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1. Quantum critical scaling of the conductivity tensor at the metal-insulator transition in Nb$_{1-x}$Ti$_{x}$N

Author

Hazra, D., Haldar, Prosenjit, Laad, M. S., Tsavdaris, N., Mukhtarova, A., Jacquemin, M., Albert, R., Blanchet, F., Jebari, S., Grimm, A., Blanquet, E., Mercier, F., Chapelier, C., Hofheinz, M., and Raychaudhuri, Pratap

Subjects
Condensed Matter - Strongly Correlated Electrons, Condensed Matter - Disordered Systems and Neural Networks, Condensed Matter - Superconductivity
Abstract

In contrast to the Landau paradigm, a metal-insulator transition (MIT), driven purely by competition between itinerance and localization and unaccompanied by any conventional (e.g, magnetic) order-disorder instabilities, admits no obvious local order parameter. Here, we present a detailed analysis of the quantum criticality in magneto-transport data on the alloy Nb$_{1-x}$Ti$_{x}$N across a Ti-doping-driven a MIT. We demonstrate, for the first time, clear and novel quantum criticality reflected in the full conductivity tensor across the MIT. Wide ranging, comprehensive accord with recent theoretical predictions strongly suggests that these unanticipated findings are representative of a continuous MIT of the band-splitting type, rather than a conventional Anderson disorder or a "pure" correlation-driven first-order Mott type., Comment: 5 pages, 3 fugures

Published
2019

2. The role of Coulomb interaction in superconducting NbTiN thin films

Author

Hazra, D., Tsavdaris, N., Mukhtarova, A., Jacquemin, M., Blanchet, F., Albert, R., Jebari, S., Grimm, A., Blanquet, E., Mercier, F., Chapelier, C., and Hofheinz, M.

Subjects
Condensed Matter - Superconductivity
Abstract

We report on the superconducting properties of Nb$_{1-x}$Ti$_x$N thin films of thickness $\sim$ 10 nm, with different Ti fraction $x$ in the range $ 0 \leq x \leq 0.5$, deposited by high temperature chemical vapor deposition. In this parameter range, we observe that the superconducting critical temperature ($T_c$) increases with $x$. Our analysis, in accordance with both McMillan's and Finkelstein's theories, shows that disorder-enhanced Coulomb interaction decreases with $x$, leading to an increase of $T_c$., Comment: 6 pages, 5 figures

Published
2017
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3. Superconducting properties of very high quality NbN thin films grown by high temperature chemical vapor deposition

Author

Hazra, D., Tsavdaris, N., Jebari, S., Grimm, A., Blanchet, F., Mercier, F., Blanquet, E., Chapelier, C., and Hofheinz, M.

Subjects
Condensed Matter - Superconductivity
Abstract

Niobium nitride (NbN) is widely used in high-frequency superconducting electronics circuits because it has one of the highest superconducting transition temperatures ($T_c$ $\sim$ 16.5 K) and largest gap among conventional superconductors. In its thin-film form, the $T_c$ of NbN is very sensitive to growth conditions and it still remains a challenge to grow NbN thin film (below 50 nm) with high $T_c$. Here, we report on the superconducting properties of NbN thin films grown by high-temperature chemical vapor deposition (HTCVD). Transport measurements reveal significantly lower disorder than previously reported, characterized by a Ioffe-Regel ($k_F$$\ell$) parameter of $\sim$ 14. Accordingly we observe $T_c$ $\sim$ 17.06 K (point of 50% of normal state resistance), the highest value reported so far for films of thickness below 50 nm, indicating that HTCVD could be particularly useful for growing high quality NbN thin films.

Published
2016
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4. MoS2-assisted growth of highly-oriented AlN thin films by low-temperature van der Waals epitaxy.

Author

Patouillard, J., Bernard, M., Cadot, S., Gassilloud, R., Bernier, N., Grenier, A., Mantoux, A., Blanquet, E., Martin, F., Raynaud, C., and Gianesello, F.

Subjects
ALUMINUM nitride, SUBSTRATES (Materials science), TRANSITION metals, THIN films, ACOUSTIC devices
Abstract

Aluminum nitride (AlN) is a wide bandgap material used in acoustic devices, piezo- micro-electromechanical system and is promising for other electronic applications. However, for most applications, the AlN crystalline quality obtained by PVD or MOCVD is insufficient, and suitable growth substrates providing an adapted lattice match and coefficient of thermal expansion are limited. Alternatively, monocrystalline AlN wafers are not yet available in 200/300 mm sizes and suffer from high costs and quality issues. Here, we propose a novel approach involving a two-dimensional transition metal dichalcogenide (TMD) material as a seed layer, which displays an excellent lattice matching with AlN (>98%) allowing a strong enhancement in the c axis texture of sputtered AlN layers on Si(100)/SiO2 thermal oxide (500 nm) substrates. We have successfully demonstrated an eightfold improvement of the AlN (002) rocking curve compared to reference samples grown on thermal SiO2, thus providing a relevant and cost-effective process for the large-scale deployment of high-quality III-N materials on silicon-based substrates. [ABSTRACT FROM AUTHOR]

Published
2024
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6. Chemical conversion of MoS2 thin films deposited by atomic layer deposition (ALD) into molybdenum nitride monitored by in situ reflectance measurements

Author

Patouillard, J., primary, Gassilloud, R., additional, Mercier, F., additional, Mantoux, A., additional, Boichot, R., additional, Crisci, A., additional, Bernard, M., additional, Gauthier, N., additional, Cadot, S., additional, Raynaud, C., additional, Gianesello, F., additional, and Blanquet, E., additional

Published
2023
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7. Chemical conversion of MoS2 thin films deposited by atomic layer deposition (ALD) into molybdenum nitride monitored by in situ reflectance measurements.

Author

Patouillard, J., Gassilloud, R., Mercier, F., Mantoux, A., Boichot, R., Crisci, A., Bernard, M., Gauthier, N., Cadot, S., Raynaud, C., Gianesello, F., and Blanquet, E.

Subjects
MOLYBDENUM nitrides, ATOMIC layer deposition, THIN films, REFLECTANCE measurement, METAL nitrides, MOLYBDENUM disulfide, NITRIDES, SILICON nitride films
Abstract

Two-dimensional (2D) metal nitrides are new emerging materials with potential applications in electronics, energy storage, or conversion efficiency. In this paper, we report the synthesis of molybdenum nitride by nitriding molybdenum disulfide (MoS2) via a 700 °C ammonia (NH3) reactive heat treatment. A well-controlled uniform MoS2 thin film was prepared by atomic layer deposition (ALD). The progressive MoS2 nitriding reaction has been demonstrated and monitored by in situ reflectance measurements. These results have been confirmed by Raman and x-ray photoelectron spectrometry. This method paves the way to a new potential route to the synthesis of Mo nitride obtained from a well-controlled uniform 2D-MoS2 thin film deposited by ALD. [ABSTRACT FROM AUTHOR]

Published
2023
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10. International collaborative follow-up investigation of graduating high school students' understandings of the nature of scientific inquiry : is progress Being made?

Author

Lederman, J. S., Lederman, N. G., Bartels, S., Jimenez, J., Acosta, K., Akubo, M., Aly, S., de Andrade, M. A. B. S., Atanasova, M., Blanquet, E., Blonder, R., Brown, P., Cardoso, R., Castillo-Urueta, P., Chaipidech, P., Concannon, J., Dogan, O. K., El-Deghaidy, H., Elzorkani, A., Ferdous, T., Fukuda, N., Gaigher, E., Galvis-Solano, L., Gao, Q., Guo, S., Gwekwerere, Y., Gyllenpalm, Jakob, Hamed Al-Lal, S., Han-Tosunoglu, C., Hattingh, A., Holliday, G., Huang, X., Irez, S., Jiménez, J., Kay, G., Koumara, A., Kremer, K., Kuo, P.-C., Lavonen, J., Leung, J. S. C., Liao, Z., Librea-Carden, M. R., Lin, S.-F., Liu, C., Liu, E., Liu, S.-Y., Mamlok-Naaman, R., Mcdonald, C. V., Möller, A., Morales, M., Mulvey, B. K., Neumann, I., Neurohr, A.-L., Pan, Y., Panjaburee, P., Penn, M., Plakitsi, K., Picholle, E., Ramnarain, U., Raykova, Z., Rundgren, Carl-Johan, Salonen, S., Santibáñez-Gómez, D., Schwartz, R., Sharma, R., Srisawasdi, N., Takiveikata, S., Urueta-Ortiz, T., Vitlarov, K., Voitle, F., Wishart, J., Lederman, J. S., Lederman, N. G., Bartels, S., Jimenez, J., Acosta, K., Akubo, M., Aly, S., de Andrade, M. A. B. S., Atanasova, M., Blanquet, E., Blonder, R., Brown, P., Cardoso, R., Castillo-Urueta, P., Chaipidech, P., Concannon, J., Dogan, O. K., El-Deghaidy, H., Elzorkani, A., Ferdous, T., Fukuda, N., Gaigher, E., Galvis-Solano, L., Gao, Q., Guo, S., Gwekwerere, Y., Gyllenpalm, Jakob, Hamed Al-Lal, S., Han-Tosunoglu, C., Hattingh, A., Holliday, G., Huang, X., Irez, S., Jiménez, J., Kay, G., Koumara, A., Kremer, K., Kuo, P.-C., Lavonen, J., Leung, J. S. C., Liao, Z., Librea-Carden, M. R., Lin, S.-F., Liu, C., Liu, E., Liu, S.-Y., Mamlok-Naaman, R., Mcdonald, C. V., Möller, A., Morales, M., Mulvey, B. K., Neumann, I., Neurohr, A.-L., Pan, Y., Panjaburee, P., Penn, M., Plakitsi, K., Picholle, E., Ramnarain, U., Raykova, Z., Rundgren, Carl-Johan, Salonen, S., Santibáñez-Gómez, D., Schwartz, R., Sharma, R., Srisawasdi, N., Takiveikata, S., Urueta-Ortiz, T., Vitlarov, K., Voitle, F., and Wishart, J.

Abstract

Understandings of the nature of scientific inquiry (NOSI), as opposed to engaging students in inquiry learning experiences, are included in science education reform documents around the world. However, little is known about what students have learned about NOSI during their pre-college school years. The purpose of this large-scale follow-up international project (i.e. 32 countries and regions, spanning six continents and including 3917 students for the high school sample) was to collect data on what exiting high school students have learned about NOSI. Additionally, the study investigated changes in 12th grade students' NOSI understandings compared to seventh grade (i.e. 20 countries and regions) students' understandings from a prior investigation [Lederman et al. (2019). An international collaborative investigation of beginning seventh grade students' understandings of scientific inquiry: Establishing a baseline. Journal of Research in Science Teaching, 56(4), 486-515. ]. This study documents and discusses graduating high school students' understandings and compares their understandings to seventh grade students' understandings of the same aspects of scientific inquiry for each country. It is important to note that collecting data from each of the 130+ countries globally was not feasible. Similarly, it was not possible to collect data from every region of each country. A concerted effort was made, however, to provide a relatively representative picture of each country and the world.

Published
2021
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13. Tractable Chemical Models for CVD of Silicon and Carbon

Author

Blanquet, E and Gokoglu, S. A

Subjects
Solid-State Physics
Abstract

Tractable chemical models are validated for the CVD of silicon and carbon. Dilute silane (SiH4) and methane (CH4) in hydrogen are chosen as gaseous precursors. The chemical mechanism for each systems Si and C is deliberately reduced to three reactions in the models: one in the gas phase and two at the surface. The axial-flow CVD reactor utilized in this study has well-characterized flow and thermal fields and provides variable deposition rates in the axial direction. Comparisons between the experimental and calculated deposition rates are made at different pressures and temperatures.

Published
1993
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14. Evolution of Crystal Structure During the Initial Stages of ZnO Atomic Layer Deposition

Author

Boichot, R., Tian, L., Richard, M.-I., Crisci, A., Chaker, A., Cantelli, V., Coindeau, S., Lay, S., Ouled, T., Guichet, C., Chu, M. H., Aubert, N., Ciatto, G., Blanquet, E., Thomas, O., Deschanvres, J.-L., Fong, D. D., Renevier, H., Boichot, R., Tian, L., Richard, M.-I., Crisci, A., Chaker, A., Cantelli, V., Coindeau, S., Lay, S., Ouled, T., Guichet, C., Chu, M. H., Aubert, N., Ciatto, G., Blanquet, E., Thomas, O., Deschanvres, J.-L., Fong, D. D., and Renevier, H.

Abstract

A complementary suite of in situ synchrotron X-ray techniques is used to investigate both structural and chemical evolution during ZnO growth by atomic layer deposition. Focusing on the first 10 cycles of growth, we observe that the structure formed during the coalescence stage largely determines the overall microstructure of the film. Furthermore, by comparing ZnO growth on silicon with a native oxide with that on Al2O3(001), we find that even with lattice-mismatched substrates and low deposition temperatures, the crystalline texture of the films is dependent strongly on the nature of the interfacial bonds.

Published
2016

15. Croissance de semi-conducteurs à grand gap

Author

Dedulle, Jean-Marc, CHAUSSENDE, D., Madar, R., Pons, M., BLANQUET, E., BAILLET, F., Chichignoud, G., Ucar-Morais, M., Claudel, A., Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG), NOVASIC, NOVASiC, Association Française de Mécanique, and Service irevues, irevues

Subjects
PVT / CVD, Modélisation, [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, Croissance SiC / AlN, [PHYS.MECA]Physics [physics]/Mechanics [physics], [CHIM.MATE]Chemical Sciences/Material chemistry, [PHYS.MECA] Physics [physics]/Mechanics [physics]
Abstract

Colloque avec actes et comité de lecture. Internationale.; International audience; La modélisation et la simulation des procédés de croissance tel que le transport physique en phase vapeur (PVT), le dépôt chimique en phase vapeur (CVD ou HTCVD) et les techniques hybrides (CFPVT), sont suffisamment au point pour être utilisées comme des outils de compréhension des phénomènes physiques couplés et comme des outils de conception de nouveaux procédés et d'optimisation de procédés existants. La modélisation des procédés d'élaboration rassemble plusieurs voies physico-chimiques de complexité variable, depuis des études thermodynamiques et/ou cinétiques jusqu'aux transferts simultanés de matière et de chaleur couplées avec les bases de données et propriétés thermodynamiques et/ou cinétiques et de transport. Différentes voies de modélisation sont utilisées, thermodynamiques, cinétique ou transfert de masse, de façon couplée ou découplée, permettant de visualiser l'évolution de la croissance et ainsi comprendre le rôle complexe et fortement couplé des phénomènes.

Published
2007

16. Plasma etching of HfO2 at elevated temperatures in chlorine−based chemistry

Author

Helot, M., Chevolleau, T., Vallier, L., Joubert, O., Blanquet, E., Pisch, A., Mangiagalli, P., Lill, T., Laboratoire des technologies de la microélectronique (LTM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), Science et Ingénierie des Matériaux et Procédés (SIMaP), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, [CHIM.MATE]Chemical Sciences/Material chemistry
Published
2006

17. High temperature silicon carbide chemical vapor deposition processes: From pure thermodynamic to mass transport modeling

Author

Blanquet, E. (author), Chaussende, D. (author), Nishizawa, S. (author), Pons, M. (author), Blanquet, E. (author), Chaussende, D. (author), Nishizawa, S. (author), and Pons, M. (author)

Abstract

Over the last twenty years, processes which lead to materials synthesis from a gaseous phase constitute an important technology in many applications fields such as microelectronics or protective coating industry. Due to the complexity of the involved phenomena, computational modeling had been required to improve technological processes and help in designing new equipment. Predictive modeling approaches of transport phenomena and chemistry have been developed with increasing levels of complexity, from pure thermodynamic, kinetic descriptions of the chemistry to mass transport models. The example of SiC epitaxial thin films deposited by a high temperature chemical vapor deposition process illustrates the framework provided by these modeling approaches. This paper reviews some of the recent modeling studies from the authors' research groups.

Published
2006

21. Plasma etching of HfO2 at elevated temperatures in chlorine-based chemistry.

Author

Hélot, M., Chevolleau, T., Vallier, L., Joubert, O., Blanquet, E., Pisch, A., Mangiagalli, P., and Lill, T.

Subjects
HAFNIUM oxide, PLASMA etching, HIGH temperature chemistry, CHLORINE, CHEMICAL reactions, THERMODYNAMICS
Abstract

Plasma etching of HfO2 at an elevated temperature is investigated in chlorine-based plasmas. Thermodynamic studies are performed in order to determine the most appropriate plasma chemistry. The theoretical calculations show that chlorocarbon gas chemistries (such as CCl4 or Cl2–CO) can result in the chemical etching of HfO2 in the 425–625 K temperature range by forming volatile effluents such as HfCl4 and CO2. The etching of HfO2 is first studied on blanket wafers in a high density Cl2–CO plasma under low ion energy bombardment conditions (no bias power). Etch rates are presented and discussed with respect to the plasma parameters. The evolution of the etch rate as function of temperature follows an Arrhenius law indicating that the etching comes from chemical reactions. The etch rate of HfO2 is about 110 Å/min at a temperature of 525 K with a selectivity towards SiO2 of 15. x-ray photoelectron spectroscopy analyses (XPS) reveal that neither carbon nor chlorine is detected on the HfO2 surface, whereas a chlorine-rich carbon layer is formed on top of the SiO2 surface leading to the selectivity between HfO2 and SiO2. A drift of the HfO2 etch process is observed according to the chamber walls conditioning due to chlorine-rich carbon coatings formed on the chamber walls in a Cl2–CO plasma. To get a very reproducible HfO2 etch process, the best conditioning strategy consists in cleaning the chamber walls with an O2 plasma between each wafer. The etching of HfO2 is also performed on patterned wafers using a conventional polysilicon gate. The first result show a slight HfO2 foot at the bottom of the gate and the presence of hafnium oxide-based residues in the active areas. [ABSTRACT FROM AUTHOR]

Published
2006
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22. International collaborative follow-up investigation of graduating high school students’ understandings of the nature of scientific inquiry: is progress Being made?

Author

Lederman, J. S., Lederman, N. G., Bartels, S., Jimenez, J., Acosta, K., Akubo, M., Aly, S., de Andrade, M. A. B. S., Atanasova, M., Blanquet, E., Blonder, R., Brown, P., Cardoso, R., Castillo-Urueta, P., Chaipidech, P., Concannon, J., Dogan, O. K., El-Deghaidy, H., Elzorkani, A., Ferdous, T., Fukuda, N., Gaigher, E., Galvis-Solano, L., Gao, Q., Guo, S., Gwekwerere, Y., Gyllenpalm, J., Al-Lal, S. Hamed, Han-Tosunoglu, C., Hattingh, A., Holliday, G., Huang, X., Irez, S., Jiménez, J., Kay, G., Koumara, A., Kremer, K., Kuo, P.-C., Lavonen, J., Leung, J. S. C., Liao, Z., Librea-Carden, M. R., Lin, S.-F., Liu, C., Liu, E., Liu, S.-Y., Mamlok-Naaman, R., Mcdonald, C. V., Möller, A., Morales, M., Mulvey, B. K., Neumann, I., Neurohr, A.-L., Pan, Y., Panjaburee, P., Penn, M., Plakitsi, K., Picholle, E., Ramnarain, U., Raykova, Z., Rundgren, C.-J., Salonen, S., Santibáñez-Gómez, D., Schwartz, R., Sharma, R., Srisawasdi, N., Takiveikata, S., Urueta-Ortiz, T., Vitlarov, K., Voitle, F., and Wishart, J.

Subjects
4. Education
Abstract

Understandings of the nature of scientific inquiry (NOSI), as opposed to engaging students in inquiry learning experiences, are included in science education reform documents around the world. However, little is known about what students have learned about NOSI during their pre-college school years. The purpose of this large-scale follow-up international project (i.e. 32 countries and regions, spanning six continents and including 3917 students for the high school sample) was to collect data on what exiting high school students have learned about NOSI. Additionally, the study investigated changes in 12th grade students’ NOSI understandings compared to seventh grade (i.e. 20 countries and regions) students’ understandings from a prior investigation [Lederman et al. (2019). An international collaborative investigation of beginning seventh grade students’ understandings of scientific inquiry: Establishing a baseline. Journal of Research in Science Teaching, 56(4), 486–515. https://doi.org/10.1002/tea.21512]. This study documents and discusses graduating high school students’ understandings and compares their understandings to seventh grade students’ understandings of the same aspects of scientific inquiry for each country. It is important to note that collecting data from each of the 130+ countries globally was not feasible. Similarly, it was not possible to collect data from every region of each country. A concerted effort was made, however, to provide a relatively representative picture of each country and the world.

23. International collaborative follow-up investigation of graduating high school students’ understandings of the nature of scientific inquiry: is progress Being made?

Author

Lederman, J. S., Lederman, N. G., Bartels, S., Jimenez, J., Acosta, K., Akubo, M., Aly, S., de Andrade, M. A. B. S., Atanasova, M., Blanquet, E., Blonder, R., Brown, P., Cardoso, R., Castillo-Urueta, P., Chaipidech, P., Concannon, J., Dogan, O. K., El-Deghaidy, H., Elzorkani, A., Ferdous, T., Fukuda, N., Gaigher, E., Galvis-Solano, L., Gao, Q., Guo, S., Gwekwerere, Y., Gyllenpalm, J., Al-Lal, S. Hamed, Han-Tosunoglu, C., Hattingh, A., Holliday, G., Huang, X., Irez, S., Jiménez, J., Kay, G., Koumara, A., Kremer, K., Kuo, P.-C., Lavonen, J., Leung, J. S. C., Liao, Z., Librea-Carden, M. R., Lin, S.-F., Liu, C., Liu, E., Liu, S.-Y., Mamlok-Naaman, R., Mcdonald, C. V., Möller, A., Morales, M., Mulvey, B. K., Neumann, I., Neurohr, A.-L., Pan, Y., Panjaburee, P., Penn, M., Plakitsi, K., Picholle, E., Ramnarain, U., Raykova, Z., Rundgren, C.-J., Salonen, S., Santibáñez-Gómez, D., Schwartz, R., Sharma, R., Srisawasdi, N., Takiveikata, S., Urueta-Ortiz, T., Vitlarov, K., Voitle, F., and Wishart, J.

Subjects
4. Education
Abstract

Understandings of the nature of scientific inquiry (NOSI), as opposed to engaging students in inquiry learning experiences, are included in science education reform documents around the world. However, little is known about what students have learned about NOSI during their pre-college school years. The purpose of this large-scale follow-up international project (i.e. 32 countries and regions, spanning six continents and including 3917 students for the high school sample) was to collect data on what exiting high school students have learned about NOSI. Additionally, the study investigated changes in 12th grade students’ NOSI understandings compared to seventh grade (i.e. 20 countries and regions) students’ understandings from a prior investigation [Lederman et al. (2019). An international collaborative investigation of beginning seventh grade students’ understandings of scientific inquiry: Establishing a baseline. Journal of Research in Science Teaching, 56(4), 486–515. https://doi.org/10.1002/tea.21512]. This study documents and discusses graduating high school students’ understandings and compares their understandings to seventh grade students’ understandings of the same aspects of scientific inquiry for each country. It is important to note that collecting data from each of the 130+ countries globally was not feasible. Similarly, it was not possible to collect data from every region of each country. A concerted effort was made, however, to provide a relatively representative picture of each country and the world.

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