Search

The generation and manipulation of the valley polarization in solids are crucial for valleytronics, which is mainly limited to the analysis of inversion and time-reversal symmetries for two-dimensional (2D) hexagonal systems. Here, through group theory analysis, we propose general rules for the generation and manipulation of valley polarization in 2D hexagonal lattices. The generation of valley polarization requires breaking the specific enforced symmetry that is associated with different valleys or reverses the sign of Berry curvature. Further manipulation of valley polarization requires asymmetry operators connecting two states with opposite signs of Berry curvature. These rules for generating and manipulating valley polarization are extendable to generic points in momentum space. Combined with first-principles calculations, we realize the controllable valley polarization in three representative systems, i.e., monolayer FeCl2, bilayer TcGeSe3, and monolayer CrOBr. Our work provides symmetry rules for designing valleytronic materials that could facilitate the experimental detection and realistic applications., Comment: 16 pages, 4 figures

Phonons have provided an ideal platform for a variety of intriguing physical states, such as non-Abelian braiding and the Haldane model. It is promising that phonons will realize the complicated nodal states accompanying unusual quantum phenomena. Here, we propose the hybrid nodal surface and nodal line (NS+NL) phonons beyond the single-genre nodal phonons. We categorize the NS+NL phonons into two- and four-band situations based on symmetry analysis and compatibility relationships. Combining database screening with first-principles calculations, we identify the ideal candidate materials for realizing all categorized NS+NL phonons. Our calculations and tight-binding models further demonstrate that the interplay between NS and NL induces unique phenomena. In space group (SG) 113, the quadratic NL acts as a hub of the Berry curvature between two NSs, generating ribbonlike surface states (SSs). In SG 128, the NS serves as the counterpart of the Weyl NL, in which NS-NL mixed topological SSs are observed. Our findings extend the scope of hybrid nodal states and enrich the phononic states in realistic materials., Comment: 27+35 pages, 5+44 figures, 1+3 tables

The interfacial structures and interactions of two-dimensional (2D) materials on solid substrates are of fundamental importance for the fabrication and application of 2D materials. However, selection of a suitable solid substrate to grow 2D material, determination and control of the 2D material-substrate interface remain a big challenge due to the large diversity of possible configurations. Here, we propose a computational framework to select an appropriate substrate for epitaxial growth of 2D material and to predict possible 2D material-substrate interface structures and orientations using density functional theory calculations performed for all non-equivalent atomic structures satisfying the symmetry constraints. The approach was validated by the correct prediction of three experimentally reported 2D material-substrate interface systems with only the given information of two parent materials. Several possible interface configurations are also proposed based on this approach. We therefore construct a database that contains these interface systems and has been continuously expanding. This database serves as preliminary guidance for epitaxial growth and stabilization of new materials in experiments.

Being atomically thin and amenable to external controls, two-dimensional (2D) materials offer a new paradigm for the realization of patterned qubit fabrication and operation at room temperature for quantum information sciences applications. Here we show that the antisite defect in 2D transition metal dichalcogenides (TMDs) can provide a controllable solid-state spin qubit system. Using high-throughput atomistic simulations, we identify several neutral antisite defects in TMDs that lie deep in the bulk band gap and host a paramagnetic triplet ground state. Our in-depth analysis reveals the presence of optical transitions and triplet-singlet intersystem crossing processes for fingerprinting these defect qubits. As an illustrative example, we discuss the initialization and readout principles of an antisite qubit in WS2, which is expected to be stable against interlayer interactions in a multilayer structure for qubit isolation and protection in future qubit-based devices. Our study opens a new pathway for creating scalable, room-temperature spin qubits in 2D TMDs.

Discovery and design of two-dimensional (2D) materials with suitable band gaps and high carrier mobility is of vital importance for photonics, optoelectronics, and high-speed electronics. In this work, based on first principles calculations using density functional theory (DFT) with PBE and HSE functionals, we introduce a family of monolayer isostructural semiconducting tellurides M2N2Te8, with M = {Ti, Zr, Hf} and N= {Si, Ge}. These compounds have been identified to possess direct band gaps from 1.0 eV to 1.31 eV, which are well suited for photonics and optoelectronics applications. Additionally, anisotropic in-plane transport behavior is observed and small electron and hole (0.11 - 0.15 me) effective masses are identified along the dominant transport direction. Ultra-high carrier mobility is predicted for this family of 2D compounds which host great promise for potential applications in high-speed electronic devices. Detailed analysis of electronic structures reveals the origins of the promising properties of this unique class of 2D telluride materials., Comment: 15 pages, 3 figures

We propose a novel class of two-dimensional (2D) Dirac materials in the MX family (M=Be, Mg, Zn and Cd, X = Cl, Br and I), which exhibit graphene-like band structures with linearly-dispersing Dirac-cone states over large energy scales (0.8~1.8 eV) and ultra-high Fermi velocities comparable to graphene. The electronic and topological properties are found to be highly tunable and amenable to effective modulation via anion-layer substitution and vertical electric field. The electronic structures of several members of the family are shown to host a Van-Hove singularity (VHS) close to the energy of the Dirac node. The enhanced density-of-states associated with these VHSs could provide a mechanism for inducing topological superconductivity. The presence of sizable band gaps, ultra-high carrier mobilities, and small effective masses makes the MX family promising for electronics and spintronics applications.

Recent years have witnessed tremendous success in the discovery of topological states of matter. Particularly, sophisticated theoretical methods in time-reversal-invariant topological phases have been developed, leading to the comprehensive search of crystal database and the prediction of thousands of new topological materials. In contrast, the discovery of magnetic topological phases that break time reversal is still limited to several exemplary materials because the coexistence of magnetism and topological electronic band structure is rare in a single compound. To overcome this challenge, we propose an alternative approach to realize the quantum anomalous Hall (QAH) effect, a typical example of magnetic topological phase, via engineering two-dimensional (2D) magnetic van der Waals heterojunctions. Instead of a single magnetic topological material, we search for the combinations of two 2D (typically trivial) magnetic insulator compounds with specific band alignment so that they can together form a type-III heterojunction with topologically non-trivial band structure. By combining the data-driven materials search, first principles calculations, and the symmetry-based analytical models, we identify 8 type-III heterojunctions consisting of 2D ferromagnetic insulator materials from a family of 2D monolayer MXY compounds (M = metal atoms, X = S, Se, Te, Y = F, Cl, Br, I) as a set of candidates for the QAH effect. In particular, we directly calculate the topological invariant (Chern number) and chiral edge states in the MnNF/MnNCl heterojunction with ferromagnetic stacking. This work illustrates how data-driven material science can be combined with symmetry-based physical principles to guide the search for novel heterojunction-based quantum materials hosting the QAH effect and other exotic quantum states in general.

Exciting advances have been made in artificial intelligence (AI) during the past decades. Among them, applications of machine learning (ML) and deep learning techniques brought human-competitive performances in various tasks of fields, including image recognition, speech recognition and natural language understanding. Even in Go, the ancient game of profound complexity, the AI player already beat human world champions convincingly with and without learning from human. In this work, we show that our unsupervised machines (Atom2Vec) can learn the basic properties of atoms by themselves from the extensive database of known compounds and materials. These learned properties are represented in terms of high dimensional vectors, and clustering of atoms in vector space classifies them into meaningful groups in consistent with human knowledge. We use the atom vectors as basic input units for neural networks and other ML models designed and trained to predict materials properties, which demonstrate significant accuracy., Comment: 8 pages, 4 figures

Triply degenerate points (TDPs) in band structure of a crystal can generate novel TDP fermions without high-energy counterparts. Although identifying ideal TDP semimetals, which host clean TDP fermions around the Fermi level ($E_F$) without coexisting of other quasiparticles, is critical to explore the intrinsic properties of this new fermion, it is still a big challenge and has not been achieved up to now. Here, we disclose an effective approach to search for ideal TDP semimetals via selective band crossing between antibonding $s$ and bonding $p$ orbitals along a line in the momentum space with $C_{3v}$ symmetry. Applying this approach, we have successfully identified the NaCu$_3$Te$_2$ family of compounds to be ideal TDP semimetals, where two and only two pairs of TDPs are located around the $E_F$. Moreover, we reveal an interesting mechanism to modulate energy splitting between a pair of TDPs, and illustrate the intrinsic features of TDP Fermi arcs in these ideal TDP semimetals., Comment: 9 pages, 4 figures