1. The synthesis, crystal structure and electrical properties of [FexMn1−x]Ta(O2)O2 with x ≈ 0.3
- Author
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Jinling Huang, Honghui Zhuang, and Shuiquan Deng
- Subjects
chemistry.chemical_classification ,business.industry ,Stereochemistry ,Crystal structure ,Condensed Matter Physics ,Trigonal prismatic molecular geometry ,Electronic, Optical and Magnetic Materials ,Inorganic Chemistry ,Crystallography ,Semiconductor ,chemistry ,Electrical resistivity and conductivity ,X-ray crystallography ,Materials Chemistry ,Ceramics and Composites ,Physical and Theoretical Chemistry ,business ,Chemical composition ,Inorganic compound ,Solid solution - Abstract
The new layered compound [FexMn1−x]Ta(O2)O2 (x ≈ 0.3) has been prepared and structurally characterized. This compound crystallizes in orthohombic system (C22v - Pmc21), a = 4.726(1), b = 5.697(2), c = 4.963(1)A with two formula units in the cell. The structure contains Ta and M atoms in unusual trigonal prismatic environments with the TaO distances ranging from 1.74(2) to 1.995(9) A, and the MO distances from 2.10(2) to 2.24(2) A. Each M site is statistically occupied by about 30% Fe atoms and 70% of Mn atoms (M ≈ 0.3 Fe + 0.7 Mn). Metrical details are discussed. Results of electrical resistivity measurements on the new material indicate the saturated semiconductor behavior along the c-axis.
- Published
- 1992
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