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5. New recipe for a wee DRAM(dynamic random access memory)

Author

Streiffer, Stephen K. and Kingon, A.I.

Subjects
Dynamic random access memory -- Design and construction, Capacitors -- Design and construction, Dielectrics -- Usage, Environmental issues, Science and technology, Zoology and wildlife conservation
Abstract

There are three strategies essential to increase the capacitance per unit of the projected area occupied by an integrated capacitor, which represents digital bits in dynamic random access memories (DRAMS). The strategies include: a reduction in the thickness of the dielectric layer, increasing the capacitor area per foot print area of the cell, and the use of innovative materials for the capacitor dielectric. Foot print area of the cell can be increased by the introduction of three-dimensional structures such as trenches, stacks or by introducing microstructural roughness.

Published
1995

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