37 results on '"Delabie, Annelies"'
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2. Quantification of area-selective deposition on nanometer-scale patterns using Rutherford backscattering spectrometry
3. Characterization of Ru4-xTax (x = 1,2,3) alloy as material candidate for EUV low-n mask
4. Quantified Uniformity and Selectivity of TiO2 Films in 45‐nm Half Pitch Patterns Using Area‐Selective Deposition Supercycles
5. In situ analysis of nucleation reactions during TiCl4/H2O atomic layer deposition on SiO2 and H-terminated Si surfaces treated with a silane small molecule inhibitor
6. Aminosilane small molecule inhibitors for area-selective deposition: Study of substrate-inhibitor interfacial interactions
7. Quantified Uniformity and Selectivity of TiO2 Films in 45‐nm Half Pitch Patterns Using Area‐Selective Deposition Supercycles.
8. Nucleation and growth mechanism for atomic layer deposition of Al2O3 on two-dimensional WS2 monolayer
9. Compatibility between polymethacrylate-based extreme ultraviolet resists and TiO2 area-selective deposition
10. In situ analysis of nucleation reactions during TiCl4/H2O atomic layer deposition on SiO2 and H-terminated Si surfaces treated with a silane small molecule inhibitor.
11. Evaluation of Ta-Co alloys as novel high-k EUV mask absorber
12. Nucleation and growth mechanism for atomic layer deposition of Al2O3 on two-dimensional WS2 monolayer.
13. Pulsed chemical vapor deposition of conformal GeSe for application as an OTS selector
14. Building patterns from the bottom: a complementary approach to lithography
15. Study of the reliability impact of chlorine precursor residues in thin atomic-layer-deposited Hf[O.sub.2] layers
16. Grazing Incidence-X-ray Fluorescence Spectrometry for the Compositional Analysis of Nanometer-Thin High-κDielectric HfO2 Layers
17. Estimation of fixed charge densities in hafnium-silicate gate dielectrics
18. Electrical characteristics of 8 Angstrom EOT Hf[O.sub.2]/TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions
19. Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
20. The reaction of Cu(I)(1S and 3D) with N2O: an ab initio study
21. Evaluating the activation barriers for transition metal N2O reactions
22. Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates.
23. Preface: Atomic Layer Deposition Applications 6
24. Roughness evolution during the atomic layer deposition of metal oxides
25. GaAs clean up studied with synchrotron radiation photoemission
26. Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates
27. Atomic Layer Deposition of High-k Dielectric Layers on Ge and III-V MOS Channels
28. Replacing SiO2 - Material and Processing Aspects of New Dielectrics
29. Atomic layer deposition of hafnium silicate gate dielectric layers
30. Study of the Reliability Impact of Chlorine Precursor Residues in Thin Atomic-Layer-Deposited $\hbox{HfO}_{2}$ Layers
31. Threshold Voltage Control in PMOSFETs with Polysilicon or Fully-Silicided Gates on Hf-based gate dielectric using Controlled Lateral Oxidation
32. The Reaction of Cu(I) (1S and3D) with N2O: An ab Initio Study
33. Theoretical Study of the Structure and Spectroscopic Properties of Cobalt(II) Coordinated to Six-Rings in Zeolites
34. Study of the Reliability Impact of Chlorine Precursor Residues in Thin Atomic-Layer-Deposited HfO2 Layers.
35. Electrical Characteristics of 8-Å EOT Hf02/TaN Low Thermal-Budget n-Channel FETs With Solid-Phase Epitaxially Regrown Junctions.
36. Epitaxial Chemical Vapor Deposition of Silicon on an Oxygen Monolayer on Si(100) Substrates
37. Surface-dependent adsorption and diffusion processes in area-selective deposition of ruthenium : Oppervlakteafhankelijke adsorptie- en diffusieprocessen tijdens de selectieve depositie van ruthenium
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