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Additional file 1: Table S1. The sequences of primers of qPCR. Figure S1. A peroneal nerve injury (PNI) model was successfully established. Figure S2. Transfection efficiency of Ezrin overexpression or knockdown in myoblast cells. Figure S3. Transfection efficiency of L-Periaxin overexpression or knockdown into C2C12 myoblast cells. Figure S4. Low levels of L-Periaxin were required for Ezrin to activate MyoG/MEF2C-mediated myoblast differentiation/fusion. Figure S5. The traits of L-Periaxin expression during myoblast differentiation. Figure S6. Ezrin regulated myoblast differentiation and myofiber specialization. Figure S7. Ezrin regulated myoblast differentiation and fusion through the PKA signaling pathway. Figure S8. Ezrin regulated myoblast differentiation and fusion through the PKA signaling pathway. Figure S9. NFAT nuclear translocation in Ezrin-mediated myoblast differentiation/fusion. Figure S10. NFATs involved in Ezrin-mediated myoblast differentiation/fusion. Figure S11. Ezrin regulated myoblast differentiation and fusion through the NFAT-MyoD/MEF2C signaling pathway.

Figure S1. Continuous single-dose ISO obviously inhibited C2C12 cell differentiation and myoblast fusion than single-dose ISO. Figure S2. Continuous ISO stimulation altered myoblast fusion competence of myotube during C2C12 cell differentiation. Figure S3. Continuous single ISO involved in C2C12 cell differentiation and muscle fiber types through FoxO1 signaling. Figure S4. Continuous single ISO did not alter levels of PKA α cat, PKA α/β/ϒ cat, PKA ϒ cat in C2C12 cell differentiation. (DOCX 519 kb)

Vanadium dioxide (VO2) thin film have been fabricated on the ZnO-doped Al conductive glass (AZO) substrates by DC magnetron sputtering and after thermal annealing. Effect of different annealing temperature and time olunation on the VO2/AZO composite films has been studied, then the structure, components and optical-electrical properties of the composite films are tested and analyzed by suitable instruments. Results show that the AZO film deposited on the conductive glass substrate dose not change the preferred orientation growth of the VO2 thin film, but its surface morphology characteristics are changed. Compared with those fabricated on ordinary glass substrates by the same processes and conditions, the phase transition temperature of the VO2/AZO composite film is decreased by about 25 ℃, and the width of thermal hysteresis is narrowed to about 6 ℃. Before and after phase transition, the visible light transmittance remains higher than 50%, and the infrared transmittances at a wavelength of 1500nm are 55% and 21% respectively. Furthermore, the resistivity rangeability is also up to three orders of magnitude before and after phase transition. In conclusion, the VO2/AZO composite films are easy to be fabricated and have a high degree of stability, smooth ness and compact surface morphology, thus they may be used to make new photoelectric devices

In order to obtain low phase transition temperature and superior thermochromic optical material, W-doped VO2/FTO composite thin films are prepared by depositing metallic vanadium on FTO (F:SnO2) conductive glass substrate in argon atmosphere at room temperature and then annealed in air ambient. XPS, XRD and SEM are used for analyzing the structures and surface morphologies of the films. The results indicate that no mixed oxides of V, W and F are produced during high-temperature thermal oxidation. W is doped by replacing V atoms. Compared with the pure VO2/FTO composite thin film prepared using the same process, the crystal orientation of W-doped VO2 thin film is not changed and still retains preferred crystal orientation in the (110) direction. The phase transition temperature drops down to about 35 ℃, and the thermal hysteresis loop narrows to 4 ℃. The variation of IR transmittance between the high temperature and the low temperature reaches 28%. SEM results show that the crystallinity of the thin film is improved significantly, showing smooth, compact and uniform surface morphology. This brings about many new opportunities for optoelectronic devices and industrial production.