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MXenes stand out from other 2D materials because they combine very good electrical conductivity with hydrophilicity, allowing cost-effective processing as thin films. Therefore, there is a high fundamental interest in unraveling the electronic transport mechanisms at stake in multilayers of the most conducting MXene, Ti$_3$C$_2$T$_x$. Although weak localization (WL) has been proposed as the dominating low-temperature (LT) transport mechanism in Ti$_3$C$_2$T$_x$ thin films, there have been few attempts to model it quantitatively. In this paper, the role of important structural parameters -- thickness, interflake coupling, defects -- on the dimensionality of the LT transport mechanisms in spin-coated Ti$_3$C$_2$T$_x$ thin films is investigated through LT and magnetic field dependent resistivity measurements. A dimensional crossover from 2D to 3D WL is clearly evidenced when the film thickness exceeds the dephasing length $l_\phi$, which is in the $50-100\,\mathrm{nm}$ range. 2D WL can be restored by weakening the coupling between adjacent flakes, the intrinsic thickness of which is lower than $l_\phi$, hence acting as parallel 2D conductors. Alternatively, $l_\phi$ can be reduced down to the $10\,\mathrm{nm}$ range by defects. Our results clearly emphasize the ability of WL quantitative study to give deep insights in the physics of electron transport in MXene thin films.

To investigate the role of the interface state on the physical properties of Schottky contacts, Co/n-Ge Schottky diodes that have undergone various cleaning methods (HF etching and in-situ thermal cleaning) were studied by Transmission Electron Microscopy (TEM), Deep-level Transient Spectroscopy (DLTS) and by a detailed analysis of the temperature dependence of the diodes characteristics. It is shown that Schottky barrier height characteristics are sensitive to the nature of the interface. The strongest Fermi level pinning and the highest spatial inhomogeneities are observed for intimate metal/semiconductor contacts. The presence of a thin oxide interlayer, even of Ge native oxide, allows the Fermi level to be released towards the conduction band and leads to more homogeneous contacts. Finally our results suggest that a pure GeO2 oxide interlayer should present a better depinning efficiency than the native Ge oxide.