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This study investigates InSnZnO thin films deposited using mist chemical vapor deposition with different nitrogen (N 2)/oxygen (O 2) ratios of carrier gases. The crystallinity and bandgap of InSnZnO are not affected by the carrier gases; however, the content of the oxygen deficiency of the InSnZnO thin films reduces when the N 2 /O 2 mixed carrier gases have higher oxygen ratio. The InSnZnO thin-film transistor (TFT) shows the highest field-effect mobility (65.04 cm2V−1s−1) when N 2 is used as the carrier gas to deposit the InSnZnO thin film. Although the field-effect mobility of the InSnZnO TFT that uses the N 2 (60 vol%)/O 2 (40 vol%) mixed carrier gas to deposit InSnZnO thin film is the lowest (47.65 cm2V−1s−1), it is still higher than those of the amorphous InGaZnO thin film transistors (∼10 cm2V−1s−1). Furthermore, the InSnZnO TFT using the N 2 (60 vol%)/O 2 (40 vol%) mixed carrier gas to deposit InSnZnO thin film exhibits the steepest subthreshold slope (102 mV/dec), the largest on/off current ratio (4.6 × 107), and the most stable electrical characteristics after the negative bias stress test for 10,800 s. [ABSTRACT FROM AUTHOR]

A method to extract the interface states (Nit) located in the center area (center Nit) and the Nit located in the corner region (corner Nit) of nand Flash devices is presented in this paper. This Nit extraction method is based on a careful combination of charge-pumping current data, technology computer-aided-design simulation results, and the “control gate (CG)-modulated corner effect,” where “CG-modulated corner effect” refers to the fact that the electron density in the corner region of the transistor is greatly affected by the bias applied to CG. Using this Nit extraction method, the amounts of center Nit and corner Nit of a given nand Flash device can be analyzed. In addition, among devices with various widths of active area, the narrower width device showing worse corner Nit can be demonstrated. Furthermore, the generation of center Nit and corner Nit for a device under program/erase cycle stress is explored. Our Nit extraction method will be useful to analyze not only the characteristics of fresh nand Flash devices but also the reliability of aged nand Flash devices. [ABSTRACT FROM AUTHOR]