron mobility in oxide/SrTiO3 (STO) heterostructures. By using La0.95Sr0.05TiO3 (LSTO) epitaxially grown on different single crystal substrates (such as STO, GdScO3, LaAlO3, (LaAlO3)0.3(Sr2AlTaO6)0.7, and CeO2 buffered STO) as the model systems, the formation of a conducting substrate surface layer (CSSL) on STO substrate is shown at relatively low growth temperature and high oxygen pressure (725 °C, 5 × 10–4 Torr), which contributes to the enhanced conductivity of the LSTO/STO heterostructures. Different from the conventional oxygen vacancy model, this work reveals that the formation of the CSSL occurs when growing an oxide layer (LSTO in this case) on STO, while neither annealing nor the growth of an Au layer alone at the exact same growth condition generates the CSSL in STO. It demonstrates that the oxide layer actively pulls oxygen from STO substrate at given growth conditions, leading to the formation of the CSSL. The observations emphasize the oxygen transfer across film/substrate interface during the synthesis of oxide heterostructures playing a critical role in functional properties.

Magnesium oxide remained interesting from long time for several important phenomena like; defect induced magnetism, spin electron reflectivity, broad laser emission etc. Moreover, nanostructures of this material exhibited suitability for different kinds of applications ranging from wastewater treatment to spintronics depending upon their shape and size. In this way, researchers had grown nanostructures in the form of nanoparticles, thin films, nanotubes, nanowalls, nanobelts. Though nanoparticles and thin films are well known form of nanostructures and wide variety of synthesis approaches are available, however, limited methodology for other nanostructures are available. In order to grow these nanostructures in an optimized way an understanding of these methods is essential. Thus, this review article depicts an overview of various approaches for design of different kinds of nanostructures.

We report on the growth of stoichiometric, single-crystal YCrO3 epitaxial thin films on (001) SrTiO3 substrates using pulsed laser deposition. X-ray diffraction and atomic force microscopy reveal that the films grew in a layer-by-layer fashion with excellent crystallinity and atomically smooth surfaces. Magnetization measurements demonstrate that the material is ferromagnetic below 144 K. The temperature dependence of dielectric permittivity shows a characteristic relaxor-ferroelectric behavior at TC = 375–408 K. A dielectric anomaly at the magnetic transition temperature indicates a close correlation between magnetic and electric order parameters in these multiferroic YCrO3 films. These findings provide guidance to synthesize rare-earth, chromite-based multifunctional heterostructures and build a foundation for future studies on the understanding of magnetoelectric effects in similar material systems.

We have conducted in situ measurements of the surface plasmons and electrical resistivity of noble metal thin films. We present results for the electrical resistivity of these materials as functions of the angle of incidence for p-polarized light of wavelength λ = 632 nm in the Kretschmann configuration optical system. We observe a significantly lower resistivity (higher conductivity) under resonance conditions for the surface plasmon polaritons. The resistivity data are supported by COMSOL simulations of the evanescent fields associated with the surface plasmons. We discuss the resistivity data in terms of the theoretical models, which suggest that the electrical conductivity of the transition metals is sensitive to Umklapp electron-electron scattering and attractive interactions between free electrons because of the screening of the d-band electrons by the s-band electrons.

In the present work, Barium titanate BaTiO 3 (BTO) thin films were prepared by sol - gel spin coating method. High resolution X-ray diffraction study reveals the formation of single phase polycrystalline structure of barium titanate thin films. The films were found to be highly transparent in the visible region and a rough and porous surface morphology which is beneficial for gas sensing applications. Gas-sensing performance of BTO thin film based sensor was studied for varying concentration of NO x gas at room temperature. The sensor showed enhanced response (17.6% to 33.3%) with increase in concentration of NO x gas (50 to 500 ppm). Results highlight the fact that multifunctional BTO films can be exploited for efficient NO x gas even at room temperature. [ABSTRACT FROM AUTHOR]

Ferroelectric Barium titanate, BaTiO 3 (BTO) thin film has been prepared successfully by sol-gel hydrothermal method (SG-HT) which combines the basic sol-gel process with hydrothermal treatment. High resolution X-ray diffraction (HR-XRD) study reveals single phase polycrystalline tetragonal structure of the prepared BTO thin film. Optical properties were studied using UV- Visible spectroscopy and band gap was found to be 3.51 eV. The I–V characteristics revealed a low dark current (I off ) of 6.07 × 10 -9 A for the prepared BTO thin film which increases to 4.06 × 10 -6 A (I on ) by almost three orders of magnitude when illuminated with UV radiation (λ = 365 nm, Intensity = 24 μW/cm 2 ). The photoconductive gain (K = I on /I off ), was found to be 6.7 × 10 2 . It can be clearly seen that the prepared BTO film can be utilized as an efficient Ultraviolet photodetector. [ABSTRACT FROM AUTHOR]

Abstract: Creep stresses have been obtained for a thin rotating disc of exponentially variable thickness with inclusion and edge load using Seth's transition theory. From the numerical results, it has been observed that for the rotating disc made of incompressible material, radial stress is maximum at the internal surface as compared to circumferential stress and this value of radial stress further increases with the increase in angular speed. Rotating disc is likely to fracture by cleavage close to the inclusion at the bore but with edge load we can give more strength to the disk not to fracture. [Copyright &y& Elsevier]

The influence of lattice strain on magnetism is studied for perovskite rare-earth chromite, YCrO3 (YCO) thin films. A combined theoretical and experimental approach is used to demonstrate the correlation between lattice-strain and magnetic properties of YCO films. The first-principles calculations reveal that the local Cr magnetic moments and the out-of-plane magnetization linearly increase with changing the in-plane lattice strain from compressive to tensile. The experimental results agree with the theory findings showing a strong dependence of magnetization on epitaxial strain in YCO films. These results unveil the lattice-strain-controlled functionalities on perovskite rare-earth chromites and related material systems.

MnxZn1−xO thin films (x = 0%, 1%, 3%, and 5%) were grown on corning glass substrates using sol–gel technique. Single-phase hexagonal wurtzite structure was confirmed using X-ray diffraction. Raman analysis revealed the presence of Mn content with an additional vibrational mode at 570 cm−1. The surface morphology of the samples was observed by scanning electron microscopy which suggested that the grain size increases with an increase in Mn concentration. The optical bandgap increases with increasing Mn concentration due to a significant blueshift in UV–visible absorption spectra. The alteration of the bandgap was verified by the I–V measurements on ZnO and Mn-ZnO films. The various functional groups in the thin films were recorded using FTIR analysis. Magnetic measurements showed that MnxZn1−xO films are ferromagnetic, as Mn induces a fully polarised state. The effect of Mn2+ ions doping on MnxZn1−xO thin films was investigated by extracting various parameters such as lattice parameters, energy bandgap, resistivity, and magnetisation. The observed coercivity is about one-fifth of the earlier published work data which indicates the structure is soft in nature, having less dielectric/magnetic loss, and hence can be used as ultra-fast switching in spintronic devices.

Abstract Mixtures of Ce‐doped rare‐earth aluminum perovskites are drawing a significant amount of attention as potential scintillating devices. However, the synthesis of complex perovskite systems leads to many challenges. Designing the A‐site cations with an equiatomic ratio allows for the stabilization of a single‐crystal phase driven by an entropic regime. This work describes the synthesis of a highly epitaxial thin film of configurationally disordered rare‐earth aluminum perovskite oxide (La0.2Lu0.2Y0.2Gd0.2Ce0.2)AlO3 and characterizes the structural and optical properties. The thin films exhibit three equivalent epitaxial domains having an orthorhombic structure resulting from monoclinic distortion of the perovskite cubic cell. An excitation of 286.5 nm from Gd3+ and energy transfer to Ce3+ with 405 nm emission are observed, which represents the potential for high‐energy conversion. These experimental results also offer the pathway to tunable optical properties of high‐entropy rare‐earth epitaxial perovskite films for a range of applications.