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In this paper we analyse the impact of temperature variations on design parameters of CNTFET with particular reference to the output and trans-characteristics, the output resistance, the transconductance and cut-off frequency. The analysis of CNTFET I-V characteristics allows to say that, except for the transition regions, there are very slight differences with temperature variations., Paper published in International Journal of Advances in Engineering & Technology (IJAET), Volume 14 Issue 4, pp. 44-51, August 2021. Available online at https://www.ijaet.org/media/1I64-IJAET1404172-v14-i4-pp44-51.pdf, {"references":["R. Marani, A. G. Perri: Il futuro della tecnologia: le nanotecnologie, LA COMUNICAZIONE: NOTE, RECENSIONI & NOTIZIE, Istituto Superiore delle Comunicazioni e delle Tecnologie dell'Informazione, Rome, LVI, ISSN: 1590-864X, 169 – 178, (2009).","A. G. Perri: Dispositivi Elettronici Avanzati, Progedit Editor, Bari, Italy; ISBN: 978-88-6194-081-9, (2018).","A.G. Perri, R. Marani: CNTFET Electronics: Design Principles, Progedit Editor, Bari, Italy, ISBN: 978-88-6194-307-0, (2017).","A. G. Perri: Modelling and Simulations in Electronic and Optoelectronic Engineering, Research Signpost, Kerata, ISBN: 978-81-308-0450-7, (2011).","G. Gelao, R. Marani, R. Diana, A.G. Perri: A Semi-Empirical SPICE Model for n-type Conventional CNTFETs, IEEE Transactions on Nanotechnology, 10(3), 506-512, (2011).","R. Marani, A.G. Perri: A Compact, Semi-empirical Model of Carbon Nanotube Field Effect Transistors oriented to Simulation Software, Current Nanoscience, 7(2), 245-253, (2011).","R. Marani, A.G. Perri: Simulation of CNTFET Digital Circuits: a Verilog-A Implementation, International Journal of Research and Reviews in Applied Sciences, 11(1), 74-81, (2012).","R. Marani, A.G. Perri: Modelling and Implementation of Subthreshold Currents in Schottky Barrier CNTFETs for Digital Applications, International Journal of Research and Reviews in Applied Sciences, 11(3), 377-385, (2012).","R. Marani, G. Gelao, A.G. Perri: Comparison of ABM SPICE library with Verilog-A for Compact CNTFET model implementation, Current Nanoscience, 8(4), 556-565, (2012).","R. Marani, G. Gelao, A.G. Perri: Modelling of Carbon Nanotube Field Effect Transistors oriented to SPICE software for A/D circuit design, Microelectronics Journal, 44(1), 33-39, (2013).","R. Marani, A.G. Perri: Analysis of CNTFETs Operating in SubThreshold Region for Low Power Digital Applications, ECS Journal of Solid State Science and Technology, 5(2), M1-M4, (2016).","G. Gelao, R. Marani, L. Pizzulli, A.G. Perri: A Model to Improve Analysis of CNTFET Logic Gates in Verilog-A-Part I: Static Analysis, Current Nanoscience, 11(4), 515-526, (2015).","G. Gelao, R. Marani, L. Pizzulli, A.G. Perri: A Model to Improve Analysis of CNTFET Logic Gates in Verilog-A-Part I: Dynamic Analysis, Current Nanoscience, 11(6), p. 770-783, (2015).","R. Marani, A.G. Perri: A Simulation Study of Analogue and Logic Circuits with CNTFETs, ECS Journal of Solid State Science and Technology, 5(6), M38-M43, (2016).","R. Marani, A.G. Perri: A Comparison of CNTFET Models through the Design of a SRAM Cell, ECS Journal of Solid State Science and Technology, 5(10), M118-M1, (2016).","Verilog-AMS language reference manual, Version 2.2, (2014).","P.E. Allen, D.R. Holberg: CMOS Analog Circuit Design, Oxford University Press, (2013).","R. Marani, G. Gelao, A.G. Perri: A Compact Noise Model for C-CNTFETs, ECS Journal of Solid State Science and Technology, 6(4), pp. M118–M126, (2017).","R. Marani, and A.G. Perri: A Review on the Study of Temperature Effects in the Design of A/D Circuits based on CNTFET, Current Nanoscience, 15(5), p. 471-480, (2019).","R. Marani, A.G. Perri: Effects of Parasitic Elements of Interconnection Lines in CNT Embedded Integrated Circuits, ECS Journal of Solid State Science and Technology, 9(2), (2020)."]}

In this paper we analyse the impact of temperature variations in the design of an Operational Transconductance Amplifier (OTA) based on CNTFET, where the active load is a cascode current sink mirror. In particular we determine the Voltage Transfer Characteristics (VTCs) and the Common Mode Rejection Ratio (CMRR) at different temperatures., Paper published in International Journal of Advances in Engineering & Technology (IJAET), Volume 14 Issue 4, pp. 71-77, October 2021. https://www.ijaet.org/media/2I65-IJAET1405666-v14-i5-pp71-77.pdf

We present a aimulation study of noise behavior in basic current mirror using CNTFET and MOSFET, obtaining that the output noise current is always higher for the CNTFET than for the MOS device. Keywords— CNTFET, MOSFET, Modelling, Current Mirror Design, Advanced Design System (ADS).

The detection of internal defects in composite ma- terials, due to anomalies during the production processes, is a big issue especially for the production of large structures in aeronautic contexts. The costs of the repair processes can weigh upon the total costs, and sometimes the repair itself can be unfeasible and cause the material to be rejected. The early detection of anomalies during the production phase can interrupt the production chain and the solution to the detected problems can be soon found. Aim of this research is to propose the use of appropriate sensorial setups, based on vision and laser, to monitor the production line and to study signal processing methodologies to detect anomalies in the stratification of composite materials.

In this paper the state of art of semiconductors devices for Industrial Pulse-Width Modulation (PWM) Inverters is presented. The last generations of Insulated Gate Bipolar Transistors (IGBTs), Silicon Carbide (SiC) MOSFETs and Gallium Nitride (GaN) Transistors are introduced and analysed. At last a comparison between Si-based IGBT and SiC MOSFET, obtained by SPICE simulations, is presented in order to identify the device which makes the PWM inverter more efficient., Paper published in International Journal of Advances in Engineering & Technology, Vol. 10, Issue 1, pp. 52-65, Feb., 2017. Available online at: http://www.ijaet.org/media/6I37-IJAET1001113-v10-iss1-pp52-65.pdf, {"references":["T. Fujihira, et al., \"The State-of-The-Art and Future Trend of Power Semiconductor Devices,\" Proceedings of PCIM Europe 2015, pp. 27-34, Nuremberg, Germany, 19 - 21 May 2015.","K. V. Kumar, et al., \"Simulation and comparison of SPWM and SVPWM control for three phase inverter,\" ARPN Journal of Engineering and Applied Sciences, vol. 5, no. 7, pp. 62-74, 2010.","J. Caldwell, \"Analog Pulse Width Modulation (SLAU508),\" Texas Instruments, 2013.","M. L. H. I. B. B. N. M. N. M. A. S. A. H. Zulkifilie Bin Ibrahim, \"Simulation Investigation of SPWM, THIPWM and SVPWM Techniques for Three Phase Voltage Source Inverter,\" International Journal of Power Electronics and Drive System (IJPEDS), vol. 4, no. 2, pp. 223-232, 2014.","J. Holtz, \"Pulse Width Modulation for Electronic Power Conversion,\" Proceedings of the IEEE, vol. 82, no. 8, pp. 1194-1214, 1994.","B. Cao and L. Chang, \"A Variable Switching Frequency Algorithm to Improve the Total Efficiency of Single-Phase Grid-Connected Inverters,\" Applied Power Electronics Conference and Exposition (APEC), 2013 Twenty-Eighth Annual IEEE, pp. 2310-1315, 2013.","A. G. Perri, \"Fondamenti di Dispositivi Elettronici,\" Ed. Progedit, Bari, Italy, ISBN 978-88-6194-080-2, 2016.","A. G. Perri, \"Dispositivi Elettronici Avanzati,\" Ed. Progedit, Bari, Italy, ISBN 978-88-6194-081-9, 2016.","R. Vaid and N. Padha, \"Comparative Study of Power MOSFET device structures,\" Indian Journal of Pure & Applied Physics, vol. 43, pp. 980-988, 2005.","Silva, E. R. R.G. Projeto de uma Turbina Eólica de Eixo Horizontal. Projeto de Graduação apresentado ao Curso de Engenharia Mecânica da Escola Politécnica, Universidade Federal do Rio de Janeiro. 2013.","A. Sattar, \"IXYS Power MOSFET Products (IXAN0062),\" IXYS Corporation, http://ixdev.ixys.com","A. Elasser and T. P. Chow, \"Silicon Carbide Benefits and Advantages for Power Electronics Circuits and Systems,\" Proceedings of the IEEE, vol. 90, no. 6, pp. 969-986, 2002.","J. B. Casady, et al., \"New Generation 10 kV SiC Power MOSFET and Diodes for Industrial Applications,\" Proceedings of PCIM Europe 2015, Nuremberg, Germany, 19 - 21 May 2015.","A. Sattar, \"Insulated Gate Bipolar Transistor (IGBT) Basics (IXAN0063),\" IXYS Corporation, http://ixdev.ixys.com","\"IGBT Fundamentals,\" SIEMENS Semiconductor Group","E. R. Motto, , et al., \"Characteristics of a 1200V PT IGBT With Trench Gate and Local Life Time Control,\" 1998 Industry Applications Conference, vol. 2, pp. 811-816, 1998.","T. Heinzel, et al., \"The New High Power Density 7th Generation IGBT Module for Compact Power Conversion Systems,\" Proceedings of PCIM Europe 2015, pp. 1-9, Nuremberg, Germany, 19 - 21 May 2015.","\"STGW15H120DF2 Datasheet (DocID023751 Rev 5),\" ST Microelectronics, 2015","\"SCT20N120 Datasheet (DocID026413 Rev 4),\" ST Microelectronics, 2015","K. Peng, et al., \"Characterization and Modeling of SiC MOSFET Body Diode,\" 2016 IEEE Applied Power Electronics Conference and Exposition (APEC), pp. 2127-2135, 2016.","M. Nawaz and K. Ilves, \"On the comparative assessment of 1.7 kV, 300 A full SiC-MOSFET and Si-IGBT power modules,\" 2016 IEEE Applied Power Electronics Conference and Exposition (APEC), pp. 276-282, 2016."]}

In this paper we present an electronic system to perform a non-invasive measurement of the blood pressure based on the oscillometric method, which does not suffer from the limitations of the well-known auscultatory one. Moreover the proposed system is able to evaluate both the systolic and diastolic blood pressure values and makes use of a microcontroller and a Sallen-Key active filter. With reference to other similar devices, a great improvement of our measurement system is achieved since it performs the transmission of the systolic and diastolic pressure values to a remote computer. This aspect is very important when the simultaneous monitoring of multi-patients is required. The proposed system, prototyped and tested at the Electron Devices Laboratory (Electrical and Information Engineering Department) of Polytechnic University of Bari, Italy, is characterized by originality, by plainness of use and by a very high level of automation (so called intelligent system)., Comment: 13 pages, 15 figures, accepted for pubblication in International Journal of Advances in Engineering & Technology, Vol. 5, Issue 2, January 2013

Biomedical Electronic Systems to Improve the Healthcare Quality and Efficiency

Modelling and Design of Photonic Bandgap Devices: a Microwave Accelerating Cavity for Cancer Hadrontherapy