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In this article, this research demonstrates the influence of in-situ introduction of H2 into the working gas on the physical properties of post-annealed In2O3 thin films and the performance of associated devices. A gradual increase in the H2 ratio leads to improved film quality, as indicated by spectroscopic ellipsometry, X-ray photoelectron spectroscopy, and atomic force microscope analyses showing a reduction in defect states such as band-tail states and VO in the film, and a smoother surface morphology with the root mean square roughness approximately 0.446 nm. Furthermore, this hydrogen doping effect results in a distinct shift in the device's threshold voltage toward the positive direction, and an improvement in the field-effect mobility and subthreshold swing. Consequently, a high-performance In2O3:H TFT is developed, exhibiting a field-effect mobility of 47.8 cm2/Vs, threshold voltage of −4.1 V and subthreshold swing of 0.25 V/dec. These findings highlight the potential of in-situ H doping as a promising approach to regulate In2O3-based TFTs. [ABSTRACT FROM AUTHOR]

High‐performance bilayer In2O3/IGZO thin‐film transistors (TFTs) fabricated by pulsed laser deposition are reported. The TFTs exhibit an on/off current ratio of 109, a reversed subthreshold slope (ss) of 0.08 V dec−1, and a high saturation mobility of 47.9 cm2 V−1 s−1. The reliability of the mobility values is critically validated and assessed by four‐probe measurements, the transfer‐length method, and the temperature‐dependence. X‐ray photoelectron spectra are combined with C–V measurements to characterize the interface, and the results show that a two‐dimensional electron gas (2DEG)‐like state accumulates at the In2O3/IGZO interface. However, this state only forms in the subthreshold region and does not cause the high carrier mobility in the region above the threshold. Instead, the enhanced carrier mobility results from the intrinsic high mobility of the In2O3, the smooth surface, and the low‐defect states in the In2O3/IGZO bilayer with a good percolation transport path. [ABSTRACT FROM AUTHOR]

Abstract: Sleep disturbances are among the most prevalent neuropsychiatric symptoms in individuals who have recovered from severe acute respiratory syndrome coronavirus 2 infections. Previous studies have demonstrated abnormal brain structures in patients with sleep disturbances who have recovered from coronavirus disease 2019 (COVID-19). However, neuroimaging studies on sleep disturbances caused by COVID-19 are scarce, and existing studies have primarily focused on the long-term effects of the virus, with minimal acute phase data. As a result, little is known about the pathophysiology of sleep disturbances in the acute phase of COVID-19. To address this issue, we designed a longitudinal study to investigate whether alterations in brain structure occur during the acute phase of infection, and verified the results using 3-month follow-up data. A total of 26 COVID-19 patients with sleep disturbances (aged 51.5 ± 13.57 years, 8 women and 18 men), 27 COVID-19 patients without sleep disturbances (aged 47.33 ± 15.98 years, 9 women and 18 men), and 31 age-and gender-matched healthy controls (aged 49.19 ± 17.51 years, 9 women and 22 men) were included in this study. Eleven COVID-19 patients with sleep disturbances were included in a longitudinal analysis. We found that COVID-19 patients with sleep disturbances exhibited brain structural changes in almost all brain lobes. The cortical thicknesses of the left pars opercularis and left precuneus were significantly negatively correlated with Pittsburgh Sleep Quality Index scores. Additionally, we observed changes in the volume of the hippocampus and its subfield regions in COVID-19 patients compared with the healthy controls. The 3-month follow-up data revealed indices of altered cerebral structure (cortical thickness, cortical grey matter volume, and cortical surface area) in the frontal-parietal cortex compared with the baseline in COVID-19 patients with sleep disturbances.Our findings indicate that the sleep disturbances patients had altered morphology in the cortical and hippocampal structures during the acute phase of infection and persistent changes in cortical regions at 3 months post-infection. These data improve our understanding of the pathophysiology of sleep disturbances caused by COVID-19., (Copyright © 2025 Copyright: © 2025 Neural Regeneration Research.)

Introduction: This study aimed to evaluate morphological changes in cortical and subcortical regions and their asymmetrical differences in individuals with subjective cognitive decline (SCD) and mild cognitive impairment (MCI). These morphological changes may provide valuable insights into the early diagnosis and treatment of Alzheimer's disease (AD)., Methods: We conducted structural MRI scans on a cohort comprising 62 SCD patients, 97 MCI patients, and 70 age-, sex-, and years of education-matched healthy controls (HC). Using Freesurfer, we quantified surface area, thickness, the local gyrification index (LGI) of cortical regions, and the volume of subcortical nuclei. Asymmetry measures were also calculated. Additionally, we explored the correlation between morphological changes and clinical variables related to cognitive decline., Results: Compared to HC, patients with MCI exhibited predominantly left-sided surface morphological changes in various brain regions, including the transverse temporal gyrus, superior temporal gyrus, insula, and pars opercularis. SCD patients showed relatively minor surface morphological changes, primarily in the insula and pars triangularis. Furthermore, MCI patients demonstrated reduced volumes in the anterior-superior region of the right hypothalamus, the fimbria of the bilateral hippocampus, and the anterior region of the left thalamus. These observed morphological changes were significantly associated with clinical ratings of cognitive decline., Conclusion: The findings of this study suggest that cortical and subcortical morphometric changes may contribute to cognitive impairment in MCI, while compensatory mechanisms may be at play in SCD to preserve cognitive function. These insights have the potential to aid in the early diagnosis and treatment of AD., Competing Interests: The authors declare that the research was conducted in the absence of any commercial or financial relationships that could be construed as a potential conflict of interest. The author(s) declared that they were an editorial board member of Frontiers, at the time of submission. This had no impact on the peer review process and the final decision., (Copyright © 2023 Yang, Liang, Wei, Liu, Li, Huang, Zhang, Li and Deng.)

Phase (composition) is known to play a key role in determining the electronic and optical properties of amorphous oxide semiconductors. In this work, modulating the ultrafast nonlinear optical (NLO) response of SnO 2 and SnO thin films by tuning oxygen partial pressure during film sputtering is explored. Femtosecond Z-scan results demonstrate that intermediate phases have no profound impact on the two-photon absorption (TPA) response of SnO 2 and SnO films. Interestingly, the magnitude of the effective nonlinear absorption coefficient (β eff ) of both intermediate SnO 2-x and SnO x are enhanced after the change of Sn 2+ /Sn 4+ composition ratio, as measured by picosecond Z-scan technique. Femtosecond degenerate pump-probe measurements show that intermediate phases accelerate the carrier trapping and improve the defect-related carrier absorption in SnO x (SnO-rich) film, while intermediate phase suppress the TPA response of SnO 2-x (SnO 2 -rich) films, therefore carrier-induced absorption dominates the NLO behavior of SnO 2-x film on picosecond regime. Our results indicate a simple and effective way to modulate the NLO response of transparent conductive oxide SnO 2 and SnO.