Search

Flexible electronics opened a new class of future electronics. The foldable, light and durable nature of flexible electronics allows vast flexibility in applications such as display, energy devices and mobile electronics. Even though conventional electronics fabrication methods are well developed for rigid substrates, direct application or slight modification of conventional processes for flexible electronics fabrication cannot work. The future flexible electronics fabrication requires totally new low-temperature process development optimized for flexible substrate and it should be based on new material too. Here we present a simple approach to developing a flexible electronics fabrication without using conventional vacuum deposition and photolithography. We found that direct metal patterning based on laser-induced local melting of metal nanoparticle ink is a promising low-temperature alternative to vacuum deposition- and photolithography-based conventional metal patterning processes. The digital nature of the proposed direct metal patterning process removes the need for expensive photomask and allows easy design modification and short turnaround time. This new process can be extremely useful for current small-volume, large-variety manufacturing paradigms. Besides, simple, scalable, fast and low-temperature processes can lead to cost-effective fabrication methods on a large-area polymer substrate. The developed process was successfully applied to demonstrate high-quality Ag patterning (2.1 µΩ·cm) and high-performance flexible organic field effect transistor arrays.

Copper oxide particles of various sizes and constituent phases were used to form conductive circuits by means of photonic sintering. With the assistance of extremely low-energy-density xenon flash pulses (1.34 J/cm2), a mixture of nano/submicron copper oxide particles can be reduced in several seconds to form electrical conductive copper films or circuits exhibiting an average thickness of 6 μm without damaging the underlying polymeric substrate, which is quite unique compared to commercial nano-CuO inks whose sintered structure is usually 1 μm or less. A mixture of submicron/nano copper oxide particles with a weight ratio of 3:1 and increasing the fraction of Cu2O in the copper oxide both decrease the electrical resistivity of the reduced copper. Adding copper formate further improved the continuity of interconnects and, thereby, the electrical conductance. Exposure to three-pulse low-energy-density flashes yields an electrical resistivity of 64.6 μΩ·cm. This study not only shed the possibility to use heat-vulnerate polymers as substrate materials benefiting from extremely low-energy light sources, but also achieved photonic-sintered thick copper films through the adoption of submicron copper oxide particles. [ABSTRACT FROM AUTHOR]