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The intensity flatness and wavefront shape in a coherent hard-x-ray beam totally reflected by flat mirrors that have surface bumps modeled by Gaussian functions were investigated by use of a wave-optical simulation code. Simulated results revealed the necessity for peak-to- valley height accuracy of better than 1 nm at a lateral resolution near 0.1 mm to remove high-contrast interference fringes and appreciable wavefront phase errors. Three mirrors that had different surface qualities were tested at the 1 km-long beam line at the SPring-8/Japan Synchrotron Radiation Research Institute. Interference fringes faded when the surface figure was corrected below the subnanometer level to a spatial resolution close to 0.1 mm, as indicated by the simulated results. OCIS codes: 340.7470, 340.6720, 220.4610, 220.4840, 220.5450.

In this paper, we demonstrate CMOS characteristics on a Si(110) surface using surface flattening processes and radical oxidation. A Si(110) surface is easily roughened by OH- ions in the cleaning solution compared with a Si(100) surface. A flat Si(110) surface is realized by the combination of flattening processes, which include a high-temperature wet oxidation, a radical oxidation, and a five-step room-temperature cleaning as a pregateoxidation cleaning, which does not employ an alkali solution. On the flat surface, the current drivability of a p-channel MOSFET on a Si(110) surface is three times larger than that on a Si(100) surface, and the current drivability of an n-channel MOSFET on a Si(110) surface can be improved compared with that without the flattening processes and alkali-free cleaning. The 1/f noise of the n-channel MOSFET and p-channel MOSFET on a flattened Si(110) surface is one order of magnitude less than that of a conventional n-channel MOSFET on a Si(100) surface. Thus, a high-speed and low-flicker-noise p-channel MOSFET can be realized on a flat Si(110) surface. Furthermore, a CMOS implementation in which the current drivabilities of the p-channel and n-channel MOSFETs are balanced can be realized (balanced CMOS). These advantages are very useful in analog/digital mixed-signal circuits. [ABSTRACT FROM AUTHOR]

Polytetrafluoroethylene (PTFE) has high-frequency characteristics and low transmission loss, and is expected to be used as a substrate material of printed wiring board for high-frequency applications. Meanwhile, silicone gel has superior properties such as attaching/detaching, weather resistance, and human safety. If the PTFE and silicone gel can be strongly adhered to, they can be applied to internet of things (IoT) devices that can be attached and detached freely. However, adhesion between PTFE, which has poor adhesion, and silicone gel, which has low mechanical strength, is difficult and has not been reported. In this study, PTFE was modified with heat-assisted plasma treatment, and silicone gel was treated with oleophilic SiO 2 powder to improve elastic modulus and modified with plasma jet treatment, and then bonded without adhesive. The adhesion strength of PTFE/silicone gel assembly was 1.13 N mm -1 when treated moderately, but only 0.01 N mm -1 when untreated and treated excessively. To investigate the factors causing the difference in the adhesion strength, the surface of silicone gel was evaluated by water contact angle measurement, Fourier transform infrared spectroscopy, and confocal laser scanning microscopy. When treated moderately, hydrophilic functional groups and cross-linking were most frequently increased. Furthermore, when treated excessively, surface degradation was observed, which was expected to lower the adhesion strength. The adhesive-free bonding between PTFE and silicone gel can open a new path for developing IoT devices that can be freely attached and detached., Competing Interests: The authors declare no conflict of interest., (This journal is © The Royal Society of Chemistry.)