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SiGe quantum-well pMOSFETs have recently been introduced for enhanced performance of transistors. Quite surprisingly, a significant reduction in negative bias temperature instability (NBTI) was also found in these devices. Furthermore, a stronger oxide field acceleration of the degradation in SiGe devices compared with Si devices was reported. These observations were speculated to be a consequence of the energetical realignment of the SiGe channel with respect to the dielectric stack. As these observations were made on large-area devices, only the average contribution of many defects to NBTI could be studied. In order to reveal the microscopic reasons responsible for the improved reliability, a detailed study of single defects is performed in nanoscale devices. To provide a detailed picture of single charge trapping, the step-height distributions for different device variants are measured and found to follow a unimodal and bimodal distribution. This finding suggests two conducting channels, one in the SiGe and one in the thin Si cap layer. We, furthermore, demonstrate that similar trap depth distributions are present among the device variants supported by a similar stress bias dependence of the capture times of the identified single defects. We conclude that NBTI is primarily determined by the dielectric stack and not by the device technology. [ABSTRACT FROM AUTHOR]

In advancing the study of magnetization dynamics in STT-MRAM devices, we employ the spin drift-diffusion model to address the back-hopping effect. This issue manifests as unwanted switching either in the composite free layer or in the reference layer in synthetic antiferromagnets-a challenge that becomes more pronounced with device miniaturization. Although this miniaturization aims to enhance memory density, it inadvertently compromises data integrity. Parallel to this examination, our investigation of the interface exchange coupling within multilayer structures unveils critical insights into the efficacy and dependability of spintronic devices. We particularly scrutinize how exchange coupling, mediated by non-magnetic layers, influences the magnetic interplay between adjacent ferromagnetic layers, thereby affecting their magnetic stability and domain wall movements. This investigation is crucial for understanding the switching behavior in multi-layered structures. Our integrated methodology, which uses both charge and spin currents, demonstrates a comprehensive understanding of MRAM dynamics. It emphasizes the strategic optimization of exchange coupling to improve the performance of multi-layered spintronic devices. Such enhancements are anticipated to encourage improvements in data retention and the write/read speeds of memory devices. This research, thus, marks a significant leap forward in the refinement of high-capacity, high-performance memory technologies.

We employ a fully three-dimensional model coupling magnetization, charge, spin, and temperature dynamics to study temperature effects in spin-orbit torque (SOT) magnetoresistive random access memory (MRAM). SOTs are included by considering spin currents generated through the spin Hall effect. We scale the magnetization parameters with the temperature. Numerical experiments show several time scales for temperature dynamics. The relatively slow temperature increase, after a rapid initial temperature rise, introduces an incubation time to the switching. Such a behavior cannot be reproduced with a constant temperature model. Furthermore, the critical SOT switching voltage is significantly reduced by the increased temperature. We demonstrate this phenomenon for switching of field-free SOT-MRAM. In addition, with an external-field-assisted switching, the critical SOT voltage shows a parabolic decrease with respect to the voltage applied across the magnetic tunnel junction (MTJ) of the SOT-MRAM cell, in agreement with recent experimental data.

Because of their nonvolatile nature and simple structure, the interest in MRAM devices has been steadily growing in recent years. Reliable simulation tools, capable of handling complex geometries composed of multiple materials, provide valuable help in improving the design of MRAM cells. In this work, we describe a solver based on the finite element implementation of the Landau-Lifshitz-Gilbert equation coupled to the spin and charge drift-diffusion formalism. The torque acting in all layers from different contributions is computed from a unified expression. In consequence of the versatility of the finite element implementation, the solver is applied to switching simulations of recently proposed structures based on spin-transfer torque, with a double reference layer or an elongated and composite free layer, and of a structure combining spin-transfer and spin-orbit torques.

Designing advanced single-digit shape-anisotropy MRAM cells requires an accurate evaluation of spin currents and torques in magnetic tunnel junctions (MTJs) with elongated free and reference layers. For this purpose, we extended the analysis approach successfully used in nanoscale metallic spin valves to MTJs by introducing proper boundary conditions for the spin currents at the tunnel barrier interfaces, and by employing a conductivity locally dependent on the angle between the magnetization vectors for the charge current. The experimentally measured voltage and angle dependencies of the torques acting on the free layer are thereby accurately reproduced. The switching behavior of ultra-scaled MRAM cells is in agreement with recent experiments on shape-anisotropy MTJs. Using our extended approach is absolutely essential to accurately capture the interplay of the Slonczewski and Zhang-Li torque contributions acting on a textured magnetization in composite free layers with the inclusion of several MgO barriers., (© 2022. The Author(s).)

Spin-orbit torque memory is a suitable candidate for next generation nonvolatile magnetoresistive random access memory. It combines high-speed operation with excellent endurance, being particularly promising for application in caches. In this work, a two-current pulse magnetic field-free spin-orbit torque switching scheme is combined with reinforcement learning in order to determine current pulse parameters leading to the fastest magnetization switching for the scheme. Based on micromagnetic simulations, it is shown that the switching probability strongly depends on the configuration of the current pulses for cell operation with sub-nanosecond timing. We demonstrate that the implemented reinforcement learning setup is able to determine an optimal pulse configuration to achieve a switching time in the order of 150 ps, which is 50% shorter than the time obtained with non-optimized pulse parameters. Reinforcement learning is a promising tool to automate and further optimize the switching characteristics of the two-pulse scheme. An analysis of the impact of material parameter variations has shown that deterministic switching can be ensured for all cells within the variation space, provided that the current densities of the applied pulses are properly adjusted.

Silymarin (SM), a standardized extract derived from Silybum marianum (L.) Gaertn, is primarily composed of flavonolignans, with silibinin (SB) as its major active constituent. The present study aimed to evaluate the antigenotoxic activities of SM and SB using the alkaline comet assay in whole blood cells and to assess their effects on the expression of genes associated with carcinogenesis and chemopreventive processes. Different concentrations of SM or SB (1.0, 2.5, 5.0, and 7.5 mg/ml) were used in combination with the DNA damage-inducing agent methyl methanesulfonate (MMS, 800 μ M) to evaluate their genoprotective potential. To investigate the role of SM and SB in modulating gene expression, we performed quantitative real-time PCR (qRT-PCR) analysis of five genes that are known to be involved in DNA damage, carcinogenesis, and/or chemopreventive mechanisms. Treatment with SM or SB was found to significantly reduce the genotoxicity of MMS, upregulate the expression of PTEN and BCL2 , and downregulate the expression of BAX and ABL1 . We observed no significant changes in ETV6 expression levels following treatment with SM or SB. In conclusion, both SM and SB exerted antigenotoxic activities and modulated the expression of genes related to cell protection against DNA damage.