4 results on '"Boyko, Vitaliy"'
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2. Nanostructured Molecular–Network Arsenoselenides from the Border of a Glass-Forming Region: A Disproportionality Analysis Using Complementary Characterization Probes.
- Author
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Shpotyuk, Oleh, Hyla, Malgorzata, Ingram, Adam, Shpotyuk, Yaroslav, Boyko, Vitaliy, Demchenko, Pavlo, Wojnarowska-Nowak, Renata, Lukáčová Bujňáková, Zdenka, and Baláž, Peter
- Subjects
POSITRON annihilation ,X-ray powder diffraction ,BINARY metallic systems ,RAMAN scattering ,BORDERLANDS ,POSITRONIUM - Abstract
Binary As
x Se100−x alloys from the border of a glass-forming region (65 < x < 70) subjected to nanomilling in dry and dry–wet modes are characterized by the XRPD, micro-Raman scattering (micro-RS) and revised positron annihilation lifetime (PAL) methods complemented by a disproportionality analysis using the quantum–chemical cluster modeling approach. These alloys are examined with respect to tetra-arsenic biselenide As4 Se2 stoichiometry, realized in glassy g-As65 Se35 , glassy–crystalline g/c-As67 Se33 and glassy–crystalline g/c-As70 Se30 . From the XRPD results, the number of rhombohedral As and cubic arsenolite As2 O3 phases in As-Se alloys increases after nanomilling, especially in the wet mode realized in a PVP water solution. Nanomilling-driven amorphization and reamorphization transformations in these alloys are identified by an analysis of diffuse peak halos in their XRPD patterning, showing the interplay between the levels of a medium-range structure (disruption of the intermediate-range ordering at the cost of an extended-range one). From the micro-RS spectroscopy results, these alloys are stabilized by molecular thioarsenides As4 Sen (n = 3, 4), regardless of their phase composition, remnants of thioarsenide molecules destructed under nanomilling being reincorporated into a glass network undergoing a polyamorphic transition. From the PAL spectroscopy results, volumetric changes in the wet-milled alloys with respect to the dry-milled ones are identified as resulting from a direct conversion of the bound positron–electron (Ps, positronium) states in the positron traps. Ps-hosting holes in the PVP medium appear instead of positron traps, with ~0.36–0.38 ns lifetimes ascribed to multivacancies in the As-Se matrix. The superposition of PAL spectrum peaks and tails for pelletized PVP, unmilled, dry-milled, and dry–wet-milled As-Se samples shows a spectacular smoothly decaying trend. The microstructure scenarios of the spontaneous (under quenching) and activated (under nanomilling) decomposition of principal network clusters in As4 Se2 -bearing arsenoselenides are recognized. Over-constrained As6·(2/3) ring-like network clusters acting as pre-cursors of the rhombohedral As phase are the main products of this decomposition. Two spontaneous processes for creating thioarsenides with crystalline counterparts explain the location of the glass-forming border in an As-Se system near the As4 Se2 composition, while an activated decomposition process for creating layered As2 Se3 structures is responsible for the nanomilling-driven molecular-to-network transition. [ABSTRACT FROM AUTHOR]- Published
- 2024
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3. Molecular-Network Transformations in Tetra-Arsenic Triselenide Glassy Alloys Tuned within Nanomilling Platform.
- Author
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Shpotyuk, Oleh, Hyla, Malgorzata, Shpotyuk, Yaroslav, Lukáčová Bujňáková, Zdenka, Baláž, Peter, Demchenko, Pavlo, Kozdraś, Andrzej, Boyko, Vitaliy, and Kovalskiy, Andriy
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METALLIC glasses ,POWER transmission ,GLASS analysis ,THERMAL analysis ,BALL mills - Abstract
Polyamorphic transformations driven by high-energy mechanical ball milling (nanomilling) are recognized in a melt-quenched glassy alloy of tetra-arsenic triselenide (As
4 Se3 ). We employed XRPD analysis complemented by thermophysical heat-transfer and micro-Raman spectroscopy studies. A straightforward interpretation of the medium-range structural response to milling-driven reamorphization is developed within a modified microcrystalline model by treating diffuse peak-halos in the XRPD patterns of this alloy as a superposition of the Bragg-diffraction contribution from inter-planar correlations, which are supplemented by the Ehrenfest-diffraction contribution from inter-atomic and/or inter-molecular correlations related to derivatives of thioarsenide As4 Sen molecules, mainly dimorphite-type As4 Se3 ones. These cage molecules are merely destroyed under milling, facilitating the formation of a polymerized network with enhanced calorimetric heat-transfer responses. Disruption of intermediate-range ordering, due to weakening of the FSDP (the first sharp diffraction peak), accompanied by an enhancement of extended-range ordering, due to fragmentation of structural entities responsible for the SSDP (the second sharp diffraction peak), occurs as an interplay between medium-range structural levels in the reamorphized As4 Se3 glass alloy. Nanomilling-driven destruction of thioarsenide As4 Sen molecules followed by incorporation of their remnants into a glassy network is proved by micro-Raman spectroscopy. Microstructure scenarios of the molecular-to-network polyamorphic transformations caused by the decomposition of the As4 Se3 molecules and their direct destruction under grinding are recognized by an ab initio quantum-chemical cluster-modeling algorithm. [ABSTRACT FROM AUTHOR]- Published
- 2024
- Full Text
- View/download PDF
4. Basics of circuitry of electronic systems
- Author
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Boyko, Vitaliy Ivanovich, Zhujkov, Valeriy Yakovich, Spivak, Victor Michaylovich, Zori, Anatoliy Anatoliyvich, Tereschenko, Tetyana Olexandrivna, Sheliagin, Volodimir Dmitrovich, and Національний технічний університет України «Київський політехнічний інститут імені Ігоря Сікорського»
- Subjects
analog ,electronic systems ,digital ,CMOS ,Hardware_INTEGRATEDCIRCUITS ,621.382.2/.3+004(075.32) ,types ,semiconductor devices ,circuits of TTL ,MOS ,Hardware_LOGICDESIGN - Abstract
Basics of circuitry are stated, principles of operation are considered, it is given calculations of analog, digital and pulse devices of electronic systems, based on semiconductor devices, integrated operational amplifiers and integrated logic circuits of TTL, MOS, CMOS types, construction principles of systems of control by electronics devices based on microprocessors and microcontrollers. For students of institutions of higher education. It can be useful for specialists on electronic engineering, specializing in the area of development, fabrication and maintenance of electronic systems and devices.
- Published
- 2008
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