Search

Certain imaging performance metrics are examined for a state-of-the-art 20 μm pixel pitch CMOS sensor (RadEye HR), coupled to a Gd2O2S:Tb scintillator screen. The signal transfer property (STP), the modulation transfer function (MTF), the normalized noise power spectrum (NNPS) and the detective quantum efficiency (DQE) were estimated according to the IEC 62220-1-1:2015 standard. The detector exhibits excellent linearity (coefficient of determination of the STP linear regression fit, R2 was 0.9978), while its DQE peaks at 33% and reaches 10% at a spatial frequency of 3 cycles/mm, for the measured with a Piranha RTI dosimeter (coefficient of variation CV = 0.03%) exposure value of 28.1 μGy DAK (detector Air Kerma). The resolution capabilities of the X-ray detector under investigation were compared to other commercial CMOS sensors, and were found in every case higher, except from the previous RadEye HR model (CMOS—Gd2O2S:Tb screen pair with 22.5 μm pixel pitch) version which had slightly better MTF. The present digital imager is designed for industrial inspection applications, nonetheless its applicability to medical imaging, as well as dual-energy is considered and certain approaches are discussed in this respect.

High-resolution, low-noise x-ray detectors based on the complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology have been developed and proposed for digital breast tomosynthesis (DBT). In this study, we evaluated the three-dimensional (3D) imaging performance of a 50 ��m pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). The two-dimensional (2D) angle-dependent modulation transfer function (MTF), normalized noise power spectrum (NNPS), and detective quantum efficiency (DQE) were experimentally characterized and modeled using the cascaded system analysis at oblique incident angles up to 30��. The cascaded system model was extended to the 3D spatial frequency space in combination with the filtered back-projection (FBP) reconstruction method to calculate the 3D and in-plane MTF, NNPS and DQE parameters. The results demonstrate that the beam obliquity blurs the 2D MTF and DQE in the high spatial frequency range. However, this effect can be eliminated after FBP image reconstruction. In addition, impacts of the image acquisition geometry and detector parameters were evaluated using the 3D cascaded system analysis for DBT. The result shows that a wider projection angle range (e.g. ��30��) improves the low spatial frequency (below 5 mm-1) performance of the CMOS APS detector. In addition, to maintain a high spatial resolution for DBT, a focal spot size of smaller than 0.3 mm should be used. Theoretical analysis suggests that a pixelated scintillator in combination with the 50 ��m pixel pitch CMOS APS detector could further improve the 3D image resolution. Finally, the 3D imaging performance of the CMOS APS and an indirect amorphous silicon (a-Si:H) thin-film transistor (TFT) passive pixel sensor (PPS) detector was simulated and compared.

In this study, the light output of a zinc selenide activated with tellurium (ZnSe: Te) single crystal was measured for X-ray radiography applications. A cubic crystal (10 &times, 10 &times, 10 mm) was irradiated using X-rays with tube voltages from 50 to 130 kV. The resulting energy absorption efficiency, detective quantum efficiency, and absolute luminescence efficiency were compared to published data for equally sized GSO: Ce (gadolinium orthosilicate) and BGO (bismuth germanium oxide) crystals. The emitted light was examined to estimate the spectral compatibility with widely used optical sensors. Energy absorption efficiency and detective quantum efficiency of ZnSe: Te and BGO were found to be similar, within the X-ray energies in question. Light output of all three crystals showed a tendency to increase with increasing X-ray tube voltage, but ZnSe: Te stood at least 2 EU higher than the others. ZnSe: Te can be coupled effectively with certain complementary metal&ndash, oxide&ndash, semiconductors (CMOS), photocathodes, and charge-coupled-devices (CCD), as the effective luminescence efficiency results assert. These properties render the material suitable for various imaging applications, dual-energy arrays included.

The demand for adequate image quality with low radiation doses for patients has greatly increased. This is especially true in the case of position verification in radiotherapy which requires a high number of images per patient. This study presents a physical characterisation of a new clinical detector named “Lassena (CsI)” based on a thick layer of structured thallium activated caesium iodide and complementary metal-oxide semiconductor technology with active pixel sensor architecture for general X-ray imaging and cone-beam computed tomography (CBCT) applications. We made a critical appraisal of its performance for the first time and determined its signal transfer property (STP) and its detective quantum efficiency (DQE) by acquiring the pre-sampling modulation transfer function (pMTF) and normalised noise power spectrum (NNPS) in addition to the dark current calculation. The investigation was conducted with the application of three X-ray beam qualities: (50 kV (RQA3), 70 kV (RQA5) and 90 kV (RQA7)) in compliance with the International Electrotechnical Commission (IEC 62220-1(2003)) standard. The STP was found to be linear with the coefficient of determination (R2) more than 0.9995 in all cases. The spatial resolution and NNPS results led to acceptable DQE values at all energies; in particular the DQE values at 0.5 line pairs per mm (DQE(0.5)) which were 0.46 for RQA3, 0.52-0.56 for RQA5 and 0.55-0.59 for RQA7. Lastly, the dark current was 2.51 pA/cm2 for a 50 μ m pixel pitch. For CBCT applications, Lassena (CsI) showed very promising results.

The demand for adequate image quality with low radiation doses for patients has greatly increased. This is especially true in the case of position verification in radiotherapy which requires a high number of images per patient. This study presents a physical characterisation of a new clinical detector based on a thick layer of structured Thallium activated Cesium Iodide. We made a critical appraisal of its performance for the first time and determined its detective quantum efficiency (DQE) by acquiring the pre-sampling modulation transfer function and normalised noise power spectrum (NNPS). The investigation was conducted with the application of three x-ray beam qualities in compliance with the International Electrotechnical Commission (IEC 62220-1:2003) standard. The spatial resolution and NNPS results led to relatively high DQE values at all energies: DQEs (0.5) were 0.46 for 54kV, 0.52-0.56 for 74kV and 0.55-0.59 for 92kV.

Purpose: Large area x-ray imagers based on complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology have been proposed for various medical imaging applications including digital breast tomosynthesis (DBT). The low electronic noise (50–300 e{sup −}) of CMOS APS x-ray imagers provides a possible route to shrink the pixel pitch to smaller than 75 μm for microcalcification detection and possible reduction of the DBT mean glandular dose (MGD). Methods: In this study, imaging performance of a large area (29 × 23 cm{sup 2}) CMOS APS x-ray imager [Dexela 2923 MAM (PerkinElmer, London)] with a pixel pitch of 75 μm was characterized and modeled. The authors developed a cascaded system model for CMOS APS x-ray imagers using both a broadband x-ray radiation and monochromatic synchrotron radiation. The experimental data including modulation transfer function, noise power spectrum, and detective quantum efficiency (DQE) were theoretically described using the proposed cascaded system model with satisfactory consistency to experimental results. Both high full well and low full well (LFW) modes of the Dexela 2923 MAM CMOS APS x-ray imager were characterized and modeled. The cascaded system analysis results were further used to extract the contrast-to-noise ratio (CNR) for microcalcifications with sizes of 165–400 μm at variousmore » MGDs. The impact of electronic noise on CNR was also evaluated. Results: The LFW mode shows better DQE at low air kerma (K{sub a} < 10 μGy) and should be used for DBT. At current DBT applications, air kerma (K{sub a} ∼ 10 μGy, broadband radiation of 28 kVp), DQE of more than 0.7 and ∼0.3 was achieved using the LFW mode at spatial frequency of 0.5 line pairs per millimeter (lp/mm) and Nyquist frequency ∼6.7 lp/mm, respectively. It is shown that microcalcifications of 165–400 μm in size can be resolved using a MGD range of 0.3–1 mGy, respectively. In comparison to a General Electric GEN2 prototype DBT system (at MGD of 2.5 mGy), an increased CNR (by ∼10) for microcalcifications was observed using the Dexela 2923 MAM CMOS APS x-ray imager at a lower MGD (2.0 mGy). Conclusions: The Dexela 2923 MAM CMOS APS x-ray imager is capable to achieve a high imaging performance at spatial frequencies up to 6.7 lp/mm. Microcalcifications of 165 μm are distinguishable based on reported data and their modeling results due to the small pixel pitch of 75 μm. At the same time, potential dose reduction is expected using the studied CMOS APS x-ray imager.« less

Recently CMOS Active Pixels Sensors (APSs) have become a valuable alternative to amorphous Silicon and Selenium Flat Panel Imagers (FPIs) in bio-medical imaging applications. CMOS APSs can now be scaled up to the standard 20 cm diameter wafer size by means of a reticle stitching block process. However despite wafer scale CMOS APS being monolithic, sources of non-uniformity of response and regional variations can persist representing a significant challenge for wafer scale sensor response. Non-uniformity of stitched sensors can arise from a number of factors related to the manufacturing process, including variation of amplification, variation between readout components, wafer defects and process variations across the wafer due to manufacturing processes. This paper reports on an investigation into the spatial non-uniformity and regional variations of a wafer scale stitched CMOS APS. For the first time a per-pixel analysis of the electro-optical performance of a wafer CMOS APS is presented, to address inhomogeneity issues arising from the stitching techniques used to manufacture wafer scale sensors. A complete model of the signal generation in the pixel array has been provided and proved capable of accounting for noise and gain variations across the pixel array. This novel analysis leads to readout noise and conversion gain being evaluated at pixel level, stitching block level and in regions of interest, resulting in a coefficient of variation ≤ 1.9%. The uniformity of the image quality performance has been further investigated in a typical X-ray application, i.e. mammography, showing a uniformity in terms of CNR among the highest when compared with mammography detectors commonly used in clinical practise. Finally, in order to compare the detection capability of this novel APS with the currently used technology (i.e. FPIs), theoretical evaluation of the Detection Quantum Efficiency (DQE) at zero-frequency has been performed, resulting in a higher DQE for this detector compared to FPIs. Optical characterization, X-ray contrast measurements and theoretical DQE evaluation suggest that a trade off can be found between the need of a large imaging area and the requirement of a uniform imaging performance, making the DynAMITe large area CMOS APS suitable for a range of bio-medical applications.

Complementary metal-oxide-semiconductors (CMOS) active pixel sensors (APS) have been introduced recently in many scientific applications. This work reports on the performance (in terms of signal and noise transfer) of an X-ray detector that uses a novel CMOS APS which was developed for medical X-ray imaging applications. For a full evaluation of the detector's performance, electro-optical and X-ray characterizations were carried out. The former included measuring read noise, full well capacity and dynamic range. The latter, which included measuring X-ray sensitivity, presampling modulation transfer function (pMTF), noise power spectrum (NPS) and the resulting detective quantum efficiency (DQE), was assessed under three beam qualities (28 kV, 50 kV (RQA3) and 70 kV (RQA5) using W/Al) all in accordance with the IEC standard. The detector features an in-pixel option for switching the full well capacity between two distinct modes, high full well (HFW) and low full well (LFW). Two structured CsI:Tl scintillators of different thickness (a thin one for high resolution and a thicker one for high light efficiency) were optically coupled to the sensor array to optimize the performance of the system for different medical applications. The electro-optical performance evaluation of the sensor results in relatively high read noise (∼360 e -), high full well capacity (∼1.5×10 6 e -) and wide dynamic range (∼73 dB) under HFW mode operation. When the LFW mode is used, the read noise is lower (∼165) at the expense of a reduced full well capacity (∼0.5×10 6 e -) and dynamic range (∼69 dB). The maximum DQE values at low frequencies (i.e. 0.5 lp/mm) are high for both HFW (0.69 for 28 kV, 0.71 for 50 kV and 0.75 for 70 kV) and LFW (0.69 for 28 kV and 0.7 for 50 kV) modes. The X-ray performance of the studied detector compares well to that of other mammography and general radiography systems, obtained under similar experimental conditions. This demonstrates the suitability of the detector for both mammography and general radiography, with the use of appropriate scintillators. The high DQE values obtained under low mammographic exposures (up to 0.65 for 22.3 μGy) matches the demand for high detectability in imaging of the dense breast. © 2012 Elsevier B.V.

Stitched, large area, complementary metal-oxide-semiconductor (CMOS), active pixel sensors (APS) show promises for X-ray imaging applications. In this paper we present an investigation of the effects of stitching on uniformity of sensor response for an experimental APS. The sensor, known as LAS (large area sensor), was made by reticular stitching onto a single silicon wafer of a 5×5 array of regions consisting of 270×270 pixels with 40 μm pixel pitch, to yield 1350×1350 pixels and an imaging area of 54×54 mm. Data acquired from two different sensors of the same type were filtered to remove spiking pixels and electromagnetic interference (EMI). The non-linear compensation (NLC) technique for CMOS sensor analysis was used to determine the variation in gain, read noise, full well capacity and dynamic range between stitched regions. Variations across stitched regions were analysed using profiles, analysis of pixel variations at stitch boundaries and using a measurement of non-uniformity within a stitched region. The results showed that non-uniformity variations were present, which increased with signal (1.5–3.5% at dark signal, rising to 3–8%). However, these were found to be smaller than variations caused by differences in readout electronics, particularly at low signal levels. The results suggest these variations should be correctable using standard calibration methods.

The Large Area Sensor (LAS) is a 1350 times1350 array of active pixels on a 40 Im pitch fabricated in a 0.35 im CMOS process. Stitching technology is employed to achieve an area of 5.4 cm times5.4 cm. The sensor includes 'regions of reset', whereby three different integration times can be set on the array to achieve a large imaging range for static scenes. Characterization of the noise performance included temporal and fixed pattern sources. LAS was found to have a read noise of 62 e-, a full well capacity of 61 times103 e- and a conversion gain of 5 e- per digital number (DN). The fixed pattern noise (FPN) was evaluated at half saturation; within a single stitched section of the array, column-to-column FPN was found to be 0.6%, while the pixel-to-pixel FPN was 3%. Both FPN sources were found to be gain related and could be corrected via flat fielding. Based on the results of characterization, LAS was coupled to a structured CsI:Tl scintillator and included in an X-ray diffraction system developed for the analysis of breast biopsy samples. Data acquired with plastic test objects agrees with that acquired by a previous prototype sensor. It is demonstrated that an imaging output range of 140 dB can be achieved using integration times of 0.1 ms to record the transmitted X-ray beam and 2.3 s to record the lower intensity scattered radiation.

Digital detectors based on complementary metal-oxide-semiconductors (CMOS) active pixel sensor (APS) technology have been introduced recently in many scientific applications. This work is focused on the X-ray performance evaluation of a novel CMOS APS detector in low energy medical imaging applications using monochromatic synchrotron radiation (i.e., 17-35 keV), which also allows studying how the performance varies with energy. The CMOS sensor was coupled to a Thallium-activated structured cesium iodide (CsI:Tl) scintillator and the detector's X-ray performance evaluation was carried out in terms of sensitivity, presampling modulation transfer function (pMTF), normalized noise power spectrum (NNPS) and the resulting detective quantum efficiency (DQE). A Monte Carlo simulation was used to validate the experimentally measured low frequency DQE. Finally, the effect of iodine's secondary generated K-fluorescence X-rays on pMTF and DQE results was evaluated. Good agreement (within 5%) was observed between the Monte Carlo and experimentally measured low frequency DQE results. A CMOS APS detector was characterized for the first time over a wide range of low energies covering the mammographic spectra. The detector's performance is limited mainly by the detectability of the scintillator. Finally, we show that the current data could be used to calculate the detector's pMTF, NNPS and DQE for any mammographic spectral shape within the investigated energies.

The most important factors that affect the image quality are contrast, spatial resolution and noise. These factors and their relationship are quantitatively described by the Contrast-to-Noise Ratio (CNR), Signal-to-Noise Ratio (SNR), Modulation Transfer Function (MTF), Noise Power Spectrum (NPS) and Detective Quantum Efficiency (DQE) parameters. The combination of SNR, MTF and NPS determines the DQE, which represents the ability to visualize object details of a certain size and contrast at a given dose. In this study the performance of a novel large area Complementary Metal-Oxide-Semiconductor (CMOS) Active Pixel Sensor (APS) X-ray detector, called DynAMITe (Dynamic range Adjustable for Medical Imaging Technology), was investigated and compared to other three digital mammography systems (namely a) Large Area Sensor (LAS), b) Hamamatsu C9732DK, and c) Anrad SMAM), in terms of physical characteristics and evaluation of the image quality. DynAMITe detector consists of two geometrically superimposed grids: a) 2560 × 2624 pixels at 50 μm pitch, named Sub-Pixels (SP camera) and b) 1280 × 1312 pixels at 100 μm pitch, named Pixels (P camera). The X-ray performance evaluation of DynAMITe SP detector demonstrated high DQE results (0.58 to 0.64 at 0.5 lp/mm). Image simulation based on the X-ray performance of the detectors was used to predict and compare the mammographic image quality using ideal software phantoms: a) one representing two three dimensional (3-D) breasts of various thickness and glandularity to estimate the CNR between simulated microcalcifications and the background, and b) the CDMAM 3.4 test tool for a contrast-detail analysis of small thickness and low contrast objects. The results show that DynAMITe SP detector results in high CNR and contrast-detail performance. © 2012 IEEE.

The aim of this study was to estimate the influence of K-characteristic radiation on the performance of x-ray scintillating screens containing two heavy elements by Monte Carlo methods. K-characteristic radiation is produced within materials of at least one heavy (high atomic number) element. This radiation may result either in spatial resolution degradation or in emission efficiency decrease. The scintillators studied were the following: LYSO (Lu1.8Y0.2SiO5 and LuYSiO5), CsI and YTaO4. All the aforementioned scintillators have two heavy elements, thus the K-characteristic radiation of the high-Z element can produce additional K-characteristic photons on the low-Z element, resulting in further degradation. Scintillator performance was described in terms of the: (a) Probability of generation and reabsorption of a K-characteristic photon (PKR) and (b) Spatial distribution of K-characteristic radiation within the scintillator material. A custom validated Monte Carlo model was used, in order to simulate the transport of K-characteristic radiation within the above scintillator materials. Results showed that, depending on screen thickness (20-100 mg/cm2) and incident photon energy (20-80 keV) the scintillator's emission efficiency may be significantly reduced. © 2009 IOP Publishing Ltd and SISSA.

Digital X-ray detectors based on Complementary Metal-Oxide- Semiconductor (CMOS) Active Pixel Sensor (APS) technology have been introduced in the early 2000s in medical imaging applications. In a previous study the X-ray performance (i.e. presampling Modulation Transfer Function (pMTF), Normalized Noise Power Spectrum (NNPS), Signal-to-Noise Ratio (SNR) and Detective Quantum Efficiency (DQE)) of the Dexela 2923MAM CMOS APS X-ray detector was evaluated within the mammographic energy range using monochromatic synchrotron radiation (i.e. 17-35 keV). In this study image simulation was used to predict how the mammographic beam quality affects image quality. In particular, the experimentally measured monochromatic pMTF, NNPS and SNR parameters were combined with various mammographic spectral shapes (i.e. Molybdenum/Molybdenum (Mo/Mo), Rhodium/Rhodium (Rh/Rh), Tungsten/Aluminium (W/Al) and Tungsten/Rhodium (W/Rh) anode/filtration combinations at 28 kV). The image quality was measured in terms of Contrast-to-Noise Ratio (CNR) using a synthetic breast phantom (4 cm thick with 50% glandularity). The results can be used to optimize the imaging conditions in order to minimize patient's Mean Glandular Dose (MGD).

There is a suggestion of a new approach to mammography whereby following a conventional mammogram, the radiologist could interrogate suspicious regions using X-ray diffraction whilst the patient is still present and to establish the true extent of disease. A starting point for this work is to quantify the minimum detectable amount of breast cancer within a realistic thickness phantom. Perspex has a similar diffraction pattern to healthy breast tissue whilst water is similar to breast tumour, hence these two materials are used as tissue equivalent test objects for X-ray diffraction measurements. The preliminary results show linear agreement between the ratio of Perspex to water and the ratio of the diffraction peak intensities at 0.7 nm-1 and 1.5 nm-1. The minimum detectable limit for a component of the two 'tissue' mix was found to be 4.1%. This suggests that X-ray diffraction can be used to quantify tissue like mixtures down to the 4.1% / 95.9% mix level and hence has a strong potential for delineating the extent of infiltration disease.

Medical imaging is a long established part of patient management in the treatment of disease. However, in most cases it only provides anatomical detail and does not provide any form of tissue characterisation. This is particularly true for X-ray imaging. Recent studies on tissue diffraction have shown that true molecular signatures can be derived for different tissue types. Breast cancer samples and liver tissue have been studied. It has been shown that diffraction profiles can be traced away from the primary tumour in excised breast tissue samples and that potentially 3mm fat nodules in liver tissue can be identified in patients at acceptable doses.