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HarmVect is a tool simulating the introduction of arthropods into Belgium. The tool is designed to guide the user to divide the complex arrival of the arthropod into all its potential pathways, which in turn are further subdivided into individual pathway segments. These manageable pathway segments are then used to specify which detailed data the user needs to gather to input into the tool. This information is used to simulate the magnitude of the arthropod population during the successive pathway segments throughout each potential introduction pathway. The tool simulates the fluctuating propagule pressure throughout the successive segments of each pathway to calculate risk indices, which are then used to generate pathway risk maps of the arthropod for Belgium. The tool generates 2 types of pathway risk map: (a) a point of entry pathway (POE) risk map consisting of concentrated hotspots relating to the arthropod's entry at national borders, and (b) a point of appearance (POA) pathway risk map, succeeding the POE and visualizing the locations and level at which undetected propagules of the arthropod are exposed to the outside environment throughout Belgium. In conclusion, the tool produces an establishment risk map for the arthropods, which is generated by combining the POA with a map of climate suitability and host availability.

Aluminum alloys 2099-T6 die forgings, 2099-T83 extrusions, 7075-T7651 plate, 7085-T7452 die forgings, 7085-T7651 plate, and 2397-T87 plate were thermally exposed at temperatures of 180 °C (350 °F), 230 °C (450 °F), and 290 °C (550 °F) for 0.1, 0.5, 2, 10, 100, and 1000 h. The purpose of this study was to determine the effect of thermal exposure on the mechanical properties and electrical conductivity of these alloys. The data shows that higher temperatures and longer exposure times generally resulted in decreased strength and hardness and increased percent elongation and electrical conductivity.

Summary form only given. The authors present a complementary RESURF p-LDMOS in which the n/sup +/ buried layer is used as an effective substrate and a field implant is introduced to modify the drift charges. The implant conditions in this case, particularly the placements, are studied. After processing, V/sub B/ are investigated with different implant placement (L/sub A/, L/sub B/) and field oxide lengths L/sub F/. It is found that although the ion implant covers part of the drift region, the device performance can still be greatly improved. Results show that a long enough implant, compatible with L/sub F/, under the field oxide can result in the maximum, V/sub B/=V/sub BP/. This is verified by simulation results, which show that the peak of the surface electric field is significantly reduced. Results also show that a full length (L/sub F/) implantation under the field oxide can result in the minimum R/sub on/ for a fixed L/sub F/. >

In the framework of the EUROMAGTECH cooperation, several coils for pulsed magnetic fields were developed and tested for their ultimate performance. A winding machine was developed which can reinforce each layer of conductor with a uniaxial wrap of fibers. Thus, optimum reinforcement can be obtained which resulted in coils producing 67 T in a 12-mm bore and 58 T in a 20-mm bore. Alternatively, a cable of pearlitic steel around a copper core was developed at BEKAERT, resulting in a wire with a strength of more than 1 GPa at a room-temperature conductivity of 60% IACS. This wire was wound into a coil with a bore of 17 mm, producing 54-T without noticeable radial deformation of the coil. >

This paper investigates a Generic Cell Rate Algorithm (GCRA) based Usage Parameter Control (UPC) function implementing a discard function for non-conforming cells, thereby establishing a so-called Cell Discard Ratio (CDR) as UPC performance measure. Focusing on Constant Bit Rate (CBR) connections, the UPC transfer characteristics are studied in case of Peak Cell Rate Contract Violations. Also the influence of the Contracted Cell Delay Variation Tolerance value on the CDR performance of the UPC is incorporated in the study.

An improved SPICE DC model for high-voltage DMOS transistors is proposed by considering the drift resistance modulation by both the gate and the drain voltages. A non-linear voltage controlled voltage source (VCVS) is introduced to represent this modulation. Results calculated from this model agree well with the experimental curves of the device DC characteristics

For MOSFETs operating at moderate and higher power levels a negative dynamic resistance is observed. An electro-thermal model based on the temperature dependence of the mobility and the velocity saturation is proposed.

Breakdown walkout in high-voltage pLDMOS transistors on a thin epitaxial layer is observed and investigated by using ion implantation to vary the surface electric field in the drift region. Results show that the walkout is closely related to the surface field and can be reduced by determining the correct extent of ion implantation.

A simple theory of rolling resistance is compared to experimental results on rolling billiard balls. The resistive force is shown to be independent of velocity for velocities smaller than 0.5 m/s. The sliding friction coefficient is determined by measuring the force needed to immobilize a skidding ball. The coefficient increases with increasing sliding velocity and approaches asymptotically the value of 0.21 which is quoted in the literature.

A wide sampling of eighty-two modern marine and freshwater muds was analyzed for B, Cr, Ga, Ni, V, clay in amounts less than $$2 \mu (