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Based on the diamond and inorganic sol, spray-drying method was used to prepare diamond-vitrified bond composite powders and then the bulk samples were obtained after pressing and sintering the powders. The surface morphology and particle size distribution of the composite powders were examined by scanning electron microscope and laser particle size analyzer,the sintering temperature of the composites was selected with the aid of the comprehensive thermal analysis instrument,the bending strength, fracture morphology and crystal phases of sintered samples prepared by spray-drying method and melting method were characterized by motorized bending tester, scanning electron microscope and X-ray diffraction, respectively. The results show that the composite powders prepared by spray-drying are spherical,which is beneficial to mould forming. Their wide size distribution helps to improve the density of diamond-vitrified bond green body. The sintering temperature of the composites is 820℃.The bonding and wrapping of diamond can be realized at this temperature. With the increase of bond content, the bending strength of sintered samples prepared by two methods increases and porosity decreases. When the vitrified bond content is 32%(mass fraction), the microstructure of samples prepared by spray-drying is uniform and is easy to be crystallized, and the bending strength and porosity are 99.46MPa and 38.55%;while for samples obtained from melting method, the corresponding figures are 72.42MPa and 39.89%.

Deep-ultraviolet (DUV) phototransistors have shown great potential applications in UV imaging, artificial intelligence, and wearable optoelectronics. Among a large number of wide bandgap semiconductors, the quasi-two-dimensional β-Ga2O3 is considered as an ideal candidate for DUV photodetector applications. Herein, we report a high responsivity (R) and fully flexible Ta-doped β-Ga2O3 DUV phototransistor which exhibits outstanding optoelectrical properties with a high R of 1.32 × 106 A/W, a large detectivity of 5.68 × 1014 Jones, a great photo-to-dark current ratio of 1.10 × 1010%, a high external quantum efficiency of 6.60 × 108%, and an ultra-fast response time of ~3.50 ms. Besides, the flexible Ta-doped β-Ga2O3 device also displays high reliability and mechanical flexibility that can sustain well after over 1 × 104 bending cycles. Moreover, high-contrast imaging of UV light was obtained on the flexible DUV detector arrays, which can be efficiently trained and recognized by an artificial neural network. Our findings offer a perspective to develop wearable optoelectronics and UV imaging based on high-performance flexible β-Ga2O3 DUV phototransistors, providing an inspiration for the future work in artificial intelligence and bionic robot fields. [ABSTRACT FROM AUTHOR]

HgCdTe electron avalanche photodiodes (e-APDs) have been widely used for low-flux and high-speed application. To better understand the dark current transport and electron-avalanche mechanism of the devices and optimize the structures, we performed accurate numerical simulations of the current–voltage characteristics and multiplication factor in planar homojunction (p-i-n) HgCdTe APDs. Based on the Okuto–Crowell avalanche model, an efficient physical model has been obtained by concerning the major generation-recombination processes, such as trap-assisted tunneling and band-to-band tunneling (BBT) recombination. Simulated current–voltage characteristics were in good agreement with available data in the literature, which demonstrates the validity of the proposed model. The origins of dark current in high reverse voltages are jointly dominated by BBT and the avalanche mechanism. It is proved to be effective for reducing BBT by improving the uniformity of the electric field distribution across the junction. The electric performance of p-i-n e-APD can be improved by optimizing the APD structure, such as eliminating the sharp corners of junctions, light doping, and the appropriate thickness in multiplication region. Our works provide a good deal of insight into the fundamental carrier transport processes involved in HgCdTe e-APDs. [ABSTRACT FROM AUTHOR]