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One-dimensional (1D) single crystalline tellurium (Te) micro- and nanostructures were successfully prepared using thermal evaporation with a metallic Te powder. We found that the morphologies of the Te structures evolved from microrods to nanorods and finally tubular nanostructures with increasing growth temperatures of 500, 600, and 700 °C. Our results strongly suggest that the growth temperature, which highly depends on the formation of a two-dimensional (2D) Te microcrystal layer on the substrate, plays an important role in determining the surface morphology and the crystal orientation of the Te micro- and nanostructures.

We demonstrated that manganese (Mn)-doped GaN nanowires (NWs) exhibit p-type characteristics using current–voltage (I–V) characteristics in both heterojunction p–n structures (GaN:Mn NWs/n-Si substrate) and p–p structures (GaN:Mn NWs/p-Si). The heterojunction p–n diodes were formed by the coupling of the Mn-doped GaN NWs with an n-Si substrate by means of an alternating current (AC) dielectrophoresis-assisted assembly deposition technique. The GaN:Mn NWs/n-Si diode showed a clear current-rectifying behavior with a forward voltage drop of 2.4 V to 2.8 V, an ideality factor of 30 to 37, and a parasitic resistance in the range of 93 kΩ to 130 kΩ. On the other hand, we observed that other heterojunction structures (GaN:Mn NWs/p-Si) showed no rectifying behaviors as seen in p–p junction structures.