1. Huang-Pair: A New High Voltage Diode Concept and Its Demonstration.
- Author
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Li, Yuan and Huang, Alex Q.
- Subjects
- *
STRAY currents , *SILICON carbide , *ELECTRIC potential , *DIODES , *SCHOTTKY barrier diodes , *FIELD-effect transistors - Abstract
The Huang-Pair is a novel hybrid diode concept based on the integration of a low forward voltage drop, low voltage rating diode with a high voltage majority carrier switch, such as a silicon carbide (SiC) Junction gate field-effect transistor (JFET). A 1200 V Huang-Pair is developed to demonstrate the concept in which a low voltage Si diode is paired with a 1200 V SiC JEFT, resulting in a low-forward voltage, low reverse recovery high voltage diode. The Huang-Pair is a two terminal device and its performance tradeoff between forward voltage drop, leakage current, and reverse recovery can be conducted between two discrete devices, which is more flexible. The Huang-Pair concept can also be realized by SiC MOSFET and gallium nitride MOSFET, and it can be applied to different voltage classes. [ABSTRACT FROM AUTHOR]
- Published
- 2021
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