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Integration of a complementary metal-oxide semiconductor (CMOS) and monolayer graphene is a significant step toward realizing low-cost, low-power, heterogeneous nanoelectronic devices based on two-dimensional materials such as gas sensors capable of enabling future mobile sensor networks for the Internet of Things (IoT). But CMOS and post-CMOS process parameters such as temperature and material limits, and the low-power requirements of untethered sensors in general, pose considerable barriers to heterogeneous integration. We demonstrate the first monolithically integrated CMOS-monolayer graphene gas sensor, with a minimal number of post-CMOS processing steps, to realize a gas sensor platform that combines the superior gas sensitivity of monolayer graphene with the low power consumption and cost advantages of a silicon CMOS platform. Mature 0.18 µm CMOS technology provides the driving circuit for directly integrated graphene chemiresistive junctions in a radio frequency (RF) circuit platform. This work provides important advances in scalable and feasible RF gas sensors specifically, and toward monolithic heterogeneous graphene–CMOS integration generally. The combination of monolayer graphene with a silicon-based CMOS platform results in a monolithically integrated gas sensor. A team led by Deji Akinwande at the University of Texas at Austin developed a graphene-based gas sensing platform that leverages the remarkable gas sensitivity of graphene and the well-established advantages of silicon technology. Using a commercially available 0.18 μm CMOS radio-frequency (RF) circuit, the authors fabricated graphene chemi-resistive junctions atop the CMOS readout circuit, whereby the interaction between gas molecules and graphene can be read as an output frequency while minimizing the number of post-processing steps. The built-in RF functionalities enable a direct wireless connection with the transducer and offer reduced flicker noise, as opposed to direct-current sensors.