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All-dielectric nanoarrays have strong electromagnetic resonances with various interesting applications and are tuned by adjusting their geometrical parameters. However, their optical properties are permanently encoded during fabrication. This study presents robust dynamically tunable all-dielectric nanoresonators for controllable, reversible, and reproducible color filtering. Our design uses an array of TiO2 nanodiscs embedded in a transparent, stretchable polydimethylsiloxane (PDMS) membrane and exhibits a narrow spectral response due to Mie magnetic and electric dipole resonances hybridized with the TiO2 nanodiscs lattice modes. By mechanically stretching the PDMS membrane, the pitch of the TiO2 nanodiscs was increased and the spectral location of the resonances was altered. Additionally, an optically asymmetric structure was fabricated by partially embedding TiO2 nanodiscs in PDMS. Thus, the magnitude of the Rayleigh anomaly diffraction, which could interrupt the dipole resonances, was reduced. Our design has sharp, frequency-tunable resonances in the visible spectrum, and we demonstrated dynamic tunability by stretching the metasurfaces.

The responsivity spectrum of a photodetector is one of its key specifications. It ultimately originates from the combination of the absorption spectrum of the photosensitive region and the internal quantum efficiency. Many applications of photodetectors would benefit from an improved ability to tailor the responsivity spectrum. This is particularly true for color and multispectral imaging. The absorption spectrum of a bulk (unstructured) semiconductor is fixed however, being determined by its complex refractive index. Here, we review recent work that demonstrates that the absorption spectrum of a photodetector can be controlled via waveguide resonances in semiconductor nanowires. We discuss the physical interpretation for this phenomenon. We review work in which p-i-n photodiodes were incorporated into vertically oriented silicon nanowires, and then used for color imaging. We review work in which tandem-style photodetectors were demonstrated, with a p-i-n silicon nanowire photodiode formed above an n-i-p planar silicon photodiode. We review work in which narrowband photodetection across the visible-to-infrared was demonstrated using germanium nanowires. Finally, we describe related work in which silicon nanowires have been explored for other applications, namely solar cells.

At visible wavelengths, photodetection in three channels (red, green and blue) enables color imaging. Yet the spectra of most materials provide richer information than just color, and therefore considerable interest exists for imaging with multiple spectral bands across the visible to infrared. This endeavor requires narrowband photodetection, which is generally achieved by combining broadband photodetectors with filters or spectrometers, but with added bulk and cost. Here we report, for the first time to our knowledge, vertical germanium nanowires as narrowband photodetectors. Our devices exhibit spectral response peaks that are as narrow as 40 nm and can be shifted from visible (~600 nm) to infrared (~1600 nm) wavelengths by appropriate design. The spectral selectivity arises from the nanowires acting as waveguides and, surprisingly, is enhanced by radial narrowing of the carrier collection region due to surface recombination. The incorporation of germanium into integrated circuits in a high yield and c...

These In a powers system network there are many problems related to power quality. So to improve power quality of a system we use different devices such as active power filters. Active power filters are classified into two types that is Shunt Active Power Filter (APF) and Series Active Power Filter (APF) and combination of both is known as UPQC (Unified Power Quality Conditioner). Here we have done simulation of Shunt Active Power Filter, Series Active Power Filter and Unified Power Quality Conditioner. Shunt APF is used to mitigate the problems due to current harmonics which is because of non-linear load and make source current sinusoidal and distortion free. The control scheme used is hysteresis current controller using "p-q theory". Series APF is used to mitigate problems caused due to voltage distortion and unbalance present in source voltage and make load voltage perfectly balanced and regulated. The control scheme used is Hysteresis voltage controller by using a-b-c to d-q transformations. Then Shunt APF and Series APF is combined for designing UPQC and by this current harmonics in load current and voltage unbalances in source voltage both are removed and source current becomes sinusoidal and load voltage becomes perfectly balanced.

In parallel to developing technology, demand for more energy makes us seek new energy sources. The most important application field of this research is renewable energy resources. Solar energy is being popular ones owing to abundant, ease of availability and convertibility to the electric energy. This paper covers a detailed analysis of solar PV system with Cuk converter such that it gives constant and stepped up dc voltage to the load. A Cuk Converter is used for examine the performance of solar PV system. Simulink of cuk converter in PV system and analyzing output voltage through MATLAB.

International audience; A single silicon nanowire core-shell structure has been elaborated. Technological stages of the process are presented. The device results in a P-i-N radial junction: the core is a P-type silicon nanowire encapsulated in an intrinsic thin silicon layer and an N-type doped silicon layer. Scanning electron microscopy observations, as well as the electrical I(V) characterisation on single nanowires, are presented.

The future use of nanostructures such as silicon nanowires in solar cells will only occur if their growth is selforganized, with high density, controlled dimensions and spacing. In this work we develop and study the first elaboration steps of high quality arrays of nanowires functionalized as solar cells using a radial junction. The core of the structure is made of a P-doped nanowire grown by Chemical Vapor Deposition (CVD) using the Vapor-Liquid-Solid (VLS) method, and the shell is fabricated by a 2D conformal deposition of N-doped silicon layer by CVD. The resulting device is then a dense array of vertically aligned and functionalized silicon nanowires that presents interesting enhanced light absorption.

We experimentally demonstrate arrays of vertical Ge nanowires as spectrally-selective photodetectors at visible to infrared wavelengths. Measurements reveal that the external quantum efficiency spectra of fabricated devices vary with the radius of the constituent nanowires.

International audience; The introduction of Hydrogen Chloride during the in-situ doping of Silicon Nanowires (SiNWs) grown using the Vapour Liquid Solid (VLS) mechanism was investigated. Compared with non-chlorinated atmospheres, the use of HCl with dopant gases considerably improves the surface morphology of the SiNWs, leading to extremely smooth surfaces and a greatly reduced tapering. The variations in the wire diameter are massively reduced for boron doping, and can not be measured at 600°C for phosphorous over several tens of micrometers. This remarkable feature is accompanied by a frozen gold migration from the catalyst, with no noticeable levels of gold clusters observed using scanning electron microscopy. A detailed study of the NWs apparent resistivity reveals that the dopant incorporation is effective for both types of doping. A graph linking the apparent resistivity to the dopant to silane dilution ratio is built for both types of doping and discussed in the frame of the previous results.

Silicon nanowires (Si NWs) are promising candidates for field-effect transistor (FET) conduction channel. Planar configuration using a back gate is an easy way to study these devices. We demonstrate the possibility to build high performance FET using a simple silicidation process leading to high effective holes' mobility between 130 cm2⋅V-1⋅s-1 and 200 cm2⋅V-1⋅s-1 and good ION/IOFF ratio up to 105. Moreover we investigated the possibility to passivate the NWs using either a high-k dielectric layer or a thermal oxide shell around the NWs. This leads to a reduction of the hysteretic behavior during the gate voltage sweep from 30 V to 1 V depending on the material and the gate configuration.

We demonstrate photodetectors for visible-to-infrared imaging, comprising vertical germanium nanowires on a silicon substrate, with a suspended graphene layer as the top electrical contact. Measured responsivity spectra show peaks that shift with increasing nanowire diameter.