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7 results on '"Dogmus, Ezgi"'

2. RF GaN Market Broadens Its Appeal with an Appetite for GaN-on-Silicon.

Author

Ghorbel, Aymen, Dogmus, Ezgi, and Chiu, Poshun

Subjects
*GALLIUM nitride
Abstract

The article focuses on the RF GaN (Radio Frequency Gallium Nitride) market and its evolution, particularly with the emergence of GaN-on-Silicon (GaN-on-Si) technology. It discusses how GaN technology has been widely used in the defense and telecom markets, with RF applications predominantly dominated by GaN-on-Silicon Carbide (GaN-on-SiC) devices. It also explores how GaN-on-Si technology is beginning to impact the supply chain and potentially shape future telecom technologies.

Published
2023

3. Low RF losses up to 110 GHz in GaN-on-silicon HEMTs

Author

Pecheux, R, Kabouche, Riad, Dogmus, Ezgi, Linge, A, Zegaoui, Malek, Medjdoub, F, Medjdoub, Farid, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Renatech Network, and Université catholique de Lille (UCL)-Université catholique de Lille (UCL)

Subjects
[SPI]Engineering Sciences [physics], [SPI] Engineering Sciences [physics]
Abstract

International audience; We report on low RF losses at the interface between the epitaxial structure and the silicon substrate (less than 0.8 dB/mm up to 110GHz) of AlN/GaN high electron mobility transistors (HEMTs) grown on silicon substrate. This stateof-the-art performance makes GaN-on-Silicon HEMTs competitive with GaN-on-SiC in terms of parasitic RF losses. Furthermore, a maximum dc output current close to 1 A/mm together with low leakage current of 1 μA/mm and low trapping effects are achieved while using a short gate length of 0.2 μm. The large signal measurements confirmed the high quality of the epitaxy and the device processing as well as the low parasitic RF losses. This is reflected by a high output power density of 4.5 W/mm achieved at 18 GHz.

Published
2017

4. GaN-Based Laser Wireless Power Transfer System

Author

De Santi, Carlo, primary, Meneghini, Matteo, additional, Caria, Alessandro, additional, Dogmus, Ezgi, additional, Zegaoui, Malek, additional, Medjdoub, Farid, additional, Kalinic, Boris, additional, Cesca, Tiziana, additional, Meneghesso, Gaudenzio, additional, and Zanoni, Enrico, additional

Published
2018
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5. InAlGaN/GaN HEMTs at Cryogenic Temperatures

Author

Dogmus, Ezgi, primary, Kabouche, Riad, additional, Lepilliet, Sylvie, additional, Linge, Astrid, additional, Zegaoui, Malek, additional, Ben-Ammar, Hichem, additional, Chauvat, Marie-Pierre, additional, Ruterana, Pierre, additional, Gamarra, Piero, additional, Lacam, Cédric, additional, Tordjman, Maurice, additional, and Medjdoub, Farid, additional

Published
2016
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7. The RF GaN Device Market: A Roller-Coaster Ride.

Author

Chiu, Poshun and Dogmus, Ezgi

Subjects
*GALLIUM nitride, *VSATS (Telecommunication), *TELECOMMUNICATION satellites, CHINA-United States relations
Abstract

The article presents the discussion on analysts at Yole Développement (Yole) predicting the RF GaN device market used in military radar and electronic warfare.

Published
2021

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