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This brief reports a study of charge injection-induced edge charge trapping in the gate oxide overlapping the drain extension which has an impact on the drain leakage current. The edge charge trapping is determined for the gate oxide thickness of 6.5, 3.9, and 2.0 nm by using a simple approach to analyze the change of the band-to-band tunneling current measured with a three-terminal gate-controlled-diode configuration. The edge charge trapping has a strong dependence on the gate oxide thickness, and it is different from the charge trapping in the oxide over the channel. A plausible explanation for both the oxide thickness dependence of the edge charge trapping and the difference between the edge charge trapping and the charge trapping over the channel is presented. [ABSTRACT FROM AUTHOR]

In this Letter, an asynchronous spike-driven processor based on gated recurrent neural network algorithm for electrocardiogram (ECG) cardiac arrhythmias detection has been designed. Based on the processor, the proposed ECG detection model, containing a many-to-many gated recurrent unit layer and a fully connected layer, can achieve a high classification overall accuracy of 97.8% using the MIT-BIH arrhythmia database. The processor was fabricated in 55-nm 1P6M CMOS technology. It integrates about 1.4 million logic gates, including 40 KB of on-chip memory within a $4.0\,{\rm mm}^2$4.0mm2 die area. The test chip consumes 6.28 mW at real-time operation frequency (200 MHz) with 1.2 V core supply voltage and $2.65\,{\rm \mu} {\rm W}$2.65μW at 1 kHz. [ABSTRACT FROM AUTHOR]

Abstract: During magnetron sputtering deposition of SrBi2Ta2O9 thin films, oxygen gas is introduced in the deposition chamber to compensate the oxygen loss during sputtering. In this paper, the influence of oxygen partial pressure is systematically investigated in sputtering of Sr0.8Nd0.3Bi2.5Ta2O9+x thin films, using X-ray diffraction, X-ray photoelectron spectroscopy and field emission scanning electron microscopy. The studies confirm that at various oxygen partial pressure Nd3+ ions substitute into the bismuth layered perovskite structure, preferentially at the Sr2+ site. The deposition rate, composition, microstructure and polarization properties of the films highly depend on the oxygen partial pressure. [Copyright &y& Elsevier]

TaN–Cu nanocomposite thin films used as materials for TFR (thin film resistor) were prepared by reactive co-sputtering of Ta and Cu in the plasma of N2 and Ar. After deposition, the films were annealed using rapid thermal processing (RTP) at 400 °C for 2, 4, 8 min, respectively to induce the nucleation and grain growth of Cu. The results reveal that temperature coefficient of resistivity (TCR) values will increase with the increase of Cu content for both the as-deposited and annealed films. The increase of nitrogen will result in higher resistivity and more negative TCR. At a constant nitrogen flow rate, the resistivity and TCR may increase or decrease with the increase of annealing time depending on the Cu content. In general, to reach near-zero TCR value, more copper is needed to compensate the negative effect caused by Ta–N. Thus, electrical properties of thin films can be characterized as functions of N2 flow rate, Cu concentration and annealing time. [Copyright &y& Elsevier]

Adding the effect of surface bond contraction to the Hamiltonian of an extended solid leads to a new mechanism indicating that the blue-shift in the photoluminescence (PL) of CdS and CdSe nanosolids arises from the surface-relaxation-enhanced binding energy and the PL shift depends on the portion of surface atoms of the solid. Consistency between predictions and observations evidences that a surface bond contracts more than it does on a flat surface when the surface curvature increases and that the Cd–Se bond contracts faster than the Cd–S bond when the solid approaches to the lower end of size limit. [ABSTRACT FROM AUTHOR]