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Silicon-based quantum bits with electron spins in quantum dots or nuclear spins on dopants are serious contenders in the race for quantum computation. Added to process integration maturity, the lack of nuclear spins in the most abundant $^{28}$silicon isotope host crystal for qubits is a major asset for this silicon quantum technology. We have grown $^{28}$silicon epitaxial layers (epilayers) with an isotopic purity greater than 99.992 % on 300mm natural abundance silicon crystals. The quality of the mono-crystalline isotopically purified epilayer conforms to the same drastic quality requirements as the natural epilayers used in our pre-industrial CMOS facility. The isotopically purified substrates are now ready for the fabrication of silicon qubits using a state-of-the-art 300 mm Si CMOS-foundries equipment and processes, Comment: 7 pages, 7 figures

Core-clad fibers on the basis of high-purity 1300 ppmw Pr(3+)-doped Ga-Ge-As-Se and 2000 ppmw Pr(3+) -doped In-Ge-As-Se-I glasses have been prepared. The minimum optical losses of the fibers are at the level of 1 dB/m in the wavelength range, where there is no influence of the praseodymium absorption. At present, it is the best result obtained for core-clad rare- earth-doped chalcogenide fibers with high dopant concentration. The fibers exhibit the broadband luminescence in the spectral range of 3.5-5.5 micron. The values of luminescence lifetime at the wavelength of 4.7 micron are within 6.5-8.2 ms closed to those for the bulk glasses obtained previously. Simulation of laser properties for these core-clad fibers in the three-level cascade scheme was carried out. The low level of optical losses experimentally achieved in these fibers is one of main criteria for development of mid-IR fiber systems., Comment: 7 pages, 6 figures, 2 tables. Published in Optical Materials

Experimental and theoretical studies of spectral properties of chalcogenide Ge-S and As-Ge-S glasses and fibers are performed. A broad infrared (IR) luminescence band which covers the 1.2-2.3~$\mu$m range with a lifetime about 6~$\mu$s is discovered. Similar luminescence is also present in optical fibers drawn from these glasses. Arsenic addition to Ge-S glass significantly enhances both its resistance to crystallization and the intensity of the luminescence. Computer modeling of Bi-related centers shows that interstitial Bi$^+$ ions adjacent to negatively charged S vacancies are most likely responsible for the IR luminescence., Comment: 7 pages, 4 figures

Precise measurement of the refractive index of stable silicon isotopes $^{28}$Si, $^{29}$Si, $^{30}$Si single crystals with enrichments above 99.9 at.% and a silicon single crystal $^{nat}$Si of natural isotopic composition is performed with the Fourier-transform interference refractometry method from 1.06 to more than 80 mkm with 0.1 cm$^{-1}$ resolution and accuracy of $2 \times 10^{-5} ... 1 \times 10^{-4}$. The oxygen and carbon concentrations in all crystals are within $5 \times 10^{15}$ cm$^{-3}$ and the content of metal impurities is $10^{-5} ... 10^{-6}$ at.%. The peculiar changes of the refractive index in the phonon absorption region of all silicon single crystals are shown. The coefficients of generalized Cauchy dispersion function approximating the experimental refractive index values all over the measuring range are given. The transmission and Raman spectra are also studied.

Absorption spectra of Ni$^{2+}$ ions in 22WO$_3$--78TeO$_2$ tungstate-tellurite glass were studied and Ni$^{2+}$ extinction coefficient spectral dependence was derived in the 450 -- 2700 nm wavelength range. Computer modeling of the glass structure proved Ni$^{2+}$ ions to be in trigonal-distorted octahedral environment in the tungstate-tellurite glass. Tanabe-Sugano diagram for such an environment was calculated and good description of the observed spectrum of Ni$^{2+}$ ion was obtained. Basing on both absorption spectral range width and the extinction coefficient, nickel should be considered among the most strongly absorbing impurities in the tellurite glasses.