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In this work, we investigate the correlation between tensile residual stress and Q-factor of double-clamped beams fabricated on epitaxial 3C-SiC layers grown on both and silicon substrates, using a completely optical measurement setup to measure the Q-factor of the resonators and the residual stress of the layers by means of purposely designed micromachined test structures. From the measurements, a clear correlation appears between the residual stress of the SiC layer and the Q-factor of the resonators, with Q-factor values above half a million for resonators fabricated on substrates, showing residual stress around 1 GPa.

In this work the purpose of the simulations is to optimize a new large volume Silicon Carbide (SiC) detector for 14.1 MeV neutrons. The device has an active thickness obtained by epitaxial growth and an active area of 25 mm2. In the first step of the simulations we compare SiC detector performance to Diamond and Silicon detectors, with the same geometric features. In the second step of the simulations we have found the best solution to improve the response of the detector for a fixed epitaxial layer thickness using an overlayer of aniline (C6H7N).

3C silicon carbide is a semiconductor with remarkable properties, making it ideal for the development of long lasting devices, working in harsh environments and under high particle flows. The most significant obstacle to its wider diffusion is the presence of extended, bidimensional and linear defects in its crystal lattice. The purpose of this research is to automatically recognize defects from a TEM image by algorithm that calculates distances and angles.

Silicon Carbide (SiC) has been demonstrated as both a bio- and neuro-compatible wide-band-gap semiconductor with a high thermal conductivity and magnetic susceptibility and may be potentially compatible with human brain tissue. Two single-crystal, solid-state forms of SiC have been used to create monolithic intracortical neural implants (INI) without using physiologically exposed metals or polymers, thus eliminating many known reliability challenges in-vivo through a single, homogenous material. Amorphous SiC (a-SiC) was used to insulate 16-channel functional INI and the electrochemical and MRI compatibility (7T) performance were measured. 4H-SiC interfaces were fabricated using homoepitaxy,alternating epitaxial films of n-type and p-type forming an isolating PN junction which prevents substrate leakage current between the 16 adjacent electrodes and traces fabricated which were formed using deep-reactive ion etching (DRIE). 3C-SiC interfaces were fabricated in a similar fashion, but the epitaial conductive layers were grown on on both bulk crystalline (100) silicon and SOI wafers. In both cases a conformal coating of a-SiC was used as the top-side insulator and windows opened using RIE to allow electrochemical interaction. Electrochemical charaterization achieved through electrochemcial impedance spectroscopy (EIS) and cyclic voltammetry (CV) indicates performance on par, or exceeding, that of Pt reference electrodes with the same form fit. While magnetic resonance imaging (MRI) is an essential, non-contact method used to investigate issues with the nervous system, the high field MRI (e.g., 3 T and higher) necessary for proper diagnosis can be a safety issue for patients with INI due to inductive coupling between the powerful electromagnetic fields and the implanted device. This results in having to use lower electromagnetic field power (less than 1.5T), and therefore lower resolution, which hinders diagnostic prognosis for these patients. In this work the MRI compliance of epitaxial, monolithic SiC INI was studied. The specific absorption rate (SAR), induced heating, and image artifacts caused by the portion of the implant within a brain tissue phantom located in a 7 T small animal MRI machine were estimated and measured via finite element method (FEM) and Fourier-based simulations. Both the simulation and experimental results revealed that free-standing 3C-SiC films had no observable image artifacts compared to silicon and platinum reference materials inside the MRI at 7 T while FEM simulations predicted an ~30% SAR reduction for 3C-SiC compared to Pt. These initial simulations and experiments indicate a SiC monolithic INI may effectively reduce MRI induced heating and image artifacts in high field MRI.

This paper presents a macro-and nanoscale electrical investigation of Schottky and metal-oxide junctions with hetero-epitaxial 3C-SiC layers grown on Si. Statistical current-density-voltage (J-V) characterization of Pt/3C-SiC Schottky diodes showed an increase of the reverse leakage current with increasing the devices diameters. Furthermore, C-V and J-V analyses of SiO2/3C-SiC capacitors revealed non-idealities of the thermal oxide, such as a high trapped positive charge (3×1012 cm−2) and a reduced breakdown field (EBD=6.5 MV/cm) compared to ideal SiO2. Nanoscale electrical characterizations by conductive atomic force microscopy (CAFM) and scanning capacitance microscopy (SCM) allowed to shed light on the origin of non-ideal behavior of Schottky and thermal oxide junctions, by correlating the morphological features associated to 3C-SiC crystalline defects with local current transport and carrier density.

In the present work a deep characterization of 4H-SiC epi-layer was done. A thick layer was epitaxially grown through chemical vapor deposition (CVD) process in a horizontal hot-wall reactor in order to obtain a 250 microns thick epi-layer. This sample will be used as particle detector in hostile environments such as neutron detection in a nuclear fusion reactor. Raman and Photoluminescence (PL) spectroscopy have been used in order to evaluate the general status of epitaxy and, with the support of the Time Resolved Photoluminescence, also important properties such as carrier lifetime and diffusion length have been evaluated. Carrier lifetime evaluation before and after a thermal oxidation process at 1400° C for 48h was estimated, by considering a lifetime increment after oxidation process, due to the decrease of carbon vacancies. Finally, the influence of stacking fault (SF) defects on carrier lifetime was evaluated observing a decrease of the lifetime for the defects at 430 nm (2.88 eV) for both oxidated and non-oxidated samples.

One setback that hinders the breakthrough of cubic silicon carbide is the lack of suitable seeding material for sublimation growth methods such as PVT. We present the growth of large area cubic silicon carbide material, up to a diameter of 100 mm, with a sublimation growth process called close spaced PVT (CS-PVT). Freestanding 3C‑SiC seeding layers were grown by a homoepitaxial CVD process. Subsequently CS-PVT was used to grow crystals up to a thickness of 1 mm. To prevent backside sublimation a carbon containing layer was applied as protection. Due to the presence of a wafer bow as well as a rough backside of the used seeds additional effort was necessary to apply the coating. After growth no visible curvature was present independent of the grown layer thickness and sample size. Raman spectroscopy was performed on the seeds and grown crystals, showing that the overall stress level of the material was reduced by CS‑PVT.

This paper discusses a novel annealing technique for 4H-SiC implants which involves the use of pulsed XeCl laser (l=308 nm). In particular, an absorbing graphitic coating is used to protect the sample from surface atoms desorption or phase separation. Both conventional furnace annealing and laser annealing on P and Al implants, commonly employed for source and body in metal-oxide-semiconductor field-effect transistors (MOSFETs), were examined through Transmission Electron Microscopy (TEM), u-Raman spectroscopy and Scanning Electron Microscopy (SEM). It is shown that the implant activated through traditional thermal annealing at 1650 °C for 30 min has a large network of dislocation loops, while they do not appear to be present in the laser annealed implant. Through Raman spectroscopy and SEM investigations both the crystalline quality of the laser annealed sample and the integrity of the surface were attested.

In this paper, we used micro-Raman spectroscopy in cross-section to investigate the effect of different doping on the distribution of stress in the silicon substrate and the grown 3C-SiC film. The 3C-SiC films with a thickness up to 10 μm were grown on Si (100) substrates in a horizontal hot-wall chemical vapor deposition (CVD) reactor. To quantify the influence of doping on the stress distribution, samples were non-intentionally doped (NID, dopant incorporation below 1016cm−3), strongly n-type doped ([N] > 1019cm−3), or strongly p-type doped ([Al] > 1019cm−3). Sample NID was also grown on Si (111). In silicon (100), we observed that the stress at the interface is always compressive. In 3C-SiC, instead, we observed that the stress at the interface is always tensile and remains so in the first 4 µm. In the remaining 6 µm, the type of stress varies according to the doping. In particular, for 10 μm thick samples, the presence of an n-doped layer at the interface maximizes the stress in the silicon (~700 MPa) and in the 3C-SiC film (~250 MPa). In the presence of films grown on Si(111), 3C-SiC shows a compressive stress at the interface and then immediately becomes tensile following an oscillating trend with an average value of 412 MPa.

The review on bulk growth of SiC includes a basic overview on the widely used physical vapor transport method for processing of 4H-SiC boules as well as the discussion of three current research topics: (a) Sublimation bulk growth of large area, freestanding cubic SiC, (b) in-situ Visualization of the PVT Process using 2D and 3D X-ray based imaging and (c) prediction of dislocation formation and motion in SiC using a continuum model of dislocation dynamics (CDD).

This study offers a comprehensive examination of the behavior of 3C-SiC crystals grown on 4° off-axis (100) Si substrates with different off-axis angles along and for N and Al doping, respectively. The investigation takes advantage of molten KOH etching to conduct an in-depth investigation of the average density and size of the SFs inside the crystal for both n- and p-type doped 3C-SiC epitaxial layers. Moreover, 3C-SiC grown on a off-cut substrate was revealed to have a greater concentration of SFs due to the absence of self-annihilation along the plane (-1-10). Considering two different doping ranges suitable for IGBTs and MOSFETs development, the impact of doping and off-angle on the crystal quality, concentration, and length distribution of SFs was then investigated in order to quantify the influence of N and Al incorporation on the structural and optical characteristics of the semiconductor. It turned out that under heavy nitrogen doping (~1019 cm-3), when the dopant concentration grew, the average length of the stacking faults (SFs) expanded while their density dropped.

In this review paper, several new approaches about the 3C-SiC growth are been presented. In fact, despite the long research activity on 3C-SiC, no devices with good electrical characteristics have been obtained due to the high defect density and high level of stress. To overcome these problems, two different approaches have been used in the last years. From one side, several compliance substrates have been used to try to reduce both the defects and stress, while from another side, the first bulk growth has been performed to try to improve the quality of this material with respect to the heteroepitaxial one. From all these studies, a new understanding of the material defects has been obtained, as well as regarding all the interactions between defects and several growth parameters. This new knowledge will be the basis to solve the main issue of the 3C-SiC growth and reach the goal to obtain a material with low defects and low stress that would allow for realizing devices with extremely interesting characteristics. Funding Agencies|European UnionEuropean Commission [720827]

This AIP article is published under license by AIP: https://publishing.aip.org/wp-content/uploads/2019/10/AIPP-Author-License.pdf A low p-n built-in potential (1.75 V) makes 3C-SiC an attractive choice for medium voltage bipolar or charge balanced devices. Until recently, most 3C-SiC had been grown on Si, and power device fabrication had, therefore, been hindered by issues, such as high defect density and limited processing temperature, while devices were necessarily limited to lateral structures. In this work, we present the fabrication and characterization of a vertical PiN diode using bulk 3C-SiC material. A p-type ohmic contact was obtained on Al implanted regions with a specific contact resistance ∼10 Ω cm. The fabricated PiN diode has a low forward voltage drop of 2.7 V at 1000 A/cm, and the on-off ratio at ±3 V is as high as 10. An ideality factor of 1.83-1.99 was achieved, and a blocking voltage of ∼110 V was observed using a single-zone junction termination design.

NUMEN proposes an innovative technique to access the nuclear matrix elements entering the expression of the lifetime of the double beta decay by cross-section measurements of heavy-ion induced Double Charge Exchange (DCE) reactions. Despite the fact that the two processes, namely neutrinoless double beta decay and DCE reactions, are triggered by the weak and strong interaction respectively, important analogies are suggested. The basic point is the coincidence of the initial and final state many-body wave functions in the two types of processes and the formal similarity of the transition operators. The main experimental tools for this project are the K800 Superconducting Cyclotron and MAGNEX spectrometer at the INFN-LNS laboratory. However, the tiny values of DCE cross-sections and the resolution requirements demand beam intensities much higher than those manageable with the present facility. The on-going upgrade of the INFN-LNS facilities promoted by the POTLNS a project in this perspective is intimately connected to the NUMEN project. This paper describes the solutions proposed as a result of the R&D activity performed during the recent years. The goal is to develop suitable technologies allowing for the measurements of DCE cross-section under extremely high beam intensities. a PIR01_00005 — potenziamento dell’infrastruttura di ricerca Laboratori Nazionali del Sud per la produzione di fasci di ioni ad alta intensitá.

The use of wide-band-gap solid-state neutron detectors is expanding in environments where a compact size and high radiation hardness are needed, such as spallation neutron sources and next-generation fusion machines. Silicon carbide is a very promising material for use as a neutron detector in these fields because of its high resistance to radiation, fast response time, stability and good energy resolution. In this paper, measurements were performed with neutrons from the ISIS spallation source with two different silicon carbide detectors together with stability measurements performed in a laboratory under alpha-particle irradiation for one week. Some consideration to the impact of the casing of the detector on the detector’s counting rate is given. In addition, the detector response to Deuterium-Deuterium (D-D) fusion neutrons is described by comparing neutron measurements at the Frascati Neutron Generator with a GEANT4 simulation. The good stability measurements and the assessment of the detector response function indicate that such a detector can be used as both a neutron counter and spectrometer for 2–4 MeV neutrons. Furthermore, the absence of polarization effects during neutron and alpha irradiation makes silicon carbide an interesting alternative to diamond detectors for fast neutron detection.

An essential method to investigate neuromodulation effects of an invasive neural interface (INI) is magnetic resonance imaging (MRI). Presently, MRI imaging of patients with neural implants is highly restricted in high field MRI (e.g., 3 T and higher) due to patient safety concerns. This results in lower resolution MRI images and, consequently, degrades the efficacy of MRI imaging for diagnostic purposes in these patients. Cubic silicon carbide (3C-SiC) is a biocompatible wide-band-gap semiconductor with a high thermal conductivity and magnetic susceptibility compatible with brain tissue. It also has modifiable electrical conductivity through doping level control. These properties can improve the MRI compliance of 3C-SiC INIs, specifically in high field MRI scanning. In this work, the MRI compliance of epitaxial SiC films grown on various Si wafers, used to implement a monolithic neural implant (all-SiC), was studied. Via finite element method (FEM) and Fourier-based simulations, the specific absorption rate (SAR), induced heating, and image artifacts caused by the portion of the implant within a brain tissue phantom located in a 7 T small animal MRI machine were estimated and measured. The specific goal was to compare implant materials, thus, the effect of leads outside the tissue was not considered. The results of the simulations were validated via phantom experiments in the same 7 T MRI system. The simulation and experimental results revealed that free-standing 3C-SiC films had little to no image artifacts compared to silicon and platinum reference materials inside the MRI at 7 T. In addition, FEM simulations predicted an ~30% SAR reduction for 3C-SiC compared to Pt. These initial simulations and experiments indicate an all-SiC INI may effectively reduce MRI induced heating and image artifacts in high field MRI. In order to evaluate the MRI safety of a closed-loop, fully functional all-SiC INI as per ISO/TS 10974:2018 standard, additional research and development is being conducted and will be reported at a later date.

Domain boundaries (DBs) generated during the growth of cubic silicon carbide (3C-SiC) on (001) Si and their interaction with stacking faults (SFs) were studied in this work. Direct scanning transmi...

Stacking Faults (SFs) are the main defect of 3C-SiC material and in this work a detailed study of this typology of defect is presented. We studied the behavior of SFs with High Resolution XRD and STEM analysis. The homo-epitaxial growth was proposed as a solution for the reduction of SFs density in 3C-SiC material and the influence of the growth condition on the SFs density was studied. The knowledge of the mechanism of SFs reduction is crucial for the development of a high quality material for devices fabrication.

3C-SiC is an emerging material for MEMS systems thanks to its outstanding mechanical properties (high Young’s modulus and low density) that allow the device to be operated for a given geometry at higher frequency. The mechanical properties of this material depend strongly on the material quality, the defect density, and the stress. For this reason, the use of SiC in Si-based microelectromechanical system (MEMS) fabrication techniques has been very limited. In this work, the complete characterization of Young’s modulus and residual stress of monocrystalline 3C-SiC layers with different doping types grown on and oriented silicon substrates is reported, using a combination of resonance frequency of double clamped beams and strain gauge. In this way, both the residual stress and the residual strain can be measured independently, and Young’s modulus can be obtained by Hooke’s law. From these measurements, it has been observed that Young’s modulus depends on the thickness of the layer, the orientation, the doping, and the stress. Very good values of Young’s modulus were obtained in this work, even for very thin layers (thinner than 1 μm), and this can give the opportunity to realize very sensitive strain sensors.

The presence of extended bi-dimensional defects is one of the key issues that hinder the use of wide band-gap materials hetero-epitaxially grown on silicon. In this work, we investigate, by STEM measurements and molecular dynamic simulations, the structure of two of the most important extended defect affecting the properties of cubic silicon carbide, 3C-SiC, hetero-epitaxially grown on (001) silicon substrates: (1) stacking faults (SFs) with their bounding threading dislocation arms, even along with unusual directions, and (2) inverted domain boundaries (IDBs). We found that these two defects are strictly correlated: IDBs lying in {111} planes are intrinsically coupled to one or more SFs. Moreover, we observed that threading partial dislocations (PDs), limiting the SFs, appear to have non-conventional line directions, such as [112], [123], and [134]. Molecular dynamics simulations show that [110] and [112] directions allow for stable dislocation structures, while in the unusual [123] and [134] directions, the PDs are composed of zig-zag dislocation lines in the [112] and [110] directions.

This work describes the development of a new method for ion implantation induced crystal damage recovery using multiple XeCl (308 nm) laser pulses with a duration of 30 ns. Experimental activity was carried on single phosphorus (P) as well as double phosphorus and aluminum (Al) implanted 4H-SiC epitaxial layers. Samples were then characterized through micro-Raman spectroscopy, Photoluminescence (PL) and Transmission Electron Microscopy (TEM) and results were compared with those coming from P implanted thermally annealed samples at 1650&ndash, 1700&ndash, 1750 &deg, C for 1 h as well as P and Al implanted samples annealed at 1650 &deg, C for 30 min. The activity outcome shows that laser annealing allows to achieve full crystal recovery in the energy density range between 0.50 and 0.60 J/cm2. Moreover, laser treated crystal shows an almost stress-free lattice with respect to thermally annealed samples that are characterized by high point and extended defects concentration. Laser annealing process, instead, allows to strongly reduce carbon vacancy (VC) concentration in the implanted area and to avoid intra-bandgap carrier recombination centres. Implanted area was almost preserved, except for some surface oxidation processes due to oxygen leakage inside the testing chamber. However, the results of this experimental activity gives way to laser annealing process viability for damage recovery and dopant activation inside the implanted area.

We report on the reproducible growth of two inch 3C-SiC crystals using the transfer of chemical vapor deposition (CVD)-grown (100) oriented epitaxial layers. Additional experiments, in which the diameter of the free-standing layers is increased, are presented, indicating the upscale potential of this process. The nucleation and growth of cubic silicon carbide is supported by XRD and Raman measurements. The rocking curve data yield a full-width-at-half-maximum (FWHM) between 138 to 140 arc sec for such grown material. Analysis of the inbuilt stress of the bulk-like material shows no indications of any residual stress.

300 μm thick 3C-SiC epilayer was grown on off-axis 4H-SiC(0001) substrate with a high growth rate of 1 mm/hour. Dry oxidation, wet oxidation and N2O anneal were applied to fabricate lateral MOS capacitors on these 3C-SiC layers. MOS interface obtained by N2O anneal has the lowest interface trap density of 3~4x1011 eV-1cm-2. Although all MOS capacitors still have positive net charges at the MOS interface, the wet oxidised sample has the lowest effective charge density of ~9.17x1011 cm-2.

Silicon has been widely used as a material for microelectronic for more than 60 years, attracting considerable scientific interest as a promising tool for the manufacture of implantable medical devices in the context of neurodegenerative diseases. However, the use of such material involves responsibilities due to its toxicity, and researchers are pushing towards the generation of new classes of composite semiconductors, including the Silicon Carbide (3C-SiC). In the present work, we tested the biocompatibility of Silicon and 3C-SiC using an in vitro model of human neuronal stem cells derived from dental pulp (DP-NSCs) and mouse Olfactory Ensheathing Cells (OECs), a particular glial cell type showing stem cell characteristics. Specifically, we investigated the effects of 3C-SiC on neural cell morphology, viability and mitochondrial membrane potential. Data showed that both DP-NSCs and OECs, cultured on 3C-SiC, did not undergo consistent oxidative stress events and did not exhibit morphological modifications or adverse reactions in mitochondrial membrane potential. Our findings highlight the possibility to use Neural Stem Cells plated on 3C-SiC substrate as clinical tool for lesioned neural areas, paving the way for future perspectives in novel cell therapies for neuro-degenerated patients.

The purpose of this work is to study the 4H-SiC epitaxial layer properties for the fabrication of a device for neutron detection as an alternative material to diamond detectors used in this field. We have studied a high growth rate process to grow a thick epitaxial layer (250 µm) of 4H-SiC and, in order to estimate the quality of the epitaxial layer, an optical characterization was done through Photoluminescence (PL) spectroscopy for stacking fault defect evaluation. Micro Raman spectroscopy was used for simultaneous determination of both carrier lifetime and induced carriers in equilibrium. We have compared these results with other two samples with an epitaxial layer of 100 micron, obtained with two different growth rates, 60 and 90 µm/h, respectively. From Raman measurements it has been observed that both the growth rate and the grown epitaxial layer thickness have an effect on the measured carrier lifetime. A comparison between different kinds of stacking faults (SF) was done, evaluating the influence of these defects on the carrier lifetime as a function of the injection level and it was observed that only at a low injection is the effect on the carrier lifetime low.

We report a comprehensive investigation on stacking faults (SFs) in the 3C-SiC cross-section epilayer. 3C-SiC growth was performed in a horizontal hot-wall chemical vapour deposition (CVD) reactor. After the growth (85 microns thick), the silicon substrate was completely melted inside the CVD chamber, obtaining free-standing 4 inch wafers. A structural characterization and distribution of SFs was performed by &mu, Raman spectroscopy and room-temperature &mu, photoluminescence. Two kinds of SFs, 4H-like and 6H-like, were identified near the removed silicon interface. Each kind of SFs shows a characteristic photoluminescence emission of the 4H-SiC and 6H-SiC located at 393 and 425 nm, respectively. 4H-like and 6H-like SFs show different distribution along film thickness. The reported results were discussed in relation with the experimental data and theoretical models present in the literature.

The exceptionally large thermal strain in few-micrometers-thick 3C-SiC films on Si(111), causing severe wafer bending and cracking, is demonstrated to be elastically quenched by substrate patterning in finite arrays of Si micro-pillars, sufficiently large in aspect ratio to allow for lateral pillar tilting, both by simulations and by preliminary experiments. In suspended SiC patches, the mechanical problem is addressed by finite element method: both the strain relaxation and the wafer curvature are calculated at different pillar height, array size, and film thickness. Patches as large as required by power electronic devices (500–1000 μm in size) show a remarkable residual strain in the central area, unless the pillar aspect ratio is made sufficiently large to allow peripheral pillars to accommodate the full film retraction. A sublinear relationship between the pillar aspect ratio and the patch size, guaranteeing a minimal curvature radius, as required for wafer processing and micro-crack prevention, is shown to be valid for any heteroepitaxial system., Journal of Applied Physics, 123 (18), ISSN:0021-8979, ISSN:1089-7550

The cubic polytype of SiC (3C-SiC) is the only one that can be grown on silicon substrate with the thickness required for targeted applications. Possibility to grow such layers has remained for a long period a real advantage in terms of scalability. Even the relatively narrow band-gap of 3C-SiC (2.3eV), which is often regarded as detrimental in comparison with other polytypes, can in fact be an advantage. However, the crystalline quality of 3C-SiC on silicon has to be improved in order to benefit from the intrinsic 3C-SiC properties. In this project new approaches for the reduction of defects will be used and new compliance substrates that can help to reduce the stress and the defect density at the same time will be explored. Numerical simulations will be applied to optimize growth conditions and reduce stress in the material. The structure of the final devices will be simulated using the appropriated numerical tools where new numerical model will be introduced to take into account the properties of the new material. Thanks to these simulations tools and the new material with low defect density, several devices that can work at high power and with low power consumption will be realized within the project.

We present a study for large defects called protrusions that form during the hetero-epitaxy of SiC on Si. We focus first on surface morphology, size, three-dimensional shape and internal structure, and second on photoluminescence and Raman features. These defects have a peculiar 3D structure similar to inverted square pyramids with a vertex close to the SiC/Si interface. The size of the square and the height of the pyramid are both related to the thickness of the epi-layer and are spatially limited by the stacking faults in the {1 1 1} planes. The inner core of the defect consists of nano crystals twinned with respect to the substrate orientation. The defects demonstrate broad peculiar emission band at about 750 nm, while the usual photoluminescence signal from band recombination is at 520 nm. The SiC/Si interface is studied in order to investigate the seed of protrusion defect formation. We found that seeds responsible for the formation of protrusions lie 10 nm above the SiC/Si interface. This indicates that protrusion forms after the carbonization process, in particular in the temperature ramp up after carbonization. Modifying the Si/C ratio and some other growth parameters in the post-carbonization process we succeed in reducing the density of protrusion to less than 10 cm−2.

Silicon carbide (SiC) is a compound semiconductor, which is considered as a possible alternative to silicon for particles and photons detection. Its characteristics make it very promising for the next generation of nuclear and particle physics experiments at high beam luminosity. Silicon Carbide detectors for Intense Luminosity Investigations and Applications (SiCILIA) is a project starting as a collaboration between the Italian National Institute of Nuclear Physics (INFN) and IMM-CNR, aiming at the realization of innovative detection systems based on SiC. In this paper, we discuss the main features of silicon carbide as a material and its potential application in the field of particles and photons detectors, the project structure and the strategies used for the prototype realization, and the first results concerning prototype production and their performance.

Thermal annealing plays a crucial role for healing the defectiveness in the ion implanted regions of DIMOSFETs (Double Implanted MOSFETs) devices. In this work, we have studied the effect of a double step annealing on the body (Al implanted) and the source (P implanted) regions of such devices. We found that a high temperature annealing (1750°C, 1h) followed by a lower temperature one (1500°C, 4h) is mandatory to achieve low defects concentration and good crystal quality in both the n-and p-type zones of the device.

The aim of the NUMEN project is to access the Nuclear Matrix Elements (NME), involved in the half life of the neutrinoless double beta decay (0νββ), by measuring the cross sections of Heavy Ions (HI) induced Double Charge Exchange (DCE) reactions with high accuracy. First evidence of the possibility to get quantitative information about NME from experiments is shown in the reaction 40Ca(18O,18Ne)40Ar at 270 MeV, performed with MAGNEX spectrometer using Superconducting Cyclotron (CS) beams at INFN - Laboratory Nazionali del Sud (LNS) in Catania. Preliminary tests on 116Sn and 116Cd target are already performed. High beam intensity is the new frontiers for these studies.

Electrically trimmable resistors have been manufactured using the phase change alloy Ge 2 Sb 2 Te 5 . High resistivity values (about 1 mΩ cm) and almost zero temperature coefficient of resistance (TCR) have been obtained using resistors with hcp phase of metallic behavior and converting a small region of the film into the fcc phase, with opposite trend of resistance versus temperature. The conversion into the fcc phase has been obtained through two electric pulses, the first for melting and quenching in the amorphous phase and the second for crystallization in the fcc semiconductive phase. Theoretical considerations together with the experimental measurements allow to determine the proper ratio between the metallic and the semiconductive phase required to obtain a target resistance and temperature dependence. For example, a resistor almost independent on the temperature can be achieved by electrical trimming, increasing the resistance of about 10% of the initial value. The resistor layout has been optimized through electro-thermal simulations, to achieve the modification of the resistors structure only in a confined region. Experimental results confirm the theoretical expectations and demonstrate that phase change materials can be effectively used to obtain reversible electrically trimmable resistors with adjustable TCR.

This work reports on the properties of cubic silicon carbide (3C-SiC) grown epitaxially on a patterned silicon substrate composed of squared inverted silicon pyramids (ISP). This compliant substrate prevents stacking faults, usually found at the SiC/Si interface, from reaching the surface. We investigated the effect of the size of the inverted pyramid on the epilayer quality. We noted that anti-phase boundaries (APBs) develop between adjacent faces of the pyramid and that the SiC/Si interfaces have the same polarity on both pyramid faces. The structure of the heterointerface was investigated. Moreover, due to the emergence of APB at the vertex of the pyramid, voids buried on the epilayer form. We demonstrated that careful control of the growth parameters allows modification of the height of the void and the density of APBs, improving SiC epitaxy quality.

One of the main issues with micron-sized intracortical neural interfaces (INIs) is their long-term reliability, with one major factor stemming from the material failure caused by the heterogeneous integration of multiple materials used to realize the implant. Single crystalline cubic silicon carbide (3C-SiC) is a semiconductor material that has been long recognized for its mechanical robustness and chemical inertness. It has the benefit of demonstrated biocompatibility, which makes it a promising candidate for chronically-stable, implantable INIs. Here, we report on the fabrication and initial electrochemical characterization of a nearly monolithic, Michigan-style 3C-SiC microelectrode array (MEA) probe. The probe consists of a single 5 mm-long shank with 16 electrode sites. An ~8 µm-thick p-type 3C-SiC epilayer was grown on a silicon-on-insulator (SOI) wafer, which was followed by a ~2 µm-thick epilayer of heavily n-type (n+) 3C-SiC in order to form conductive traces and the electrode sites. Diodes formed between the p and n+ layers provided substrate isolation between the channels. A thin layer of amorphous silicon carbide (a-SiC) was deposited via plasma-enhanced chemical vapor deposition (PECVD) to insulate the surface of the probe from the external environment. Forming the probes on a SOI wafer supported the ease of probe removal from the handle wafer by simple immersion in HF, thus aiding in the manufacturability of the probes. Free-standing probes and planar single-ended test microelectrodes were fabricated from the same 3C-SiC epiwafers. Cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) were performed on test microelectrodes with an area of 491 µm2 in phosphate buffered saline (PBS) solution. The measurements showed an impedance magnitude of 165 kΩ ± 14.7 kΩ (mean ± standard deviation) at 1 kHz, anodic charge storage capacity (CSC) of 15.4 ± 1.46 mC/cm2, and a cathodic CSC of 15.2 ± 1.03 mC/cm2. Current-voltage tests were conducted to characterize the p-n diode, n-p-n junction isolation, and leakage currents. The turn-on voltage was determined to be on the order of ~1.4 V and the leakage current was less than 8 μArms. This all-SiC neural probe realizes nearly monolithic integration of device components to provide a likely neurocompatible INI that should mitigate long-term reliability issues associated with chronic implantation.

In this paper we study the influence two different post-growth processes on hetero-epitaxial 3C-SiC on Si substrate for 6 and 8 inches wafers. We studied the influence of wafer cutting process and the substrate partially etching. We find an increase of wafer curvature after each cut processes and every etching processes and a correspondent variation of the Raman shift. These result, confirmed by FEM, can be explained in term of the wafer symmetry breaking and the related relaxation under modified constrains due to the cutting and etching. The FEM analysis of the deformation state reveals a modification of the residual stress tensor which changes from a pure biaxial form to a more complicated one.