6 results on '"Leonhardt, Alessandra"'
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2. Relation between film thickness and surface doping of MoS2 based field effect transistors
- Author
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Lockhart de la Rosa, César J., primary, Arutchelvan, Goutham, additional, Leonhardt, Alessandra, additional, Huyghebaert, Cedric, additional, Radu, Iuliana, additional, Heyns, Marc, additional, and De Gendt, Stefan, additional
- Published
- 2018
- Full Text
- View/download PDF
3. Fabricação de protótipos de FinFETs usando métodos alternativos
- Author
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Leonhardt, Alessandra, 1990, Manêra, Leandro Tiago, 1977, Diniz, José Alexandre, 1964, Gendt, Stefan Jozef Emma Alfons De, Swart, Jacobus Willibrordus, Universidade Estadual de Campinas. Faculdade de Engenharia Elétrica e de Computação, Programa de Pós-Graduação em Engenharia Elétrica, and UNIVERSIDADE ESTADUAL DE CAMPINAS
- Subjects
Microelectronics ,Feixes de íons focalizados ,Focused ion beam ,Transistores de efeito de campo ,Field effect transistors ,Microeletrônica - Abstract
Orientadores: Leandro Tiago Manera, José Alexandre Diniz Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de Computação Resumo: Este trabalho explora métodos alternativos para fabricação de protótipos de FinFETs. Diferentes métodos de definição de fin (fresagem de máscara de Al por feixe de íon focalizado e litografia por feixe focalizado de íons de gálio) são explorados, buscando flexibilidade na definição do número de fins, bem como a altura dos fins. Diferentes estruturas de porta são aplicados nos FinFETs fabricados, com dois materiais dielétricos diferentes (SiON e TiAlON) e dois métodos diferentes para a formação de TiN como eletrodo de porta. O processo de fabricação detalhado é fornecida e discutido, com especial atenção às dificuldades e desafios enfrentados. Etapas de fabricação são cuidadosamente avaliadas, apresentando detalhes e parâmetros de forma que o processo possa ser replicado. Caracterizações morfológicas e elétricas são realizadas nos FinFETs fabricadas. Com a litografia por feixe focalizado de íons de gálio, FinFETs com nove fins em paralelo são fabricados, com largura de fin até 87nm e comportamento elétrico de transistor. Parâmetros elétricos são extraídos, tais como VTH, inclinação de sublimiar, corrente de fuga, mobilidade de portadores, RSD, função trabalho do eletrodo de porta, EOT, e outros. FinFETs com largura fin abaixo de 100nm são apresentados, com inclinação de sublimiar de 120 mV/dec e moblidade de portadores de 372 cm²/V.s, resultados que mostram uma melhoria em relação a trabalhos anteriores, mas ainda deixam espaço para otimizações. Discussões são realizadas, explicando o significado dos parâmetros extraídos, e formas de melhorar os resultados. As diferentes estruturas de porta são avaliados quanto à estabilidade dos parâmetros e densidade de corrente de fuga. Um EOT de 3.6nm é alcançado para o dieléctrico SiON, com densidade de corrente de fuga entre 177uA/cm² e 0.61mA/cm². Desenvolvimentos importantes são feitos no sentido da integração de processos e inovaçoes em termos de métodos de fabricação de protótipos. Trabalhos futuros incluem melhorias na interface de silício-dielétrico e um processo de fabricação auto alinhado para alcançar uma maior transcondutância e acoplamento entre porta e canal, e reduzir a resistência série Abstract: This work explores alternative methods for FinFET prototype fabrication. Different fin definition methods (Al hard mask FIB milling and Ga+ FIB lithography) are explored, aiming for flexibility in defining the number of fins, as well as fin height. Alternative gate stacks are applied in the fabricated FinFETs, with two different dielectric materials (SiON and TiAlON) and two different methods for TiN gate electrode formation. The detailed fabrication process is provided and discussed, with special attention to difficulties and challenges faced. Fabrication steps are carefully evaluated, presenting details and parameters such as that the process could be replicated. Morphological and electrical characterizations are performed on the fabricated FinFETs. With the Ga+ FIB lithography method, working FinFETs with nine parallel fins are fabricated, with fin width down to 87nm. Electrical parameters are extracted, such as VTH, subthreshold slope, leakage current, low field mobility, RSD, gate electrode work function, EOT, and others. Working FinFETs with sub-100nm fin width are presented, with subthreshold slope of 120mV/dec and low field mobility of 372cm²/v.s, results that show an improvement on previous works, but still leave room for optimizations. Discussions are performed, explaining the meaning of the extracted parameters, and ways to improve the results. The different gate stacks are evaluated regarding their parameter stability and leakage current density. An EOT of 3.6nm is achieved for the SiON dielectric, with leakage current density between 177uA/cm² and 0.61mA/cm². Important developments have been made towards process integration and novel prototype fabrication methods. Future works include silicon-dielectric interface improvements and a self aligned process to achieve increased transconductance and gate-to-channel coupling, and reduce the series resistance Mestrado Eletrônica, Microeletrônica e Optoeletrônica Mestra em Engenharia Elétrica CNPQ 161893/2015-5
- Published
- 2016
4. Ga+ focused ion beam lithography as a viable alternative for multiple fin field effect transistor prototyping
- Author
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Leonhardt, Alessandra, primary, Puydinger dos Santos, Marcos Vinicius, additional, Diniz, José Alexandre, additional, Manera, Leandro Tiago, additional, and Lima, Lucas Petersen Barbosa, additional
- Published
- 2016
- Full Text
- View/download PDF
5. Relation between film thickness and surface doping of MoS2 based field effect transistors.
- Author
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Lockhart de la Rosa, César J., Arutchelvan, Goutham, Leonhardt, Alessandra, Huyghebaert, Cedric, Radu, Iuliana, Heyns, Marc, and De Gendt, Stefan
- Subjects
MOLYBDENUM sulfides ,FIELD-effect transistors ,DOPING agents (Chemistry) - Abstract
Ultra-thin MoS
2 film doping through surface functionalization with physically adsorbed species is of great interest due to its ability to dope the film without reduction in the carrier mobility. However, there is a need for understanding how the thickness of the MoS2 film is related to the induced surface doping for improved electrical performance. In this work, we report on the relation of MoS2 film thickness with the doping effect induced by the n-dopant adsorbate poly(vinyl-alcohol). Field effect transistors built using MoS2 films of different thicknesses were electrically characterized, and it was observed that theI ratio after doping in thin films is more than four orders of magnitudes greater when compared with thick films. Additionally, a semi-classical model tuned with the experimental devices was used to understand the spatial distribution of charge in the channel and explain the observed behavior. From the simulation results, it was revealed that the two-dimensional carrier density induced by the adsorbate is distributed rather uniformly along the complete channel for thin films (<5.2 nm) contrary to what happens for thicker films. [ABSTRACT FROM AUTHOR]ON /OFF - Published
- 2018
- Full Text
- View/download PDF
6. Ga+ focused ion beam lithography as a viable alternative for multiple fin field effect transistor prototyping.
- Author
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Leonhardt, Alessandra, dos Sants, Marcos Vinicius Puydinger, Diniz, José Alexandre, Manera, Leandro Tiago, and Lima, Lucas Petersen Barbosa
- Subjects
ION beam lithography ,TRANSISTORS ,PROTOTYPES ,FABRICATION (Manufacturing) ,MILLING (Metalwork) - Abstract
A novel method for fast and flexible fin field effect transistor (FinFET) prototyping using a Ga
+ focused ion beam is presented. The fin width and height control is explored, aiming for the successful fabrication of prototypes. This method results in fins with negligible Ga incorporation, when compared to traditional focused ion beam milling techniques. Our method for multiple fin FinFET prototyping enables advanced device fabrication and great flexibility regarding both the number of fins and fin width. Working FinFET prototypes have been fabricated using the proposed fin definition method, and the electrical characterization is discussed. [ABSTRACT FROM AUTHOR]- Published
- 2016
- Full Text
- View/download PDF
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