Search

The mixture between the difference semiconductor quantum dot sensitizer which is cadmium selenide(CdSe) and zinc sulfide (ZnS) into the Dye-synthesis solar cell (DSSCs) can affect the value of resistance and capacity photoanode in the system.In this experiment, each sample consists difference weight percent of Zinc sulfide and the constant weight percent of CdSe. Docter blade technique is used to stick and spread evenly the mixture CdSe/ZnS QD on the surface of the thin film. To prove the assembled of CdSe/ZnS on the thin film were observed using Scanning Electron Microscopy (SEM). The resistance and capacity of the photoanode were characterized by using impedance spectroscopy(EIS). The smallest resistance is 37.1kΩ produce by CdSe/ZnS(20 wt%) and the largest resistance 825KΩ produce by CdSe/ZnS(50 wt%) while the highest capacity is 12 µF in the CdSe/ZnS(40 wt%) and the lowest capacity is CdSe/ZnS(20 wt%) which is 538 nF. The most suitable composition to be used as photoanode is CdSe/ZnS(40 wt%) because it has high capacity and low resistance.

The absorption rate of the photoanode can be influenced by the combination between the difference semiconductor quantum dot sensitizer. Six samples were prepared with difference weight percent (wt%) of ZnS from 0% to 50% and constant wt% of CdSe which then will be called as semiconductor QDs were immersed in 0.5mM of N719 dye. The purity of ZnS powder and CdSe powder was determined using x-ray diffraction (XRD).The ultraviolet-visible spectrophotometry (Uv-Vis) use to investigate the absorption spectrum and absorbance peak of this sample. 50 wt% of ZnS is the best composition to increase the absorbance peak of the photoanode. The Cyclic voltammetry (CV) of varying wt% of ZnS, found that the 40 wt% of ZnS is suitable combination for a DSSC’s photoanode and produced the higher current.