1. Modelling the Self-Organization of Boron Clusters in Silicon
- Author
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RUSSIAN ACADEMY OF SCIENCES MOSCOW KELDYSH INST OF APPLIED MATHEMATICS, Malinetskii, G. G., Potapov, A. B., Stepanova, M. G., RUSSIAN ACADEMY OF SCIENCES MOSCOW KELDYSH INST OF APPLIED MATHEMATICS, Malinetskii, G. G., Potapov, A. B., and Stepanova, M. G.
- Abstract
The paper illustrates application the theory of self organization to practical problems in the physics on nanostructures. Starting from the principles of the theory of self-organization, the formation of dissipative structures as found experimentally in annealed highly-boron-doped silicon samples is explained. A qualitative "reaction-diffusion" model is developed which reproduces the formation of spatially ordered boron clusters distribution in the form of equidistant maxima. Perspectives of more exact quantitative models describing the extraordinary evolution of boron dopant in silicon are discussed., Pres: 6th Int Symp Nanostructures: Physics and Technology, St Petersburg, Russia. 22-26 Jun 1998. p272-275. This article is from ADA406591 Nanostructures: Physics and Technology International Symposium (6th) held in St. Petersburg, Russia on June 22-26, 1998 Proceedings
- Published
- 1998