1. Ultrashort vertical-channel MoS2 transistor using a self-aligned contact.
- Author
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Liu, Liting, Chen, Yang, Chen, Long, Xie, Biao, Li, Guoli, Kong, Lingan, Tao, Quanyang, Li, Zhiwei, Yang, Xiaokun, Lu, Zheyi, Ma, Likuan, Lu, Donglin, Yang, Xiangdong, and Liu, Yuan
- Abstract
Two-dimensional (2D) semiconductors hold great promises for ultra-scaled transistors. In particular, the gate length of MoS2 transistor has been scaled to 1 nm and 0.3 nm using single wall carbon nanotube and graphene, respectively. However, simultaneously scaling the channel length of these short-gate transistor is still challenging, and could be largely attributed to the processing difficulties to precisely align source-drain contact with gate electrode. Here, we report a self-alignment process for realizing ultra-scaled 2D transistors. By mechanically folding a graphene/BN/MoS2 heterostructure, source-drain metals could be precisely aligned around the folded edge, and the channel length is only dictated by heterostructure thickness. Together, we could realize sub-1 nm gate length and sub-50 nm channel length for vertical MoS2 transistor simultaneously. The self-aligned device exhibits on-off ratio over 105 and on-state current of 250 μA/μm at 4 V bias, which is over 40 times higher compared to control sample without self-alignment process.
- Published
- 2024