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We investigated the rapid thermal annealing (RTA) sequence effect on the electrical, optical, morphological, and structural properties of transparent thin film transistors (TTFTs) with an indium gallium zinc oxide (IGZO) channel and an indium tin oxide (ITO) source/drain. The electrical and optical properties of the IGZO channel and the ITO source/drain electrodes were compared as a function of RTA temperature in ambient air. The performance of a TTFT with only an RTA-processed IGZO channel was compared with that of a TTFT with an RTA-processed IGZO channel and ITO source/drain electrodes. Using the circular transmission line measurement (CTLM) method, we suggest a possible mechanism that explains the effect of the RTA process on the performance of the TTFT with only an annealed IGZO channel vs. that with an annealed IGZO/ITO multilayer. The TTFT with an RTA-processed IGZO/ITO multilayer showed a threshold voltage shift, an improved on/off ratio of 3.54 × 1011, a subthreshold swing of 0.33 V/decade, and a high mobility of 8.69 cm2/V·s. This indicates that simultaneous RTA processing for an IGZO channel and an ITO electrode is beneficial for the fabrication of high-performance TTFTs.

In this study, the electrical and the optical properties of the amorphous indium-zinc-tin oxide (IZTO) thin films that had been grown using a cosputtering system were investigated as a function of the oxygen flow rate during growth. The optical constants of the IZTO thin films were obtained by applying the Drude and the parametric optical constant models to the ellipsometric angles, Ψ and Δ. We estimated the optical gap energies of the IZTO thin films from their absorption coefficients (α). The Drude tail amplitudes in the optical spectra were found to decrease under the deposition condition of increasing oxygen flow. The resistivity of the IZTO films was measured to be as low as 0.547 mΩ·cm at an oxygen flow rate of 0.3 sccm. Further, the Hall carrier concentrations and the mobilities were measured. We determined the effective masses of the IZTO thin films by using a combination of their optical and electrical parameters. The effective mass of the amorphous IZTO thin films decreased from 0.61 to 0.44 m0 as the oxygen gas flow rate was increased. Assuming a linear dependence of the effective mass on the carrier concentration, we estimated the effective mass at the conduction band minimum. The optically and electrically measured resistivities and mobilities of the amorphous IZTO thin films were equal because the films were free of grain boundaries; therefore, no scattering of free carriers from such grain boundaries had to be considered.

We compared nickel oxide (NiOx) deposited by thermal evaporation and that deposited by the spin-coating process, for use in the hole transport layers of inverted planar perovskite solar cells (PSCs). Spin-coating deposition for NiOx HTL has been widely used, owing to its simplicity, low cost, and high efficiency. However, the spin-coating process has a technical limit to depositing a large-area uniformly. In contrast, thermal evaporation fabrication has a low price and is able to produce uniform and reproducible thin film. Hence, the chemical states, energy band alignment, surface morphologies, and microstructures of NiOx deposited by spin coating and thermal evaporation were analyzed. The PSC with NiOx HTL deposited by thermal evaporation showed a higher power conversion efficiency of 16.64% with open circuit voltage 1.07 V, short circuit current density of 20.68 mA cm−2, and a fill factor of 75.51% compared to that of PSC with spin-coated NiOx. We confirmed that thermal evaporation can deposit NiOx to give a better performance as a HTL with higher reproducibility than spin-coating.

We investigated the characteristics of thermally evaporated fullerene (C60)/Ag/C60 (CAC) multilayer films for use in semi-transparent perovskite solar cells (PSCs) and thin-film heaters (TFHs). The top and bottom C60 layers and Ag interlayer were prepared using multi-source thermal evaporation, and the thickness of the Ag interlayer was investigated in detail for its effects on the resistivity, optical transmittance, and mechanical properties of the CAC electrodes. We used a figure-of-merit analysis to obtain a CAC electrode with a smooth surface morphology that exhibited a sheet resistance of 5.63 Ohm/square and an optical transmittance of 66.13% at a 550 nm wavelength. We conducted mechanical deformation tests to confirm that the thermally evaporated multilayer CAC electrode has a high durability, even after 10,000 times of inner and outer bending, rolling, and twisting due to the flexibility of the amorphous C60 and Ag interlayer. We evaluated the feasibility of using CAC electrodes for semi-transparent PSCs and TFHs. The semi-transparent PSC with 1.08 cm2 active area prepared with a transparent multilayer CAC cathode showed a power conversion efficiency (PCE) of 5.1%. Furthermore, flexible TFHs (2.5 × 2.5 cm2) fabricated on a thermally evaporated CAC electrode show a high saturation temperature of 116.6 C, even at a low input voltage of 4.5 V, due to a very low sheet resistance. Based on the performance of the PSCs and TFHs, we conclude that the thermally evaporated multilayer CAC electrode is promising for use as a transparent conductive electrode (TCE) for semi-transparent PSCs and TFHs, with characteristics comparable to sputtered TCEs., GRAPHICAL ABSTRACT

We demonstrated highly transparent and flexible polytetrafluoroethylene (PTFE) passivation for the MoS

In this study, we demonstrated poly(3,4-ethylenedioxythiophene): poly(styrene sulfonate) (PEDOT:PSS) as a composite with Ag nanowire (Ag NW) to enhance the stretchability of the Ag NW network electrode. The composite Ag NW/PEDOT:PSS hybrid ink (AP ink) was prepared at a ratio of 1 : 10, 1 : 20, and 1 : 30, respectively and bar coated on polyurethane substrate. The different ink ratios were studied and optimized with a sheet resistance of 14.93 Ω sq

We report on a simple and efficient process to enhance the performance of perovskite solar cells by using ITO electrodes with a nanoporous surface formed by wet-etching of self-agglomerated Ag nanoparticles. Effective removal of the Ag nanoparticles embedded in the surface of the ITO electrodes result in a nanoporous structure without changing the ITO's sheet resistance (10.17 Ω/square) and optical transmittance (89.08%) at a 550 nm wavelength. Examinations with a scanning electron microscope, a transmission electron microscope, and two-dimensional porous mapping show that the nanoporous ITO surface has an increased contact area with the electron transport layer, which enhanced the carrier extraction efficiency of the perovskite solar cells. Compare to perovskite solar cells fabricated on typical ITO with a flat surface morphology, the perovskite solar cells fabricated on the nanoporous-surface ITO show a higher fill factor of 81.1% and a power conversion efficiency of 20.1%. These results indicate that modified ITO surfaces with nano-scale porosity provide a simple and efficient method to improve the power conversion efficiency of perovskite solar cells without a complicated process.

As a cost-effective, indium-free, flexible, and highly transparent electrode for flexible thin-film heaters and heat-shielding films, ZnSnO(ZTO)/AgPdCu(APC)/ZTO multi-stacked films were fabricated by using 1500-mm–width, roll-to-roll (RTR) sputtering at room temperature. The optimized RTR-sputtered ZTO/APC/ZTO film showed a very low sheet resistance (3.43 ohm/square), high optical transmittance (80.99%), and small inner/outer critical bending radii (1 and 2 mm, respectively), even when it was processed at room temperature. In particular, the better flexibility of the ZTO/APC/ZTO films, relative to typical ITO films, was confirmed by lab-scale bending, rolling, twisting, and folding tests. Due to the very low sheet resistance, superior flexibility, and low transmittance in the near-infrared wavelength region, flexible and transparent thin-film heaters (TFHs) and flexible heat-shielding films (HSFs) made with the ZTO/APC/ZTO films showed better performance than typical ITO-based TFHs and HSFs. This suggests that the RTR–sputtered, indium-free ZTO/APC/ZTO films can be applied as transparent and flexible electrode materials in cost-effective and multi-functional smart windows for buildings and automobiles.

We compared nickel oxide (NiO

Ultra-wide bandgap β-Ga2O3 photodiodes have received great attention due to transparent solar-blind deep ultraviolet photodetectors. We demonstrated an all oxide-based single-crystal β-Ga2O3 photodiode incorporated with transparent conductive InZnSnO and InSnO as Schottky and Ohmic contacts, respectively. High work function and low resistivity of InZnSnO allow for clear rectifying characteristics with a low dark current (

We investigated the electrical, optical and mechanical properties of silver (Ag) nanowire (NW) embedded into a silk fibroin (SF) substrate to create high performance, flexible, transparent, biocompatible, and biodegradable heaters for use in wearable electronics. The Ag NW-embedded SF showed a low sheet resistance of 15 Ω sq−1, high optical transmittance of 85.1%, and a small inner/outer critical bending radius of 1 mm. In addition, the Ag NW-embedded SF showed a constant resistance change during repeated bending, folding, and rolling because the connectivity of the Ag NW embedded into the SF substrate was well maintained. Furthermore, the biocompatible and biodegradable Ag NW-embedded SF substrate served as a flexible interconnector for wearable electronics. The high performance of the transparent and flexible heater demonstrated that an Ag NW-embedded SF-based heater can act as a biocompatible and biodegradable substrate for wearable heaters for the human body.

Formamidinium lead iodide (FAPbI3) is ideal for highly efficient and operationally stable perovskite solar cells (PSC). However, a primary challenge for FAPbI3 PSC is to suppress the phase transition from the photoactive black phase into the yellow nonperovskite δ-phase. The preparation of Cs-containing mixed FAPbI3 perovskite by cation stoichiometric engineering is demonstrated and the influence of the Cs/FA ratio on its phase stability and device performance is discussed. By exploring the optimal ratio of Cs and FA cations in Cs x FA1−x Pb(I0.94Br0.06)3 perovskite, an inverted planar device with Cs0.17FA0.83Pb(I0.94Br0.06)3 composition shows the best power conversion efficiency (PCE) of 16.5% in an active area of 1.08 cm2. More importantly, the Cs0.17FA0.83Pb(I0.94Br0.06)3 perovskite photoactive layer showed remarkable long-term stability, maintaining 88.1% of its initial efficiency for 1128 h in the presence of moisture and oxygen and without any encapsulation. The excellent long-term stability is found to originate from the appropriate tolerance factor and low thermodynamic decomposition energy, which underpins the strong potential for the commercialization of Cs-containing mixed FAPbI3 PSCs.

We developed radio frequency (RF) magnetron sputtered amorphous vanadium pentoxide (V2O5) film to use in place of typical PEDOT:PSS or solution-processed metal oxide hole injection layer (HIL) in quantum dot light-emitting diodes (QLEDs). The electrical, optical, and chemical properties of the sputtered V2O5 HIL were correlated with the oxygen flow rate at room temperature. At optimized sputtering conditions, the V2O5 film showed a high optical transparency of 91.93% in the visible wavelength region and a work function of 4.73 eV, which is suitable for HIL in QLEDs. We also investigated the performance of QLEDs with sputtered V2O5 HIL as a function of oxygen flow rate. The QLEDs with optimized V2O5 HIL exhibited a maximum luminance of 198,542 cd/m2, a turn-on voltage of 1.7 V, a max external quantum efficiency of about 8.3%, and a current efficiency of 20.3 cd/A, thereby making it comparable to typical PEDOT:PSS HIL-based QLEDs. The successful operation of QLEDs with sputtered V2O5 as HIL demonstrated that it could be used instead of other materials for next-generation large-area QLED displays.

Ga-doped ZnO (GZO)-graded layer, facilitating electron extraction from electron transport layer, was integrated on the surface of transparent indium tin oxide (ITO) cathode by using graded sputtering technique to improve the performance of planar n-i-p perovskite solar cells (PSCs). The thickness of graded GZO layer was controlled to optimize GZO–indium tin oxide (ITO) combined electrode for planar n-i-p PSCs. At optimized graded thickness of 15 nm, the GZO–ITO combined electrode showed an optical transmittance of 95%, a resistivity of 2.3 × 10−4 Ohm cm, a sheet resistance of 15.6 Ohm/square, and work function of 4.23 eV, which is well matched with the 4.0-eV lowest unoccupied molecular orbital of [6,6]-phenyl-C61-butyric acid methyl ester. Owing to enhanced extraction of electron by the graded GZO, the n-i-p PSC with GZO–ITO combined electrode showed higher power conversion efficiency (PCE) of 9.67% than the PCE (5.25%) of PSC with only ITO electrode without GZO-graded layer. In addition, the GZO integrated-ITO electrode acts as transparent electrode and electron extraction layer simultaneously due to graded mixing of the GZO at the surface region of ITO electrode., Graphical abstract

(ta-C) films coated through the filtered cathodic vacuum arc (FCVA) process as a hole transport layer (HTL) for perovskite solar cells (PSCs) and quantum dot light-emitting diodes (QDLEDs). The p-type ta-C film has several remarkable features, including ease of fabrication without the need for thermal annealing, reasonable electrical conductivity, optical transmittance, and a high work function. X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy examinations show that the electrical properties (sp3/sp2 hybridized bond) and work function of the ta-C HTL are appropriate for PSCs and QDLEDs. In addition, in order to correlate the performance of the devices, the optical, surface morphological, and structural properties of the FCVA-grown ta-C films with different thicknesses (5 ~ 20 nm) deposited on the ITO anode are investigated in detail. The optimized ta-C film with a thickness of 5 nm deposited on the ITO anode had a sheet resistance of 10.33 Ω−2, a resistivity of 1.34 × 10−4 Ω cm, and an optical transmittance of 88.97%. Compared to the reference PSC with p-NiO HTL, the PSC with 5 nm thick ta-C HTL yielded a higher power conversion efficiency (PCE, 10.53%) due to its improved fill factor. Further, the performance of QDLEDs with 5 nm thick ta-C hole injection layers (HIL) showed better than the performance of QDLEDs with different ta-C thicknesses. It is concluded that ta-C films have the potential to serve as HTL and HIL in next-generation PSCs and QDLEDs., Graphical abstract

Materials with anisotropic properties have different electronic structures and photoelectrochemical (PEC) performance depending on the facet. Herein, we controlled the morphology of WO3 nanoflakes, and the ratio of the revealed WO3 facet using patterned F-doped SnO2 fabrication by means of direct printing. In the case of WO3 NF synthesized on patterned FTO (FB-WO3/BiVO4), the proportion of the (002) facet decreased and that of the (200) and (020) facets increased in comparison to the case when NF were synthesized on flat FTO (B-WO3/BiVO4). As the facet ratio changed, the band structure and efficiency changed. The photocurrent density of FB-WO3/BiVO4 was 1.50 mA/cm2, which was 34% higher than that of B-WO3/BiVO4 (1.12 mA/cm2) at 1.23 VRHE. Our results indicate that the efficiency of PEC water splitting can be increased by engineering the exposed facet according to the shape of the substrate, rather than varying the synthetic method.

We have studied characteristics of tin-doped indium oxide (ITO) films sputtered on flexible invar metal foil covered with an insulating SiO2 layer at room temperature to use as transparent electrodes coated substrates for curved perovskite solar cells. Sheet resistance, optical transmittance, surface morphology, and microstructure of the ITO films on SiO2/invar substrate are investigated as a function of the thickness from 50 to 200 nm. The optimized ITO film exhibits a low sheet resistance of 50.21 Ohm/square and high optical transmittance of up to 94.31% even though it is prepared at room temperature. In particular, high reflectance of invar metal substrate could enhance the power conversion efficiency of curved perovskite solar cell fabricated on the ITO/SiO2/invar substrate. In addition, critical bending radius of the 150 nm-thick ITO film is determined by lab-designed outer and inner bending tests to show feasibility as flexible electrode. Furthermore, dynamic fatigue test is carried out to show flexibility of the ITO film on invar metal substrate. This suggests that the ITO/SiO2/invar substrate can be applied as flexible electrodes and substrates for curved perovskite solar cells.