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The nucleus of the radioisotope thorium-229 (${}^{229}$Th) features an isomer with an exceptionally low excitation energy that enables direct laser manipulation of nuclear states. For this reason, it is a leading candidate for use in next-generation optical clocks. This nuclear clock will be a unique tool, amongst others, for tests of fundamental physics. While first indirect experimental evidence for the existence of such an extraordinary nuclear state is significantly older, the proof of existence has been delivered only recently by observing the isomer's electron conversion decay and its hyperfine structure in a laser spectroscopy study, revealing information on the isomer's excitation energy, nuclear spin and electromagnetic moments. Further studies reported the electron conversion lifetime and refined the isomer's energy. In spite of recent progress, the isomer's radiative decay, a key ingredient for the development of a nuclear clock, remained unobserved. In this Letter, we report the detection of the radiative decay of this low-energy isomer in thorium-229 (${}^{229\mathrm{m}}$Th). By performing vacuum-ultraviolet spectroscopy of ${}^{229\mathrm{m}}$Th incorporated into large-bandgap CaF${}_2$ and MgF${}_2$ crystals at the ISOLDE facility at CERN, the photon vacuum wavelength of the isomer's decay is measured as 148.71(42) nm, corresponding to an excitation energy of 8.338(24) eV. This value is in agreement with recent measurements, and decreases the uncertainty by a factor of seven. The half-life of ${}^{229\mathrm{m}}$Th embedded in MgF${}_2$ is determined to be 670(102) s. The observation of the radiative decay in a large-bandgap crystal has important consequences for the design of a future nuclear clock and the improved uncertainty of the energy eases the search for direct laser excitation of the atomic nucleus.

The application of new materials in nanotechnology opens new perspectives and enables ground-breaking innovations. Two-dimensional van der Waals materials and more specific, 2D chalcogenides are a promising class of new materials awaiting their usage in the semiconductor industry. However, the integration of van der Waals materials relying on industry-compatible manufacturing processes is still a major challenge. This is currently restricting the application of these new materials to the research laboratories environment only. The large-area and single-crystalline growth of van der Waals materials is one of the most important requirements to meet the challenging demands implied by the semiconductor industry. This review contributes to a more generalized understanding on the integration of van der Waals materials - and in more specific 2D chalcogenides - through the growth process of epitaxy. This, can pursue further the aspiration of large-area, single-crystalline and defect-free epitaxial integration of (quasi) van der Waals homo- and heterostructures into the great world of the semiconductor industry.

Defect-free epitaxial growth of 2D materials is one of the holy grails for a successful integration of van der Waals (vdW) materials in the semiconductor industry. The large-area (quasi-)vdW epitaxy of layered 2D chalcogenides is consequently carefully being researched since these materials hold very promising properties for future nanoelectronic applications. The formation of defects such as stacking faults like 60o twins and consequently 60o grain boundaries is still of major concern for the defect-free epitaxial growth of 2D chalcogenides. Although growth strategies to overcome the occurrence of these defects are currently being considered, more fundamental understanding on the origin of these defects at the initial stages of the growth is highly essential. Therefore this work focuses on the understanding of 60o twin formation in (quasi-)vdW epitaxy of 2D chalcogenides relying on systematic molecular beam epitaxy (MBE) experiments supported by density functional theory (DFT) calculations. The MBE experiments reveal the striking difference in 60o twin formation between WSe2 and Bi2Se3 in both quasi-vdW heteroepitaxy and vdW homoepitaxy, which from our DFT calculations links to the difference in interlayer vdW coupling strength. The stronger interlayer vdW coupling in Bi2Se3 compared to WSe2 results in a striking enhanced control on twin formation and hence shows significantly more promise for defect-free epitaxial integration. This interesting aspect of (quasi-)vdW epitaxy reveals that the strength of interlayer vdW coupling is key for functional 2D materials and opens perspectives for other vdW materials sharing strong interlayer interactions.

Fully exploiting the silicon photonics platform requires a fundamentally new approach to realize high-performance laser sources that can be integrated directly using wafer-scale fabrication methods. Direct band gap III-V semiconductors allow efficient light generation but the large mismatch in lattice constant, thermal expansion and crystal polarity makes their epitaxial growth directly on silicon extremely complex. Here, using a selective area growth technique in confined regions, we surpass this fundamental limit and demonstrate an optically pumped InP-based distributed feedback (DFB) laser array grown on (001)-Silicon operating at room temperature and suitable for wavelength-division-multiplexing applications. The novel epitaxial technology suppresses threading dislocations and anti-phase boundaries to a less than 20nm thick layer not affecting the device performance. Using an in-plane laser cavity defined by standard top-down lithographic patterning together with a high yield and high uniformity provides scalability and a straightforward path towards cost-effective co-integration with photonic circuits and III-V FINFET logic.