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The development of photovoltaics (PV)-powered vehicles are expected to contribute to reduce CO2 emission of vehicles and create a clean energy society. This paper presents the impact of high-efficiency solar cell modules on reduction in CO2 emission, charging cost reduction for electric vehicles, and reducing storage capacity of PV-powered electric vehicles. In this paper, the effects of solar cell module efficiency upon driving distance of PV-powered vehicles are also shown. Especially, the potential of Si tandem solar cells for PV-powered vehicle applications is discussed. This paper presents that the III-V/Si 3-junction solar cell modules with an efficiency of more than 37% have the potential of longer driving distance of 30 km/day average and more than 50 km/day on a clear day compared to an average 16 km/day driving by vehicles powered by 20% efficiency Si solar cell modules.

Mimicking the biological function of the extracellular matrix is an approach to developing cell adhesive biomaterials. The RGD peptide, derived from fibronectin (Fn), mainly binds to integrin αvβ3 and has been widely used as a cell adhesive peptide on various biomaterials. However, cell adhesion to Fn is thought to be mediated by several integrin subtypes and syndecans. In this study, we synthesized an RGD-containing peptide (FIB1) and four integrin α4β1-binding-related motif-containing peptides (LDV, IDAPS, KLDAPT, and PRARI) and constructed peptide-chitosan matrices. The FIB1-chitosan matrix promoted human dermal fibroblast (HDF) attachment, and the C-terminal elongated PRARI (ePRARI-C)-conjugated chitosan matrix significantly promoted HDF attachment through integrin α4β1 and syndecan binding. Next, we constructed a mixed ePRARI-C- and FIB1-chitosan matrix to develop a Fn mimetic biomaterial. The mixed ePRARI-C/FIB1-chitosan matrix promoted significantly better cell attachment and neurite outgrowth compared to those of either ePRARI-C- or FIB1-chitosan matrices. HDF adhesion to the ePRARI-C/FIB1-chitosan matrix was mediated by integrin, α4β1, α5β1, and αvβ3, similar to HDF adhesion to Fn. These data suggest that an ePRARI-C/FIB1-chitosan matrix can be used as a tool to analyze the multiple functions of Fn and can serve as a Fn-mimetic biomaterial.

We investigated the effect of silicon dioxide (SiO_2) film in n-type front-emitter (n-FE) crystalline Si (c-Si) solar cells on the potential-induced degradation (PID) of n-FE photovoltaic (PV) modules. After PID tests by applying a bias of −1000 V at 85 °C for a few min, the modules with the cells without SiO_2 did not degrade in the short-circuit current density (J_) and the open-circuit voltage (V_). Since the degradation is known to be due to positive charge accumulation in SiN_x films, the result suggests that such SiO_2 acts as barriers to retain accumulated positive charges. After further PID tests, modules without SiO_2 show faster and more significant degradation by a decreases in the fill factor (FF) and the V_. It has been proposed that the degradation in the FF and V_ is caused by sodium (Na) introduction into cells. The results therefore suggest that SiO_2 delays Na migration.

In this study, we investigated progression of potential-induced degradation (PID) in photovoltaic modules fabricated from n-type-based crystalline-silicon cells with front p^+ emitters. In PID tests in which a bias of −1000 V was applied to the modules, they started to degrade within 5 s and their degradation saturated within 60 s. This behavior suggested that the PID was caused by positive charge accumulation in the front passivation films. Performing PID tests with a bias of −1500 V revealed that the degradation rate strongly depended on the applied bias whereas the saturation value was independent of the applied bias. Regeneration tests on degraded modules previously subjected to PID tests for durations of 5 and 10 min were performed by applying a positive bias of +1000 V. All the degraded modules completely recovered their performance losses within 60 s regardless of the degradation test duration. On the basis of these results, we proposed that these positive charges originate from positively charged K centers formed by extracting electrons from neutral and negatively charged K centers. This model readily explains the observed degradation and regeneration behavior. To test our model, we determined the fixed positive charge densities(Q_f ) of a silicon nitride passivation film before and after PID, for which it was found that Q_f showed similar saturation behavior. Additionally, the saturated Q_f value was of the same order as K center density. These results support our model involving a charging process of K centers.

Workfunction of reactive-plasma deposited indium-tin-oxide (RPD-ITO) at the ITO/SiO2 interface, which is referred as interface workfunction, and the process-induced damage are experimentally extracted for the first time based on capacitance-voltage (C-V) analysis. The estimated interface workfunction value of 4.74 eV for as-deposition condition is about 0.4 eV higher than that in the bulk determined by ultraviolet photoelectron spectroscopy (UPS). The RPD process induces the damage at the Si/SiO2 interface, and the degree of the damage is evaluated as the interface defect density (Dit) to be around 1012 cm-2eV-1. The effects of forming-gas annealing on the interface workfunction and recovery of the damage are also studied. The interface workfunction value once decreases to 4.53 eV by the annealing up to 250 oC and then turns to increase to 4.77 eV after 400 oC annealing. The damage is annihilated by the low-temperature forming-gas annealing at 200 oC.

The effects of residual C on cell properties are investigated from the view point of thermal budget in the n-type bifacial cell processes. Implied Voc obtained from wafers with same Oi concentration depend on the thermal budgets decreases as the Cs concentration increases. The Voc values vary depending on the wafer with different growth cooling rate. To analyze the effect of thermal budget correspond to solar cell fabrication process, CZ wafers with almost the same Oi concentrations are prepared. One of the wafers with relatively high residual Cs concentration shows the longer lifetime than the initial value after the 950 oC annealing step. On the other hand, the lifetime of a wafer with relatively low Cs concentration dramatically decreased by the same process due to the O segregation. These results suggest that it is important to choose appropriate wafer specification, starting with feedstock material, for increasing the solar cell efficiency.

Various solar cells and materials have great potential as future generation solar cells and materials including crystalline Si. Si tandem solar cells such as III-V/Si tandem, II-VI/Si tandem, Chalcopyrite/Si tandem and Perovskite/Si tandem solar cells are expected to have great potential of space and terrestrial application because of high efficiency, light weight and low cost potential. Quantum and Nano structures such as MQWs ‘(Multi Quantum Wells) and QDs (Quantum Dots) are also expected as high-efficiency solar cells. However, there are some problems to be solved. Because point defects in crystalline Si, high density of dislocations and interface recombination in Si tandem solar cell materials and interface recombination in MQWs and QDs affect on solar cell properties, understanding and controlling those defects are very important for realizing higher efficiency. This paper presents analytical results for high efficiency potential of single crystalline Si solar cells, Si tandem solar cells, and MQW and QD solar cells. Although 25.6% efficiency has been attained with hetero-junction and back contact structure and by using bulk minority-carrier lifetime of around 10 msec, high efficiency of more than 27.5% is expected to be realized by increasing bulk lifetime of more than 100 msec Si. Really, high bulk lifetime of around 100 msec has been obtained by the MCZ (Magnetic-field-applied Czochralski) method and decreasing carbon concentration to less than 1014 cm-3 in Si. Understanding behavior of point defects such as Cs-Oi and so forth in Si and decreasing those defects density are suggested for realizing higher bulk lifetime and higher efficiency Si solar cells of more than 27.5%. High efficiency potential of Si tandem solar cells such as III-V/Si tandem, II-VI/Si tandem, Chalcopyrite/Si tandem and Perovskite/Si tandem solar cells is also analyzed by using measure of external radiative efficiency: 43% for III-V/Si 3-J(Junction) tandem, 38% for III-V/Si 2-J tandem, 33% for II-V/Si 2-J tandem, 32% for Chalcopyrite/Si tandem, and 32% for Perovskite/Si tandem solar cells. Effects of dislocations upon minority-carrier lifetime in III-V/Si tandem solar cells are also presented. Our recent result for mechanically stacked InGaP/GaAs//Si 3-junction tandem solar cell with efficiency of 27.4% is shown. Although MQW and QD solar cells are expected as high efficiency solar cells, one of big problems is higher interface recombination near MQWs and QDs because of their lattice mismatching. Lattice mismatch (Δa/a0) dependence of interface recombination velocity (SI) in MQW and QD solar cells is analyzed. Open-circuit voltage drop by interface recombination in MQWs and QDs and their efficiency potential is discussed.

A novel approach has been proposed to solve conversion efficiency degradation due to recombination loss at a gap region between p/i- and n/i-aSi:H layers in an interdigitated back contact Si heterojunction (IBC-SHJ) cell architecture. In our approach, a charged-insulator layer is newly introduced to cover the i-aSi:H on the gap region. Our simulation demonstrates that this leads to suppression of the recombination at the gap region, resulting in a significant improvement in the efficiency. Fixed-charge (Qf) with density of around 1012 cm-2 almost fully recovers the efficiency even with a low-quality surface at the gap around with the interfacial defect density of 1012 cm-2eV-1. The decrease in the recombination is owing to the field-effect passivation induced by the Qf. The recovery in the efficiency by Qf still works even though the quantum effects is considered, which causes some modification in the carrier distribution at the hetero-interface. Such charged-insulators are feasible by already existing materials such as Si nitride. In addition, this charged insulator architecture allows easy alignment for the backside structure. Thus, this proposal will be easily adopted for a mass production where the relaxed design rule is mandatory.