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Monolithic perovskite/c-Si tandem solar cells have attracted enormous research attention and have achieved efficiencies above 30%. This work describes the development of monolithic tandem solar cells based on silicon heterojunction (SHJ) bottom- and perovskite top-cells and highlights light management techniques assisted by optical simulation. We first engineered (i)a-Si:H passivating layers for (100)-oriented flat c-Si surfaces and combined them with various (n)a-Si:H, (n)nc-Si:H, and (n)nc-SiOx:H interfacial layers for SHJ bottom-cells. In a symmetrical configuration, a long minority carrier lifetime of 16.9 ms was achieved when combining (i)a-Si:H bilayers with (n)nc-Si:H (extracted at the minority carrier density of 1015 cm–3). The perovskite sub-cell uses a photostable mixed-halide composition and surface passivation strategies to minimize energetic losses at charge-transport interfaces. This allows tandem efficiencies above 23% (a maximum of 24.6%) to be achieved using all three types of (n)-layers. Observations from experimentally prepared devices and optical simulations indicate that both (n)nc-SiOx:H and (n)nc-Si:H are promising for use in high-efficiency tandem solar cells. This is possible due to minimized reflection at the interfaces between the perovskite and SHJ sub-cells by optimized interference effects, demonstrating the applicability of such light management techniques to various tandem structures.

Thanks to the prominent passivating contact structures, silicon heterojunction (SHJ) solar cell has recently achieved revolutionary advancements in the photovoltaic industry. This is, however, bound to further strengthen its contact performance for gaining the competitive edge in the period of technology transformation. Here, we developed SHJ cells with improved rear contact consisting of a p-type doped nanocrystalline silicon and a tailored transparent conductive oxide. Benefiting from the low contact resistance of hole-selective contacts (2), a high power conversion efficiency of 26.74% together with a record filling factor (FF) of 86.48% were certified on industrial-grade silicon wafers (274 cm2, M6 size). The electrical properties of the modified SHJ cells were thoroughly analyzed in comparison with the normal p-type transporting layer counterparts (i.e., amorphous silicon), and the improved charge carrier transport in behind were also fully demonstrated.

The tandem PV technology can potentially increase the efficiency of PV modules over 30%. To design efficient modules, a quantification of the different losses is important. Herein, a model for quantifying the energy loss mechanisms in PV systems under real-world operating conditions with a level of detail back to the components and their fundamental properties is presented. Totally, 17 losses are defined and divided into four categories (fundamental, optical, electrical, and system losses). As example, a system based on a > 29% two-terminal perovskite/silicon tandem cell is considered. The loss distribution at standard test conditions is compared to four geographical locations. The results show that the thermalization, reflection, and inverter losses increase by 1.2%, 1.1%, and 1.4%, respectively, when operating outdoors. Additionally, it is quantified how fill factor gains partly compensate the current mismatch losses. For example, a mismatch of 7.0% in photocurrent leads to a power mismatch of 1.2%. Therefore, the power mismatch should be used as indicator for mismatch losses instead of a current mismatch. Finally, herein, it is shown that solar tracking increases not only the in-plane irradiance but also the efficiency of the tandem module.

The photovoltaic (PV) module energy rating standard series IEC 61853 does not cover bifacial PV modules. However, the market share of bifacial PV modules has dramatically increased in recent years and is projected to grow. This work demonstrates how Parts 3 and 4 of the IEC 61853 standard could be extended to bifacial modules. First, we develop an irradiance model that uses the data already given in the standard IEC 61853-4 to calculate the irradiance on the rear side of the module. Second, we propose a way to extend the energy yield calculation algorithm IEC 61853-3 to include bifacial modules and make it available to the PV community. This rear irradiance and bifacial energy yield calculation procedure is tested using real outdoor measurements for a nine-month period with a root mean square difference between measured and simulated energy yield of 4.65%. To conclude, we investigate the impact of different climates and normalization on the bifacial module energy rating results.

Due to the inherent uncertainty in photovoltaic (PV) energy generation, an accurate power forecasting is essential to ensure a reliable operation of PV systems and a safe electric grid. Machine learning (ML) techniques have gained popularity on the development of this task due to its increased accuracy. Most literature, however, focuses only on less than 5 PV systems during training process, which does not ensure generalization to unseen systems. When in presence of a large feet, regional forecasts are the norm. Nevertheless, none of these approaches are usable when it comes to monitoring residential PV systems. In this work, we propose a single ML model that is able to predict the individual power of a large fleet of 1102 PV systems. XGBoost algorithm was selected as the most suitable algorithm for the task of PV yield nowcasting due to its performance and ease of use. This algorithm obtains Mean Absolute Error (MAE) of 0.877 kWh (considering an average system size of 4.44 kWp) and Mean Absolute Percentage Error (MAPE) of 23% for hourly data aggregated to daily values. XGBoost predictions for individual PV systems are on average two times better than currently used commercial software. We discuss the lack of a suitable loss function that can combine absolute and relative errors for residential PV yield forecasting. We also point out the lack of an adequate metric to compute the error made on the predictions and provide hints on developing a suitable one.

Silicon heterojunction (SHJ) solar cells have reached high power conversion efficiency owing to their effective passivating contact structures. Improvements in the optoelectronic properties of these contacts can enable higher device efficiency, thus further consolidating the commercial potential of SHJ technology. Here we increase the efficiency of back junction SHJ solar cells with improved back contacts consisting of p-type doped nanocrystalline silicon and a transparent conductive oxide with a low sheet resistance. The electrical properties of the hole-selective contact are analysed and compared with a p-type doped amorphous silicon contact. We demonstrate improvement in the charge carrier transport and a low contact resistivity (2). Eventually, we report a series of certified power conversion efficiencies of up to 26.81% and fill factors up to 86.59% on industry-grade silicon wafers (274 cm2, M6 size).

Passivating contacts based on poly-Si have enabled record-high c-Si solar cell efficiencies due to their excellent surface passivation quality and carrier selectivity. The eventual existence of pinholes within the ultra-thin SiOx layer is one of the key factors for carrier collection, beside the tunneling mechanism. However, pinholes are usually believed to have negative impact on the passivation quality of poly-Si passivating contacts. This work studied the influence of the pinhole density on the passivation quality of ion-implanted poly-Si passivating contacts by decoupling the pinhole generation from the dopants diffusion process by means of two annealing steps: (1) a pre-annealing step at high temperature after the intrinsic poly-Si deposition to visualize the formation of pinholes and (2) a post-annealing step for dopants activation/diffusion after ion-implantation. The pinhole density is quantified in the range of 1✕106 to 3✕108 cm2 by the TMAH selective etching approach. The passivation quality is discussed with respect to the pinhole density and the post-annealing thermal budget (TB) for dopants diffusion. The study shows that a moderate pinhole density does not induce doping profile variations that can be detectable by the coarse spatial resolution of ECV measurements. It is surprising that the existence of pinholes in a moderate density within our thickness fixed SiOx layer can effectively enhance the passivation qualities for both n+ and p+ poly-Si passivating contacts. We speculate the reason is due to the enhanced field-effect passivation at the pinhole surrounding. In fact, the variation of the passivation quality depends on the balance between a strengthened field-effect passivation and an excessive local Auger recombination, being both effects induced by the higher and deeper level of dopants diffused into the c-Si surface through the pinholes.

Single junction crystalline silicon (c-Si) solar cells are reaching their practical efficiency limit whereas perovskite/c-Si tandem solar cells have achieved efficiencies above the theoretical limit of single junction c-Si solar cells. Next to low-thermal budget silicon heterojunction architecture, high-thermal budget carrier-selective passivating contacts (CSPCs) based on polycrystalline-SiOx (poly-SiOx) also constitute a promising architecture for high efficiency perovskite/c-Si tandem solar cells. In this work, we present the development of c-Si bottom cells based on high temperature poly-SiOx CSPCs and demonstrate novel high efficiency four-terminal (4T) and two-terminal (2T) perovskite/c-Si tandem solar cells. First, we tuned the ultra-thin, thermally grown SiOx. Then we optimized the passivation properties of p-type and n-type doped poly-SiOx CSPCs. Here, we have optimized the p-type doped poly-SiOx CSPC on textured interfaces via a two-step annealing process. Finally, we integrated such bottom solar cells in both 4T and 2T tandems, achieving 28.1% and 23.2% conversion efficiency, respectively.

Building Integrated Photovoltaic systems can produce a significant portion of the energy demand of urban areas. Despite their potential, they remain a niche technology that architects and project engineers still find esthetically limited. The dark blue or black color of standard photovoltaic panels is considered inappropriate for restoration projects of historic buildings and represents a major constraint on the development of new projects. This work will provide insight into how the use of optic filters can offer new pathways for architectural acceptance of photovoltaic panels. Optic filters selectively reflect or transmit light by interference and can be designed and fabricated using cost-effective and industrially compatible processes. By using in-house developed ray tracing software coupled with TCAD Sentaurus, more than 400 colors were obtained, and their impact on the opto-electrical performance of interdigitated back-contacted solar cells was studied. Results show a maximum efficiency loss of 1.6% absolute at the perpendicular incidence of light on the range of obtained colors when compared with a standard dark blue solar cell. Simulations for different angles of incidence showed that the current reduction on the standard device could be modeled using a cosine relationship. The colored cells, however, deviated significantly from this relationship. We propose that the angular behavior of any cell (colored or standard) could be simulated by modifying the effective irradiance with scaling factors equal to the ratios of the photogenerated current at any angle with respect to the value at normal incidence. We demonstrate that this approach accurately models the effect of the color filter and allows for an easy transition from a bare cell to an encapsulated one. Due to the spectral effect of the filter, we developed both a spectrally resolved optical model and a two-dimensional finite volume transient thermal model. In case of the optical model, we demonstrate an accuracy in the prediction of the reflectance produced by the color with values of mean bias error (MBE) between 2.0% and 3.9%. As for the thermal model, it was validated by first analyzing a standard model under conditions of nominal operating cell temperature and then comparing its results with published scientific literature. Later, we compare its prediction against 2 weeks of measurements. In both cases the thermal model proves an adequate accuracy, yielding differences below 1.5°C with respect to other scientific works and an MBE value of 0.89°C as well as a root-mean-square error value of 2.10°C for the entire measurement period. With the validated models, we studied the effect of the encapsulation on the color perception. We present two options of color filters. The first one produces relatively low reflectance losses and presents relative annual direct current (DC) energy losses of up to 6.4% for Delft, in the Netherlands, and up to 5.9% for Alice Springs in Australia. However, this first option has very poor color brightness. The second studied filter produces highly saturated bright colors. Improving brightness can increase the annual DC relative losses up to 13.7% and 13.5% for Delft and Alice Springs, respectively. Overall, we demonstrate that colored filters based on multilayer optical stacks are a versatile option for coloring cells that allow a good compromise between esthetics and performance.

The application of titanium dioxide (TiO2) in the photovoltaic field is gaining traction as this material can be deployed in doping-free heterojunction solar cells with the role of electron selective contact. For modeling-based optimization of such contact, knowledge of the titanium oxide defect density of states is crucial. In this paper, we report a method to extract the defect density through nondestructive optical measures, including the contribution given by small polaron optical transitions. The presence of both related to oxygen-vacancy defects and polarons is supported by the results of optical characterizations and the evaluation of previous observations resulting in a defect band fixed at 1 eV below the conduction band edge of the oxide. Solar cells employing pulsed laser deposited-TiO2 electron selective contacts were fabricated and characterized. The J-V curve of these cells showed, however, a S-shape, then a detailed analysis of the reasons of such a behavior was carried out. We use a model involving the series of a standard cell equivalent circuit with a Schottky junction in order to explain these atypical performances. A good matching between the experimental measurements and the adopted theoretical model was obtained. The extracted parameters are listed and analyzed to shade light on the reasons behind the low-performance cells.

Crystalline silicon solar cells with passivating contacts based on doped poly-Si exhibit high optical parasitic losses. Aiming at minimizing these losses, we developed the oxygen-alloyed poly-Si (poly-SiOx) as suitable material for passivating contacts. From passivation point of view, poly-SiOx layers show excellent passivation quality and carrier selectivity for both n-type (iVOC,flat = 740 mV, contact resistance ρc = 0.7 mΩ/cm2, iVOC,textured = 723 mV) and p-type (iVOC,flat = 709 mV, ρc = 0.5 mΩ/cm2). Optically, due to the incorporation of oxygen, the absorption coefficient of poly-SiOx becomes much lower than that of doped poly-Si at long wavelength. Both n-type and p-type poly-SiOx layers are concurrently deployed in front/back-contacted (FBC) solar cells with a front indium tin oxide (ITO) layer to facilitate the lateral transport of carriers and minimize cell's reflection. A high cell FF of 83.5% obtained in double-side flat FBC solar cell indicates an efficient carrier collection by these passivating contacts. An active-area cell efficiency of 21.0% featuring JSC,EQE = 39.7 mA/cm2 is obtained in front-side textured poly-SiOx FBC cell, with the potential of further improvement in both VOC and FF. The optical advantage of poly-SiOx over poly-Si as passivating contact is also observed with a 19.7% interdigitated back-contacted (IBC) solar cell endowed with poly-SiOx emitter and back surface field. Compared to the reference 23.0% IBC solar cell with poly-Si passivating contacts, the one based on poly-SiOx passivating contacts shows higher IQE at wavelengths above 1100 nm. This indicates that for both FBC and IBC cells, poly-SiOx passivating contacts hold potential in enhancing the cell JSC by maximizing the cell spectral response.

Machine learning is arising as a major solution for the photovoltaic (PV) power prediction. Despite the abundant literature, the effect of climate on yield predictions using machine learning is unknown. This work aims to find climatic trends by predicting the power of 48 PV systems around the world, equally divided into four climates. An extensive data gathering process is performed and open-data sources are prioritized. A website www.tudelft.nl/open-source-pv-power-databases has been created with all found open data sources for future research. Five machine learning algorithms and a baseline one have been trained for each PV system. Results show that the performance ranking of the algorithms is independent of climate. Systems in dry climates depict on average the lowest Normalized Root Mean Squared Error (NRMSE) of 47.6 %, while those in tropical present the highest of 60.2 %. In mild and continental climates the NRMSE is 51.6 % and 54.5 %, respectively. When using a model trained in one climate to predict the power of a system located in another climate, on average systems located in cold climates show a lower generalization error, with an additional NRMSE as low as 5.6 % depending on the climate of the test set. Robustness evaluations were also conducted that increase the validity of the results.

Since single junction c-Si solar cells are reaching their practical efficiency limit. Perovskite/c-Si tandem solar cells hold the promise of achieving greater than 30% efficiencies. In this regard, optical simulations can deliver guidelines for reducing the parasitic absorption losses and increasing the photocurrent density of the tandem solar cells. In this work, an optical study of 2, 3 and 4 terminal perovskite/c-Si tandem solar cells with c-Si solar bottom cells passivated by high thermal-budget poly-Si, poly-SiOx and poly-SiCx is performed to evaluate their optical performance with respect to the conventional tandem solar cells employing silicon heterojunction bottom cells. The parasitic absorption in these carrier selective passivating contacts has been quantified. It is shown that they enable greater than 20 mA/cm2 matched implied photocurrent density in un-encapsulated 2T tandem architecture along with being compatible with high temperature production processes. For studying the performance of such tandem devices in real-world irradiance conditions and for different locations of the world, the effect of solar spectrum and angle of incidence on their optical performance is studied. Passing from mono-facial to bi-facial tandem solar cells, the photocurrent density in the bottom cell can be increased, requiring again optical optimization. Here, we analyse the effect of albedo, perovskite thickness and band gap as well as geographical location on the optical performance of these bi-facial perovskite/c-Si tandem solar cells. Our optical study shows that bi-facial 2T tandems, that also convert light incident from the rear, require radically thicker perovskite layers to match the additional current from the c-Si bottom cell. For typical perovskite bandgap and albedo values, even doubling the perovskite thickness is not sufficient. In this respect, lower bandgap perovskites are very interesting for application not only in bi-facial 2T tandems but also in related 3T and 4T tandems.

At present, electrification and digitalization are two significant trends in the energy sector. Large-scale introduction of variable renewable energy sources, energy storage and power-electronics components, all based on direct current (DC), is fundamentally changing the electrical energy system of today that is based on alternating current (AC). This trend leads to a complex hybrid AC/DC power system with the extensive deployment of information and communication technologies (ICT) to keep the system stable and reliable. Photovoltaics (PV) is a technology that will play an essential role in local generation of clean electricity in expanding urban areas. To take full advantage of PV in the urban environment, PV technology must become intelligent. In this article, we identify, describe, and label a new research field that deals with intelligent PV and its application in components with multiple functionalities. We denote this field photovoltatronics. We review photovoltatronics research areas and introduce new directions for each area. Photovoltatronics brings together disciplines of energy and informatics. Since photons and electrons are carriers of both energy and information, photovoltatronics is the field that designs and delivers autonomous devices for electricity generation and information communication. It introduces a pathway from harvesting energy of photons (hν) to creating bits of information (01) through the energy of photo-generated electrons (eV). We show that ∼10 keV energy is at least needed for transceiving one bit of information in the energy-information chain of the photovoltatronics, while the ultimate efficiency of the chain can reach up to 33.4%. We show that the number of publications related to photovoltatronics is exponentially increasing and the publication rate of combined research areas has been doubled in the present decade and reached 3.4% as a clear sign of its emergence.

In high-efficiency silicon solar cells featuring carrier-selective passivating contacts based on ultrathin SiOx/poly-Si, the appropriate implementation of transparent conductive oxide (TCO) layers is of vital importance. Considerable deterioration in passivation quality occurs for thin poly-Si-based devices owing to the sputtering damage during TCO deposition. Curing treatment at temperatures above 350 °C can recover such degradation, whereas the opto-electrical properties of the TCO are affected as well, and the carrier transport at the poly-Si/TCO contact is widely reported to degrade severely in such a procedure. Here, we propose straightforward approaches, post-deposition annealing at 400 °C in nitrogen, hydrogen, or air ambience, are proposed to tailor material properties of high-mobility hydrogenated fluorine-doped indium oxide (IFO:H) film. Structural, morphological, and opto-electrical properties of the IFO:H films are investigated as well as their inherent electron scattering and doping mechanisms. Hydrogen annealing treatment proves to be the most promising strategy. The resulting layer exhibits both optimal opto-electrical properties (carrier density = 1.5 × 1020 cm-3, electron mobility = 108 cm2 V-1 s-1, and resistivity = 3.9 × 10-4 ω cm) and remarkably low contact resistivities (∼20 mω cm2 for both n- and p-contacts) in poly-Si solar cells. Even though the presented cells are limited by the metallization step, the obtained IFO:H-base solar cell show an efficiency improvement from 20.1 to 20.6% after specific hydrogen treatment, demonstrating the potential of material manipulation and contact engineering strategy in high-efficiency photovoltaic devices endowed with TCOs.

An interdigitated back-contacted (IBC) configuration is proposed for submicron copper indium gallium (di)selenide (CIGS). In a modelling platform, the structure was opto-electrically optimized for maximum efficiency. The results are compared with a reference front/back-contacted (FBC) solar cell with similar absorber thickness and exhibiting 11.9% efficiency. The electrical passivation at the front side is accomplished by an Al2O3 layer, which is endowed with negative fixed charges. The results indicate that with an optimal geometry and engineered bandgap grading, the efficiency of the new IBC structure can reach 17%. Additionally, with a reasonably low defect density in the absorber layer, efficiencies as high as 19.7% and open-circuit voltage comparable with that of the record solar cell are possible with the IBC structure.

Organic-inorganic metal halide perovskites have attracted a considerable interest in the photovoltaic scientific community demonstrating a rapid and unprecedented increase in conversion efficiency in the last decade. Besides the stunning progress in performance, the understanding of the physical mechanisms and limitations that govern perovskite solar cells are far to be completely unravelled. In this work, we study the origin of their hysteretic behaviour from the standpoint of fundamental semiconductor physics by means of technology computer aided design electrical simulations. Our findings identify that the density of shallow interface defects at the interfaces between perovskite and transport layers plays a key role in hysteresis phenomena. Then, by comparing the defect distributions in both spatial and energetic domains for different bias conditions and using fundamental semiconductor equations, we can identify the driving force of hysteresis in terms of slow recombination processes and charge distributions.

Excellent surface passivation induced by (i)a-Si:H is critical to achieve high-efficiency silicon heterojunction (SHJ) solar cells. This is key for conventional single-junction cell applications but also for bottom cell application in tandem devices. In this study, we investigated the effects of (i)a-Si:H deposition temperature on passivation quality and SHJ solar cell performance. At the lower end of temperatures ranging from 140°C to 200°C, it was observed with Fourier-transform infrared spectroscopy (FTIR) that (i)a-Si:H films are less dense, thus hindering their surface passivation capabilities. However, with additional hydrogen plasma treatments (HPTs), those (i)a-Si:H layers deposited at lower temperatures exhibited significant improvements and better passivation qualities than their counterparts deposited at higher temperatures. On the other hand, even though we observed the highest VOCs for cells with (i)a-Si:H deposited at the lowest temperature (140°C), the related FFs are poorer as compared to their higher temperature counterparts. The optimum trade-off between VOC and FF for the SHJ cells was found with temperatures ranging from 160°C to 180°C, which delivered independently certified efficiencies of 23.71%. With a further improved p-layer that enables a FF of 83.3%, an efficiency of 24.18% was achieved. Thus, our study reveals two critical requirements for optimizing the (i)a-Si:H layers in high-efficiency SHJ solar cells: (i) excellent surface passivation quality to reduce losses induced by interface recombination and simultaneously (ii) less-defective (i)a-Si:H bulk to not disrupt the charge carrier collections.

The integration of photovoltaic (PV) technology in urban environments poses new challenges for the design of PV modules. In particular, the poor shading tolerance of conventional PV modules strongly limits the energy performance of urban PV systems. In this work, we analyze how interdigitated back-contact solar cells with low-breakdown voltages can help improve the shading tolerance of PV modules. Through detailed simulations, we show that the breakdown voltage can be tuned without significantly degrading the efficiency of the solar cell. Simulation results indicate that, under partial shading conditions, cells with a 0.3-V breakdown voltage could boost by 20% the annual yield of conventional crystalline silicon PV modules with three bypass diodes. These findings are supported by a four-month-long monitoring campaign of PV modules with different breakdown characteristics, which shows a specific yield gain of about 4% in PV modules with six bypass diodes.

The share of solar energy in the electricity mix increases year after year. Knowing the production of photovoltaic (PV) power at each instant of time is crucial for its integration into the grid. However, due to meteorological phenomena, PV power output can be uncertain and continuously varying, which complicates yield prediction. In recent years, machine learning (ML) techniques have entered the world of PV power forecasting to help increase the accuracy of predictions. Researchers have seen great potential in this approach, creating a vast literature on the topic. This paper intends to identify the most popular approaches and the gaps in this discipline. To do so, a representative part of the literature consisting of 100 publications is classified based on different aspects such as ML family, location of PV systems, number of systems considered, features, etc. Via this classification, the main trends and gaps can be highlighted while offering advice to researchers interested in the topic.

Reducing indium consumption, which is related to the transparent conductive oxide (TCO) use, is a key challenge for scaling up silicon heterojunction (SHJ) solar cell technology to terawatt level. In this work, we developed bifacial SHJ solar cells with reduced TCO thickness. We present three types of In2O3-based TCOs, tin-, fluorine-, and tungsten-doped In2O3 (ITO, IFO, and IWO), whose thickness has been optimally minimized. These are promising TCOs, respectively, from post-transition metal doping, anionic doping, and transition metal doping and exhibit different opto-electrical properties. We performed optical simulations and electrical investigations with varied TCO thicknesses. The results indicate that (i) reducing TCO thickness could yield larger current in both monofacial and bifacial SHJ devices; (ii) our IWO and IFO are favorable for n-contact and p-contact, respectively; and (iii) our ITO could serve well for both n-contact and p-contact. Interestingly, for the p-contact, with the ITO thickness reducing from 75 nm to 25 nm, the average contact resistivity values show a decreasing trend from 390 mΩ cm2 to 114 mΩ cm2. With applying 25-nm-thick front IWO in n-contact, and 25-nm-thick rear ITO use in p-contact, we obtained front side efficiencies above 22% in bifacial SHJ solar cells. This represents a 67% TCO reduction with respect to a reference bifacial solar cell with 75-nm-thick TCO on both sides.

Thin films of transition metal oxides such as molybdenum oxide (MoOx) are attractive for application in silicon heterojunction solar cells for their potential to yield large short-circuit current density. However, full control of electrical properties of thin MoOx layers must be mastered to obtain an efficient hole collector. Here, we show that the key to control the MoOx layer quality is the interface between the MoOx and the hydrogenated intrinsic amorphous silicon passivation layer underneath. By means of ab initio modelling, we demonstrate a dipole at such interface and study its minimization in terms of work function variation to enable high performance hole transport. We apply this knowledge to experimentally tailor the oxygen content in MoOx by plasma treatments (PTs). PTs act as a barrier to oxygen diffusion/reaction and result in optimal electrical properties of the MoOx hole collector. With this approach, we can thin down the MoOx thickness to 1.7 nm and demonstrate short-circuit current density well above 40 mA/cm2 and a champion device exhibiting 23.83% conversion efficiency.

Monitoring residential scale photovoltaic (PV) systems is important for maximizing the energy yield and detecting malfunctions. Analytical-based approaches are not reliable in these systems because of the lack of on-site measurements and detailed PV system specifications. In this paper, a collaborative approach is proposed which does not depend on weather data but on similar PV systems. Based on the so-called performance-to-peer approach, the aim of this work is to improve this baseline model by adding PV systems characteristics and by optimizing with machine learning techniques. The methodology has been tested in a fleet of more than 12,000 PV systems located in the Netherlands with up to 7 years of data per system. The proposed model achieves an average (Formula presented.) of 94.1% and a NRMSE of 0.05, outperforming in terms of (Formula presented.) the baseline model by 1.4 points, and the analytical approach by 3.8. The data requirements of this model are not high: With 1,700 years of PV system data with daily resolution, the maximum performance can be achieved as long as a minimum of 6 months of data per system and 100 PV systems are considered. The application of this model for fault detection and categorization has also been shown. The proposed approach has shown its strengths with respect to other methods through its ability of distinguishing between system mismatch and actual fault and of adapting to new situations via retraining.

We compared the morphology and Raman response of nanoscale shaped surfaces of Si substrates versus monocrystalline Si. Samples were structured by reactive ion etching, and four of them were covered by a RuO2-IrO2 layer. Raman bands, centred at approx. 520 cm–1, belonging to samples processed by etching the Si surface have intensities higher by approximately one order of magnitude than those of reference non-etched samples. For nanostructured samples, the rise in the Raman signal was 12–14 ×, which is in agreement with the model of the electric field at the tips of Si due to their geometry. This phenomenon is related to the high absorption of excitation radiation. Nanostructured surfaces of samples containing a layer of RuO2-IrO2 give rise to the phenomenon of surface enhancement of the Raman response most likely due to the charge transfer at the interface between silicon and conductive oxides. The nanostructured surface of Si without a metal layer behaves as a SERS substrate and detects the analytes at a low concentration.

After developing the methodology, we applied it to the case of the Netherlands highways. We show that the average irradiation on the Dutch highway network is around 880 kWh/m2/y, 35% less than the potential of an optimally tilted conventional PV system in the south of the Netherlands. Covering the entire 1600 km of the Dutch highways network with solar road modules of poly c-Si, mono c-Si and CIGS would respectively generate 5.2 TWh/y, 6.6 TWh/y, and 3.4 TWh/y of DC electricity. This could be used to fully power the Dutch national public lighting demand. Moreover, to include the effect of traffic on these values, a model was developed to account for the energy potential reduction due to vehicles shading. Using real traffic data from two of the top-four busiest roads in the Netherlands, the A12 and A16, it was found that traffic accounts for an average of 3% reduction of solar road irradiation and DC yield potential. The maximum reduction of 9% was observed in particular locations, such as bridges and nearby ramp roads. The result of such mapping methodology could serve as a useful tool for research advisory, private industry, and governmental projects.

Bifacial (BF) copper-plated crystalline silicon solar cell is an attractive topic to concurrently reduce silver consumption and maintain good device performance. However, it is still challenging to realize a high aspect ratio (AR) of the metal fingers. Herein, a new type of hybrid-shaped Cu finger is electromagnetically fabricated in a BF plating process. Cyclic voltammetry is employed to disclose the electrochemical behaviors of cupric ions in monofacial and simultaneous BF Cu-plating processes, such that the controllability of the plating process could be assessed. The optimal hybrid Cu finger is composed of a rectangular bottom part and a round top part, such that an utmost effective AR value of 1.73 is reached. In BF Cu-plating, two sub-three-electrode electrochemical cells are employed to realize equal metal finger heights on both sides of the wafer. Compared to our low thermal-budget screen-printing metallization, the Cu-plated silicon heterojunction devices show both optical and electrical advantages (based on lab-scale tests). The champion BF Cu-plated device shows a front-side efficiency of 22.1% and a bifaciality factor of 0.99.

The edge recombination losses of crystalline silicon solar cells become significant when they are cut into smaller pieces to be assembled into modules. With the interdigitated pattern of doped p and n regions on the rear side, the interdigitated back contact (IBC) solar cells can be cut through different doped regions. In this study, the cutting losses in IBC solar cells are investigated and various cutting scenarios are studied. Through simulations and experimental measurements, it is found that the cut losses can be reduced by cutting through the back surface field rather than through the emitter. The losses under low light intensity are reduced to an even greater extent. When a 23% cell is cut into 1/3 pieces, the efficiency can be increased by 1.2%rel (cut related losses were improved from 2.0rel to 0.8%rel under standard 1-sun testing conditions, compared to cutting through the emitter. Under low light intensity of 0.25 sun, the improvement is around 2.4%rel. The improvement is mainly due to lower FF losses in the I-V characteristics, and this is further confirmed by Suns-Voc and PL measurements. In the pFF analysis, the additional losses due to laser damage are also observed. This strategy of cutting through the BSF region in IBC solar cells can be quickly adopted in mass production without the need for additional processes or equipment and both module power and energy yield can be increased.

We investigate gentle front side textures for perovskite/silicon tandem solar cells. These textures enhance the absorption of sunlight, yet are sufficiently gentle to allow deposition of an efficient perovskite top cell. We present a tandem solar cell with such gentle texture, fabricated by Kaneka corporation, with an efficiency as high as 28.6%. We perform an extensive ray-optics study, exploring non-conformal textures at the front and rear side of the perovskite layer. Our results reveal that a gentle texture with steepness of only 23° can be more optically efficient than conventional textures with more than double that steepness. We also show that the observed anti-reflective effect of such gentle textures is not based a double bounce, but on light trapping by total internal reflection. As a result, the optical effects of the encapsulation layers play an important role, and have to be accounted for when evaluating the texture design for perovskite/silicon tandems.

We formed phosphorous(P)-ion-implanted n-BaSi2 films on p-Si(111) substrates and demonstrated solar-cell functionality of the n-BaSi2/p-Si heterojunction under AM1.5 illumination. The BaSi2 films were grown by molecular beam epitaxy, followed by implantation of P ions to the BaSi2 films using PF3 gas at an energy of 10 keV and a dose of 1 × 1014 cm−2. Subsequent postannealing was conducted at 500°C in Ar for different durations (t = 30–480 s) to activate the P atoms. The diffusion coefficient for P atoms in BaSi2 was evaluated from the depth profiles of P atoms by secondary-ion mass spectrometry. The activation energies of lattice and grain boundary diffusion were found to be 1.1 ± 0.6 and 2.5 ± 0.6 eV, respectively. From the analysis of Raman and photoluminescence spectra, the ion implantation damage was recovered by the postannealing. For one treated sample with t = 120 s, the internal quantum efficiency reached 67% at a wavelength of 870 nm. This is the highest ever achieved for n-BaSi2/p-Si heterojunction solar cells. Ion implantation is thus applicable to BaSi2 films grown by any other method. This achievement thereby opens a new route for the formation of BaSi2 solar cells.

Even though interdigitated back contact (IBC) architecture produces the most efficient solar cells, it is difficult to make them cost-effective and industrially viable. Therefore, single-sided atmospheric pressure chemical vapor deposition (APCVD) is investigated for the fabrication of IBC solar cells because it reduces the overall thermal budget, simplifies wet bench processing, and requires no additional masking layer. For the fabrication of a full APCVD IBC solar cell, a very lightly doped front surface field (FSF) of 650 Ω/sq, a heavier doped back surface field (BSF) of 100 Ω/sq and a moderately doped emitter of 250 Ω/sq was used. The high-temperature annealing step is partially done in an oxygen (O2) environment to (i) drive in dopants, (ii) prevent the formation of a boron-rich layer in case of p+ doped c-Si, and (iii) grow an in-situ SiO2 at the Si/dopant glass interface. The etch rate difference between the in-situ grown SiO2 and the doped glass layer is utilized to etch the doped glass completely. The retained in-situ SiO2 after etching is capped with plasma-enhanced chemical vapor deposited (PECVD) SiNx for the passivation of both polarities of IBC solar cells. A full APCVD IBC solar cell precursors (i.e. before metallization) obtained implied open-circuit voltage (iVoc) of 714 mV and emitter saturation current density (J0s) of 17 fA/cm2. At the device level, a full APCVD IBC solar cell achieved a conversion efficiency of 22.8% with Voc of 696 mV and short-circuit current density JSC of 41.3 mA/cm2. These parameters are comparable to the commercially available full-tube diffused ZEBRA® IBC solar cells.

Thin layers of MoOx have been deposited by thermal evaporation followed by post-deposition annealing. The density of states distributions of the MoOx films were extracted deconvoluting the absorption spectra, measured by a photothermal deflection spectroscopy setup, including the small polaron contribution. Results revealed a sub-band defect distribution centered 1.1 eV below the conduction band; the amplitude of this distribution was found to increase with post-deposition annealing temperature and film thickness.

Hydrogenated nanocrystalline silicon oxide (nc-SiOx:H) layers exhibit promising optoelectrical properties for carrier-selective-contacts in silicon heterojunction (SHJ) solar cells. However, achieving high conductivity while preserving crystalline silicon (c-Si) passivation quality is technologically challenging for growing thin layers (less than 20 nm) on the intrinsic hydrogenated amorphous silicon ((i)a-Si:H) layer. Here, we present an evaluation of different strategies to improve optoelectrical parameters of SHJ contact stacks founded on highly transparent nc-SiOx:H layers. Using plasma-enhanced chemical vapor deposition, we firstly investigate the evolution of optoelectrical parameters by varying the main deposition conditions to achieve layers with refractive index below 2.2 and dark conductivity above 1.00 S/cm. Afterwards, we assess the electrical properties with the application of different surface treatments before and after doped layer deposition. Noticeably, we drastically improve the dark conductivity from 0.79 to 2.03 S/cm and 0.02 to 0.07 S/cm for n- and p-contact, respectively. We observe that interface treatments after (i)a-Si:H deposition not only induce prompt nucleation of nanocrystals but also improve c-Si passivation quality. Accordingly, we demonstrate fill factor improvement of 13.5%abs from 65.6% to 79.1% in front/back-contacted solar cells. We achieve conversion efficiency of 21.8% and 22.0% for front and rear junction configurations, respectively. The optical effectiveness of contact stacks based on nc-SiOx:H is demonstrated by averagely 1.5 mA/cm2 higher short-circuit current density thus nearly 1%abs higher cell efficiency as compared with the (n)a-Si:H.

N-type microcrystalline silicon carbide (μc-SiC:H(n)) is a wide bandgap material that is very promising for the use on the front side of crystalline silicon (c-Si) solar cells. It offers a high optical transparency and a suitable refractive index that reduces parasitic absorption and reflection losses, respectively. In this work, we investigate the potential of hot wire chemical vapor deposition (HWCVD)–grown μc-SiC:H(n) for c-Si solar cells with interdigitated back contacts (IBC). We demonstrate outstanding passivation quality of μc-SiC:H(n) on tunnel oxide (SiO2)–passivated c-Si with an implied open-circuit voltage of 742 mV and a saturation current density of 3.6 fA/cm2. This excellent passivation quality is achieved directly after the HWCVD deposition of μc-SiC:H(n) at 250°C heater temperature without any further treatments like recrystallization or hydrogenation. Additionally, we developed magnesium fluoride (MgF2)/silicon nitride (SiNx:H)/silicon carbide antireflection coatings that reduce optical losses on the front side to only 0.47 mA/cm2 with MgF2/SiNx:H/μc-SiC:H(n) and 0.62 mA/cm2 with MgF2/μc-SiC:H(n). Finally, calculations with Sentaurus TCAD simulation using MgF2/μc-SiC:H(n)/SiO2/c-Si as front side layer stack in an IBC solar cell reveal a short-circuit current density of 42.2 mA/cm2, an open-circuit voltage of 738 mV, a fill factor of 85.2% and a maximum power conversion efficiency of 26.6%.

Power generation from photovoltaic (PV) modules suffers from heat losses that are a function of the temperature coefficient of maximum power ( γ ) of the PV module. Another loss mechanism is shading, where the power output of the module and ultimately the system can be severely compromised. Various approaches such as passive, active, or smart bypasses and module level power electronics have been employed to minimize the effects of shading on a PV module. So far, the performance of a PV module under shading had only been addressed vaguely and was generally described qualitatively. Therefore, a probability-based parameter called shading tolerability (ST) was recently developed to quantify the behavior of PV modules under all kinds of shade. However, the observations pertaining to ST were only carried out at 25 °C ambient temperature. Hence, this paper aims to: 1) investigate whether ST is an innate property of a PV module by formulating a correlation between ST and ambient temperature, 2) classify various PV technologies based on ST and γ, and 3) develop a PV module selection map. Theoretical result shows that thermal features of a PV module (nominal operational cell temperature and γ) can influence the PV module ST by 12.25%. Also, an analytical limit is derived for ST variation with respect to ambient temperature change $(\Delta \text{ST}/ \Delta T_{a})$ . The proposed selection map, which is similar to the Ragone plot for energy-storing devices, is validated using the data of 27 PV systems installed in the Netherlands. The map can be used for optimal selection of PV modules for the design of PV systems simply by knowing the specifications of the module along with the meteorological conditions of the installation location.

The high usage of silver in industrial solar cells may limit the growth of the solar industry. One solution is to replace Ag with copper. A screen printable Cu paste is used herein to metallize industrial interdigitated back contact (IBC) solar cells. A novel metallization structure is proposed for making solar cells. Cu paste is applied to replace the majority of the Ag used in IBC cells as busbars and fingers. Cu paste is evaluated for use as fingers, and solar cells are made to test conversion efficiency and reliability. The Cu paste achieves comparably low resistivity, and Cu paste printed cells demonstrate similar efficiency to Ag paste printed cells, with an average efficiency of 23%, and only 4.5 mg W−1 of Ag usage. Also, the solar cells are stable and no Cu in-diffusion is observed under damp heat (85 °C, 85% relative humidity) and thermal stress (200 °C) for 1000 h, respectively. All processes used in this study can be carried out with industrial equipment. These findings reveal a new application for Cu pastes and point to a new direction for reducing Ag utilization and cost.

Urban areas rely on the wide implementation of X-Integrated Photovoltaic (X-IPV) systems to provide green electricity for the sustainable electrification. In this research, a modelling framework to accurately predicting their output energy yield and asses their impact on the low voltage distribution grid has been developed. This tool can compute a densely populated urban area at a pace of 2.5 seconds per building. In this contribution, we present the results of a pilot project executed in a Dutch neighborhood of 4873 separate roof owners located in the city of Amsterdam, the Netherlands.

The use of transition metal oxides for the selective carrier contact in the crystalline silicon solar cells technology is rising to interest for the excellent optoelectrical properties of these materials whose implementation, however, can result in lousy performing cells due to an S-shaped electrical characteristic. In this paper, we fabricated solar cells showing S-shaped J-V curve and carried out an analysis of the reasons of such behavior using a model involving the series of a standard cell equivalent circuit with a Schottky junction in order to explain these atypical performances. A good matching between the experimental measurements and the adopted theoretical model was obtained. The extracted parameters are listed and analyzed to shade light on the reasons behind the low-performance cells.

The application of molybdenum oxide in the photovoltaic field is gaining traction as this material can be deployed in doping-free heterojunction solar cells in the role of hole selective contact. For modeling-based optimization of such contact, knowledge of the molybdenum oxide defect density of states (DOS) is crucial. In this paper, we report a method to extract the defect density through nondestructive optical measures, including the contribution given by small polaron optical transitions. The presence of defects related to oxygen-vacancy and of polaron is supported by the results of our opto-electrical characterizations along with the evaluation of previous observations. As part of the study, molybdenum oxide samples have been evaluated after post-deposition thermal treatments. Quantitative results are in agreement with the result of density functional theory showing the presence of a defect band fixed at 1.1 eV below the conduction band edge of the oxide. Moreover, the distribution of defects is affected by post-deposition treatment.