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With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce the operating voltage1. This led to a fundamental change in the gate stack in 2008, the incorporation of high-dielectric-constant HfO2 (ref. 2), which remains the material of choice to date. Here we report HfO2-ZrO2 superlattice heterostructures as a gate stack, stabilized with mixed ferroelectric-antiferroelectric order, directly integrated onto Si transistors, and scaled down to approximately 20 ångströms, the same gate oxide thickness required for high-performance transistors. The overall equivalent oxide thickness in metal-oxide-semiconductor capacitors is equivalent to an effective SiO2 thickness of approximately 6.5 ångströms. Such a low effective oxide thickness and the resulting large capacitance cannot be achieved in conventional HfO2-based high-dielectric-constant gate stacks without scavenging the interfacial SiO2, which has adverse effects on the electron transport and gate leakage current3. Accordingly, our gate stacks, which do not require such scavenging, provide substantially lower leakage current and no mobility degradation. This work demonstrates that ultrathin ferroic HfO2-ZrO2 multilayers, stabilized with competing ferroelectric-antiferroelectric order in the two-nanometre-thickness regime, provide a path towards advanced gate oxide stacks in electronic devices beyond conventional HfO2-based high-dielectric-constant materials.

In this work, the ferroelectric characteristic of a 5 nm Hf0.5Zr0.5O2 (HZO) metal-ferroelectric-insulator-semiconductor (MFIS) device is enhanced through strained complementary metal oxide semiconductor (CMOS)-compatible TiN electrode engineering. Strained TiN top-layer electrodes with different nitrogen (N) concentrations are deposited by adjusting the sputtering process conditions. The TiN electrode with 18% N exhibits a compressive characteristic, which induces tensile stress in a 5 nm HZO film. A device with 18% N in TiN shows a higher remanent polarization (2Pr) and larger capacitance value than the compared sample, indicating that the strained TiN is promising for enhancing the ferroelectricity of sub-5 nm HZO devices.

Ultrathin ferroelectric materials could potentially enable low-power perovskite ferroelectric tetragonality logic and nonvolatile memories1,2. As ferroelectric materials are made thinner, however, the ferroelectricity is usually suppressed. Size effects in ferroelectrics have been thoroughly investigated in perovskite oxides-the archetypal ferroelectric system3. Perovskites, however, have so far proved unsuitable for thickness scaling and integration with modern semiconductor processes4. Here we report ferroelectricity in ultrathin doped hafnium oxide (HfO2), a fluorite-structure oxide grown by atomic layer deposition on silicon. We demonstrate the persistence of inversion symmetry breaking and spontaneous, switchable polarization down to a thickness of one nanometre. Our results indicate not only the absence of a ferroelectric critical thickness but also enhanced polar distortions as film thickness is reduced, unlike in perovskite ferroelectrics. This approach to enhancing ferroelectricity in ultrathin layers could provide a route towards polarization-driven memories and ferroelectric-based advanced transistors. This work shifts the search for the fundamental limits of ferroelectricity to simpler transition-metal oxide systems-that is, from perovskite-derived complex oxides to fluorite-structure binary oxides-in which 'reverse' size effects counterintuitively stabilize polar symmetry in the ultrathin regime.

We demonstrate that a ferroelectric can cause a differential amplification without needing such an external energy source. As the ferroelectric switches from one polarization state to the other, a transfer of energy takes place from the ferroelectric to the dielectric, determined by the ratio of their capacitances, which, in turn, leads to the differential amplification. This amplification is very different in nature from conventional inductor-capacitor based circuits where an oscillatory amplification can be observed. The demonstration of differential voltage amplification from completely passive capacitor elements only has fundamental ramifications for next generation electronics.

We experimentally demonstrate a monolithic 3D integrated complementary metal oxide semiconductor (CMOS) inverter using layered transition metal dichalcogenide semiconductor N-channel (NMOS) and P-channel (PMOS) MOSFETs, which are sequentially integrated on two levels. The two devices share a common gate. Molybdenum disulphide and tungsten diselenide are used as channel materials for NMOS and PMOS, respectively, with an ON-to-OFF current ratio (ION/IOFF) greater than 106 and electron and hole mobilities of 37 and 236 cm2/Vs, respectively. The voltage gain of the monolithic 3D inverter is about 45 V/V at a supply voltage of 1.5 V and a gate length of 1 μm. This is the highest reported gain at the smallest gate length and the lowest supply voltage for any 3D integrated CMOS inverter using any layered semiconductor.

Scaling of silicon (Si) transistors is predicted to fail below 5-nanometer (nm) gate lengths because of severe short channel effects. As an alternative to Si, certain layered semiconductors are attractive for their atomically uniform thickness down to a monolayer, lower dielectric constants, larger band gaps, and heavier carrier effective mass. Here, we demonstrate molybdenum disulfide (MoS2) transistors with a 1-nm physical gate length using a single-walled carbon nanotube as the gate electrode. These ultrashort devices exhibit excellent switching characteristics with near ideal subthreshold swing of ~65 millivolts per decade and an On/Off current ratio of ~106 Simulations show an effective channel length of ~3.9 nm in the Off state and ~1 nm in the On state.

Single-crystalline thin films of complex oxides show a rich variety of functional properties such as ferroelectricity, piezoelectricity, ferro and antiferromagnetism and so on that have the potential for completely new electronic applications. Direct synthesis of such oxides on silicon remains challenging because of the fundamental crystal chemistry and mechanical incompatibility of dissimilar interfaces. Here we report integration of thin (down to one unit cell) single crystalline, complex oxide films onto silicon substrates, by epitaxial transfer at room temperature. In a field-effect transistor using a transferred lead zirconate titanate layer as the gate insulator, we demonstrate direct reversible control of the semiconductor channel charge with polarization state. These results represent the realization of long pursued but yet to be demonstrated single-crystal functional oxides on-demand on silicon.

This study reports a novel microfluidic platform for rapid and long-ranged concentration of rare-pathogen from human blood for subsequent on-chip surface-enhanced Raman spectroscopy (SERS) identification/discrimination of bacteria based on their detected fingerprints. Using a hybrid electrokinetic mechanism, bacteria can be concentrated at the stagnation area on the SERS-active roughened electrode, while blood cells were excluded away from this region at the center of concentric circular electrodes. This electrokinetic approach performs isolation and concentration of bacteria in about three minutes; the density factor is increased approximately a thousand fold in a local area of ~5000 μm(2) from a low bacteria concentration of 5 × 10(3) CFU/ml. Besides, three genera of bacteria, S. aureus, E. coli, and P. aeruginosa that are found in most of the isolated infections in bacteremia were successfully identified in less than one minute on-chip without the use of any antibody/chemical immobilization and reaction processes.

This study reports a novel microfluidic platform for rapid and long-ranged concentration of rare-pathogen from human blood for subsequent on-chip surface-enhanced Raman spectroscopy (SERS) identification/discrimination of bacteria based on their detected fingerprints. Using a hybrid electrokinetic mechanism, bacteria can be concentrated at the stagnation area on the SERS-active roughened electrode, while blood cells were excluded away from this region at the center of concentric circular electrodes. This electrokinetic approach performs isolation and concentration of bacteria in about three minutes; the density factor is increased approximately a thousand fold in a local area of ~5000 μm(2) from a low bacteria concentration of 5 × 10(3) CFU/ml. Besides, three genera of bacteria, S. aureus, E. coli, and P. aeruginosa that are found in most of the isolated infections in bacteremia were successfully identified in less than one minute on-chip without the use of any antibody/chemical immobilization and reaction processes.

In order to satisfy the healthy growth and performance of livestock and poultry, a large amount of energy is often consumed in the production process of modern livestock and poultry breeding, which is used for automatic feeding management and regulation of breeding environment. In this study, based on the ISO 13790 5R1C equivalent resistance capacitance network computing model, using the henhouse heat balance, water balance, balance of gas (ammonia, carbon dioxide concentration) principle, we developed a simple closed loop control henhouse environment and energy consumption prediction model, Through on-site validation tests, the results show that the model is reliable, and it can assist the farmer for breeding planning, house-design process and increase environmental control and energy management efficiency.

The introduction of forage grass in poultry industry had double benefit on animals and the environment. In this study, three kinds of pastures were planted artificially to evaluate their roles through the determination of grass, chicken and soil-related indexes. The results showed that raising chickens under the forest could destroy vegetation and affect the chemical properties of soil negatively. Changes of soil caused by chickens can be alleviated through planting grass. Forage provided a certain food source for chickens without affecting the growth, slaughter properties, meat quality, immune indexes and other performances. Suitable pasture should have good regeneration ability, trampling resistance, good palatability, and do not cause harm to the health of chickens.

The free-range broiler production is an effective combination of ecological and economic benefits. However, excessive stocking will inevitably lead to a variety of negative effects, such as the destruction of vegetation, the hardening and even acidification of soil. It is very important to determine the reasonable stocking density for free-range broiler. In this paper, the outdoor feeding density of free-range broiler in different stocking ecosystems based on the nitrogen cycling was proposed combination of theoretical derivation and investigation and research, and proved the correctness of the research idea and density parameters through empirical research, which provided the key technical parameters for scientific guidance of free range chicken production.

The harmless treatment of dead chickens is an important content in poultry production. This paper compared the effects of the harmless treatment of dead chickens by adding different disinfectants, including quicklime and calcium hypochlorite. The results showed that both quicklime and calcium hypochlorite could increase the total bacteria content, improve the harmless treatment capacity, and shorten the killing time of Escherichia coli and Staphylococcus aureus. The effect of quicklime was better than that of calcium hypochlorite. The experiment provided practical guidance for harmless treatment of scale chicken farm.

LiDAR technology has been widely used in forest survey and research, but the high-resolution point cloud data generated by LiDAR equipment also pose challenges in storage and computing. To address this problem, we propose a point cloud simplification method for trees, which considers both higher similarity to the original point cloud and the area of the tree point cloud. The method first determines the optimal search neighborhood using the standard deviation of FPFH information entropy. Based on FPFH information entropy and Poisson disc sampling theory, the point cloud is partitioned and sampled. By optimizing the separation thresholds of significant feature points and less significant feature points using a genetic algorithm with the Hausdorff distance and point cloud area as the objective function, the final simplified point cloud is obtained. Validation with two point cloud data sets shows that the proposed method achieves good retention of the area information of the original point cloud while ensuring point cloud quality. The research provides new approaches and techniques for processing large-scale forest LiDAR scan point clouds, reducing storage and computing requirements. This can improve the efficiency of forest surveys and monitoring. [ABSTRACT FROM AUTHOR]