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4. III-Nitride Nanowire Based Light Emitting Diodes on Carbon Paper

8. Silicon Ion Implant Activation in β-(Al0.2Ga0.8)2O3.

9. PtOx Schottky Contacts on Degenerately Doped 2¯01β-Ga2O3 Substrates.

12. Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

14. Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance

18. A Simple Edge Termination Design for Vertical GaN P-N Diodes

23. Delta-doped β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors by ozone molecular beam epitaxy

31. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs

34. High-resolution dislocation imaging and micro-structural analysis of HVPE-βGa2O3 films using monochromatic synchrotron topography.

35. Operational profiling and statistical analysis of Arleigh Burke-class destroyers

36. Vertical conduction properties of few-layer epitaxial graphene / n-type 4H-SiC heterojunctions at cryogenic temperatures

37. Profiling the temperature distribution in AlGaN/GaN HEMTs with nanocrystalline diamond heat spreading layers

39. Bilayer graphene by bonding CVD graphene to epitaxial graphene

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