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High-performance P-type cuprous oxide (Cu2O) film was prepared at room temperature by high power impulse magnetron sputtering. Optical emission spectra revealed that the ratio of Cu radicals/ions in the plasma significantly decreased with increasing process pressure due to the reduction of sputtering yield as the Cu target surface was oxidized by the increased oxygen radicals/ions. In addition, the increase of self-sputtering yield for Cu cations with increasing process pressure reduced the arrival ratio of Cu species at the substrate surface. As a result, the film crystal phase transformed from Cu2O to Cu4O3 and CuO with increasing process pressure. X-ray photoelectron spectra and Hall effect test results revealed that the oxygen vacancy defects in the films were passivated by the increased oxygen species at higher process pressure, leading to the inhibition of electron background and the emergence of net hole concentration. A mobility of 37.3 cm2/V·s was achieved, which is very high for room-temperature-deposited Cu2O film and comparable to high-temperature (300–600 °C) deposited/post-annealed Cu2O film. Finally, Cu2O thin film transistors (TFTs) exhibited reasonable switching characteristics with a low off-current of 0.3 nA without post-annealing treatment, showing an advantage in low-temperature preparation.

High-k hafnium oxide (HfO2) film was prepared by high power impulse magnetron sputtering (HiPIMS). The influences of oxygen supply on the plasma state, film properties and TFT performance were investigated. The films are near-stoichiometric and preferentially (−1 1 1)-orientated. When the oxygen supply increased from 1% to 3%, the excitation/ionization rate of the plasma species increased, leading to higher crystallinity, higher density, and lower oxygen vacancy defect concentration of the film, therefore improving the dielectric properties of the film. When the oxygen supply further increased to 5%, the excitation/ionization rate decreased, thereby leading to lower crystallinity, lower density, and higher oxygen vacancy defect concentration of the film, therefore deteriorating the dielectric properties of the film. The film deposited at 3% oxygen supply exhibited the best dielectric properties with the highest k value of 24 and the highest breakdown-electric field (4.7 MV/cm), which should be attributed to the high crystallinity, high density and low oxygen vacancy defect concentration of the film. Finally, transparent thin film transistors (TFTs) with ITO gate electrode, HfO2 gate dielectric layer and indium-gallium-zinc oxide channel were fabricated on flexible colorless polyimide substrate at full room temperature by all HiPIMS process. The fixed positive charges and k value of HfO2 film have significant effects on the TFT performance. The best TFT exhibited good electrical performance, featuring a remarkably low subthreshold swing of 0.13 V/decade. It also exhibited fair stability against bending and gate bias stress.

An omnidirectional reflector (ODR) consisted of (MgF2)/Ag was employed in AlGaInP-based vertical red light-emitting diodes (LEDs) in order to increase the light extraction hence the wall-plug efficiency. In this structure, the dielectric MgF2 layer with low refractive index acted as current blocking and reflection enhancing layer. The cylindrical AuZn alloy micro-contacts perforated through the MgF2 layer and played roles in current spreading and injection. The area ratio of AuZn micro-contacts was optimized to improve the performance of the LED. The results indicated that increasing the area ratio of micro-contacts led to the improvement of current injection uniformity and reduction of forward voltage especially at higher injection current, but at the expense of light extraction by reducing reflection. After optimized, the best performance of red-light LEDs can be obtained with 3% area ratio of micro-contacts.

Compared with conventional InGaN Quantum Wells (QWs), staggered InGaN QWs offer improved optical and electronic properties. This work studied the carrier concentration, band structure, overlap of hole and electron wave functions, and polarization field of three-layer staggered QWs in the blue spectral region and analyzed them in detail theoretically to explore the source and the dominant mechanism for improvement. Although theoretical studies indicate that the polarization field in QWs of staggered InGaN QWs is larger, the carrier confinement effect is stronger, and the carrier distribution is more uniform. Therefore, three-layer staggered QWs can improve overlapping of the hole and electron wave functions and then enhance the recombination rate so as to increase the optical output power and electroluminescence intensity. Moreover, the performance of the staggered structure C with the lowest indium content at the center of the well is better than that of the step-staggered structure B.

Indium tin oxide (ITO) thin films were prepared by high power impulse magnetron sputtering (HiPIMS) and annealed in hydrogen-containing forming gas to reduce the film resistivity. The film resistivity reduces by nearly an order of magnitude from 5.6 × 10−3 Ω·cm for the as-deposited film to the lowest value of 6.7 × 10−4 Ω·cm after annealed at 700 °C for 40 min. The role of hydrogen (H) in changing the film properties was explored and discussed in a large temperature range (300–800 °C). When annealed at a low temperature of 300–500 °C, the incorporated H atoms occupied the oxygen sites (Ho), acting as shallow donors that contribute to the increase of carrier concentration, leading to the decrease of film resistivity. When annealed at an intermediate temperature of 500–700 °C, the Ho defects are thermally unstable and decay upon annealing, leading to the reduction of carrier concentration. However, the film resistivity keeps decreasing due to the increase in carrier mobility. Meanwhile, some locally distributed metallic clusters formed due to the reduction effect of H2. When annealed at a high temperature of 700–800 °C, the metal oxide film is severely reduced and transforms to gaseous metal hydride, leading to the dramatic reduction of film thickness and carrier mobility at 750 °C and vanish of the film at 800 °C.

Indium oxide (In2O3) film has excellent optical and electrical properties, which makes it useful for a multitude of applications. The preparation of In2O3 film via atomic layer deposition (ALD) method remains an issue as most of the available In-precursors are inactive and thermally unstable. In this work, In2O3 film was prepared by ALD using a remote O2 plasma as oxidant, which provides highly reactive oxygen radicals, and hence significantly enhancing the film growth. The substrate temperature that determines the adsorption state on the substrate and reaction energy of the precursor was investigated. At low substrate temperature (100–150 °C), the ratio of chemically adsorbed precursors is low, leading to a low growth rate and amorphous structure of the films. An amorphous-to-crystalline transition was observed at 150–200 °C. An ALD window with self-limiting reaction and a reasonable film growth rate was observed in the intermediate temperature range of 225–275 °C. At high substrate temperature (300–350 °C), the film growth rate further increases due to the decomposition of the precursors. The resulting film exhibits a rough surface which consists of coarse grains and obvious grain boundaries. The growth mode and properties of the In2O3 films prepared by plasma-enhanced ALD can be efficiently tuned by varying the substrate temperature.

In this study, aluminum-doped zinc oxide (Al:ZnO) thin films were grown by high-speed atmospheric atomic layer deposition (AALD), and the effects of air annealing on film properties are investigated. The experimental results show that the thermal annealing can significantly reduce the amount of oxygen vacancies defects as evidenced by X-ray photoelectron spectroscopy spectra due to the in-diffusion of oxygen from air to the films. As shown by X-ray diffraction, the annealing repairs the crystalline structure and releases the stress. The absorption coefficient of the films increases with the annealing temperature due to the increased density. The annealing temperature reaching 600 °C leads to relatively significant changes in grain size and band gap. From the results of band gap and Hall-effect measurements, the annealing temperature lower than 600 °C reduces the oxygen vacancies defects acting as shallow donors, while it is suspected that the annealing temperature higher than 600 °C can further remove the oxygen defects introduced mid-gap states.

Zinc oxide (ZnO) attracts much attention owing to its remarkable electrical and optical properties for applications in optoelectronics. In this study, ZnO thin films were prepared by spatial atomic layer deposition with diethylzinc and water as precursors. The substrate temperature was varied from 55 to 135 °C to investigate the effects on the optical, electrical, and structural properties of the films. All ZnO samples exhibit an average transmittance in visible and near-infrared light range exceeding 80% and a resistivity in the range of (3.2−9.0) × 10−3 Ω·cm when deposited on a borosilicate glass with a refractive index of ≈1.52. The transmittance, band gap, refractive index, and extinction coefficient are rarely affected, while the resistivity only slightly decreases with increasing temperature. This technique provides a wide process window for depositing ZnO thin films. The results revealed that the films deposited at a substrate of 55 °C were highly crystalline with a preferential (1 0 0) orientation. In addition, the grains grow larger as the substrate temperature increases. The electrical properties and reliability of ZnO/PET samples are also studied in this paper.

Hydraulic fracturing in the soil core of earth-rockfill dams is a common problem affecting the safety of the dams. Based on fracture tests, a new criterion for hydraulic fracturing in cohesive soil was suggested. Using this criterion, the mechanisms of hydraulic fracturing in cubic soil specimens were investigated. The results indicate that the propagation of the crack in a cubic specimen under water pressure occurs in a mixed mode I-II if the crack face is not perpendicular to any of the principal stresses, and the crack most likely to propagate is the one that is perpendicular to the minor principal stress and propagates in mode I.

In this paper, the nonlinear corrosion model under the combined action of the anticorrosion system and corrosive environment is chosen as the mathematical model of homogeneous corrosion of steel pipe pile foundation for the offshore wind turbine. Based on the mathematical model, a three-dimensional finite element model was established for the steel pipe pile foundation of the offshore wind turbine. And the homogeneous corrosion action of the steel pipe piles was calculated, and the reduction rules of the strength and stability of the steel pipe piles for wind turbines under different corrosion patterns are analyzed. According to the calculation results, the mathematical model can be used in the analysis of corrosion for steel pipe pile in the wind turbine. Under the normal operation conditions, the reduction rules of the strength and stability of the steel pipe piles contain three stages: no influence stage, negative exponential decrease stage, and stable stage. But under the extreme load conditions, the effect of corrosion is enormous for the strength and stability of the steel pipe pile.

Fano's inequality lower bounds the probability of transmission error through a communication channel. Applied to classification problems, it provides a lower bound on the Bayes error rate and motivates the widely used Infomax principle. In modern machine learning, we are often interested in more than just the error rate. In medical diagnosis, different errors incur different cost; hence, the overall risk is cost-sensitive. Two other popular criteria are balanced error rate (BER) and F-score. In this work, we focus on the two-class problem and use a general definition of conditional entropy (including Shannon's as a special case) to derive upper/lower bounds on the optimal F-score, BER and cost-sensitive risk, extending Fano's result. As a consequence, we show that Infomax is not suitable for optimizing F-score or cost-sensitive risk, in that it can potentially lead to low F-score and high risk. For cost-sensitive risk, we propose a new conditional entropy formulation which avoids this inconsistency. In addition, we consider the common practice of using a threshold on the posterior probability to tune performance of a classifier. As is widely known, a threshold of 0.5, where the posteriors cross, minimizes error rate--we derive similar optimal thresholds for F-score and BER. [ABSTRACT FROM AUTHOR]

We present a unifying framework for information theoretic feature selection, bringing almost two decades of research on heuristic filter criteria under a single theoretical interpretation. This is in response to the question: "what are the implicit statistical assumptions of feature selection criteria based on mutual information?". To answer this, we adopt a different strategy than is usual in the feature selection literature--instead of trying to define a criterion, we derive one, directly from a clearly specified objective function: the conditional likelihood of the training labels. While many hand-designed heuristic criteria try to optimize a definition of feature 'relevancy' and 'redundancy', our approach leads to a probabilistic framework which naturally incorporates these concepts. As a result we can unify the numerous criteria published over the last two decades, and show them to be low-order approximations to the exact (but intractable) optimisation problem. The primary contribution is to show that common heuristics for information based feature selection (including Markov Blanket algorithms as a special case) are approximate iterative maximisers of the conditional likelihood. A large empirical study provides strong evidence to favour certain classes of criteria, in particular those that balance the relative size of the relevancy/redundancy terms. Overall we conclude that the JMI criterion (Yang and Moody, 1999; Meyer et al., 2008) provides the best tradeoff in terms of accuracy, stability, and flexibility with small data samples. [ABSTRACT FROM AUTHOR]

Boron-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films are deposited using high frequency 27.12 MHz plasma enhanced chemical vapor deposition system as a window layer of silicon heterojunction (SHJ) solar cells. The CH4 gas flow rate is varied to deposit various a-SiC:H films, and the optical and electrical properties are investigated. The experimental results show that at the CH4 flow rate of 40 sccm the a-SiC:H has a high band gap of 2.1 eV and reduced absorption coefficients in the whole wavelength region, but the electrical conductivity deteriorates. The technology computer aided design simulation for SHJ devices reveal the band discontinuity at i/p interface when the a-SiC:H films are used. For fabricated SHJ solar cell performance, the highest conversion efficiency of 22.14%, which is 0.33% abs higher than that of conventional hydrogenated amorphous silicon window layer, can be obtained when the intermediate band gap (2 eV) a-SiC:H window layer is used.